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1. 发明授权

US06646779B2 Strain-isolated stage mirror 失效
公开(公告)号：US06646779B2
公开(公告)日：2003-11-11
申请号：US10002408
申请日：2001-11-15
申请人： Peter B. Mumola , Flemming Tinker , Steven R. Patterson
发明人： Peter B. Mumola , Flemming Tinker , Steven R. Patterson
IPC分类号： G02B2600
CPC分类号： G02B26/0833
摘要： A strain-isolated mirror is made from a substrate having first and second body portions. First and second connecting portions extend across a gap between the first body portion and the second body portion. A first flexural hinge on the first second connecting portion couples the second connecting portion to the first body portion.

2. 发明授权

US5292400A Method and apparatus for producing variable spatial frequency control in plasma assisted chemical etching 失效
标题翻译：在等离子辅助化学蚀刻中产生可变空间频率控制的方法和装置
公开(公告)号：US5292400A
公开(公告)日：1994-03-08
申请号：US854718
申请日：1992-03-23
申请人： Peter B. Mumola
发明人： Peter B. Mumola
IPC分类号： C23F4/00 , H01J37/32 , H01L21/02 , H01L21/302 , H01L21/3065 , H01L27/12 , B44C1/22 , C03C15/00 , H01L21/306
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32623 , H01J37/32733
摘要： A reactor 10 having a vacuum housing 30 which encloses a plurality of plasma chambers 14a, 14b is used to perform local plasma assisted chemical etching on an etchable substrate 12. The chambers 14a, 14b are movable and are sized according to the removal material footprint desired. Radio frequency driven electrodes 20a, 20b and gas diffuser/electrodes 22a, 22b have the same diameter as the chambers 14a, 14b. The substrate 12 is mounted on a substrate holder 44 which also acts as the other electrode. The holder 44 is mounted on an X-Y positioning table 46. A process gas is flowed into a preselected chamber with rf power so as to disassociated the process gas into a plasma. The plasma chambers 14a, 14b may be scanned over the substrate surface while the gap between the chambers and the substrate is varied to yield a desired etch profile.
摘要翻译：具有封闭多个等离子体室14a，14b的真空壳体30的电抗器10用于在可蚀刻基板12上执行局部等离子体辅助化学蚀刻。腔室14a，14b可移动并根据所需的去除材料覆盖尺寸。射频驱动电极20a，20b和气体扩散器/电极22a，22b具有与腔室14a，14b相同的直径。衬底12安装在也用作另一电极的衬底保持器44上。保持器44安装在X-Y定位台46上。处理气体以rf功率流入预选室，以将工艺气体分解为等离子体。等离子体室14a，14b可以在衬底表面上扫描，同时腔室和衬底之间的间隙被改变以产生期望的蚀刻轮廓。

3. 发明授权

US5543919A Apparatus and method for performing high spatial resolution thin film layer thickness metrology 失效
标题翻译：用于执行高空间分辨率薄膜层厚度测量的装置和方法
公开(公告)号：US5543919A
公开(公告)日：1996-08-06
申请号：US309516
申请日：1994-09-20
申请人： Peter B. Mumola
发明人： Peter B. Mumola
IPC分类号： G01B11/06 , G02B3/00 , H01L21/02 , H01L27/12
CPC分类号： G01B11/0625
摘要： An apparatus (2) that performs high resolution thickness metrology on a thin film layer of a wafer (24), includes a filtered white light source that forms a collimated monochromatic light beam (19). The filtered white light source includes a halogen lamp (10), a condensing lens (12), a circular aperture (14), a collimator lens (16), and a narrow band filter wheel (18). The collimated monochromatic light beam (19) is passed through a beamsplitter (60), a second collimator lens (20), a third collimator lens (22), and a lenslet array (38), such that a corresponding array of sample points (39) on the surface of the wafer (24) are irradiated with focused monochromatic light. A reflectance pattern is formed at each sample point (39) due to coherent interactions in the monochromatic light as it is reflected within the wafer structure (24). An image of each reflectance pattern is reflected off the surface of the wafer (24) and is directed onto a detector array (31) of a charge coupled device (CCD) camera (30). Each reflectance pattern image is displayed on the CCD camera detector array (31) and captured by the CCD camera (30). Each captured image is digitized by a digitizing circuit (34) and stored by a computer (36). The computer (36) then compares this measured reflectance data to reference reflectance data already stored so as to determine the thickness of the thin film layer at each sample point (39) on the wafer (24).
摘要翻译：在晶片（24）的薄膜层上执行高分辨率厚度测量的装置（2）包括形成准直单色光束（19）的滤光白光源。滤光白光源包括卤素灯（10），聚光透镜（12），圆形孔（14），准直透镜（16）和窄带滤光轮（18）。准直单色光束（19）通过分束器（60），第二准直透镜（20），第三准直透镜（22）和小透镜阵列（38），使得相应的采样点阵列在晶片（24）的表面上照射聚焦的单色光。由于在晶片结构（24）内反射的单色光中的相干相互作用，在每个采样点（39）处形成反射率图案。每个反射率图案的图像从晶片（24）的表面反射并被引导到电荷耦合器件（CCD）照相机（30）的检测器阵列（31）上。每个反射图案图像显示在CCD相机检测器阵列（31）上，由CCD照相机（30）捕获。每个拍摄的图像由数字化电路（34）数字化并由计算机（36）存储。然后，计算机（36）将该测量的反射率数据与已经存储的参考反射率数据进行比较，以便确定晶片（24）上每个采样点（39）处的薄膜层的厚度。

4. 发明授权

US4516062A Actuator 失效
标题翻译：执行器
公开(公告)号：US4516062A
公开(公告)日：1985-05-07
申请号：US545985
申请日：1983-10-27
申请人： Carlo La Fiandra , Peter B. Mumola
发明人： Carlo La Fiandra , Peter B. Mumola
IPC分类号： G05B19/39
CPC分类号： G05B19/39
摘要： This invention is directed to an actuator which is particularly adapted among many other possible uses, or use in adjusting the configuration of deformable mirrors. The actuator comprises a housing mounted for movement on a fixed base, the housing being fabricated from magnetic material and being configured to have two spaced pole faces of opposite polarity, a housing coil mounted on the housing to form an electro-magnet, apparatus for moving the housing having infinite reflected inertia, a force arm mounted for movement on a fixed base, one portion of the force arm having an output drive pick-off and another portion of the force arm being disposed between the poles faces of the housing, pole pieces mounted on the force arm adjacent the pole faces, respectively, a force arm coil mounted on the force arm to form an electro-magnet, a first permanent magnet mounted on the housing and a second permanent magnet mounted on the force arm which coact to form a magnet coupling between the force arm and the housing, a controller for controlling the apparatus for moving the housing to thereby control the course adjustment output from the force arm and provide low frequency integration of the force arm and for controlling the flow of current to the housing coil and the force arm coil to provide a net force greater than the net force of the two permanent magnets to thereby control the fine adjustment output from the force arm.
摘要翻译：本发明涉及一种特别适用于许多其它可能用途的致动器，或用于调节可变形反射镜的构造。致动器包括安装用于在固定基座上移动的壳体，壳体由磁性材料制成并且被构造成具有相反极性的两个间隔开的极面，安装在壳体上以形成电磁体的壳体线圈，用于移动的装置所述壳体具有无限的反射惯性，安装用于在固定基座上移动的力臂，所述力臂的一部分具有输出驱动拾取器，并且所述力臂的另一部分设置在所述壳体的极面之间，安装在靠近极面的力臂上，安装在力臂上的力臂线圈形成电磁体，安装在壳体上的第一永久磁铁和安装在力臂上的第二永久磁铁，其共同形成在力臂和壳体之间的磁体联接，用于控制用于移动壳体的装置的控制器，从而控制来自力臂的行程调节输出并提供该力臂的低频积分并且用于控制到壳体线圈和力臂线圈的电流流动以提供大于两个永磁体的净力的净力，从而控制来自力臂的微调输出。

5. 发明授权

US5419803A Method of planarizing microstructures 失效
标题翻译：平面化微观结构的方法
公开(公告)号：US5419803A
公开(公告)日：1995-05-30
申请号：US153681
申请日：1993-11-17
申请人： Peter B. Mumola
发明人： Peter B. Mumola
IPC分类号： H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/3105 , B44C1/22 , C03C15/00
CPC分类号： H01L21/31053
摘要： A method of planarizing a microstructure (16) includes the steps of providing a layer (18) of material over the microstructure (16) such that an overcoating surface (20) is formed, measuring the thickness of the layer (18) across the surface (20) forming a dwell time versus position map and removing material from the layer (18) of material by use of a plasma assisted chemical etching tool in accordance with the dwell time versus position map.
摘要翻译：平面化微结构（16）的方法包括以下步骤：在微结构（16）之上提供材料层（18），使得形成外涂层表面（20），测量穿过表面的层（18）的厚度（20）形成停留时间与位置图，并且根据停留时间与位置图通过使用等离子体辅助化学蚀刻工具从材料层（18）去除材料。

6. 发明授权

US5229872A Exposure device including an electrically aligned electronic mask for micropatterning 失效
标题翻译：包括用于微波的电气对准电子掩模的曝光装置
公开(公告)号：US5229872A
公开(公告)日：1993-07-20
申请号：US822794
申请日：1992-01-21
申请人： Peter B. Mumola
发明人： Peter B. Mumola
IPC分类号： H01L21/30 , G03F7/20 , H01L21/027
CPC分类号： G03F7/70283 , G03F7/2057 , G03F7/70291
摘要： An apparatus 10 for micropatterning a photoresist coated surface 12 of a semiconductor wafer 14 includes a computer 50 for controlling an image on a screen 29 of a cathode ray tube (CRT) 30. The CRT screen 29 is optically connected to a liquid crystal light valve (LCLV) 26 by a fiber optic faceplate 28. This connection is such that the computer controlled image on the CRT screen 29 is reproduced on the face 27 of the LCLV 26 as a reflective pattern of this image. An argon-ion laser 16 provides a polarized monochromatic light beam 18 that is reflected from the face 27 of the LCLV 26. This reflected beam 32 is convergently focused by a lens system 36 onto a projected area 37 of the photoresist coated wafer surface 12, thereby exposing the photoresist with an image of the LCLV reflective pattern. A helium-neon laser 38 provides a polarized monochromatic light beam 44 that is convergently focused onto the same projected area 37 of the wafer surface 12. However, the wavelength of the helium-neon provided light beam 44 is such that there is no exposure to the photoresist coated wafer surface 12. The helium-neon light beam is reflected from the projected area 37 of the wafer surface 12 and directed toward an image plane 49 of a charge coupled device (CCD) camera 48. The CCD camera 48 captures an image of the projected area 37 of the wafer surface 12 and a computer 50 digitizes this image. The computer 50 determines the position of the wafer 14 with respect to the projected reflective pattern image, and updates the image on the CRT screen 29 if the projected reflective pattern image is not properly aligned onto the wafer surface 12. Thus, the entire surface 12 of the wafer 14 may be micropatterned by moving the wafer 14 and updating the CRT screen 29 image in accordance with this movement.
摘要翻译：用于对半导体晶片14的光致抗蚀剂涂覆表面12进行微图形化的装置10包括用于控制阴极射线管（CRT）30的屏幕29上的图像的计算机50. CRT屏幕29与液晶光阀（LCLV）26。这种连接使得CRT屏幕29上的计算机控制的图像在LCLV 26的表面27上被再现为该图像的反射图案。氩离子激光器16提供从LCLV 26的表面27反射的偏振单色光束18.该反射光束32被透镜系统36会聚地聚焦到光致抗蚀剂涂覆的晶片表面12的投影区域37上，从而用LCLV反射图案的图像曝光光致抗蚀剂。氦氖激光器38提供了会聚地聚焦到晶片表面12的相同投影区域37上的偏振单色光束44.然而，提供氦氖的光束44的波长使得不暴露于光致抗蚀剂涂覆的晶片表面12.氦氖光束从晶片表面12的投影区域37反射并指向电荷耦合器件（CCD）相机48的像平面49.CIC照相机48捕获图像的晶片表面12的投影面积37和计算机50对该图像进行数字化。计算机50相对于投射的反射图案图像确定晶片14的位置，并且如果投影的反射图案图像未正确对准到晶片表面12上，则更新CRT屏幕29上的图像。因此，整个表面12 可以通过移动晶片14并根据该移动来更新CRT屏幕29的图像来微图案化。

7. 发明授权

US6074947A Process for improving uniform thickness of semiconductor substrates using plasma assisted chemical etching 失效
标题翻译：使用等离子体辅助化学蚀刻改善半导体衬底的均匀厚度的方法
公开(公告)号：US6074947A
公开(公告)日：2000-06-13
申请号：US113274
申请日：1998-07-10
申请人： Peter B. Mumola
发明人： Peter B. Mumola
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/66 , H01L21/302
CPC分类号： B24B37/013 , H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L22/26
摘要： A process for improving the uniformity of the thickness of a semiconductor substrate utilizing plasma assisted chemical etching is disclosed. The process includes measuring the thickness of a semiconductor substrate at discrete points on the front surface, computing a dwell time versus position map based on the measured thickness data, mathematically inverting the position map to allow material to be removed from the back surface, and selectively removing material from the back surface of the substrate by plasma assisted chemical etching to improve the thickness uniformity of the substrate.
摘要翻译：公开了一种利用等离子体辅助化学蚀刻改善半导体衬底的厚度均匀性的方法。该方法包括在前表面的离散点处测量半导体衬底的厚度，基于测量的厚度数据计算停留时间与位置图，在数学上反转位置图以允许材料从后表面移除，并且选择性地通过等离子体辅助化学蚀刻从衬底的背表面去除材料，以改善衬底的厚度均匀性。

8. 发明授权

US5474647A Wafer flow architecture for production wafer processing 失效
标题翻译：晶圆流程架构用于生产晶圆加工
公开(公告)号：US5474647A
公开(公告)日：1995-12-12
申请号：US153236
申请日：1993-11-15
申请人： Sherman K. Poultney , Peter B. Mumola , Joseph P. Prusak , George J. Gardopee , Thomas J. McHugh
发明人： Sherman K. Poultney , Peter B. Mumola , Joseph P. Prusak , George J. Gardopee , Thomas J. McHugh
IPC分类号： H01L21/302 , H01L21/00 , H01L21/02 , H01L21/306 , H01L21/677
CPC分类号： H01L21/67063
摘要： A method for controlling the flow of semiconductor wafers within a semiconductor wafer processing facility. This method includes a wafer storage and preparation area (10) and a wafer metrology and etch area (12), both of which are monitored and/or controlled by a master controller (14). The wafer storage and preparation area (10) is typically kept at a class 10 clean room level and is comprised of a wafer storage area (16) and a wafer preparation area (18). The wafer metrology and etch area (12) is typically kept at a class 1000 clean room level and is comprised of an I/O cassette module (22), a wafer pre-aligner (24), a wafer router (26), a wafer metrology instrument (28), and a wafer etching instrument (30). The semiconductor wafers are transported, either manually or automatically, between the wafer storage area (16) and the wafer preparation area (18), as well as between the wafer storage and preparation area (10) and the wafer metrology and etch area (12), within wafer storage cassettes ( 20). The semiconductor wafers are individually transported between the I/O cassette module (22), the wafer pre-aligner (24), the wafer metrology instrument (28), and the wafer etching instrument (30) by the wafer router (26).
摘要翻译：一种用于控制半导体晶片处理设备内的半导体晶片的流动的方法。该方法包括晶片存储和准备区域（10）以及晶片计量和蚀刻区域（12），它们都由主控制器（14）监视和/或控制。晶片存储和制备区域（10）通常保持在10级洁净室水平，并且包括晶片存储区域（16）和晶片准备区域（18）。晶片测量和蚀刻区域（12）通常保持在1000级洁净室水平，并且包括I / O盒模块（22），晶片预对准器（24），晶片路由器（26），晶片计量仪器（28）和晶片蚀刻仪器（30）。半导体晶片手动或自动地在晶片存储区域（16）和晶片制备区域（18）之间以及晶片存储和准备区域（10）之间以及晶片计量和蚀刻区域（12）之间传送），在晶片存储盒（20）内。半导体晶片由晶片路由器（26）在I / O盒模块（22），晶片预对准器（24），晶片计量仪器（28）和晶片蚀刻仪器（30）之间单独传输。

9. 发明授权

US5365031A Apparatus and method for shielding a workpiece holding mechanism from depreciative effects during workpiece processing 失效
标题翻译：在工件加工过程中屏蔽工件夹持机构免受折磨影响的装置和方法
公开(公告)号：US5365031A
公开(公告)日：1994-11-15
申请号：US855404
申请日：1992-03-23
申请人： Peter B. Mumola
发明人： Peter B. Mumola
IPC分类号： C23F1/08 , H01L21/00 , H01L21/02 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683 , H01L27/12 , B23K9/00
CPC分类号： H01L21/67075 , H01L21/68
摘要： An apparatus for shielding a plurality of wafer registration surfaces 14, 30 and a wafer retention stage 26 from depreciative effects of a chemical etching process includes a pair of etching shields 32, 32' that are positioned along an outside edge of a wafer 10. The wafer 10 is registered to the wafer retention stage 26 by the registration surfaces 14, 30. The wafer retention stage 26, and hence the wafer 10, rotates about an axis 36 through the center of the wafer 10. A chemical etching instrument probe 18 is moved, with respect to the wafer 10, along a fixed wafer diameter 34 while the wafer 10 is rotating. The probe 18 is initially positioned above a first etching shield 32' and is moved, with respect to the wafer 10, across the wafer diameter 34 until it reaches a second etching shield 32. Thus, the probe 18 scans the entire surface of the wafer 10 without extending outside the wafer edge to depreciatively effect the wafer retention materials 14, 26, 30.
摘要翻译：用于屏蔽多个晶片对准表面14,30和晶片保持台26的装置不受化学蚀刻工艺的折磨影响，包括沿着晶片10的外边缘定位的一对蚀刻屏蔽32,32'。晶片10通过对准表面14,30与晶片保持台26配准。晶片保持台26，因此晶片10绕轴线36绕晶片10的中心旋转。化学蚀刻仪探头18是相对于晶片10沿着固定晶片直径34移动，同时晶片10旋转。探针18最初位于第一蚀刻屏蔽层32'的上方并相对于晶片10移动穿过晶片直径34，直到其到达第二蚀刻屏蔽层32.因此，探针18扫描晶片的整个表面 10，而不延伸到晶片边缘外部，以贬低影响晶片保持材料14,26,30。

10. 发明授权

US5337150A Apparatus and method for performing thin film layer thickness metrology using a correlation reflectometer 失效
标题翻译：使用相关反射计进行薄膜层厚度测量的装置和方法
公开(公告)号：US5337150A
公开(公告)日：1994-08-09
申请号：US925721
申请日：1992-08-04
申请人： Peter B. Mumola
发明人： Peter B. Mumola
IPC分类号： G01B11/06
CPC分类号： G01B11/0625
摘要： An apparatus (10) that measures the thickness of a thin film layer of a wafer (12) is described. The thickness of the thin film layer is measured by irradiating a reference wafer (22) with a beam (21) of broadband radiation. The reference wafer (22) has a layer structure similar to that of the wafer (12) undergoing measurement, whereby the thin film layer of the reference wafer (22) that corresponds to the thin film layer to be measured is varied over a specific range of known thicknesses. Thus, the incident beam (21) of broadband radiation is reflected from the reference wafer (22) having a unique spectral signature that corresponds to one of these known thicknesses. A reflected beam (23, 25, 27) of unique spectral radiation is projected onto the wafer (12) undergoing measurement, where it is reflected to produce a beam (29) of unique spectral radiation having a characteristic that is indicative of the thickness of the thin film layer to be measured. The characteristic of the beam (29) of unique spectral radiation is captured by a charge coupled device camera (34), and a computer (36) correlates this captured characteristic with one of the known thin film layer thicknesses of the reference wafer (22) to provide an output that corresponds to the thickness of the thin film layer whose thickness is desired to be measured.
摘要翻译：描述了测量晶片（12）的薄膜层的厚度的装置（10）。通过用宽带辐射的光束（21）照射参考晶片（22）来测量薄膜层的厚度。参考晶片（22）具有类似于进行测量的晶片（12）的层结构，由此与待测量的薄膜层相对应的参考晶片（22）的薄膜层在特定范围内变化已知厚度。因此，宽带辐射的入射光束（21）从具有对应于这些已知厚度之一的独特光谱特征的参考晶片（22）反射。将独特光谱辐射的反射光束（23,25,27）投影到经历测量的晶片（12）上，在其上被反射以产生具有指示厚度的特性的唯一光谱辐射的光束（29）要测量的薄膜层。独特光谱辐射的光束（29）的特征由电荷耦合器件照相机（34）捕获，并且计算机（36）将捕获的特征与参考晶片（22）的已知薄膜层厚度之一相关联，以提供对应于期望测量其厚度的薄膜层的厚度的输出。

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