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1. 发明申请

US20090257323A1 Watch with rotatable case 审中-公开
标题翻译：手表带旋转外壳
公开(公告)号：US20090257323A1
公开(公告)日：2009-10-15
申请号：US12082140
申请日：2008-04-09
申请人： Ali Soltani
发明人： Ali Soltani
IPC分类号： G04B37/18 , G04B37/00
CPC分类号： G04B37/0427
摘要： A rotatable wrist watch is provided. The rotatable wrist watch includes a watch case, a dial, a crown, an outer periphery, a wrist strap and a spindle. The watch case has an exterior and an interior. The exterior includes two opposing faces and a side portion. A dial is located on each opposing face with a plurality of dials located on at least one of the opposing faces. Each dial indicates a time. A crown is provided for each dial. Each crown is located on the side portion and is movable to adjust the time indicated by the respective dial. The outer periphery is located a distance from and circumscribing the watch case. The wrist strap is coupled to the outer periphery. The spindle extends between the watch case and the outer periphery and is configured to permit the watch case to pivot about an axis between a first position where one of the watch faces is visible and a second position where the other watch face is visible.
摘要翻译：提供可旋转的手表。可旋转手表包括表壳，表盘，表冠，外周，腕带和主轴。表壳有外观和内饰。外部包括两个相对的面和侧面部分。表盘位于每个相对面上，其中多个表盘位于至少一个相对面上。每个拨号表示一个时间。为每个表盘提供表冠。每个表冠位于侧面部分，并且可移动以调节由相应的表盘指示的时间。外周与外壳隔开一定距离。腕带与外周连接。主轴在表壳和外周之间延伸并且被配置为允许手表壳体围绕其中一个表面可见的第一位置和另一个表面可见的第二位置之间的轴线枢转。

2. 外观设计

USD584172S1 Watch with rotatable case 有权
标题翻译：手表带旋转外壳
公开(公告)号：USD584172S1
公开(公告)日：2009-01-06
申请号：US29306582
申请日：2008-04-11
申请人： Ali Soltani
设计人： Ali Soltani

3. 发明申请

US20140327012A1 HEMT TRANSISTORS CONSISTING OF (III-B)-N WIDE BANDGAP SEMICONDUCTORS COMPRISING BORON 审中-公开
标题翻译：包含BORON（III-B）-N宽带束半导体的HEMT晶体管
公开(公告)号：US20140327012A1
公开(公告)日：2014-11-06
申请号：US14111163
申请日：2012-04-16
申请人： Abdallah Ougazzaden , Marie-Antoinette Poisson , Vinod Ravindran , Ali Soltani , Jean-Claude De Jaeger
发明人： Abdallah Ougazzaden , Marie-Antoinette Poisson , Vinod Ravindran , Ali Soltani , Jean-Claude De Jaeger
IPC分类号： H01L29/778 , H01L29/205
CPC分类号： H01L29/7787 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/02507 , H01L21/0254 , H01L23/291 , H01L23/3171 , H01L29/04 , H01L29/1075 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/7783 , H01L2924/0002 , H01L2924/00
摘要： An electronic HEMT transistor structure comprises a heterojunction formed from a first layer, called a buffer layer, of a first wide bandgap semiconductor material, and a second layer of a second wide bandgap semiconductor material, with a bandgap width EG2 larger than that Eg1 of the first material, and a two-dimensional electron gas flowing in a channel confined in the first layer under the interface of the heterojunction. The first layer furthermore comprises a layer of a BGaN material under the channel, with an average boron concentration of at least 0.1%, improving the electrical performance of the transistor. Application to microwave power components.
摘要翻译：电子HEMT晶体管结构包括由第一宽带隙半导体材料的第一层（称为缓冲层）和第二宽带隙半导体材料的第二层形成的异质结，其带隙宽度EG2大于第一材料和在限制在第一层的异质结界面下的通道中流动的二维电子气。第一层还包括在沟道下方的BGaN材料层，其平均硼浓度至少为0.1％，改善了晶体管的电性能。应用于微波功率元件。

4. 发明授权

US08978462B2 Hot-wire sensor of submillimeter size and associated method of production 有权
标题翻译：亚毫米尺寸的热丝传感器和相关的生产方法
公开(公告)号：US08978462B2
公开(公告)日：2015-03-17
申请号：US13640621
申请日：2011-04-11
申请人： Philippe Jacques Pernod , Leticia Gimeno Monge , Abdelkrim Talbi , Alain Merlen , Romain Victor Jean Viard , Vincent Mortet , Ali Soltani , Vladimir Preobrazhensky
发明人： Philippe Jacques Pernod , Leticia Gimeno Monge , Abdelkrim Talbi , Alain Merlen , Romain Victor Jean Viard , Vincent Mortet , Ali Soltani , Vladimir Preobrazhensky
IPC分类号： G01F1/68 , G01F1/69 , G01F1/684 , G01F1/692 , G01P5/12
CPC分类号： G01F1/69 , G01F1/6845 , G01F1/692 , G01P5/12 , Y10T29/49156
摘要： The invention relates to a submillimeter-sized hot-wire sensor (1) comprising a substrate (10), two support rods (11, 12), a metal wire (13) extending between the two ends of the support rods (11, 12), and electrical contacts (14, 15) disposed on the support rods, said contacts each being linked to one of the ends of the wire (13). The metal wire comprises at least two layers of metal materials, one of said layers being made of a material exhibiting a residual stress under tension and the other layer being made of a material exhibiting a residual stress under compression. The thicknesses of these metal layers are adapted so as to compensate the residual stresses between the various layers.
摘要翻译：本发明涉及一种亚毫米级的热丝传感器（1），其包括基底（10），两个支撑杆（11,12），金属线（13），其在支撑杆（11,12）的两端之间延伸）和设置在支撑杆上的电触头（14,15），所述触头各自连接到导线（13）的一个端部。金属线包括至少两层金属材料，其中一层由在张力下表现出残余应力的材料制成，另一层由在压缩下表现出残余应力的材料制成。这些金属层的厚度适于补偿各层之间的残余应力。

5. 发明申请

US20130125644A1 Hot-Wire Sensor of Submillimeter Size and Associated Method of Production 有权
标题翻译：亚毫米尺寸的热线传感器和相关的生产方法
公开(公告)号：US20130125644A1
公开(公告)日：2013-05-23
申请号：US13640621
申请日：2011-04-11
申请人： Philippe Jacques Pernod , Leticia Gimeno Monge , Abdelkrim Talbi , Alain Merlen , Romain Victor Jean Viard , Vincent Mortet , Ali Soltani , Vladimir Preobrazhensky
发明人： Philippe Jacques Pernod , Leticia Gimeno Monge , Abdelkrim Talbi , Alain Merlen , Romain Victor Jean Viard , Vincent Mortet , Ali Soltani , Vladimir Preobrazhensky
IPC分类号： G01F1/69
CPC分类号： G01F1/69 , G01F1/6845 , G01F1/692 , G01P5/12 , Y10T29/49156
摘要： The invention relates to a submillimeter-sized hot-wire sensor (1) comprising a substrate (10), two support rods (11, 12), a metal wire (13) extending between the two ends of the support rods (11, 12), and electrical contacts (14, 15) disposed on the support rods, said contacts each being linked to one of the ends of the wire (13). The metal wire comprises at least two layers of metal materials, one of said layers being made of a material exhibiting a residual stress under tension and the other layer being made of a material exhibiting a residual stress under compression. The thicknesses of these metal layers are adapted so as to compensate the residual stresses between the various layers.
摘要翻译：本发明涉及一种亚毫米级的热丝传感器（1），其包括基底（10），两个支撑杆（11,12），金属线（13），其在支撑杆（11,12）的两端之间延伸）和设置在支撑杆上的电触头（14,15），所述触头各自连接到导线（13）的一个端部。金属线包括至少两层金属材料，其中一层由在张力下表现出残余应力的材料制成，另一层由在压缩下表现出残余应力的材料制成。这些金属层的厚度适于补偿各层之间的残余应力。

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