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1. 发明申请

US20060263514A1 Device and method for forming improved resist layer 审中-公开
标题翻译：用于形成改进的抗蚀剂层的装置和方法
公开(公告)号：US20060263514A1
公开(公告)日：2006-11-23
申请号：US11497140
申请日：2006-08-01
申请人： Paul Shirley
发明人： Paul Shirley
IPC分类号： B05D3/12 , C23C16/52 , B05C11/00
CPC分类号： G03F7/162
摘要： A device and method for improving the uniformity of resist layers. The device includes a rotatable substrate support, a resist supply, a control fluid supply and a controller. In operation, the placement of a control fluid is varied locally to promote a localized change in a rate of evaporation of the deposited resist to form a substantially uniform thickness of the deposited resist layer. The control fluid supply includes a pressure source, a conduit and a discharge orifice such that control fluid impinges onto a localized portion of the deposited resist such that thickness variations that would otherwise occur across portions of the deposited resist are avoided or minimized.
摘要翻译：一种用于提高抗蚀层的均匀性的装置和方法。该装置包括可旋转的基板支撑件，抗蚀剂供应源，控制流体源和控制器。在操作中，控制流体的放置局部地变化以促进沉积的抗蚀剂的蒸发速率的局部变化，以形成沉积的抗蚀剂层的基本均匀的厚度。控制流体供应包括压力源，管道和排放孔，使得控制流体冲击到沉积的抗蚀剂的局部部分上，使得避免或最小化在沉积的抗蚀剂的部分上会发生的厚度变化。

2. 发明申请

US20050175775A1 Device and method for forming improved resist layer 审中-公开
公开(公告)号：US20050175775A1
公开(公告)日：2005-08-11
申请号：US10773968
申请日：2004-02-06
申请人： Paul Shirley
发明人： Paul Shirley
IPC分类号： B05C5/02 , B05D3/12 , G03F7/16
CPC分类号： G03F7/162
摘要： A device and method for improving the uniformity of resist layers. The method includes controlling the evaporation of solvent from a deposited resist layer by impinging a control fluid onto a deposited resist layer. Optional sensing of flow parameters and other environmental conditions (such as temperature or humidity) adjacent the deposited resist layer, as well as determining whether a deviation exists between the sensed parameter(s) and a predetermined reference amount, and adjusting the appropriate parameter(s) to reduce the deviation if such deviation exists could also be performed. The device may also include a rotatable substrate support that can be used in conjunction with the control fluid supply.

3. 发明授权

US06402845B1 Process liquid dispense method and apparatus 失效
标题翻译：工艺液体分配方法和装置
公开(公告)号：US06402845B1
公开(公告)日：2002-06-11
申请号：US09715298
申请日：2000-11-17
申请人： Paul Shirley
发明人： Paul Shirley
IPC分类号： B05C1100
CPC分类号： H01L21/6715 , B05C11/08 , B05D1/005 , G03F7/162
摘要： Methods of dispensing process liquid to provide a uniform layer of the liquid on a surface are disclosed in accordance with the present invention. The methods include dispensing a process liquid on the surface and rotating the surface at a first speed to distribute an effective amount of the process liquid to substantially wet the surface. The method further includes rotating the surface at a second speed to distribute an effective amount of the process liquid to produce a layer of the process liquid on the surface. In a preferred embodiment for dispensing photoresist onto the surface of a semiconductor wafer, the method includes rotating the wafer at the first speed prior to dispensing the photoresist onto the surface. The preferred method further includes decelerating the wafer from the first to the second speed during the dispensing of the photoresist and terminating the dispensing process after the second speed is reached.
摘要翻译：根据本发明公开了分配处理液体以在表面上提供均匀的液体层的方法。所述方法包括在表面上分配处理液体并以第一速度旋转表面以分配有效量的处理液体以基本上润湿表面。该方法还包括以第二速度旋转表面以分配有效量的处理液体以在表面上产生处理液体层。在用于将光致抗蚀剂分配到半导体晶片的表面上的优选实施例中，该方法包括在将光致抗蚀剂分配到表面之前以第一速度旋转晶片。优选的方法还包括在分配光致抗蚀剂期间将晶片从第一速度减速至第二速度，并且在达到第二速度之后终止分配过程。

4. 发明授权

US5912049A Process liquid dispense method and apparatus 失效
标题翻译：工艺液体分配方法和装置
公开(公告)号：US5912049A
公开(公告)日：1999-06-15
申请号：US909572
申请日：1997-08-12
申请人： Paul Shirley
发明人： Paul Shirley
IPC分类号： B05C11/08 , B05D1/00 , G03F7/16 , H01L21/00 , B05D3/01
CPC分类号： H01L21/6715 , B05C11/08 , B05D1/005 , G03F7/162
摘要： Methods of dispensing process liquid to provide a uniform layer of the liquid on a surface are disclosed in accordance with the present invention. The methods include dispensing a process liquid on the surface and rotating the surface at a first speed to distribute an effective amount of the process liquid to substantially wet the surface. The method further includes rotating the surface at a second speed to distribute an effective amount of the process liquid to produce a layer of the process liquid on the surface. In a preferred embodiment or dispensing photoresist onto the surface of a semiconductor wafer, the method includes rotating the wafer at the first speed prior to dispensing the photoresist onto the surface. The preferred method further includes decelerating the wafer from the first to the second speed during the dispensing of the photoresist and terminating the dispensing process after the second speed is reached.
摘要翻译：根据本发明公开了分配处理液体以在表面上提供均匀的液体层的方法。所述方法包括在表面上分配处理液体并以第一速度旋转表面以分配有效量的处理液体以基本上润湿表面。该方法还包括以第二速度旋转表面以分配有效量的处理液体以在表面上产生处理液体层。在优选实施例中或将光刻胶分配到半导体晶片的表面上，该方法包括在将光致抗蚀剂分配到表面之前以第一速度旋转晶片。优选的方法还包括在分配光致抗蚀剂期间将晶片从第一速度减速至第二速度，并且在达到第二速度之后终止分配过程。

5. 发明授权

US07605350B2 System for two-step resist soft bake to prevent ILD outgassing during semiconductor processing 失效
标题翻译：用于两步抗蚀软烘烤的系统，以防止半导体加工过程中的ILD脱气
公开(公告)号：US07605350B2
公开(公告)日：2009-10-20
申请号：US11215938
申请日：2005-08-31
申请人： Paul Shirley , Gordon Haller
发明人： Paul Shirley , Gordon Haller
IPC分类号： H05B3/68 , A01H5/02
CPC分类号： H01L21/0273 , G03F7/168
摘要： In general, the system provides for soft baking a semiconductor wafer so that photoresist layers on the wafer are free of surface voids or craters. In particular, the system provides for manufacturing a semiconductor wafer having no photoresist craters at the completion of a two-step post-apply resist bake (soft bake) in the fabrication of an integrated circuit. In the system, the semiconductor wafer is coated with resist and then baked at both a low-bake temperature and a high-bake temperature. It is theorized that the lower temperature bake either hardens the resist layer before trapped air expands through the resist or displaces the trapped air while the resist layer remains fluid and returns to its conformal shape.
摘要翻译：通常，该系统提供对半导体晶片的软烘烤，使得晶片上的光致抗蚀剂层没有表面空隙或凹坑。特别地，在集成电路的制造中，该系统提供制造在完成两步后施加抗蚀剂烘烤（软烘烤）时没有光刻胶凹坑的半导体晶片。在该系统中，半导体晶片被涂覆有抗蚀剂，然后在低烘烤温度和高烘烤温度下烘烤。理论上，低温烘烤在被捕获的空气膨胀通过抗蚀剂之前硬化抗蚀剂层，或者使被捕获的空气移位，同时抗蚀剂层保持流体并恢复其适形形状。

6. 发明申请

US20070197050A1 Systems and methods for manipulating liquid films on semiconductor substrates 失效
标题翻译：用于操纵半导体衬底上的液膜的系统和方法
公开(公告)号：US20070197050A1
公开(公告)日：2007-08-23
申请号：US11359730
申请日：2006-02-22
申请人： Paul Shirley , Hiroyuki Mori
发明人： Paul Shirley , Hiroyuki Mori
IPC分类号： H01L21/00
CPC分类号： H01L21/6715
摘要： A semiconductor substrate undergoing processing to fabricate integrated circuit devices thereon is spun about a rotational axis while introducing liquid onto a surface of the substrate. An annular-shaped sheet of liquid is formed on the surface, the sheet of liquid having an inner diameter defining a liquid-free void. The size of a diameter of the void is reduced by manipulation of the annular-shaped sheet of liquid. The void may then be enlarged until the surface is substantially dry. The annular-shaped sheet of liquid may be formed and altered by selectively moving a contact area on the surface of the substrate on which the liquid is introduced. Systems for processing a substrate and configured to deposit and manipulate a sheet of liquid thereon are also disclosed.
摘要翻译：在其上制造集成电路器件的处理的半导体衬底围绕旋转轴旋转，同时将液体引入到衬底的表面上。在表面上形成环状的液体片，该液体片具有限定无液体空隙的内径。通过操作环形片状液体来减小空隙直径的大小。然后可以扩大空隙，直到表面基本上干燥。可以通过选择性地移动在其上引入液体的基板的表面上的接触区域来形成和改变环形片状液体。还公开了用于处理基板并且被配置为在其上沉积和操纵一片液体的系统。

7. 发明申请

US20070065575A1 Method for in situ photoresist thickness characterization 审中-公开
标题翻译：原位光刻胶厚度表征方法
公开(公告)号：US20070065575A1
公开(公告)日：2007-03-22
申请号：US11599043
申请日：2006-11-13
申请人： Paul Shirley , Craig Hickman
发明人： Paul Shirley , Craig Hickman
IPC分类号： C23C16/52 , B05D3/12
CPC分类号： G03F7/162 , G03F7/70608
摘要： An in situ photoresist thickness characterization process and apparatus characterizes a photoresist process used for processing a semiconductor wafer. Photoresist is dispensed on a spinning semiconductor wafer as part of the characterization process. The thickness of the photoresist is monitored at a plurality of locations on the spinning semiconductor wafer at specific time intervals while the photoresist flows across the wafer. The thicknesses are recorded from the plurality of locations and for the specific time intervals for use in making process control decisions. A semiconductor process for coating a semiconductor wafer according to characteristics derived from the characterization process deposits photoresist on a wafer and spin-coats the wafer according to the photoresist process characterization process.
摘要翻译：原位光刻胶厚度表征方法和装置表征用于处理半导体晶片的光刻胶工艺。作为表征过程的一部分，光致抗蚀剂被分配在旋转的半导体晶片上。光致抗蚀剂的厚度在纺丝半导体晶片上的多个位置以特定的时间间隔被监测，同时光致抗蚀剂流过晶片。从多个位置和特定时间间隔记录厚度，以用于制造过程控制决定。根据从特征化处理得到的特性来涂覆半导体晶片的半导体工艺将光致抗蚀剂沉积在晶片上，并根据光致抗蚀剂工艺表征工艺旋转涂覆晶片。

8. 发明申请

US20070056513A1 System for situ photoresist thickness characterizaton 审中-公开
标题翻译：系统原位光刻胶厚度特征
公开(公告)号：US20070056513A1
公开(公告)日：2007-03-15
申请号：US11599221
申请日：2006-11-13
申请人： Paul Shirley , Craig Hickman
发明人： Paul Shirley , Craig Hickman
IPC分类号： B05C11/00 , B05C13/02 , C23C16/52 , B05D3/12
CPC分类号： G03F7/162 , G03F7/70608
摘要： An in situ photoresist thickness characterization process and apparatus characterizes a photoresist process used for processing a semiconductor wafer. Photoresist is dispensed on a spinning semiconductor wafer as part of the characterization process. The thickness of the photoresist is monitored at a plurality of locations on the spinning semiconductor wafer at specific time intervals while the photoresist flows across the wafer. The thicknesses are recorded from the plurality of locations and for the specific time intervals for use in making process control decisions. A semiconductor process for coating a semiconductor wafer according to characteristics derived from the characterization process deposits photoresist on a wafer and spin-coats the wafer according to the photoresist process characterization process.
摘要翻译：原位光刻胶厚度表征方法和装置表征用于处理半导体晶片的光刻胶工艺。作为表征过程的一部分，光致抗蚀剂被分配在旋转的半导体晶片上。光致抗蚀剂的厚度在纺丝半导体晶片上的多个位置以特定的时间间隔被监测，同时光致抗蚀剂流过晶片。从多个位置和特定时间间隔记录厚度，以用于制造过程控制决定。根据从特征化处理得到的特性来涂覆半导体晶片的半导体工艺将光致抗蚀剂沉积在晶片上，并根据光致抗蚀剂工艺表征工艺旋转涂覆晶片。

9. 发明申请

US20070026134A1 Method for in situ photoresist thickness characterization 审中-公开
公开(公告)号：US20070026134A1
公开(公告)日：2007-02-01
申请号：US11519522
申请日：2006-09-12
申请人： Paul Shirley , Craig Hickman
发明人： Paul Shirley , Craig Hickman
IPC分类号： C23C14/54 , B05D3/12 , B05D3/02
CPC分类号： G03F7/162 , G03F7/70608
摘要： An in situ photoresist thickness characterization process and apparatus characterizes a photoresist process used for processing a semiconductor wafer. Photoresist is dispensed on a spinning semiconductor wafer as part of the characterization process. The thickness of the photoresist is monitored at a plurality of locations on the spinning semiconductor wafer at specific time intervals while the photoresist flows across the wafer. The thicknesses are recorded from the plurality of locations and for the specific time intervals for use in making process control decisions. A semiconductor process for coating a semiconductor wafer according to characteristics derived from the characterization process deposits photoresist on a wafer and spin-coats the wafer according to the photoresist process characterization process.

10. 发明申请

US20050164134A1 Method and apparatus for a two-step resist soft bake to prevent ILD outgassing during semiconductor processing 有权
标题翻译：用于两步抗蚀剂软烘烤的方法和装置，以防止半导体加工过程中的ILD脱气
公开(公告)号：US20050164134A1
公开(公告)日：2005-07-28
申请号：US10765481
申请日：2004-01-27
申请人： Paul Shirley , Gordon Haller
发明人： Paul Shirley , Gordon Haller
IPC分类号： G03C5/00 , G03F7/16 , H01L21/027 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： H01L21/0273 , G03F7/168
摘要： A semiconductor wafer having no photoresist craters at the completion of a two-step post-apply resist bake (soft bake) in the fabrication of an integrated circuit. A process and method for soft baking the semiconductor wafer so that photoresist layers are free of surface voids or craters. The semiconductor wafer is coated with resist and then baked at both a low-bake temperature and a high-bake temperature. It is theorized that the lower temperature bake either hardens the resist layer before trapped air expands through the resist or displaces the trapped air while the resist layer remains fluid and returns to its conformal shape.
摘要翻译：在制造集成电路的两步施加后抗蚀剂烘烤（软烘烤）完成时，没有光刻胶凹坑的半导体晶片。一种用于软化烘烤半导体晶片使得光致抗蚀剂层没有表面空隙或凹坑的方法和方法。半导体晶片用抗蚀剂涂覆，然后在低烘烤温度和高烘烤温度下烘烤。理论上，低温烘烤在被捕获的空气膨胀通过抗蚀剂之前硬化抗蚀剂层，或者使被捕获的空气移位，同时抗蚀剂层保持流体并恢复其适形形状。

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