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    • 2. 发明申请
    • Method of Crystallizing Amorphous Silicon Films by Microwave Irradiation
    • 通过微波辐射结晶无定形硅膜的方法
    • US20130029497A1
    • 2013-01-31
    • US13399575
    • 2012-02-17
    • Tsung-Shune ChinTsun-Hsu ChangShih-Chieh FongHsien-Wen Chao
    • Tsung-Shune ChinTsun-Hsu ChangShih-Chieh FongHsien-Wen Chao
    • H01L21/322
    • H01L21/02672H01L21/02532
    • A method is developed to crystallize amorphous silicon (a-Si) thin films, in cold environment, by combining microwave-absorbing materials (MAM) and microwave irradiation. The MAM is set on top or around of the a-Si thin film. MAM composes of dielectric, magnetic, semiconductor, ferroelectric and carbonaceous material oxides, carbides, nitrides and borides, which will absorb and concentrate electric or magnetic field of the microwave. The microwave frequency is selected from 1 to 50 GHz, at a power density not less than 5 W/cm2. Temperature rise of the MAM is monitored and controlled by an optical pyrometer to be less than 600° C., and better be within 400-500° C. The application of MAM at patterned local areas leads to localized heating and crystallization of a-Si film right at the patterns to facilitate manufacture of semiconductor devices.
    • 通过组合微波吸收材料(MAM)和微波照射,开发了一种在寒冷环境下结晶非晶硅(a-Si)薄膜的方法。 MAM设置在a-Si薄膜的顶部或周围。 MAM组成电介质,磁性,半导体,铁电和碳质材料的氧化物,碳化物,氮化物和硼化物,其将吸收和集中微波的电场或磁场。 微波频率选择1〜50GHz,功率密度不小于5W / cm2。 MAM的温度升高由光学高温计监控和控制,低于600℃,最好在400-500℃之间。在图案化局部区域的MAM的应用导致局部加热和a-Si的结晶 电影就是以图案方式制造半导体器件。