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    • 4. 发明授权
    • Memory partitioning
    • 内存分区
    • US5553023A
    • 1996-09-03
    • US421321
    • 1995-04-13
    • Winnie K. W. LauRichard Malinowski
    • Winnie K. W. LauRichard Malinowski
    • G06F12/12G11C8/12G11C29/00G11C13/00
    • G11C29/88G06F12/125G11C8/12G06F12/126
    • This invention relates to an improved memory storage system which allows selective ranges of memory locations, which can also be referred to as virtual memory banks, to be enabled and disabled. The ranges of memory locations can be disabled to avoid refreshing unused memory location and to eliminate faulty memory locations. Also, the ranges of memory locations can be treated as blocks or banks of memory regardless of the physical chips used to store the data. In other words, if a memory bank has a capacity of 16 MB, the range of memory locations may be a portion of the total capacity of this memory bank, for example 8 MB or 4 MB, and the remainder of the memory bank can be unaffected or be the subject of another range of memory locations. In a preferred embodiment, the ranges of memory locations is at least 2 MB in size.
    • 本发明涉及一种改进的存储器存储系统,其允许选择性地存储位置(也可以称为虚拟存储体)被启用和禁用。 可以禁用存储器位置的范围,以避免刷新未使用的存储器位置并消除故障存储器位置。 而且,无论用于存储数据的物理芯片如何,存储器位置的范围可被视为存储器块或存储体。 换句话说,如果存储体具有16MB的容量,则存储器位置的范围可以是该存储体的总容量的一部分,例如8MB或4MB,并且存储体的其余部分可以是 不受影响或成为另一范围记忆位置的主题。 在优选实施例中,存储器位置的范围大小至少为2MB。
    • 6. 发明授权
    • Method and apparatus for controlling data transfer between a synchronous
DRAM-type memory and a system bus
    • 用于控制同步DRAM型存储器和系统总线之间的数据传输的方法和装置
    • US06148380A
    • 2000-11-14
    • US735433
    • 1997-01-02
    • James M. DoddRichard Malinowski
    • James M. DoddRichard Malinowski
    • G06F13/16G06F13/00
    • G06F13/1631
    • An interface and method for a synchronous DRAM (syncDRAM) memory are provided that improve performance. The read operation in a syncDRAM is significantly sped up by eliminating the step of opening a new page of data in a SyncDRAM using a speculative read method. This provides the ability to open a page of information in the SyncDRAM with a command generator in response to a data request. Speculative read logic is also included to continue reading from the page with an invalid address until a second read request occurs. Thus, in the event that a subsequent read request occurs that requests data located on the same page as the prior request, the data can be indexed and read from a location on that page without having to first assert the SCS# and SCAS#. This frequently removes the step of opening a page from the read process and, over time, can significantly speed up the overall SyncDRAM reads in a computer system.
    • 提供了用于提高性能的同步DRAM(syncDRAM)存储器的接口和方法。 通过消除使用推测读取方法在SyncDRAM中打开新页面的数据的步骤,syncDRAM中的读取操作显着加快。 这提供了使用命令生成器在SyncDRAM中打开一页信息以响应数据请求的能力。 还包括推测读取逻辑,以继续从具有无效地址的页面读取,直到发生第二个读取请求。 因此,在发生请求与先前请求相同的页面上的数据的后续读取请求的情况下,可以从该页面上的位置索引和读取数据,而无需首先断言SCS#和SCAS#。 这经常删除从读取过程打开页面的步骤,并且随着时间的推移,可以显着加快计算机系统中的整体SyncDRAM读取速度。