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1. 发明授权

US06744618B2 Electrostatic chucks with flat film electrode 有权
标题翻译：带静电电极的静电吸盘
公开(公告)号：US06744618B2
公开(公告)日：2004-06-01
申请号：US09730487
申请日：2000-12-05
申请人： Ramesh Divakar , Morteza Zandi
发明人： Ramesh Divakar , Morteza Zandi
IPC分类号： H02H2300
CPC分类号： H01L21/6833 , H02N13/00 , Y10T279/23
摘要： An electrostatic chuck having an essentially flat film electrode which is essentially parallel to the chucking surface of the electrostatic chuck is fabricated by depositing a film electrode, preferably by screen printing, onto a surface of a sintered ceramic substrate. A green ceramic layer is formed or molded onto the film electrode and the resulting structure is sintered, thereby producing the electrostatic chuck.
摘要翻译：通过将薄膜电极优选通过丝网印刷沉积到烧结陶瓷基板的表面上来制造具有基本上平行于静电卡盘的夹持表面的基本平坦的薄膜电极的静电卡盘。在薄膜电极上形成或模塑生坯陶瓷层，并将所得结构烧结，从而产生静电卡盘。

2. 发明授权

US06606234B1 Electrostatic chuck and method for forming an electrostatic chuck having porous regions for fluid flow 有权
标题翻译：静电卡盘和形成具有用于流体流动的多孔区域的静电卡盘的方法
公开(公告)号：US06606234B1
公开(公告)日：2003-08-12
申请号：US09655324
申请日：2000-09-05
申请人： Ramesh Divakar
发明人： Ramesh Divakar
IPC分类号： C23C1600
CPC分类号： H01L21/6833
摘要： An electrostatic chuck includes a chuck body having a chucking surface and a back surface, an electrode within the chuck body and at least one conduit for providing fluid communication between the back surface and a chucking surface. The conduit includes a porous region which is integrated with the chuck body. During operation, the temperature of a wafer supported by the electrostatic chuck can be controlled or modified by directing a heat transfer fluid, through the porous region, to the chucking surface. The porous region prevents or minimizes plasma penetration and arcing problems. Also described are methods of fabricating an electrostatic chuck having a porous region.
摘要翻译：静电卡盘包括具有卡盘表面和后表面的卡盘主体，卡盘主体内的电极和用于在后表面和卡盘表面之间提供流体连通的至少一个导管。导管包括与卡盘体一体化的多孔区域。在操作期间，通过将传热流体通过多孔区域引导到卡盘表面，可以控制或改变由静电卡盘支撑的晶片的温度。多孔区域防止或最小化等离子体渗透和电弧问题。还描述了制造具有多孔区域的静电卡盘的方法。

3. 发明授权

US5834387A Ceramic comprising silicon carbide with controlled porosity 失效
标题翻译：陶瓷包含具有受控孔隙率的碳化硅
公开(公告)号：US5834387A
公开(公告)日：1998-11-10
申请号：US903251
申请日：1997-07-25
申请人： Ramesh Divakar , Sai-Kwing Lau
发明人： Ramesh Divakar , Sai-Kwing Lau
IPC分类号： C04B35/565 , C04B35/573 , C04B38/00 , C04B38/06 , F16C33/04 , F16C33/24 , F16J15/34 , C04B35/569 , C04B35/576
CPC分类号： C04B35/565 , C04B35/62655 , C04B35/632 , C04B35/634 , C04B35/63416 , C04B35/63424 , C04B35/63432 , C04B35/636 , C04B38/0074 , C04B38/065 , C04B38/067 , F16C33/043 , F16J15/3496 , C04B2111/00198 , C04B2235/3821 , C04B2235/383 , C04B2235/3865 , C04B2235/428 , C04B2235/48 , C04B2235/767 , C04B2235/77
摘要： Silicon carbide sintered bodies having controlled porosity in the range of about 2 to 12 vol %, in which the pores are generally spherical and about 50 to 500 microns in diameter, are prepared from raw batches containing a polymer fugitive. Sintered bodies in the form of mechanical seal members exhibit lower power consumption at low PV and, in addition, lower wear rates at high PV in comparison to commercially available silicon carbide seal members.
摘要翻译：通过含有聚合物短片的原料制备具有约2至12体积％范围内的控制孔隙率的碳化硅烧结体，其中孔通常为球形并且直径为约50至500微米。机械密封件形式的烧结体在低PV下表现出较低的功率消耗，此外，与市售的碳化硅密封件相比，高PV下的磨损率较低。

4. 发明授权

US06723274B1 High-purity low-resistivity electrostatic chucks 有权
标题翻译：高纯度低电阻率静电吸盘
公开(公告)号：US06723274B1
公开(公告)日：2004-04-20
申请号：US09458278
申请日：1999-12-09
申请人： Ramesh Divakar
发明人： Ramesh Divakar
IPC分类号： C04B35582
CPC分类号： C04B35/581 , H01L21/6833
摘要： The volume resistivity of a body consisting essentially of aluminum nitride is reduced by exposing the body to a soak temperature of at least about 1000° C. in an atmosphere deficient in nitrogen, such as an atmosphere consisting essentially of argon. The body can be, for example, a green body of aluminum nitride powder of a densified, or sintered body, such as a polycrystalline body. An electrostatic chuck has an electrode within a chuck body. A first portion of the chuck body, at a first side of the electrode, has a volume resistivity less than about 1×1013 ohm·cm at about 23° C. A second portion of the body, at a second side of the electrode, has a volume resistivity within one order of magnitude that of the first portion.
摘要翻译：基本上由氮化铝组成的体的体积电阻率通过在缺乏氮气的气氛（例如基本上由氩组成的气氛）中将体暴露于至少约1000℃的浸泡温度来降低。主体可以是例如致密化或烧结体如多晶体的氮化铝粉末的生坯体。静电吸盘在卡盘体内具有电极。在电极的第一侧处，卡盘体的第一部分在约23℃下具有小于约1×10 13欧姆·厘米的体积电阻率。在电极的第二侧处的体的第二部分具有与第一部分相同的体积电阻率在一个数量级内。

5. 发明授权

US5395807A Process for making silicon carbide with controlled porosity 失效
标题翻译：制造具有受控孔隙率的碳化硅的方法
公开(公告)号：US5395807A
公开(公告)日：1995-03-07
申请号：US65037
申请日：1993-05-25
申请人： Ramesh Divakar , Sai-Kwing Lau
发明人： Ramesh Divakar , Sai-Kwing Lau
IPC分类号： C04B35/565 , C04B35/573 , C04B38/00 , C04B38/06 , F16C33/04 , F16C33/24 , F16J15/34 , C04B35/56
CPC分类号： C04B35/565 , C04B35/62655 , C04B35/632 , C04B35/634 , C04B35/63416 , C04B35/63424 , C04B35/63432 , C04B35/636 , C04B38/0074 , C04B38/065 , C04B38/067 , F16C33/043 , F16J15/3496 , C04B2111/00198 , C04B2235/3821 , C04B2235/383 , C04B2235/3865 , C04B2235/428 , C04B2235/48 , C04B2235/767 , C04B2235/77
摘要： Silicon carbide sintered bodies having controlled porosity in the range of about 2 to 12 vol %. in which the pores are generally spherical and about 50 to 500 microns in diameter, are prepared from raw batches containing a polymer fugitive. Sintered bodies in the form of mechanical seal members exhibit lower power consumption at low PV and, in addition, lower wear rates at high PV in comparison to commercially available silicon carbide seal members.
摘要翻译：具有约2至12体积％范围内的受控孔隙率的碳化硅烧结体。其中孔通常为球形并且直径为约50至500微米，由含有聚合物短液的原料制备。机械密封件形式的烧结体在低PV下表现出较低的功率消耗，此外，与市售的碳化硅密封件相比，高PV下的磨损率较低。

6. 发明授权

US06603650B1 Electrostatic chuck susceptor and method for fabrication 有权
标题翻译：静电卡盘座及其制造方法
公开(公告)号：US06603650B1
公开(公告)日：2003-08-05
申请号：US09457968
申请日：1999-12-09
申请人： Ramesh Divakar , Morteza Zandi
发明人： Ramesh Divakar , Morteza Zandi
IPC分类号： H02H2300
CPC分类号： H01L21/6833
摘要： An electrostatic chuck, or susceptor, includes an electrode and/or heating element embedded in a ceramic body, and has an electrical contact extending from the electrode. The electrode or heating element can be fabricated, for example, from molybdenum and the chuck body from aluminum nitride. The electrical contact includes a first metal and a second metal in a composition ratio wherein essentially all of the second metal is dissolved in the first metal, thereby essentially preventing formation of intermetallic species of the first and second metals. One example of an electrical contact includes about 99.8 weight percent molybdenum and about 0.2 weight percent nickel. Alternatively, the electrode can be fabricated from a first metal and a second metal in a composition ratio wherein essentially all of the second metal is dissolved in the first metal, thereby essentially preventing formation of intermetallic species of the first and second metals. The electrical contact can be fabricated from a metal such as molybdenum, or from an alloy of a first and second metal wherein essentially all of the second metal is dissolved in the first metal. The electrical contact can be formed in situ by the densification of a premixed metal powder precursor during the hot pressing step employed in fabricating the electrostatic chuck.
摘要翻译：静电卡盘或基座包括嵌入在陶瓷体中的电极和/或加热元件，并且具有从电极延伸的电接触。电极或加热元件可以例如由钼和卡盘体由氮化铝制成。电接触包括组成比率的第一金属和第二金属，其中基本上所有的第二金属溶解在第一金属中，从而基本上防止第一和第二金属的金属间化合物的形成。电接触的一个实例包括约99.8重量％的钼和约0.2重量％的镍。或者，电极可以由组成比率的第一金属和第二金属制成，其中基本上所有的第二金属溶解在第一金属中，从而基本上防止第一和第二金属的金属间化合物的形成。电接触可以由诸如钼的金属制成，或者由第一和第二金属的合金制成，其中基本上所有的第二金属溶解在第一金属中。可以通过在制造静电卡盘的热压步骤期间通过预混合金属粉末前体的致密化来原位形成电接触。

7. 发明授权

US5589428A Silicon carbide with controlled porosity 失效
标题翻译：具有受控孔隙率的碳化硅
公开(公告)号：US5589428A
公开(公告)日：1996-12-31
申请号：US464919
申请日：1995-06-05
申请人： Ramesh Divakar , Sai-Kwing Lau
发明人： Ramesh Divakar , Sai-Kwing Lau
IPC分类号： C04B35/565 , C04B35/573 , C04B38/00 , C04B38/06 , F16C33/04 , F16C33/24 , F16J15/34 , C04B35/569 , C04B35/576
CPC分类号： C04B35/565 , C04B35/62655 , C04B35/632 , C04B35/634 , C04B35/63416 , C04B35/63424 , C04B35/63432 , C04B35/636 , C04B38/0074 , C04B38/065 , C04B38/067 , F16C33/043 , F16J15/3496 , C04B2111/00198 , C04B2235/3821 , C04B2235/383 , C04B2235/3865 , C04B2235/428 , C04B2235/48 , C04B2235/767 , C04B2235/77
摘要： Silicon carbide sintered bodies having controlled porosity in the range of about 2 to 12 vol %. in which the pores are generally spherical and about 50 to 500 microns in diameter, are prepared from raw batches containing a polymer fugitive. Sintered bodies in the form of mechanical seal members exhibit lower power consumption at low PV and, in addition, lower wear rates at high PV in comparison to commercially available silicon carbide seal members.
摘要翻译：具有约2至12体积％范围内的受控孔隙率的碳化硅烧结体。其中孔通常为球形并且直径为约50至500微米，由含有聚合物短液的原料制备。机械密封件形式的烧结体在低PV下表现出较低的功率消耗，此外，与市售的碳化硅密封件相比，高PV下的磨损率较低。

8. 发明申请

US20210005480A1 MULTI-ZONE SILICON NITRIDE WAFER HEATER ASSEMBLY HAVING CORROSION PROTECTIVE LAYER, AND METHODS OF MAKING AND USING THE SAME 有权
公开(公告)号：US20210005480A1
公开(公告)日：2021-01-07
申请号：US16918889
申请日：2020-07-01
申请人： Ramesh Divakar , Matthew Simpson , Alan Filer
发明人： Ramesh Divakar , Matthew Simpson , Alan Filer
IPC分类号： H01L21/67 , H05B3/28 , H05B3/12 , F27D5/00 , C04B35/584 , C04B35/634 , C04B35/63 , C04B41/00 , C04B41/45 , C04B41/50 , C04B41/87
摘要： A wafer heater assembly comprises a heater substrate and a non-porous outermost layer. The heater substrate comprises silicon nitride (Si3N4) and includes at least one heating element embedded therein. The non-porous outermost layer is associated with at least a first surface of the heater substrate. The non-porous outermost layer comprises a rare-earth (RE) disilicate (RE2Si2O7); where RE is one of Yb and Y. The non-porous outermost layer includes an exposed surface configured to contact a wafer for heating, the exposed surface opposite the first surface of the heater substrate. Methods of making wafer heater assemblies are also disclosed as well as methods of using the wafer heater assembly.

9. 发明授权

US5635430A Intermediate for producing porous silicon carbide 失效
标题翻译：生产多孔碳化硅的中间体
公开(公告)号：US5635430A
公开(公告)日：1997-06-03
申请号：US456986
申请日：1995-06-01
申请人： Ramesh Divakar , Sai-Kwing Lau , Stephen Chwastiak
发明人： Ramesh Divakar , Sai-Kwing Lau , Stephen Chwastiak
IPC分类号： C04B35/565 , C04B35/573 , C04B38/00 , C04B38/06 , F16C33/04 , F16C33/24 , F16J15/34 , C04B35/569
CPC分类号： C04B35/565 , C04B35/62655 , C04B35/632 , C04B35/634 , C04B35/63416 , C04B35/63424 , C04B35/63432 , C04B35/636 , C04B38/0074 , C04B38/065 , C04B38/067 , F16C33/043 , F16J15/3496 , C04B2111/00198 , C04B2235/3821 , C04B2235/383 , C04B2235/3865 , C04B2235/428 , C04B2235/48 , C04B2235/767 , C04B2235/77
摘要： Silicon carbide sintered bodies having controlled porosity in the range of about 2 to 12 vol %. in which the pores are generally spherical and about 50 to 500 microns in diameter, are prepared from raw batches containing a polymer fugitive. Sintered bodies in the form of mechanical seal members exhibit lower power consumption at low PV and, in addition, lower wear rates at high PV in comparison to commercially available silicon carbide seal members.
摘要翻译：具有约2至12体积％范围内的受控孔隙率的碳化硅烧结体。其中孔通常为球形并且直径为约50至500微米，由含有聚合物短液的原料制备。机械密封件形式的烧结体在低PV下表现出较低的功率消耗，此外，与市售的碳化硅密封件相比，高PV下的磨损率较低。

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