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1. 发明申请

US20090053021A1 Semiconductor manufacturing apparatus 审中-公开
标题翻译：半导体制造装置
公开(公告)号：US20090053021A1
公开(公告)日：2009-02-26
申请号：US11887111
申请日：2006-03-28
申请人： Norichika Yamagishi , Sadao Hisakado
发明人： Norichika Yamagishi , Sadao Hisakado
IPC分类号： H01L21/677
CPC分类号： H01L21/67309 , H01L21/67259 , H01L21/681
摘要： A semiconductor manufacturing apparatus comprises a substrate transfer device for transferring a substrate, a substrate detector unit including a light emitter unit for emitting light onto the substrate and a light receiver unit for receiving the light to detect the substrate transferred by the substrate transfer device, and a controller for receiving data on the received light quantity from the light receiver unit. Multiple mutually non-overlapping light quantity ranges are pre-registered in the controller, and when light emitted from the light emitter unit reaches the light receiver unit by way of the substrate, the controller identifies which of the pre-registered light quantity ranges is the received light quantity, and outputs a command according to the identified light quantity range.
摘要翻译：一种半导体制造装置，包括用于转印衬底的衬底转移装置，包括用于将光发射到衬底上的光发射器单元的衬底检测器单元和用于接收光以检测由衬底转移装置转移的衬底的光接收单元，以及控制器，用于接收来自光接收单元的接收光量的数据。多个相互不重叠的光量范围预先登记在控制器中，并且当从发光单元发射的光通过基板到达光接收器单元时，控制器识别哪个预注册的光量范围是接收光量，并根据识别的光量范围输出命令。

2. 发明申请

US20060150904A1 Substrate-processing apparatus and method of producing a semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US20060150904A1
公开(公告)日：2006-07-13
申请号：US10528137
申请日：2004-02-20
申请人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
发明人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： C23C16/4409 , C23C16/4401 , C30B25/08
摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.
摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在所述小室（43）中的用于允许所述第一气体流入所述反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的用于将第二气体供应到所述反应炉（39）中的进料管（a1）。诸如NH 4 Cl的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产产量因此增加。

3. 发明申请

US20120006268A1 SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：基板处理装置及制造半导体器件的方法
公开(公告)号：US20120006268A1
公开(公告)日：2012-01-12
申请号：US13239889
申请日：2011-09-22
申请人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
发明人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
IPC分类号： C23C16/44
CPC分类号： C23C16/4409 , C23C16/4401 , C30B25/08
摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.
摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在小室（43）中的用于允许第一气体流入反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的供给管（19a），用于向所述反应炉（39）供给第二气体。诸如NH 4 Cl之类的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产率提高。

4. 发明授权

US08057599B2 Substrate processing apparatus and method for manufacturing a semiconductor device 有权
公开(公告)号：US08057599B2
公开(公告)日：2011-11-15
申请号：US10528137
申请日：2004-02-20
申请人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
发明人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
IPC分类号： H01L21/205 , H01L21/316
CPC分类号： C23C16/4409 , C23C16/4401 , C30B25/08
摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.

5. 发明授权

US08043431B2 Substrate processing apparatus and method for manufacturing a semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08043431B2
公开(公告)日：2011-10-25
申请号：US12382082
申请日：2009-03-09
申请人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
发明人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
IPC分类号： H01L21/205 , H01L21/316
CPC分类号： C23C16/4409 , C23C16/4401 , C30B25/08
摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.
摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在小室（43）中的用于允许第一气体流入反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的供给管（19a），用于向所述反应炉（39）供给第二气体。诸如NH 4 Cl之类的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产率提高。

6. 发明授权

US08282737B2 Substrate processing apparatus and method for manufacturing a semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08282737B2
公开(公告)日：2012-10-09
申请号：US13239889
申请日：2011-09-22
申请人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
发明人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
IPC分类号： C23C16/44
CPC分类号： C23C16/4409 , C23C16/4401 , C30B25/08
摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.
摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在小室（43）中的用于允许第一气体流入反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的供给管（19a），用于向所述反应炉（39）供给第二气体。诸如NH 4 Cl之类的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产率提高。

7. 发明申请

US20090188431A1 Substrate processing apparatus and method for manufacturing a semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US20090188431A1
公开(公告)日：2009-07-30
申请号：US12382082
申请日：2009-03-09
申请人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
发明人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
IPC分类号： C23C16/00
CPC分类号： C23C16/4409 , C23C16/4401 , C30B25/08
摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.
摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在小室（43）中的用于允许第一气体流入反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的供给管（19a），用于向所述反应炉（39）供给第二气体。诸如NH 4 Cl之类的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产率提高。

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