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    • 2. 发明授权
    • Silicon solar cell and 350 nanometer cut-on filter for use therein
    • 硅太阳能电池和350纳米切割式过滤器用于其中
    • US4293732A
    • 1981-10-06
    • US51379
    • 1979-06-25
    • James D. RancourtRichard I. Seddon
    • James D. RancourtRichard I. Seddon
    • H01L31/0216H01L31/06
    • C03C17/3417H01L31/02168Y02E10/50
    • Solar cell construction having a body formed essentially of silicon and having a surface with a photovoltaic junction applied thereon. An anti-reflection coating is formed on the surface. A transparent protective cover is provided. A cut-on filter is carried by the cover for reflecting solar energy below approximately 350 nanometers. A layer of substantially transparent cement is used for securing the protective cover to the body so that it overlies the junction and the anti-reflection coating. The cut-on filter includes a stack of high and low index layers for reflecting solar energy in the ultra-violet region of 350 nanometers and below and also may include at least one additional layer of material of absorbing ultraviolet energy below 350 nanometers which passes through the high and low index layers above it.
    • 太阳能电池结构具有基本上由硅形成并且具有其上施加有光伏结的表面的主体。 在表面上形成防反射涂层。 提供透明保护罩。 封闭式过滤器由盖子承载,用于将太阳能反射到大约350纳米以下。 一层基本上透明的水泥用于将保护盖固定到主体上,使其覆盖在接合处和防反射涂层之间。 切入式过滤器包括用于在350纳米及以下的紫外区域反射太阳能的高折射率层和低折射率层的堆叠,并且还可以包括至少一个额外的吸收低于350纳米的紫外线能量的材料层,其通过 其上方的高和低折射率层。
    • 3. 发明授权
    • Coating apparatus
    • 涂装设备
    • US4276855A
    • 1981-07-07
    • US35396
    • 1979-05-02
    • Richard I. Seddon
    • Richard I. Seddon
    • C23C14/24C23C14/50C23C14/56C23C13/08
    • C23C14/564C23C14/50
    • A coating apparatus having a housing and a vacuum pump for establishing a vacuum in the housing. First and second rotors are disposed within the housing for rotation about axes which are offset from the horizontal by less than 45.degree. whereby the upper portions of the rotors are in relatively close proximity to each other and the lower portions of the rotors are spaced apart from each other. A source of coating material is disposed between the rotors generally in line with the axis of rotation of the rotors. The rotors have substrate carrying surfaces having longitudinal dimensions extending generally parallel to the axis of rotation which is such so that an imaginary vertical line extending downwardly from the top portion of the substrate carrying surface from the inner extremity of the same clears the outermost margin of the lower portion of the substrate carrying surfaces of the rotor whereby debris and the like falling by force of gravity from the top portion of the rotor will clear the lower portion of the rotor.
    • 一种具有壳体和用于在壳体中建立真空的真空泵的涂覆装置。 第一转子和第二转子设置在壳体内,用于围绕与水平偏移小于45度的轴旋转,由此转子的上部彼此相对靠近并且转子的下部与 彼此。 涂层材料的源头设置在转子之间,大体上与转子的旋转轴线一致。 转子具有基本承载表面,其具有大体上平行于旋转轴线延伸的纵向尺寸,使得从基板承载表面的顶部向下延伸的从该基板承载表面的顶部向下延伸的假想垂直线将第一边缘的最外边缘清除 转子的承载表面的底部的下部,由于来自转子的顶部的力的重力引起的碎屑等将使转子的下部部分清除。
    • 6. 发明授权
    • System and method for vacuum deposition of thin films
    • 真空沉积薄膜的系统和方法
    • US4882198A
    • 1989-11-21
    • US202830
    • 1988-06-03
    • Michael D. TempleRichard I. SeddonKim L. Johnson
    • Michael D. TempleRichard I. SeddonKim L. Johnson
    • C23C14/32
    • C23C14/32
    • A substrate holder is mounted within the vacuum chamber for carrying at least one substrate; an electrically conductive crucible is positioned within said vacuum chamber and is electrically insulated therefrom but has a low electrical resistance connection therebetween. The crucible is adapted to contain a preselected material for evaporation onto a substrate on the substrate holder. A high voltage electron beam source is positioned within said vacuum chamber in the vicinity of said crucible and includes a high voltage electron gun and a deflection magnet system arranged for bending electrons from said gun into said crucible for evaporating the preselected material therein, the magnet system forms a magnet field of prearranged characteristics in the region above said crucible. A low voltage, high current plasma source, including a separate plasma generating chamber is positioned relative to said vacuum chamber to produce an intense first plasma of a selected activation gas species in said plasma generating chamber for injection into said vacuum chamber. The plasma source is positioned at any convenient location relative to the crucible and the electron beam source and is electrically interconnected with the crucible for current flow therebetween. The plasma source fills the vacuum chamber with a generally distributed plasma. The distributed plasma coacts with the magnetic field above said crucible and evaporant material leaving the crucible to form an intense second plasma in the region above said crucible, thereby activating the evaporant material passing through the region toward the substrate to produce a vacuum deposited thin film having improved thin film characteristics.
    • 衬底保持器安装在真空室内以承载至少一个衬底; 导电坩埚定位在所述真空室内并与之电绝缘,但是在它们之间具有低电阻连接。 坩埚适于容纳用于蒸发到衬底保持器上的衬底上的预选材料。 高电压电子束源位于所述坩埚附近的所述真空室内,并且包括高压电子枪和偏转磁体系统,其布置成用于将电子从所述枪弯曲到所述坩埚中,用于蒸发其中的预选材料,磁体系统 在所述坩埚上方的区域中形成预定特性的磁场。 包括单独的等离子体产生室的低电压,高电流等离子体源相对于所述真空室定位,以在所述等离子体发生室中产生用于注入所述真空室的所选激活气体种类的强烈的第一等离子体。 等离子体源位于相对于坩埚和电子束源的任何方便的位置,并且与坩埚电互连,用于其间的电流。 等离子体源以大致分布的等离子体填充真空室。 分布式等离子体与坩埚上方的磁场和离开坩埚的蒸发材料共同作用,在坩埚上方的区域中形成强烈的第二等离子体,从而使通过该区域的蒸发材料活动到衬底,以产生真空沉积的薄膜, 改善薄膜特性。
    • 8. 发明授权
    • System and method for vacuum deposition of thin films
    • 真空沉积薄膜的系统和方法
    • US4777908A
    • 1988-10-18
    • US935292
    • 1986-11-26
    • Michael D. TempleRichard I. SeddonKim L. Johnson
    • Michael D. TempleRichard I. SeddonKim L. Johnson
    • C23C14/30C23C14/32C23C14/24C23C16/50
    • C23C14/32
    • A substrate holder is mounted within the vacuum chamber for carrying at least one substrate; an electrically conductive crucible is positioned within said vacuum chamber and is electrically insulated therefrom but has a low electrical resistance connection therebetween. The crucible is adapted to contain a preselected material for evaporation onto a substrate on the substrate holder. A high voltage electron beam source is positioned within said vacuum chamber in the vicinity of said crucible and includes a high voltage electron gun and a deflection magnet system arranged for bending electrons from said gun into said crucible for evaporating the preselected material therein, the magnet system forms a magnet field of prearranged characteristics in the region above said crucible. A low voltage, high current plasma source, including a separate plasma generating chamber is positioned relative to said vacuum chamber to produce an intense first plasma of a selected activation gas species in said plasma generating chamber for injection into said vacuum chamber. The plasma source is positioned at any convenient location relative to the crucible and the electron beam source and is electrically interconnected with the crucible for current flow therebetween. The plasma source fills the vacuum chamber with a generally distributed plasma. The distributed plasma coacts with the magnetic field above said crucible and evaporant material leaving the crucible to form an intense second plasma in the region above said crucible, thereby activating the evaporant material passing through the region toward the substrate to produce a vacuum deposited thin film having improved thin film characteristics.
    • 衬底保持器安装在真空室内以承载至少一个衬底; 导电坩埚定位在所述真空室内并与之电绝缘,但是在它们之间具有低电阻连接。 坩埚适于容纳用于蒸发到衬底保持器上的衬底上的预选材料。 高电压电子束源位于所述坩埚附近的所述真空室内,并且包括高压电子枪和偏转磁体系统,其布置成用于将电子从所述枪弯曲到所述坩埚中,用于蒸发其中的预选材料,磁体系统 在所述坩埚上方的区域中形成预定特性的磁场。 包括单独的等离子体产生室的低电压,高电流等离子体源相对于所述真空室定位,以在所述等离子体发生室中产生用于注入所述真空室的所选激活气体种类的强烈的第一等离子体。 等离子体源位于相对于坩埚和电子束源的任何方便的位置,并且与坩埚电互连,用于其间的电流。 等离子体源以大致分布的等离子体填充真空室。 分布式等离子体与坩埚上方的磁场和离开坩埚的蒸发材料共同作用,在坩埚上方的区域中形成强烈的第二等离子体,从而使通过该区域的蒸发材料活动到衬底,以产生真空沉积的薄膜, 改善薄膜特性。