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    • 1. 发明授权
    • Cemented tungsten carbide substrates having adherent diamond films
coated thereon
    • 在其上涂覆有粘附金刚石膜的硬质碳化钨基材
    • US5567526A
    • 1996-10-22
    • US542200
    • 1995-10-11
    • Michael G. PetersRobert H. Cummings
    • Michael G. PetersRobert H. Cummings
    • C01B32/949C23C16/02C23C16/26C23C16/27C30B29/04B32B15/04
    • C23C16/27C23C16/0227Y10S427/103Y10T428/26Y10T428/30Y10T428/31678
    • A cemented tungsten carbide substrate is prepared for coating with a layer of diamond film by subjecting the substrate surface to be coated to a process which first removes a small amount of the tungsten carbide at the surface of the substrate while leaving the cobalt binder substantially intact. Murakami's reagent is presently preferred. The substrate is then subjected to a process which removes any residue remaining on the surface as a result of the performance of the process which removes the tungsten carbide. A solution of sulfuric acid and hydrogen peroxide is presently preferred. A diamond coated cemented tungsten carbide tool is formed using an unpolished substrate, which may be prepared by etching as described above or by etching in nitric acid prior to diamond film deposition. Deposition of a substantially continuous diamond film may be accomplished by reactive vapor deposition, thermally assisted (hot filament) CVD, plasma-enhanced CVD, or other techniques.
    • 通过使衬底表面经受涂覆以首先在基材表面除去少量的碳化钨,同时使钴粘合剂基本上保持完整的方法,制备用于涂覆金刚石膜的胶结碳化钨衬底。 村上的试剂目前是优选的。 然后进行基板的除去碳化钨的工艺的结果,除去残留在表面上的残留物的工艺。 目前优选硫酸和过氧化氢的溶液。 使用未抛光的基底形成金刚石涂层的胶结碳化钨工具,其可以通过如上所述的蚀刻或通过在金刚石膜沉积之前在硝酸中蚀刻来制备。 基本上连续的金刚石膜的沉积可以通过反应性气相沉积,热辅助(热丝)CVD,等离子体增强CVD或其它技术来实现。