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    • 1. 发明授权
    • Metal shield for integrated circuits
    • 集成电路金属屏蔽
    • US08994152B2
    • 2015-03-31
    • US13415407
    • 2012-03-08
    • Roger CarrollGreg Nelson
    • Roger CarrollGreg Nelson
    • H01L23/552H01L23/522
    • H01L23/552H01L23/5225H01L2924/0002H01L2924/00
    • A metal shield structure is provided for an integrated circuit (IC) having at least a first metal contact coupled to a fixed potential and a second metal contact. A first passivation layer is located between the first and second metal contacts and on a first portion of the first metal contact and a first portion of the second metal contact, leaving a second portion of the first metal contact and a second portion of the second metal contact uncovered by the first passivation layer. A metal shield layer is provided on the second portion of the first metal contact and on the first passivation layer, and a second passivation layer is formed on the metal shield layer.
    • 为集成电路(IC)提供金属屏蔽结构,该集成电路至少具有耦合到固定电位的第一金属触点和第二金属触点。 第一钝化层位于第一和第二金属触点之间,并且位于第一金属触点的第一部分和第二金属触点的第一部分上,留下第一金属触点的第二部分和第二金属的第二部分 接触不被第一钝化层覆盖。 在第一金属触点的第二部分和第一钝化层上设置金属屏蔽层,在金属屏蔽层上形成第二钝化层。
    • 4. 发明申请
    • EDGE BEAD REMOVAL FOR POLYBENZOXAZOLE (PBO)
    • 用于聚苯并唑(PBO)的边缘珠去除
    • US20120241920A1
    • 2012-09-27
    • US13425748
    • 2012-03-21
    • Roger Carroll
    • Roger Carroll
    • H01L29/02H01L21/306
    • H01L21/02087H01L21/31133
    • A method of cleaning polybenzoxazole (PBO) from a semiconductor wafer coated with PBO includes baking a PBO-coated semiconductor wafer, and then exposing the semiconductor wafer with ultraviolet light through a patterned mask to soften selected regions of PBO on the semiconductor wafer. PBO is then dissolved in an edge region of the semiconductor wafer with solvent. After dissolving PBO in the edge region, the semiconductor wafer is chemically developed to dissolve the elected softened regions of PBO on the semiconductor wafer and to dissolve PBO remaining in the edge region of the semiconductor wafer that was left behind after the step of dissolving the PBO in the edge region with the solvent.
    • 从涂布有PBO的半导体晶片清洗聚苯并恶唑(PBO)的方法包括烘烤PBO涂覆的半导体晶片,然后通过图案化掩模将紫外光暴露于半导体晶片,以软化半导体晶片上的PBO的选定区域。 然后用溶剂将PBO溶解在半导体晶片的边缘区域中。 将PBO溶解在边缘区域后,半导体晶片经化学显影以溶解半导体晶片上的选定的PBO软化区域,并溶解剩余的半导体晶片边缘区域中的PBO, 在边缘区域与溶剂。
    • 7. 发明授权
    • Low resistance, thermally stable electrode structure for
electroluminescent displays
    • 用于电致发光显示器的低电阻,热稳定的电极结构
    • US5445711A
    • 1995-08-29
    • US250969
    • 1994-05-31
    • William J. TanskiRoger CarrollEmilio J. Branciforte
    • William J. TanskiRoger CarrollEmilio J. Branciforte
    • H05B33/22H05B33/12H05B33/26H05B33/28B44C1/22C23F1/02
    • H05B33/28
    • An electroluminescent display includes a transparent electrode (4) and a metal assist structure (6) formed over a portion of the transparent electrode (6) such that the metal assist structure (6) is in electrical contact with the transparent electrode (4). The metal assist structure (6) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12). The first and second refractory metal layers (10, 14) are capable of protecting the primary conductor layer (12) from oxidation when the electroluminescent display is annealed to activate a phosphor layer (18). In an alternate embodiment, an electroluminescent display includes a substrate (2) and a metal electrode (22) formed on the substrate (2). The metal electrode (22) includes a first refractory metal layer (10), a primary conductor layer (12) formed on the first refractory metal layer (10), and a second refractory metal layer (14) formed on the primary conductor layer (12).
    • 电致发光显示器包括在透明电极(6)的一部分上形成的透明电极(4)和金属辅助结构(6),使得金属辅助结构(6)与透明电极(4)电接触。 金属辅助结构(6)包括第一耐火金属层(10),形成在第一耐火金属层(10)上的主导体层(12)和形成在主导体层上的第二难熔金属层(14) (12)。 当电致发光显示器被退火以激活磷光体层(18)时,第一和第二难熔金属层(10,14)能够保护主导体层(12)不被氧化。 在替代实施例中,电致发光显示器包括基板(2)和形成在基板(2)上的金属电极(22)。 金属电极(22)包括形成在第一难熔金属层(10)上的第一耐火金属层(10),主导体层(12)和形成在主导体层(10)上的第二耐火金属层(14) 12)。
    • 10. 发明申请
    • FREQUENCY DOMAIN MULTIPLEX OPTICAL TRANSMISSION
    • 频域多路光传输
    • US20170019183A1
    • 2017-01-19
    • US15281986
    • 2016-09-30
    • James HARLEYRoger CARROLLShahab OVEIS GHARANKim B. ROBERTS
    • James HARLEYRoger CARROLLShahab OVEIS GHARANKim B. ROBERTS
    • H04B10/548H04J99/00H04B10/50H04B10/40H04B10/61
    • H04B10/516H04B10/505H04B10/548H04B10/616
    • A transmitter comprises a complex mixer to generate a single I analog drive signal and a single Q analog drive signal, and a single multi-dimensional optical modulator configured to modulate an optical carrier light using the single I analog drive signal and the single Q analog drive signal to produce a modulated optical signal for transmission. Alternatively, a transmitter comprises a complex mixer to generate two I analog drive signals and two Q analog drive signals, and a single multi-dimensional multiple-electrode optical modulator configured to modulate an optical carrier light using the analog drive signals to produce a modulated optical signal for transmission. In both transmitters, the optical carrier light is produced by a single laser, and frequency components of the first data signal are located in a different portion of a spectrum of the modulated optical signal than frequency components of the second data signal.
    • 发射机包括复合混频器以产生单个I模拟驱动信号和单个Q模拟驱动信号,并且单个多维光学调制器被配置为使用单个I模拟驱动信号和单个Q模拟驱动器来调制光载波 信号以产生用于传输的调制光信号。 或者,发射机包括复合混频器以产生两个I模拟驱动信号和两个Q模拟驱动信号,以及单个多维多电极光调制器,其被配置为使用模拟驱动信号来调制光载波光以产生调制光 传输信号。 在两个发射机中,光载波光由单个激光器产生,并且第一数据信号的频率分量位于调制光信号的频谱的不同部分,而不是第二数据信号的频率分量。