会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Semiconductor memory device and method of fabricating the same
    • 半导体存储器件及其制造方法
    • US09478561B2
    • 2016-10-25
    • US14960776
    • 2015-12-07
    • Chaeho KimSangryol YangWoong LeeSeungHyun Lim
    • Chaeho KimSangryol YangWoong LeeSeungHyun Lim
    • H01L27/105H01L27/115H01L29/51H01L29/423
    • H01L27/11582H01L27/11565H01L27/11573H01L27/11575H01L29/42348H01L29/513
    • A semiconductor memory device includes a stack including gate electrodes and insulating layers that are alternately and repeatedly stacked on a substrate. A cell channel structure penetrates the stack. The cell channel structure includes a first semiconductor pattern contacting the substrate and a first channel pattern on the first semiconductor pattern. The first semiconductor pattern extends to a first height from a surface of the substrate to a top surface of the first semiconductor pattern. A dummy channel structure on the substrate and spaced apart from the stack. The dummy channel structure includes a second semiconductor pattern contacting the substrate and a second channel pattern on the second semiconductor pattern. The second semiconductor pattern extends to a second height from the surface of the substrate to a top surface of the second semiconductor pattern. The first height is greater than the second height.
    • 一种半导体存储器件包括:堆叠,其包括交替重复堆叠在衬底上的栅电极和绝缘层。 细胞通道结构穿透堆叠。 单元沟道结构包括与基板接触的第一半导体图案和第一半导体图案上的第一沟道图案。 第一半导体图案延伸到从基板的表面到第一半导体图案的顶表面的第一高度。 衬底上的虚拟通道结构,与堆叠间隔开。 虚设通道结构包括接触衬底的第二半导体图案和第二半导体图案上的第二沟道图案。 第二半导体图案延伸到从基板的表面到第二半导体图案的顶表面的第二高度。 第一个高度大于第二个高度。
    • 8. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    • 半导体存储器件及其制造方法
    • US20160225785A1
    • 2016-08-04
    • US14960776
    • 2015-12-07
    • Chaeho KIMSangryol YangWoong LeeSeungHyun Lim
    • Chaeho KIMSangryol YangWoong LeeSeungHyun Lim
    • H01L27/115H01L29/423H01L29/51
    • H01L27/11582H01L27/11565H01L27/11573H01L27/11575H01L29/42348H01L29/513
    • A semiconductor memory device includes a stack including gate electrodes and insulating layers that are alternately and repeatedly stacked on a substrate. A cell channel structure penetrates the stack. The cell channel structure includes a first semiconductor pattern contacting the substrate and a first channel pattern on the first semiconductor pattern. The first semiconductor pattern extends to a first height from a surface of the substrate to a top surface of the first semiconductor pattern. A dummy channel structure on the substrate and spaced apart from the stack. The dummy channel structure includes a second semiconductor pattern contacting the substrate and a second channel pattern on the second semiconductor pattern. The second semiconductor pattern extends to a second height from the surface of the substrate to a top surface of the second semiconductor pattern. The first height is greater than the second height.
    • 一种半导体存储器件包括:堆叠,其包括交替重复堆叠在衬底上的栅电极和绝缘层。 细胞通道结构穿透堆叠。 单元沟道结构包括与基板接触的第一半导体图案和第一半导体图案上的第一沟道图案。 第一半导体图案延伸到从基板的表面到第一半导体图案的顶表面的第一高度。 衬底上的虚拟通道结构,与堆叠间隔开。 虚设通道结构包括接触衬底的第二半导体图案和第二半导体图案上的第二沟道图案。 第二半导体图案延伸到从基板的表面到第二半导体图案的顶表面的第二高度。 第一个高度大于第二个高度。