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1. 发明申请

US20090080236A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20090080236A1
公开(公告)日：2009-03-26
申请号：US12211501
申请日：2008-09-16
申请人： Ryoichi Nakamura
发明人： Ryoichi Nakamura
IPC分类号： G11C11/00 , G11C11/34 , H01L21/00 , H01L21/336
CPC分类号： G11C11/417 , H01L27/11 , H01L27/1104
摘要： Disclosed herein is a semiconductor memory device including a plurality of memory cells including first and second inverters each having first and second driver transistors and first and second load transistors and including first and second memory node, and first and second transfer transistors. The of the first and second transfer transistors is connected to each of the first and memory nodes respectively. The memory cell is connected to a bit line and complementary bit line via the first and second transfer transistors respectively wherein a supply voltage applied to the bit line and the complementary bit line is lower than a supply voltage applied to the load transistors, and at least a memory-node-side end of a gate insulating film of the first driver transistor, second driver transistor, first load transistor, and the second load transistor have a thickness larger than a thickness of a gate insulating film of the other part.
摘要翻译：本文公开了一种半导体存储器件，其包括多个存储单元，其包括第一和第二反相器，每个具有第一和第二驱动晶体管以及第一和第二负载晶体管，并且包括第一和第二存储器节点以及第一和第二转移晶体管。第一和第二传输晶体管分别连接到第一和存储器节点中的每一个。存储单元经由第一和第二传输晶体管分别连接到位线和互补位线，其中施加到位线和互补位线的电源电压低于施加到负载晶体管的电源电压，并且至少第一驱动晶体管，第二驱动晶体管，第一负载晶体管和第二负载晶体管的栅极绝缘膜的存储器节点侧端部的厚度大于另一部分的栅极绝缘膜的厚度。

2. 发明授权

US07414291B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07414291B2
公开(公告)日：2008-08-19
申请号：US11099511
申请日：2005-04-06
申请人： Shigetomi Michimata , Ryo Nagai , Satoru Yamada , Yoshitaka Nakamura , Ryoichi Nakamura
发明人： Shigetomi Michimata , Ryo Nagai , Satoru Yamada , Yoshitaka Nakamura , Ryoichi Nakamura
IPC分类号： H01L29/72
CPC分类号： H01L21/28518 , H01L21/743 , H01L21/76805 , H01L21/76814 , H01L29/78
摘要： A method includes the steps of: implanting boron into a surface region of a silicon substrate to form a p+ diffused region; implanting indium into the surface of the p+ diffused region, to form an indium-implanted layer; forming a contact metal layer on the indium-implanted layer; and reacting silicon in the silicon substrate including the indium-implanted layer with metal in the contact metal layer to form a titanium silicide layer.
摘要翻译：一种方法包括以下步骤：将硼注入到硅衬底的表面区域中以形成p + +扩散区; 将铟注入到扩散区域的表面中以形成铟注入层; 在铟注入层上形成接触金属层; 并且在包含铟注入层的硅衬底中的硅与金属在接触金属层中反应以形成硅化钛层。

3. 发明申请

US20050230712A1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050230712A1
公开(公告)日：2005-10-20
申请号：US11099511
申请日：2005-04-06
申请人： Shigetomi Michimata , Ryo Nagai , Satoru Yamada , Yoshitaka Nakamura , Ryoichi Nakamura
发明人： Shigetomi Michimata , Ryo Nagai , Satoru Yamada , Yoshitaka Nakamura , Ryoichi Nakamura
IPC分类号： H01L21/28 , H01L21/26 , H01L21/265 , H01L21/283 , H01L21/285 , H01L21/3205 , H01L21/74 , H01L21/768 , H01L23/52 , H01L27/10 , H01L29/78
CPC分类号： H01L21/28518 , H01L21/743 , H01L21/76805 , H01L21/76814 , H01L29/78
摘要： A method includes the steps of: implanting boron into a surface region of a silicon substrate to form a p+ diffused region; implanting indium into the surface of the p+ diffused region, to form an indium-implanted layer; forming a contact metal layer on the indium-implanted layer; and reacting silicon in the silicon substrate including the indium-implanted layer with metal in the contact metal layer to form a titanium silicide layer.
摘要翻译：一种方法包括以下步骤：将硼注入到硅衬底的表面区域中以形成p + +扩散区; 将铟注入到扩散区域的表面中以形成铟注入层; 在铟注入层上形成接触金属层; 并且在包含铟注入层的硅衬底中的硅与金属在接触金属层中反应以形成硅化钛层。

4. 发明授权

US06653230B2 Semiconductor device having concave electrode and convex electrode and method of manufacturing thereof 失效
公开(公告)号：US06653230B2
公开(公告)日：2003-11-25
申请号：US10119023
申请日：2002-04-10
申请人： Ryoichi Nakamura
发明人： Ryoichi Nakamura
IPC分类号： H01L214763
CPC分类号： H01L27/10855 , H01L27/10811 , H01L27/10888 , H01L28/84 , H01L28/91
摘要： It is intended to enable simultaneous formation of concave capacitor storage electrodes and a convex bit contact plug electrode and thereby makes it possible to reduce spaces of margins for alignment errors by decreasing the number of lithography steps. Gate electrodes are formed on a p-well in such a manner that the gate electrode interval in storage electrode forming portions is longer than that in a bit contact plug forming portion, and sidewalls are then formed. An SiO2 film is deposited, storage electrode forming holes and a bit contact plug forming holes are formed therein, and then a polysilicon film is deposited. Another SiO2 film is deposited on the polysilicon film and etched back. Then, the polysilicon film is etched back. After etching of the SiO2 films, capacitor insulating films and counter electrodes are formed and a bit line is also formed.

5. 发明授权

US06611031B2 Semiconductor device and method for its manufacture 有权
公开(公告)号：US06611031B2
公开(公告)日：2003-08-26
申请号：US09965693
申请日：2001-09-27
申请人： Ryoichi Nakamura
发明人： Ryoichi Nakamura
IPC分类号： H01L218238
CPC分类号： H01L29/42368 , H01L21/26506 , H01L21/26513 , H01L21/2652 , H01L21/26586 , H01L21/823462
摘要： A semiconductor device is disclosed including an insulated gate field effect transistor (IGFET) having a gate insulating layer (2), a gate electrode (3), and a source-drain layer (5). The IGFET may include a bird's beak insulating film (4) in a region in which the gate insulating layer (2) overlaps the source-drain layer (5). The bird's beak insulating film (4) may have a thickness that is greater than the gate insulating film (2). In this way, inter-band tunneling may be reduced. A plurality of IGFETs may include bird's beak insulating films having different configurations in accordance with operating conditions of the circuit in which the particular IGFET is included.

6. 发明授权

US06597033B1 Semiconductor memory device and manufacturing method thereof 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US06597033B1
公开(公告)日：2003-07-22
申请号：US09552583
申请日：2000-04-19
申请人： Ryoichi Nakamura
发明人： Ryoichi Nakamura
IPC分类号： H01L27108
CPC分类号： H01L28/91 , H01L21/02167 , H01L21/0217 , H01L21/02178 , H01L21/31116 , H01L21/314 , H01L21/31612 , H01L21/3162 , H01L21/3185 , H01L27/10811 , H01L28/84
摘要： A semiconductor device of the present invention has a plurality of capacitors having a cylindrical lower electrode which is formed along the side and the bottom surface of a recess formed in an insulator film over a semiconductor substrate and which is made of silicon having a lot of grained silicon on the surface, and a protector film with resistance to etching of a silicon oxide film is formed at least on the upper surface of the insulator film positioned between the adjacent lower electrodes.
摘要翻译：本发明的半导体器件具有多个电容器，该电容器具有沿半导体衬底上形成绝缘膜的凹部的侧面和底面形成的圆柱形下电极，该半导体衬底由具有大量晶粒的硅制成至少在位于相邻的下电极之间的绝缘体膜的上表面上形成表面上的硅，以及具有耐氧化硅膜蚀刻性的保护膜。

7. 发明授权

US6110753A Semiconductor memory and manufacturing method of the semiconductor memory 失效
标题翻译：半导体存储器和半导体存储器的制造方法
公开(公告)号：US6110753A
公开(公告)日：2000-08-29
申请号：US428790
申请日：1999-10-28
申请人： Ryoichi Nakamura
发明人： Ryoichi Nakamura
IPC分类号： H01L21/316 , H01L21/8242 , H01L27/108 , H01L21/66
CPC分类号： H01L27/10885 , H01L27/10894
摘要： The thickness of the silicon oxide film covering the upper surface of the word lines 111 is thinner than the thickness of the insulation film spacer 127a covering the side of the gate electrode, and in reflection of this phenomenon, the step of the upper surface of the BPSG film 133 becomes smaller than 1/2 of the depth of focus DOF of the KrF excimer laser and bit lines 137a are formed which have a narrower width and interval than the wavelength of the KrF excimer laser free from the disconnection and the short circuit. As a consequence, bit lines have narrower widths and interval than the wavelength of the exposure light without sacrificing the productivity.
摘要翻译：覆盖字线111的上表面的氧化硅膜的厚度比覆盖栅电极一侧的绝缘膜间隔件127a的厚度薄，反映这种现象的是， BPSG膜133变得小于+ E，形成KrF准分子激光器的焦深DOF的1/2 + EE，并且形成位线137a，其宽度和间隔比不含KrF准分子激光器的KrF准分子激光器的波长窄断开和短路。因此，位线具有比曝光光的波长窄的宽度和间隔，而不牺牲生产率。

8. 发明授权

US09469916B2 Method of producing GaAs single crystal and GaAs single crystal wafer 有权
标题翻译：制造GaAs单晶和GaAs单晶晶片的方法
公开(公告)号：US09469916B2
公开(公告)日：2016-10-18
申请号：US14122042
申请日：2012-05-16
申请人： Ryoichi Nakamura , Motoichi Murakami , Takehiro Miyaji
发明人： Ryoichi Nakamura , Motoichi Murakami , Takehiro Miyaji
IPC分类号： C30B11/04 , C30B11/00 , C30B27/00 , C30B29/42
CPC分类号： C30B11/006 , C30B11/00 , C30B27/00 , C30B29/42
摘要： A method of producing a GaAs single crystal having high carrier concentration and high crystallinity and to provide a GaAs single crystal wafer using such a GaAs single crystal. In the method of producing a GaAs single crystal, a vertical boat method is performed with a crucible receiving a seed crystal, a Si material, a GaAs material serving as an impurity, solid silicon dioxide, and a boron oxide material, thereby growing a GaAs single crystal.
摘要翻译：一种制造具有高载流子浓度和高结晶度的GaAs单晶的方法，并且使用这种GaAs单晶来提供GaAs单晶晶片。在制造GaAs单晶的方法中，使用接收晶种的坩埚，Si材料，作为杂质的GaAs材料，固体二氧化硅和氧化硼材料进行垂直舟形法，由此生长GaAs 单晶。

9. 发明申请

US20140205527A1 METHOD OF PRODUCING GAAS SINGLE CRYSTAL AND GAAS SINGLE CRYSTAL WAFER 有权
标题翻译：生产单晶和GAAS单晶的方法
公开(公告)号：US20140205527A1
公开(公告)日：2014-07-24
申请号：US14122042
申请日：2012-05-16
申请人： Ryoichi Nakamura , Motoichi Murakami , Takehiro Miyaji
发明人： Ryoichi Nakamura , Motoichi Murakami , Takehiro Miyaji
IPC分类号： C30B11/00 , C30B29/42
CPC分类号： C30B11/006 , C30B11/00 , C30B27/00 , C30B29/42
摘要： A method of producing a GaAs single crystal having high carrier concentration and high crystallinity and to provide a GaAs single crystal wafer using such a GaAs single crystal. In the method of producing a GaAs single crystal, a vertical boat method is performed with a crucible receiving a seed crystal, a Si material, a GaAs material serving as an impurity, solid silicon dioxide, and a boron oxide material, thereby growing a GaAs single crystal.
摘要翻译：一种制造具有高载流子浓度和高结晶度的GaAs单晶的方法，并且使用这种GaAs单晶来提供GaAs单晶晶片。在制造GaAs单晶的方法中，使用接收晶种的坩埚，Si材料，作为杂质的GaAs材料，固体二氧化硅和氧化硼材料进行垂直舟形法，由此生长GaAs 单晶。

10. 发明申请

US20080294093A1 THERAPEUTIC-SUBSTANCE CARRYING/ADMINISTERING APPLIANCE 有权
标题翻译：治疗物质运送/管理器具
公开(公告)号：US20080294093A1
公开(公告)日：2008-11-27
申请号：US12123005
申请日：2008-05-19
申请人： Masanori MAEDA , Hidenori TAKUSHIMA , Teruo OKANO , Masayuki YAMATO , Hiroshi ISEKI , Ryoichi NAKAMURA , Takamasa ONUKI , Masato KANZAKI , Takashi SUZUKI , Shigeru NAGAI
发明人： Masanori MAEDA , Hidenori TAKUSHIMA , Teruo OKANO , Masayuki YAMATO , Hiroshi ISEKI , Ryoichi NAKAMURA , Takamasa ONUKI , Masato KANZAKI , Takashi SUZUKI , Shigeru NAGAI
IPC分类号： A61B17/00 , A61M37/00
CPC分类号： A61B17/3468
摘要： A therapeutic-substance carrying/administering appliance includes a cylindrical outer sheath; a slide member installed in the cylindrical outer sheath to be slidable therein; and a sheet supporting member, connected to a distal end of the slide member and made of a resilient material, for supporting a sheet-shaped therapeutic substance. The sheet supporting member is held in a flat unrolled shape in a free state in which the sheet supporting member projects outwardly from a distal end of the cylindrical outer sheath. When the sheet supporting member is in the free state, sliding the slide member in a retracting direction causes the sheet supporting member to contact the distal end of the cylindrical outer sheath, and subsequently further moving the slide member in the retracting direction causes the sheet supporting member to be retracted into the cylindrical outer sheath while being deformed into a tubular shape.
摘要翻译：治疗物质携带/给药器具包括圆柱形外护套; 安装在所述圆筒形外护套中的可在其中滑动的滑动构件; 以及片材支撑构件，其连接到滑动构件的远端并由弹性材料制成，用于支撑片状治疗物质。片材支撑构件在自由状态下保持为平坦的未卷曲形状，其中片材支撑构件从圆柱形外护套的远端向外突出。当片材支撑构件处于自由状态时，滑动构件沿缩回方向使片材支撑构件接触圆柱形外护套的远端，并且随后在缩回方向上进一步移动滑动构件使得片材支撑构件在变形为管状时被缩回到圆柱形外护套中。

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