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1. 发明授权

US06172858B2 Thin film head 有权
标题翻译：薄膜头
公开(公告)号：US06172858B2
公开(公告)日：2001-01-09
申请号：US09479651
申请日：2000-01-07
申请人： Hiroaki Yoda , Yuichi Ohsawa , Kohichi Tateyama , Reiko Kondoh , Toshihiko Ohta , Junichi Akiyama , Hitoshi Iwasaki
发明人： Hiroaki Yoda , Yuichi Ohsawa , Kohichi Tateyama , Reiko Kondoh , Toshihiko Ohta , Junichi Akiyama , Hitoshi Iwasaki
IPC分类号： G11B5127
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/1278 , G11B5/3163 , G11B5/3903 , G11B5/3912 , G11B5/3919 , G11B5/3932 , G11B5/3967 , G11B5/399 , G11B2005/0016 , G11B2005/0018 , G11B2005/3996 , Y10T29/49025
摘要： The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films, a nonmagnetic film sandwiched between the magnetic films, and leads connected to the magnetoresistance effect element wherein the width of one of the magnetic films, which essentially responds to a signal magnetic field, is not more than a distance between leads. The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films and a nonmagnetic film sandwiched between the magnetic films, which makes use of a change in magnetic resistance caused by spin-dependent scattering, wherein at least a portion of one magnetic films, which essentially respond to a signal magnetic field extends in a direction same as that of the signal magnetic field.
摘要翻译：本发明提供了一种具有磁阻效应元件的薄膜头，该磁阻效应元件包括至少两个磁性膜，夹在磁性膜之间的非磁性膜和连接到磁阻效应元件的引线，其中一个磁性膜的宽度基本上响应信号磁场，不超过引线之间的距离。本发明提供了具有磁阻效应元件的薄膜头，该磁阻效应元件包括至少两个磁性膜和夹在磁性膜之间的非磁性膜，其利用由自旋依赖性散射引起的磁阻的变化，其中至少一个基本上响应于信号磁场的一个磁性膜的部分在与信号磁场的方向相同的方向上延伸。

2. 发明授权

US6157525A Magnetic head 失效
标题翻译：磁头
公开(公告)号：US6157525A
公开(公告)日：2000-12-05
申请号：US340717
申请日：1999-06-29
申请人： Hitoshi Iwasaki , Reiko Kondoh , Hiroaki Yoda , Yuichi Ohsawa , Yuzo Kamiguchi , Susumu Hashimoto
发明人： Hitoshi Iwasaki , Reiko Kondoh , Hiroaki Yoda , Yuichi Ohsawa , Yuzo Kamiguchi , Susumu Hashimoto
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996
摘要： A magnetoresistive head includes a magnetoresistive effect element including a magnetoresistive film, which has a first ferromagnetic layer and a second ferromagnetic layer separated by a nonmagnetic layer. A magnetization direction of the first ferromagnetic layer is perpendicular to a magnetization direction of the second ferromagnetic layer when a signal magnetic field is zero. A pair of bias layers provide magnetic bias, and a top surface of each of the pair of bias layers faces a lower surface of each edge region of the magnetoresistive film. A pair of lead electrodes produce a current flow through the magnetoresistive film, and each of the pair of lead electrodes is disposed on or above the magnetoresistive film.
摘要翻译：磁阻头包括具有磁阻膜的磁阻效应元件，该磁阻效应元件具有由非磁性层分离的第一铁磁层和第二铁磁层。当信号磁场为零时，第一铁磁层的磁化方向垂直于第二铁磁层的磁化方向。一对偏置层提供磁偏置，并且该对偏压层中的每一个的顶表面面对磁阻膜的每个边缘区域的下表面。一对引线电极产生通过磁阻膜的电流，并且一对引线电极中的每一个设置在磁阻膜上或上方。

3. 发明授权

US5896251A Magnetoresistance effect head with conductor film pair and magnetic field proving film pair disposed between substrate and magnetoresistance effect film 失效
标题翻译：具有导体膜对的磁阻效应头和设置在衬底和磁阻效应膜之间的磁场证明膜对
公开(公告)号：US5896251A
公开(公告)日：1999-04-20
申请号：US577075
申请日：1995-12-22
申请人： Yuichi Ohsawa , Hiroaki Yoda , Reiko Kondoh
发明人： Yuichi Ohsawa , Hiroaki Yoda , Reiko Kondoh
IPC分类号： G11B5/31 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3932
摘要： A magnetoresistance effect head comprises a magnetoresistance effect element portion including a magnetoresistance effect film having a magnetic field response portion, a magnetic field providing film for providing the magnetoresistance effect film with a bias magnetic field, and a conductor film for supplying a current to the magnetoresistance effect film, wherein the magnetoresistance effect element portion has a laminate structure portion being composed of at least the conductor film, the magnetic field providing film, and the magnetoresistance effect film layered in this order at other than the magnetic field response portion. The magnetoresistance effect head is obtained by patterning a laminate film composed of a conductor film and a magnetic field providing film corresponding to a lead shape, forming an MR film, and patterning the MR film corresponding to a lead shape and the shape of a magnetic field response portion. Alternatively, a magnetic field providing film and a conductor film are layered in the order in a passive region other than the magnetic field response portion, forming a laminate film such that the magnetic field providing film is exposed at surface of the edge portion on the magnetic field response portion side. The MR film is formed on almost only the magnetic field response portion so that the MR film overlaps with the exposed portion of the magnetic field providing film.
摘要翻译：磁阻效应头包括具有磁场响应部分的磁阻效应膜的磁阻效应元件部分，用于提供具有偏磁场的磁阻效应膜的磁场提供膜，以及用于向磁阻提供电流的导体膜其中所述磁阻效应元件部分具有至少由所述导体膜，所述磁场提供膜和所述磁阻效应膜构成的层叠结构部分，所述层叠结构部分按所述顺序层叠在所述磁场响应部以外。磁阻效应头是通过对由导体膜构成的叠层膜和与引线形状相对应的磁场提供膜构成的MR膜进行构图，并且对与引线形状对应的MR膜和磁场的形状响应部分。或者，磁场提供膜和导体膜在除磁场响应部以外的无源区域中依次层叠，形成层叠膜，使得磁场提供膜在磁性边缘部分的表面露出场响应部分侧。 MR膜几乎仅形成在磁场响应部分上，使得MR膜与磁场提供膜的暴露部分重叠。

4. 发明授权

US5828525A Differential detection magnetoresistance head 失效
标题翻译：差分检测磁阻头
公开(公告)号：US5828525A
公开(公告)日：1998-10-27
申请号：US401489
申请日：1995-03-10
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
IPC分类号： G11B5/00 , G11B5/127 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3954 , G11B2005/0029 , G11B2005/3996 , G11B5/1278
摘要： A GMR element part is formed of a laminated structure which comprises at least one pair of ferromagnetic layers and a nonmagnetic intermediate layer interposed between the pair of ferromagnetic layers. Signal magnetic field detecting ferromagnetic layers will be optionally disposed one each outside the pair of ferromagnetic layers. The GMR element part consists of a laminated structure which is provided with one pair of GMR ferromagnetic layers opposed to each other across a nonmagnetic intermediate layer or a laminated structure which is provided with one pair of GMR ferromagnetic layer opposed to each other across a nonmagnetic intermediate layer and at least one low-permeability ferromagnetic layer disposed there between through the medium of a nonmagnetic intermediate layer. The GMR element part functions as a read head for sensing the resistance which is varied when signal magnetic fields of mutual opposite directions are applied to the pair of GMR ferromagnetic layers and displaying a differential detection type output response. A granular type ferromagnetic intermediate layer will be used as the GMR element part.
摘要翻译： GMR元件部分由层叠结构形成，该叠层结构包括至少一对铁磁层和介于一对铁磁层之间的非磁性中间层。信号磁场检测铁磁层将可选地布置在一对铁磁层的外侧。 GMR元件部分由层叠结构构成，该叠层结构具有一对跨越非磁性中间层彼此相对的GMR铁磁体层或层叠结构，该层叠结构具有跨越非磁性中间体彼此相对的一对GMR铁磁层层和至少一个通过非磁性中间层的介质设置在其间的低磁导率铁磁层。 GMR元件部分用作读取头，用于感测当相互相反方向的信号磁场施加到一对GMR铁磁层并且显示差分检测型输出响应时变化的电阻。将使用粒状铁磁中间层作为GMR元件部分。

5. 发明授权

US5587026A Ferromagnetic film 失效
标题翻译：铁磁膜
公开(公告)号：US5587026A
公开(公告)日：1996-12-24
申请号：US498231
申请日：1995-07-05
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh
IPC分类号： G11B5/127 , G11B5/147 , G11B5/187 , G11B5/31 , H01F10/16 , C22C19/07
CPC分类号： G11B5/31 , H01F10/16 , G11B5/1278 , G11B5/147 , G11B5/1877 , G11B5/1878 , H01F10/265
摘要： Disclosed is a ferromagnetic film consisting of an alloy represented by a formula Co.sub.x Fe.sub.y T.sub.z, where T is an element selected from the group consisting of Ta, Ti, Zr, Hf, Mo, and W, and x, y, and z represent atomic % and satisfy 73
摘要翻译：公开了由式CoxFeyTz表示的合金构成的铁磁膜，其中T是选自Ta，Ti，Zr，Hf，Mo和W的元素，x，y和z表示原子％，满足73

6. 发明授权

US5461527A Magneto-resistive head 失效
标题翻译：磁阻头
公开(公告)号：US5461527A
公开(公告)日：1995-10-24
申请号：US340448
申请日：1994-11-14
申请人： Junichi Akiyama , Yuichi Ohsawa , Hitoshi Iwasaki , Reiko Kondoh , Kohichi Tateyama , Toshihiko Ohta , Hiroaki Yoda
发明人： Junichi Akiyama , Yuichi Ohsawa , Hitoshi Iwasaki , Reiko Kondoh , Kohichi Tateyama , Toshihiko Ohta , Hiroaki Yoda
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , G11B5/399
摘要： A member having a first and a second magnetic layer are magnetostatically coupled and laminated and the first magnetic layer formed on a magneto-resistive element, for creating the exchange coupling on the magneto-resistive element and the first magnetic layer. The member is formed by sequentially laminating a first ferromagnetic layer magnetized in a sense along the direction of the longitudinal bias of the magneto-resistive element, non-magnetic layer and second ferromagnetic layer magnetized in a direction opposite to the magnetized direction of the first ferromagnetic layer, for example.
摘要翻译：具有第一和第二磁性层的构件被静磁耦合和层叠，并且第一磁性层形成在磁阻元件上，用于在磁阻元件和第一磁性层上产生交换耦合。该构件通过沿着磁阻元件的方向磁化的第一铁磁层顺序地层叠，非磁性层和第二铁磁层沿与第一铁磁体的磁化方向相反的方向被磁化的方向层，例如。

7. 发明授权

US06368706B1 Magnetoresistance effect element 失效
公开(公告)号：US06368706B1
公开(公告)日：2002-04-09
申请号：US09111884
申请日：1998-07-08
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , Y10S428/90 , Y10T428/11 , Y10T428/1114 , Y10T428/1121 , Y10T428/12458 , Y10T428/12875 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要： The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.

8. 发明授权

US6159593A Magnetoresistance effect element 失效
公开(公告)号：US6159593A
公开(公告)日：2000-12-12
申请号：US61070
申请日：1998-04-16
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
IPC分类号： G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01F10/3268 , H01L43/08 , H01L43/10 , Y10S428/90 , Y10T428/11 , Y10T428/1114 , Y10T428/1121 , Y10T428/12458 , Y10T428/12875 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要： The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.

9. 发明授权

US6046891A Thin film head 失效
标题翻译：薄膜头
公开(公告)号：US6046891A
公开(公告)日：2000-04-04
申请号：US22120
申请日：1998-02-11
申请人： Hiroaki Yoda , Yuichi Ohsawa , Kohichi Tateyama , Reiko Kondoh , Toshihiko Ohta , Junichi Akiyama , Hitoshi Iwasaki
发明人： Hiroaki Yoda , Yuichi Ohsawa , Kohichi Tateyama , Reiko Kondoh , Toshihiko Ohta , Junichi Akiyama , Hitoshi Iwasaki
IPC分类号： G11B5/00 , G11B5/127 , G11B5/31 , G11B5/39
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/1278 , G11B5/3903 , G11B5/3912 , G11B5/3919 , G11B5/399 , G11B2005/0016 , G11B2005/0018 , G11B2005/3996 , G11B5/3163 , G11B5/3932 , G11B5/3967 , Y10T29/49025
摘要： The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films, a nonmagnetic film sandwiched between the magnetic films, and leads connected to the magnetoresistance effect element wherein the width of one of the magnetic films, which essentially responds to a signal magnetic field, is not more than a distance between leads. The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films and a nonmagnetic film sandwiched between the magnetic films, which makes use of a change in magnetic resistance caused by spin-dependent scattering, wherein at least a portion of one magnetic films, which essentially respond to a signal magnetic field, extends in a direction same as that of the signal magnetic field.
摘要翻译：本发明提供了一种具有磁阻效应元件的薄膜头，该磁阻效应元件包括至少两个磁性膜，夹在磁性膜之间的非磁性膜和连接到磁阻效应元件的引线，其中一个磁性膜的宽度基本上响应信号磁场，不超过引线之间的距离。本发明提供了具有磁阻效应元件的薄膜头，该磁阻效应元件包括至少两个磁性膜和夹在磁性膜之间的非磁性膜，其利用由自旋依赖性散射引起的磁阻的变化，其中至少一个基本上响应于信号磁场的一个磁性膜的部分在与信号磁场相同的方向上延伸。

10. 发明授权

US5991125A Magnetic head 失效
公开(公告)号：US5991125A
公开(公告)日：1999-11-23
申请号：US852127
申请日：1997-05-06
申请人： Hitoshi Iwasaki , Reiko Kondoh , Hiroaki Yoda , Yuichi Ohsawa , Yuzo Kamiguchi , Susumu Hashimoto
发明人： Hitoshi Iwasaki , Reiko Kondoh , Hiroaki Yoda , Yuichi Ohsawa , Yuzo Kamiguchi , Susumu Hashimoto
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996
摘要： A magnetoresistive head includes a magnetoresistive effect element including a magnetoresistive film, which has a first ferromagnetic layer and a second ferromagnetic layer separated by a nonmagnetic layer. A magnetization direction of the first ferromagnetic layer is perpendicular to a magnetization direction of the second ferromagnetic layer when a signal magnetic field is zero. A pair of bias layers provide magnetic bias, and a top surface of each of the pair of bias layers faces a lower surface of each edge region of the magnetoresistive film. A pair of lead electrodes produce a current flow through the magnetoresistive film, and each of the pair of lead electrodes is disposed on or above the magnetoresistive film.

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