专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5085729A Uniformity using stagnant silylation 失效
标题翻译：均匀性使用停滞的甲硅烷基化
公开(公告)号：US5085729A
公开(公告)日：1992-02-04
申请号：US579120
申请日：1990-09-07
申请人： Cesar M. Garza , Ricky A. Jackson , Ryan E. Priebe
发明人： Cesar M. Garza , Ricky A. Jackson , Ryan E. Priebe
IPC分类号： G03F7/26 , H01L21/3105
CPC分类号： H01L21/31058 , G03F7/265 , Y10S438/948
摘要： A system and method whereby the uniformity of the silylating agent throughout the reaction chamber and primarily at the surface of the wafer is significantly improved to provide a significant improvement in the line width uniformity. In accordance with a first embodiment of the invention, this is accomplished by stagnant silylation wherein the silylating agent is introduced into the reaction chamber and the reaction chamber is then sealed during the entire time required to carry out the silylation. The advantage of this approach is optimum uniformity since once equilibrium has been reached, there is no net change of flow or pressure of the silylating agent across the wafer. Another advantage is reduction in the total consumption of the silylating and carrier gases. In accordance with a second embodiment of the invention, the silylating agent flows laminarly across the surface of the wafer to provide uniformity of the silylating agent at the wafer surface. This is accomplished by introducing the silylating agent and carrier gas along one side of the wafer and uniformly flowing the gases across the entire wafer due to a pressure differential across the wafer from the location(s) of gas entry into the reaction chamber to the location(s) of gas exit from the reaction chamber, for example.
摘要翻译：一种系统和方法，其中遍及反应室和主要在晶片表面的甲硅烷化剂的均匀性得到显着改善，以提供线宽均匀性的显着改进。根据本发明的第一个实施方案，这是通过停滞的甲硅烷基化来完成的，其中将甲硅烷基化剂引入反应室，然后在进行甲硅烷基化所需的整个时间内密封反应室。这种方法的优点是最佳均匀性，因为一旦达到平衡，晶片上的甲硅烷基化剂的流动或压力没有净变化。另一个优点是减少了甲硅烷基化和载气的总消耗。根据本发明的第二个实施方案，甲硅烷基化剂层流地流过晶片的表面，以提供硅烷化剂在晶片表面的均匀性。这是通过沿着晶片的一侧引入甲硅烷基化剂和载体气体并且由于从进入反应室的气体的位置跨过晶片的压差而将气体均匀地流过整个晶片来实现的（例如）从反应室排出的气体。

IPRDB

热门服务

关于我们

友情链接

联系方式