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    • 5. 发明授权
    • Structure of sequencers that perform initial and periodic calibrations in a memory system
    • 在存储器系统中执行初始和定期校准的顺控程序的结构
    • US07305517B2
    • 2007-12-04
    • US10988290
    • 2004-11-12
    • Mark David BellowsRyan Abel Heckendorf
    • Mark David BellowsRyan Abel Heckendorf
    • G06F13/00
    • G06F13/1684G06F13/1689
    • A structure of sequencers, a method, and a computer program are provided for performing initial and periodic calibrations in an XDR™ memory system. A memory controller that performs these calibrations is divided into identical, independent halves, with each half containing a Current/Impedance Calibration (i/z Cal) sequencer and six Bank sequencers. The i/z Cal sequencer contains three pathways that perform the XIO current and termination calibrations, and the XDR™ DRAM current and termination impedance calibrations. Each Bank sequencer contains normal read and write operation pathways that are reused to accomplish receive setup, receive hold, transmit setup, transmit hold, XIO receive, and XIO transmit timing calibrations. Initial and periodic calibrations are necessary to ensure the precise transfer of data between the XIOs and the XDR™ DRAMs.
    • 提供了定序器的结构,方法和计算机程序,用于在XDR TM存储器系统中执行初始和周期性校准。 执行这些校准的存储器控​​制器被分成相同的独立半部,每个半部分包含电流/阻抗校准(i / z Cal)定序器和六个音序器。 i / z Cal序列器包含执行XIO电流和终止校准的三个路径,以及XDR(TM)DRAM电流和终端阻抗校准。 每个Bank序列器都包含正常的读写操作路径,用于实现接收建立,接收保持,发送设置,发送保持,XIO接收和XIO发送定时校准。 必须进行初始和周期性校准,以确保XIO和XDR(TM)DRAM之间数据的精确传输。
    • 7. 发明授权
    • Structure of sequencers that perform initial and periodic calibrations in a memory system
    • 在存储器系统中执行初始和定期校准的顺控程序的结构
    • US07558908B2
    • 2009-07-07
    • US11860209
    • 2007-09-24
    • Mark David BellowsRyan Abel Heckendorf
    • Mark David BellowsRyan Abel Heckendorf
    • G06F13/00
    • G06F13/1684G06F13/1689
    • A structure of sequencers, a method, and a computer program are provided for performing initial and periodic calibrations in an XDR™ memory system. A memory controller that performs these calibrations is divided into identical, independent halves, with each half containing a Current/Impedance Calibration (i/z Cal) sequencer and six Bank sequencers. The i/z Cal sequencer contains three pathways that perform the XIO current and termination calibrations, and the XDR™ DRAM current and termination impedance calibrations. Each Bank sequencer contains normal read and write operation pathways that are reused to accomplish receive setup, receive hold, transmit setup, transmit hold, XIO receive, and XIO transmit timing calibrations. Initial and periodic calibrations are necessary to ensure the precise transfer of data between the XIOs and the XDR™ DRAMs.
    • 提供了定序器的结构,方法和计算机程序,用于在XDR TM存储器系统中执行初始和周期性校准。 执行这些校准的存储器控​​制器被分成相同的独立半部,每个半部分包含电流/阻抗校准(i / z Cal)定序器和六个音序器。 i / z Cal序列器包含执行XIO电流和终止校准的三个路径,以及XDR(TM)DRAM电流和终端阻抗校准。 每个Bank序列器都包含正常的读写操作路径,用于实现接收建立,接收保持,发送设置,发送保持,XIO接收和XIO发送定时校准。 必须进行初始和周期性校准,以确保XIO和XDR(TM)DRAM之间数据的精确传输。