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1. 发明授权

US4446454A Home security system 失效
标题翻译：家庭安全系统
公开(公告)号：US4446454A
公开(公告)日：1984-05-01
申请号：US226626
申请日：1981-01-21
申请人： Ronald E. Pyle
发明人： Ronald E. Pyle
IPC分类号： G08B13/00 , G08B19/00 , G08B25/00 , G08B1/08 , H04Q1/30
CPC分类号： G08B13/00 , G08B19/00 , G08B25/009
摘要： A security system for alerting an intrusion disturbance at an entry point to a residence, or alerting as to other emergency conditions, such as fire is disclosed. In the system, a primary monitoring unit having intrusion detection sensors for placement at entry points to a residence produces an audible acoustic alarm signal upon the occurrence of an intrusion disturbance. The acoustic signal is detected by a secondary monitoring unit which in response transmits an electronic signal through the wiring in the residence. A central monitoring unit receives the transmitted electronic signal and activates an alerting alarm and automatic telephone dialer. The system may further include a portable alarm switch for transmitting a coded radio frequency signal to the central monitoring unit to provide remote activation of an alerting device.
摘要翻译：公开了一种安全系统，用于在进入住宅的入境点处警报入侵扰动，或者提醒其他紧急情况，例如火灾。在系统中，具有入侵检测传感器的主要监视单元用于在入口处放置到居住地，在发生入侵扰动时产生可听见的声音报警信号。声信号由辅助监视单元检测，二次监视单元响应于通过住宅中的布线发送电子信号。中央监控单元接收发送的电子信号并激活报警报警和自动电话拨号器。该系统还可以包括便携式报警开关，用于将编码的射频信号发送到中央监控单元以提供警报设备的远程激活。

2. 发明授权

US5264070A Method of growth-orientation of a crystal on a device using an oriented seed layer 失效
标题翻译：使用定向种子层的器件上的晶体的生长取向的方法
公开(公告)号：US5264070A
公开(公告)日：1993-11-23
申请号：US594498
申请日：1990-10-09
申请人： Andrew J. Urquhart , Ronald E. Pyle , Chi-Ming Hong
发明人： Andrew J. Urquhart , Ronald E. Pyle , Chi-Ming Hong
IPC分类号： C30B25/18 , H01L21/20 , C30B25/00
CPC分类号： C30B25/18 , H01L21/02422 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02532 , H01L21/02595 , H01L21/02639
摘要： Growth-orientation of a crystal on a semiconductor device is achieved by using an oriented seed layer to grow a monocrystalline layer of silicon on an oxide. The oriented seed layer is provided by a regimented layer of silicon precipitates, which are deposited onto a surface of the oxide in a conventional aluminum-silicon deposition process. A film of silicon is deposited onto the oriented seed layer to grow a monocrystalline layer of silicon. The monocrystalline layer of silicon is further coated with an oxide, and a further seed layer is deposited. In this manner, a plurality of monocrystalline layers of silicon can be deposited on and between insulating layers of oxide. The method can be used for the manufacture of silicon-on-oxide transistors, having a low density of crystalline defects.
摘要翻译：半导体器件上的晶体的生长取向通过使用定向种子层在氧化物上生长单晶硅层来实现。取向种子层由硅沉淀物的沉积层提供，其沉积在常规铝硅沉积工艺中的氧化物的表面上。将硅膜沉积到取向的种子层上以生长硅的单晶层。硅的单晶层进一步涂覆有氧化物，并沉积另外的种子层。以这种方式，多个单晶硅层可以沉积在氧化物的绝缘层之间和之间。该方法可用于制造具有低密度晶体缺陷的硅 - 氧化物晶体管。

3. 发明授权

US5236852A Method for contacting a semiconductor device 失效
标题翻译：接触半导体器件的方法
公开(公告)号：US5236852A
公开(公告)日：1993-08-17
申请号：US950333
申请日：1992-09-24
申请人： Michael Cherniawski , Jeffrey M. Barker , Ronald E. Pyle , Vidya S. Kaushik
发明人： Michael Cherniawski , Jeffrey M. Barker , Ronald E. Pyle , Vidya S. Kaushik
IPC分类号： H01L21/265 , H01L21/28 , H01L21/768 , H01L23/485
CPC分类号： H01L23/485 , H01L21/76838 , H01L2924/0002 , Y10S148/019
摘要： An electrical contact (46) to a phosphorous doped polysilicon gate electrode (18) is formed by preventing arsenic, from a source and drain implant, from doping a portion (22) of the polysilicon gate electrode (18). A photoresist mask (20) covers a portion (22) of the polysilicon gate electrode (18) during the implant, thus preventing it from being doped. An electrical contact (46) is then formed to the masked portion (22) of the polysilicon gate electrode (18).

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