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1. 发明申请

US20130163313A1 MAGNETOELECTRIC MEMORY 有权
标题翻译：磁电记忆体
公开(公告)号：US20130163313A1
公开(公告)日：2013-06-27
申请号：US13704850
申请日：2011-06-16
申请人： Nicolas Tiercelin , Yannick Dusch , Philippe Jacques Pernod , Vladimir Preobrazhensky
发明人： Nicolas Tiercelin , Yannick Dusch , Philippe Jacques Pernod , Vladimir Preobrazhensky
IPC分类号： G11C11/14
CPC分类号： G11C11/14 , G11C11/16 , G11C11/161 , G11C11/165 , G11C11/1675 , G11C11/2275 , G11C11/5607 , H01L27/20
摘要： Magnetoelectric memory element comprising: a magnetic element (ELM) that has two equilibrium directions (P1, P2) in which its magnetization is stable, these direction not being mutually opposed; a piezoelectric or electrostrictive substrate (SP) mechanically coupled to said magnetic element; and a least a first electrode (EL1) and a second electrode (EL2), arranged so as to apply an electric field to the piezoelectric or electrostrictive substrate such that said substrate exerts on said magnetic element a non-isotropic mechanical stress, able to induce switching of the magnetization state of said magnetic element by magnetostrictive coupling. Memory cell comprising such a memory element. Direct-access non-volatile memory and programmable logic circuit comprising a plurality of such memory cells.
摘要翻译：磁电存储元件包括：具有两个平衡方向（P1，P2）的磁性元件（ELM），其磁化稳定，这些方向不相互相对; 机械耦合到所述磁性元件的压电或电致伸缩衬底（SP）; 以及至少第一电极（EL1）和第二电极（EL2），其布置成向压电或电致伸缩基板施加电场，使得所述基板对所述磁性元件施加非均质机械应力，能够诱导通过磁致伸缩耦合切换所述磁性元件的磁化状态。包含这种存储元件的存储单元。包括多个这样的存储单元的直接访问非易失性存储器和可编程逻辑电路。

2. 发明授权

US08908422B2 Magnetoelectric memory 有权
标题翻译：磁电存储器
公开(公告)号：US08908422B2
公开(公告)日：2014-12-09
申请号：US13704850
申请日：2011-06-16
申请人： Nicolas Tiercelin , Yannick Dusch , Philippe Jacques Pernod , Vladimir Preobrazhensky
发明人： Nicolas Tiercelin , Yannick Dusch , Philippe Jacques Pernod , Vladimir Preobrazhensky
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15 , G11C11/56 , G11C11/16 , H01L27/20
CPC分类号： G11C11/14 , G11C11/16 , G11C11/161 , G11C11/165 , G11C11/1675 , G11C11/2275 , G11C11/5607 , H01L27/20
摘要： A magnetoelectric memory element includes a magnetic element having an easy magnetization axis aligned along a first axis, means for applying to the magnetic element a magnetic polarization field aligned along a second axis not parallel to the first axis, a piezoelectric or electrostrictive substrate mechanically coupled with the magnetic element, and first and second electrodes arranged to apply an electrical field to the substrate so that the substrate exerts, on said magnetic element, a non-isotropic mechanical stress of a main direction generally oriented along a distinct third axis coplanar with the first and second axes. The magnetic element exhibits, by a combined effect of the magnetic polarization field and the easy magnetization axis, two distinct states of stable equilibrium of magnetization, corresponding to two not mutually opposed magnetization directions. The non-isotropic mechanical stress is sufficiently intense to induce a switchover between the two distinct states.
摘要翻译：磁电存储元件包括具有沿着第一轴对准的容易磁化轴的磁性元件，用于向磁性元件施加沿着不平行于第一轴线的第二轴对准的磁极化场的装置，与第一轴不平行的压电或电致伸缩衬底，所述磁性元件以及布置成向所述基板施加电场的第一和第二电极，使得所述基板在所述磁性元件上施加主方向的非各向异性机械应力，所述主方向通常沿着与第一和第二轴。磁性元件通过磁极化场和容易磁化轴的组合效应表现出两个不同的磁化平衡平衡状态，对应于两个不相互相反的磁化方向。非均质机械应力足够强烈以引起两种不同状态之间的切换。

3. 发明授权

US08978462B2 Hot-wire sensor of submillimeter size and associated method of production 有权
标题翻译：亚毫米尺寸的热丝传感器和相关的生产方法
公开(公告)号：US08978462B2
公开(公告)日：2015-03-17
申请号：US13640621
申请日：2011-04-11
申请人： Philippe Jacques Pernod , Leticia Gimeno Monge , Abdelkrim Talbi , Alain Merlen , Romain Victor Jean Viard , Vincent Mortet , Ali Soltani , Vladimir Preobrazhensky
发明人： Philippe Jacques Pernod , Leticia Gimeno Monge , Abdelkrim Talbi , Alain Merlen , Romain Victor Jean Viard , Vincent Mortet , Ali Soltani , Vladimir Preobrazhensky
IPC分类号： G01F1/68 , G01F1/69 , G01F1/684 , G01F1/692 , G01P5/12
CPC分类号： G01F1/69 , G01F1/6845 , G01F1/692 , G01P5/12 , Y10T29/49156
摘要： The invention relates to a submillimeter-sized hot-wire sensor (1) comprising a substrate (10), two support rods (11, 12), a metal wire (13) extending between the two ends of the support rods (11, 12), and electrical contacts (14, 15) disposed on the support rods, said contacts each being linked to one of the ends of the wire (13). The metal wire comprises at least two layers of metal materials, one of said layers being made of a material exhibiting a residual stress under tension and the other layer being made of a material exhibiting a residual stress under compression. The thicknesses of these metal layers are adapted so as to compensate the residual stresses between the various layers.
摘要翻译：本发明涉及一种亚毫米级的热丝传感器（1），其包括基底（10），两个支撑杆（11,12），金属线（13），其在支撑杆（11,12）的两端之间延伸）和设置在支撑杆上的电触头（14,15），所述触头各自连接到导线（13）的一个端部。金属线包括至少两层金属材料，其中一层由在张力下表现出残余应力的材料制成，另一层由在压缩下表现出残余应力的材料制成。这些金属层的厚度适于补偿各层之间的残余应力。

4. 发明申请

US20130125644A1 Hot-Wire Sensor of Submillimeter Size and Associated Method of Production 有权
标题翻译：亚毫米尺寸的热线传感器和相关的生产方法
公开(公告)号：US20130125644A1
公开(公告)日：2013-05-23
申请号：US13640621
申请日：2011-04-11
申请人： Philippe Jacques Pernod , Leticia Gimeno Monge , Abdelkrim Talbi , Alain Merlen , Romain Victor Jean Viard , Vincent Mortet , Ali Soltani , Vladimir Preobrazhensky
发明人： Philippe Jacques Pernod , Leticia Gimeno Monge , Abdelkrim Talbi , Alain Merlen , Romain Victor Jean Viard , Vincent Mortet , Ali Soltani , Vladimir Preobrazhensky
IPC分类号： G01F1/69
CPC分类号： G01F1/69 , G01F1/6845 , G01F1/692 , G01P5/12 , Y10T29/49156
摘要： The invention relates to a submillimeter-sized hot-wire sensor (1) comprising a substrate (10), two support rods (11, 12), a metal wire (13) extending between the two ends of the support rods (11, 12), and electrical contacts (14, 15) disposed on the support rods, said contacts each being linked to one of the ends of the wire (13). The metal wire comprises at least two layers of metal materials, one of said layers being made of a material exhibiting a residual stress under tension and the other layer being made of a material exhibiting a residual stress under compression. The thicknesses of these metal layers are adapted so as to compensate the residual stresses between the various layers.
摘要翻译：本发明涉及一种亚毫米级的热丝传感器（1），其包括基底（10），两个支撑杆（11,12），金属线（13），其在支撑杆（11,12）的两端之间延伸）和设置在支撑杆上的电触头（14,15），所述触头各自连接到导线（13）的一个端部。金属线包括至少两层金属材料，其中一层由在张力下表现出残余应力的材料制成，另一层由在压缩下表现出残余应力的材料制成。这些金属层的厚度适于补偿各层之间的残余应力。

5. 发明授权

US09476746B2 Miniaturized sensor comprising a heating element, and associated production method 有权
标题翻译：微型传感器包括加热元件和相关联的制造方法
公开(公告)号：US09476746B2
公开(公告)日：2016-10-25
申请号：US14232040
申请日：2012-07-12
申请人： Romain Viard , Abdelkrim Talbi , Philippe Jacques Pernod , Alain Merlen , Vladimir Preobrazhensky
发明人： Romain Viard , Abdelkrim Talbi , Philippe Jacques Pernod , Alain Merlen , Vladimir Preobrazhensky
IPC分类号： G01F1/688 , B81B3/00 , G01F1/684 , G01L21/12 , H01L41/316 , H01L41/332
CPC分类号： G01F1/688 , B81B3/0081 , B81B2201/0264 , B81B2201/0292 , B81B2203/0109 , G01F1/6845 , G01F1/6882 , G01L21/12 , H01L41/316 , H01L41/332
摘要： The invention relates to a miniaturized sensor having a heating element, and to an associated production method. The sensor includes a substrate, a cavity and a heat-insulating structure suspended above the cavity by areas connecting to the substrate. The heat-insulating structure includes at least two bridges extending above the cavity, the heating element being supported by said bridges, extending transversely thereto.
摘要翻译：本发明涉及一种具有加热元件的微型传感器，以及相关的生产方法。传感器包括基板，空腔和隔热结构，该结构通过连接到基板的区域悬挂在空腔上方。隔热结构包括在空腔上方延伸的至少两个桥，加热元件由所述桥支撑，横向延伸。

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