专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07009888B2 Low voltage, island-layer-based nonvolatile semiconductor storage device with floating biased memory cell channel 有权
标题翻译：具有浮置偏置存储单元通道的低电压，基于岛的非易失性半导体存储器件
公开(公告)号：US07009888B2
公开(公告)日：2006-03-07
申请号：US10888693
申请日：2004-07-08
申请人： Fujio Masuoka , Hiroshi Sakuraba , Fumiyoshi Matsuoka , Syounosuke Ueno , Ryusuke Matsuyama , Shinji Horii
发明人： Fujio Masuoka , Hiroshi Sakuraba , Fumiyoshi Matsuoka , Syounosuke Ueno , Ryusuke Matsuyama , Shinji Horii
IPC分类号： G11C16/12
CPC分类号： H01L27/11556 , G09G3/3611 , G09G2320/0285 , G11C16/0433 , G11C16/14 , H01L27/115 , H01L29/7881 , H01L29/7887
摘要： A method for driving a nonvolatile memory device including a semiconductor substrate, an island semiconductor layer on the substrate, a memory cell having a control gate and a charge storage layer surrounding a peripheral surface of the island semiconductor layer, a first selection transistor provided between the memory cell and the substrate and having a first selection gate, a source diffusion layer between the substrate and the island semiconductor layer, a drain diffusion layer provided in an opposing end of the island semiconductor layer from the source diffusion layer, and a second selection transistor provided between the memory cell and the drain diffusion layer and having a second selection gate, the method comprising the steps of: applying a negative first voltage to the drain and the first selection gate, applying a positive second voltage to the second selection gate, and applying 0V or a positive third voltage to the source; and applying a positive fourth voltage higher than the second voltage to the control gate of the memory cell for injecting electric charges into the charge storage layer.
摘要翻译：一种用于驱动包括半导体衬底，在衬底上的岛状半导体层，具有控制栅极的存储单元和围绕岛状半导体层的外围表面的电荷存储层的非易失性存储器件的方法，存储单元和基板，并且具有第一选择栅极，在基板和岛状半导体层之间的源极扩散层，设置在岛状半导体层与源极扩散层相对的端部的漏极扩散层，以及第二选择晶体管设置在所述存储单元和所述漏极扩散层之间并具有第二选择栅极，所述方法包括以下步骤：向所述漏极和所述第一选择栅极施加负的第一电压，向所述第二选择栅极施加正的第二电压，以及向源施加0V或正的第三电压; 以及将高于第二电压的正的第四电压施加到用于向电荷存储层注入电荷的存储单元的控制栅极。

2. 发明申请

US20050063237A1 Memory cell unit, nonvolatile semiconductor storage device including memory cell unit, and memory cell array driving method 有权
标题翻译：存储单元单元，包括存储单元单元的非易失性半导体存储器件和存储单元阵列驱动方法
公开(公告)号：US20050063237A1
公开(公告)日：2005-03-24
申请号：US10941505
申请日：2004-09-14
申请人： Fujio Masuoka , Hiroshi Sakuraba , Fumiyoshi Matsuoka , Syounosuke Ueno , Ryusuke Matsuyama , Shinji Horii , Takuji Tanigami
发明人： Fujio Masuoka , Hiroshi Sakuraba , Fumiyoshi Matsuoka , Syounosuke Ueno , Ryusuke Matsuyama , Shinji Horii , Takuji Tanigami
IPC分类号： G11C16/02 , G11C7/00 , G11C16/04 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7926 , G11C16/0483 , H01L27/115 , H01L27/11556 , H01L29/7881 , H01L29/792
摘要： A memory cell unit including: a semiconductor substrate having a source diffusion layer in at least a part of a surface thereof; a column-shaped semiconductor layer provided on the semiconductor substrate, and having a drain diffusion layer provided in an uppermost portion thereof and a first low concentration impurity diffusion layer provided in an entire bottom portion thereof; a memory cell arrangement which includes a plurality of memory cells provided in a peripheral wall of the column-shaped semiconductor layer and connected in series perpendicularly to the substrate, the memory cells each having a charge storage layer and a control gate; a second impurity diffusion layer provided at a lower end of the memory cell arrangement; and a selection transistor having a gate electrode provided around the peripheral wall of the column-shaped semiconductor layer and connecting the second impurity diffusion layer and the first impurity diffusion layer; wherein the first impurity diffusion layer extends into a part of a channel region provided in the peripheral wall of the column-shaped semiconductor layer in opposed relation to the gate electrode of the selection transistor.
摘要翻译：一种存储单元，包括：在其表面的至少一部分中具有源极扩散层的半导体衬底; 设置在半导体基板上的柱状半导体层，在其最上部设置有漏极扩散层，在底部设置有第一低浓度杂质扩散层; 存储单元布置，其包括设置在所述列状半导体层的周壁中且与所述基板垂直串联连接的多个存储单元，所述存储单元各自具有电荷存储层和控制栅极; 设置在所述存储单元布置的下端的第二杂质扩散层; 以及选择晶体管，其具有设置在所述柱状半导体层的周壁周围的栅电极，并且连接所述第二杂质扩散层和所述第一杂质扩散层; 其中所述第一杂质扩散层延伸到与所述选择晶体管的栅电极相对的所述柱状半导体层的周壁中设置的沟道区的一部分。

3. 发明授权

US09366442B2 Pilot fuel injector with swirler 有权
标题翻译：先导燃油喷射器与旋流器
公开(公告)号：US09366442B2
公开(公告)日：2016-06-14
申请号：US13485258
申请日：2012-05-31
申请人： Ryusuke Matsuyama , Masayoshi Kobayashi , Takeo Oda , Atsushi Horikawa , Shigeru Hayashi , Kazuo Shimodaira , Kazuaki Matsuura , Hideshi Yamada , Youji Kurosawa , Hitoshi Fujiwara
发明人： Ryusuke Matsuyama , Masayoshi Kobayashi , Takeo Oda , Atsushi Horikawa , Shigeru Hayashi , Kazuo Shimodaira , Kazuaki Matsuura , Hideshi Yamada , Youji Kurosawa , Hitoshi Fujiwara
IPC分类号： F23R3/34 , F23R3/28
CPC分类号： F23R3/343 , F23R3/286
摘要： A fuel injector includes: a pilot injector configured to spray fuel so as to form a first combustion region in a combustion chamber; and a main injector provided coaxially with the pilot injector so as to surround the pilot injector and configured to supply a fuel-air mixture that is a mixture of the fuel and air to form a second combustion region in the combustion chamber, wherein the pilot injector includes: a center nozzle configured to eject air jet flowing straight in an axial direction on a central axis of the pilot injector; an inside swirler provided on a radially outer side of the center nozzle and configured to cause inflow air to swirl around the central axis; and a pilot fuel injecting portion configured to inject the fuel from between the center nozzle and the inside swirler to air flow in the center nozzle.
摘要翻译：燃料喷射器包括：引燃喷射器，构造成喷射燃料以在燃烧室中形成第一燃烧区域; 以及主喷射器，其与所述引导喷射器同轴地设置成围绕所述引导喷射器并且构造成供应作为所述燃料和空气的混合物的燃料 - 空气混合物以在所述燃烧室中形成第二燃烧区域，其中所述引导喷射器包括：中心喷嘴，其构造成喷射在所述先导喷射器的中心轴线上沿轴向直线流动的喷气; 设置在中心喷嘴的径向外侧的内旋流器，其构造成使流入空气围绕中心轴旋转; 以及配置成将来自中心喷嘴和内部旋流器之间的燃料喷射到中心喷嘴中的空气流的引燃燃料喷射部。

4. 发明申请

US20130036739A1 GAS TURBINE COMBUSTOR 有权
标题翻译：气体涡轮搅拌机
公开(公告)号：US20130036739A1
公开(公告)日：2013-02-14
申请号：US13575938
申请日：2010-11-29
申请人： Atsushi Horikawa , Hideki Ogata , Kenta Yamaguchi , Ryusuke Matsuyama
发明人： Atsushi Horikawa , Hideki Ogata , Kenta Yamaguchi , Ryusuke Matsuyama
IPC分类号： F02C3/16
CPC分类号： F23R3/14 , F23R3/28
摘要： A gas turbine combustor 1 of the present invention comprises a fuel injector 13 for injecting a fuel F toward a combustion chamber 11; a swirler 14 which takes-in compressed air CA generated in a compressor and swirl the compressed air CA, in the vicinity of the fuel injector 13; a tubular guide member 34 for guiding the compressed air CA taken-in from the swirler 14, to the combustion chamber 11; and a heat shield 23 having a cylindrical portion 23b located outward relative to the guide member 34; wherein the cylindrical portion 23b has a purge hole 40; and air is introduced through the purge hole 40 and is supplied to a space 39 formed between the guide member 34 and the cylindrical portion 23b.
摘要翻译：本发明的燃气轮机燃烧器1包括用于向燃烧室11喷射燃料F的燃料喷射器13; 旋流器14，其接收在压缩机中产生的压缩空气CA，并使燃料喷射器13附近的压缩空气CA旋转; 用于将从旋流器14引入的压缩空气CA引导到燃烧室11的管状引导构件34; 以及具有相对于引导构件34位于外侧的圆筒部23b的隔热罩23; 其中圆柱形部分23b具有吹扫孔40; 并且通过吹扫孔40引入空气，并将其供给到形成在引导构件34和圆筒部23b之间的空间39。

5. 发明授权

US07088617B2 Nonvolatile semiconductor storage device, and liquid crystal display device including the same 有权
标题翻译：非易失性半导体存储装置以及包含该非易失性半导体存储装置的液晶显示装置
公开(公告)号：US07088617B2
公开(公告)日：2006-08-08
申请号：US10919777
申请日：2004-08-16
申请人： Fujio Masuoka , Hiroshi Sakuraba , Fumiyoshi Matsuoka , Syounosuke Ueno , Ryusuke Matsuyama , Shinji Horii
发明人： Fujio Masuoka , Hiroshi Sakuraba , Fumiyoshi Matsuoka , Syounosuke Ueno , Ryusuke Matsuyama , Shinji Horii
IPC分类号： G11C16/04
CPC分类号： G11C16/0483
摘要： A nonvolatile semiconductor storage device including: a plurality of memory cell unit groups each comprising one or more NAND nonvolatile memory cell units each comprising at least one memory cell having a control gate, a first selection transistor having a first selection gate, and a second selection transistor having a second selection gate, the memory cell unit groups each further comprising a control gate line connected to the control gate, a first selection gate line connected to the first selection gate, and a second selection gate line connected to the second selection gate; a common control gate line connected commonly to the control gate lines of different ones of the memory cell unit groups; a first common selection gate line connected commonly to the first selection gate lines of different ones of the memory cell unit groups; and a second common selection gate line connected commonly to the second selection gate lines of different ones of the memory cell unit groups; wherein the memory cells in the respective memory cell unit groups are each uniquely selected on the basis of a combination of the common control gate line and the first and second common selection gate lines.
摘要翻译：一种非易失性半导体存储装置，包括：多个存储单元单元组，每个存储单元单元组包括一个或多个NAND非易失性存储单元单元，每个非易失性存储单元单元包括至少一个具有控制栅极的存储单元，晶体管具有第二选择栅极，所述存储单元单元组还包括连接到所述控制栅极的控制栅极线，连接到所述第一选择栅极的第一选择栅极线和连接到所述第二选择栅极的第二选择栅极线; 公共控制栅极线，共同地连接到不同的存储单元单元组的控制栅极线; 第一公共选择栅极线，共同连接到不同的存储单元单元组的第一选择栅极线; 以及第二公共选择栅极线，共同连接到不同的存储单元单元组的第二选择栅极线; 其中各个存储单元单元组中的存储单元是基于公共控制栅极线和第一和第二公共选择栅极线的组合而被唯一地选择的。

6. 发明申请

US20120305673A1 FUEL INJECTOR 有权
标题翻译：喷油器
公开(公告)号：US20120305673A1
公开(公告)日：2012-12-06
申请号：US13485258
申请日：2012-05-31
申请人： Ryusuke Matsuyama , Masayoshi Kobayashi , Takeo Oda , Atsushi Horikawa , Shigeru Hayashi , Kazuo Shimodaira , Kazuaki Matsuura , Hideshi Yamada , Youji Kurosawa , Hitoshi Fujiwara
发明人： Ryusuke Matsuyama , Masayoshi Kobayashi , Takeo Oda , Atsushi Horikawa , Shigeru Hayashi , Kazuo Shimodaira , Kazuaki Matsuura , Hideshi Yamada , Youji Kurosawa , Hitoshi Fujiwara
IPC分类号： F02M63/00
CPC分类号： F23R3/343 , F23R3/286
摘要： A fuel injector includes: a pilot injector configured to spray fuel so as to form a first combustion region in a combustion chamber; and a main injector provided coaxially with the pilot injector so as to surround the pilot injector and configured to supply a fuel-air mixture that is a mixture of the fuel and air to form a second combustion region in the combustion chamber, wherein the pilot injector includes: a center nozzle configured to eject air jet flowing straight in an axial direction on a central axis of the pilot injector; an inside swirler provided on a radially outer side of the center nozzle and configured to cause inflow air to swirl around the central axis; and a pilot fuel injecting portion configured to inject the fuel from between the center nozzle and the inside swirler to air flow in the center nozzle.
摘要翻译：燃料喷射器包括：引燃喷射器，构造成喷射燃料以在燃烧室中形成第一燃烧区域; 以及主喷射器，其与所述引导喷射器同轴地设置成围绕所述引导喷射器并且构造成供应作为所述燃料和空气的混合物的燃料 - 空气混合物以在所述燃烧室中形成第二燃烧区域，其中所述引导喷射器包括：中心喷嘴，其构造成喷射在所述先导喷射器的中心轴线上沿轴向直线流动的喷气; 设置在中心喷嘴的径向外侧的内旋流器，其构造成使流入空气围绕中心轴旋转; 以及配置成将来自中心喷嘴和内部旋流器之间的燃料喷射到中心喷嘴中的空气流的引燃燃料喷射部。

7. 发明申请

US20120304649A1 FUEL INJECTOR 有权
标题翻译：喷油器
公开(公告)号：US20120304649A1
公开(公告)日：2012-12-06
申请号：US13485383
申请日：2012-05-31
申请人： Ryusuke MATSUYAMA , Masayoshi KOBAYASHI , Takeo ODA , Atsushi HORIKAWA , Shigeru HAYASHI , Kazuo SHIMODAIRA , Kazuaki MATSUURA , Hideshi YAMADA , Youji KUROSAWA , Hitoshi FUJIWARA
发明人： Ryusuke MATSUYAMA , Masayoshi KOBAYASHI , Takeo ODA , Atsushi HORIKAWA , Shigeru HAYASHI , Kazuo SHIMODAIRA , Kazuaki MATSUURA , Hideshi YAMADA , Youji KUROSAWA , Hitoshi FUJIWARA
IPC分类号： F02C7/22
CPC分类号： F23R3/14 , F23R3/286 , Y02T50/675
摘要： A fuel injector includes: a pilot injector configured to spray fuel so as to form a first combustion region in a combustion chamber; and a main injector provided coaxially with the pilot injector so as to surround the pilot injector and configured to supply a fuel-air mixture that is a mixture of the fuel and air to form a second combustion region in the combustion chamber, wherein the main injector includes: a first inflow channel through which the air having a major flow component in an axial direction is taken; a second inflow channel through which the air having a major flow component in a radial direction is taken and which causes the air therein to meet the air from the first inflow channel; and a main fuel injecting portion configured to inject the fuel only to the second inflow channel.
摘要翻译：燃料喷射器包括：引燃喷射器，构造成喷射燃料以在燃烧室中形成第一燃烧区域; 以及主喷射器，其与所述先导喷射器同轴地设置成围绕所述引燃喷射器并且构造成供应作为所述燃料和空气的混合物的燃料 - 空气混合物以在所述燃烧室中形成第二燃烧区域，其中所述主喷射器包括：沿轴向方向具有主要流动分量的空气通过该第一流入通道; 第二流入通道，其中沿着径向方向具有主要流动分量的空气通过该第二流入通道引起其中的空气与来自第一流入通道的空气相遇; 以及主燃料喷射部，其构造成仅将燃料喷射到第二流入流路。

8. 发明申请

US20050012134A1 Nonvolatile memory device driving method, semiconductor storage device, and liquid crystal display device including the semiconductor storage device 有权
标题翻译：非易失性存储器件驱动方法，半导体存储器件和包括半导体存储器件的液晶显示器件
公开(公告)号：US20050012134A1
公开(公告)日：2005-01-20
申请号：US10888693
申请日：2004-07-08
申请人： Fujio Masuoka , Hiroshi Sakuraba , Fumiyoshi Matsuoka , Syounosuke Ueno , Ryusuke Matsuyama , Shinji Horii
发明人： Fujio Masuoka , Hiroshi Sakuraba , Fumiyoshi Matsuoka , Syounosuke Ueno , Ryusuke Matsuyama , Shinji Horii
IPC分类号： G02F1/1343 , G02F1/133 , G09G3/36 , G11C16/02 , G11C16/04 , G11C16/06 , G11C16/12 , G11C16/14 , G11C16/30 , H01L21/8247 , H01L27/10 , H01L27/115 , H01L29/788 , H01L29/792 , H01L21/336 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/11556 , G09G3/3611 , G09G2320/0285 , G11C16/0433 , G11C16/14 , H01L27/115 , H01L29/7881 , H01L29/7887
摘要： A method for driving a nonvolatile memory device including a semiconductor substrate, an island semiconductor layer on the substrate, a memory cell having a control gate and a charge storage layer surrounding a peripheral surface of the island semiconductor layer, a first selection transistor provided between the memory cell and the substrate and having a first selection gate, a source diffusion layer between the substrate and the island semiconductor layer, a drain diffusion layer provided in an opposing end of the island semiconductor layer from the source diffusion layer, and a second selection transistor provided between the memory cell and the drain diffusion layer and having a second selection gate, the method comprising the steps of: applying a negative first voltage to the drain and the first selection gate, applying a positive second voltage to the second selection gate, and applying 0V or a positive third voltage to the source; and applying a positive fourth voltage higher than the second voltage to the control gate of the memory cell for injecting electric charges into the charge storage layer.
摘要翻译：一种用于驱动包括半导体衬底，在衬底上的岛状半导体层，具有控制栅极的存储单元和围绕岛状半导体层的外围表面的电荷存储层的非易失性存储器件的方法，存储单元和基板，并且具有第一选择栅极，在基板和岛状半导体层之间的源极扩散层，设置在岛状半导体层与源极扩散层相对的端部的漏极扩散层，以及第二选择晶体管设置在所述存储单元和所述漏极扩散层之间并具有第二选择栅极，所述方法包括以下步骤：向所述漏极和所述第一选择栅极施加负的第一电压，向所述第二选择栅极施加正的第二电压，以及向源施加0V或正的第三电压; 以及将高于第二电压的正的第四电压施加到用于向电荷存储层注入电荷的存储单元的控制栅极。

9. 发明授权

US08783038B2 Gas turbine combustor 有权
标题翻译：燃气轮机燃烧器
公开(公告)号：US08783038B2
公开(公告)日：2014-07-22
申请号：US13575938
申请日：2010-11-29
申请人： Atsushi Horikawa , Hideki Ogata , Kenta Yamaguchi , Ryusuke Matsuyama
发明人： Atsushi Horikawa , Hideki Ogata , Kenta Yamaguchi , Ryusuke Matsuyama
IPC分类号： F02C1/00 , F23R3/28 , F23R3/14
CPC分类号： F23R3/14 , F23R3/28
摘要： A gas turbine combustor of the present invention comprises a fuel injector for injecting a fuel toward a combustion chamber; a swirler which takes-in compressed air generated in a compressor and swirls the compressed air, in the vicinity of the fuel injector; a tubular guide member for guiding the compressed air taken-in from the swirler, to the combustion chamber; and a heat shield having a cylindrical portion located outward relative to the guide member; wherein the cylindrical portion has a purge hole; and air is introduced through the purge hole and is supplied to a space formed between the guide member and the cylindrical portion.
摘要翻译：本发明的燃气轮机燃烧器包括用于向燃烧室喷射燃料的燃料喷射器; 旋转器，其在燃料喷射器附近吸入在压缩机中产生的压缩空气并使压缩空气旋转; 用于将从旋流器吸入的压缩空气引导到燃烧室的管状引导构件; 以及隔热罩，其具有相对于所述引导构件位于外侧的圆筒部; 其中所述圆柱形部分具有净化孔; 并且通过吹扫孔引入空气，并且被供应到形成在引导构件和圆柱形部分之间的空间。

10. 发明授权

US07387935B2 Memory cell unit, nonvolatile semiconductor storage device including memory cell unit, and memory cell array driving method 有权
标题翻译：存储单元单元，包括存储单元单元的非易失性半导体存储器件和存储单元阵列驱动方法
公开(公告)号：US07387935B2
公开(公告)日：2008-06-17
申请号：US10941505
申请日：2004-09-14
申请人： Fujio Masuoka , Hiroshi Sakuraba , Fumiyoshi Matsuoka , Syounosuke Ueno , Ryusuke Matsuyama , Shinji Horii , Takuji Tanigami
发明人： Fujio Masuoka , Hiroshi Sakuraba , Fumiyoshi Matsuoka , Syounosuke Ueno , Ryusuke Matsuyama , Shinji Horii , Takuji Tanigami
IPC分类号： H01L21/336 , G11C16/04
CPC分类号： H01L29/7926 , G11C16/0483 , H01L27/115 , H01L27/11556 , H01L29/7881 , H01L29/792
摘要： A memory cell unit including: a semiconductor substrate having a source diffusion layer in at least a part of a surface thereof; a column-shaped semiconductor layer provided on the semiconductor substrate, and having a drain diffusion layer provided in an uppermost portion thereof and a first low concentration impurity diffusion layer provided in an entire bottom portion thereof; a memory cell arrangement which includes a plurality of memory cells provided in a peripheral wall of the column-shaped semiconductor layer and connected in series perpendicularly to the substrate, the memory cells each having a charge storage layer and a control gate; a second impurity diffusion layer provided at a lower end of the memory cell arrangement; and a selection transistor having a gate electrode provided around the peripheral wall of the column-shaped semiconductor layer and connecting the second impurity diffusion layer and the first impurity diffusion layer; wherein the first impurity diffusion layer extends into a part of a channel region provided in the peripheral wall of the column-shaped semiconductor layer in opposed relation to the gate electrode of the selection transistor.
摘要翻译：一种存储单元，包括：在其表面的至少一部分中具有源极扩散层的半导体衬底; 设置在半导体基板上的柱状半导体层，在其最上部设置有漏极扩散层，在底部设置有第一低浓度杂质扩散层; 存储单元布置，其包括设置在所述列状半导体层的周壁中并且与所述基板垂直串联连接的多个存储单元，所述存储单元各自具有电荷存储层和控制栅极; 设置在所述存储单元布置的下端的第二杂质扩散层; 以及选择晶体管，其具有设置在所述柱状半导体层的周壁周围的栅电极，并且连接所述第二杂质扩散层和所述第一杂质扩散层; 其中所述第一杂质扩散层延伸到与所述选择晶体管的栅电极相对的所述柱状半导体层的周壁中设置的沟道区的一部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式