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1. 发明申请

US20070090858A1 Inverter circuit having a feedback switch and methods corresponding thereto 失效
标题翻译：具有反馈开关的逆变器电路及其对应的方法
公开(公告)号：US20070090858A1
公开(公告)日：2007-04-26
申请号：US11259480
申请日：2005-10-26
申请人： Paul Brazis , Daniel Gamota , Kin Tsui , John Szczech , Jie Zhang
发明人： Paul Brazis , Daniel Gamota , Kin Tsui , John Szczech , Jie Zhang
IPC分类号： H03K19/094
CPC分类号： H03K19/01721 , H03K19/09441
摘要： An inverter circuit (500) having a drive transistor (102) that operably couples to a voltage bias input (101) (and where that drive transistor controls the inverter circuit output by opening and closing a connection between the output (105) and ground (104)) is further operably coupled to a feedback switch (401). In a preferred approach the feedback switch is itself also operably coupled to the voltage bias input and the output and preferably serves, when the drive transistor is switched “off,” to responsively couple the voltage bias input to the drive transistor in such a way as to cause a gate terminal of the drive transistor to have its polarity relative to a source terminal of the drive transistor reversed and hence permit the inverter circuit to operate across a substantially full potential operating range of the drive transistor.
摘要翻译：一种具有可操作地耦合到电压偏置输入（101）的驱动晶体管（102）的逆变器电路（500），并且其中该驱动晶体管通过打开和关闭输出（105）和地（ 104））进一步可操作地耦合到反馈开关（401）。在优选的方法中，反馈开关本身也可操作地耦合到电压偏置输入端和输出端，并且优选地在驱动晶体管被切断时关断，以将电压偏置输入以驱动晶体管的方式耦合到驱动晶体管，以使驱动晶体管的栅极端子相对于驱动晶体管的源极端子的极性相反，从而允许逆变器电路在驱动晶体管的基本上全部的电位工作范围内工作。

2. 发明申请

US20070094624A1 Semiconductor device and method for providing a reduced surface area electrode 失效
标题翻译：用于提供减小的表面积电极的半导体器件和方法
公开(公告)号：US20070094624A1
公开(公告)日：2007-04-26
申请号：US11258634
申请日：2005-10-26
申请人： Paul Brazis , Daniel Gamota , Krishna Kalyanasundaram , Jie Zhang
发明人： Paul Brazis , Daniel Gamota , Krishna Kalyanasundaram , Jie Zhang
IPC分类号： G06F17/50
CPC分类号： H01L29/41733 , H01L27/1292 , H01L51/0022 , H01L51/055 , H01L51/102 , H01L2924/19043 , H01L2924/30105
摘要： An apparatus (200) such as a semiconductor device comprises a gate electrode (201) and at least a first electrode (202). The first electrode preferably has an established perimeter that at least partially overlaps with respect to the gate electrode to thereby form a corresponding transistor channel. In a preferred approach the first electrode has a surface area that is reduced notwithstanding the aforementioned established perimeter. This, in turn, aids in reducing any corresponding parasitic capacitance. This reduction in surface area may be accomplished, for example, by providing openings (203) through certain portions of the first electrode.
摘要翻译：诸如半导体器件的装置（200）包括栅电极（201）和至少第一电极（202）。第一电极优选地具有与栅电极至少部分重叠的确定的周边，从而形成对应的晶体管沟道。在优选的方法中，尽管具有上述建立的周长，第一电极具有减小的表面积。这又有助于减少任何相应的寄生电容。表面积的这种减小可以例如通过提供通过第一电极的某些部分的开口（203）来实现。

3. 发明申请

US20070090950A1 Containment mechanism manipulation responsive electrical circuit power usage apparatus and method 失效
标题翻译：遏制机制操纵响应电路的电力使用装置和方法
公开(公告)号：US20070090950A1
公开(公告)日：2007-04-26
申请号：US11259581
申请日：2005-10-26
申请人： Mansour Toloo , Hakeem Adewole , Paul Brazis , Daniel Gamota , Julius Gyorfi , Swee Mok , John Szczech , Jie Zhang
发明人： Mansour Toloo , Hakeem Adewole , Paul Brazis , Daniel Gamota , Julius Gyorfi , Swee Mok , John Szczech , Jie Zhang
IPC分类号： G08B13/14 , G08B21/00
CPC分类号： G08B13/08
摘要： An object (201) (such as a containment mechanism) supports both a functional electrical circuit (203) and an electrical circuit (202) to which the functional electrical circuit is responsive. In a preferred approach the functional electrical circuit has both a low power state of operation and a higher power state of operation. Upon detecting (104) that an area of connectivity of the electrical circuit has been severed (via, for example, corresponding manipulation of the object itself), the functional electrical circuit responsively operates (106) using the higher power state of operation.
摘要翻译：物体（201）（诸如容纳机构）支撑功能电路（203）和功能电路响应于的电路（202）。在优选的方法中，功能电路具有低功率操作状态和较高功率操作状态。在检测（104）电路的连通性区域已被切断（通过例如对象本身的对应操作）时，功能电路使用更高功率的操作状态来响应地操作（106）。

4. 发明申请

US20070090869A1 Combined power source and printed transistor circuit apparatus and method 审中-公开
标题翻译：组合电源和印刷晶体管电路设备及方法
公开(公告)号：US20070090869A1
公开(公告)日：2007-04-26
申请号：US11259481
申请日：2005-10-26
申请人： Hakeem Adewole , Paul Brazis , Gabriela Dyrc , Daniel Gamota , Jie Zhang
发明人： Hakeem Adewole , Paul Brazis , Gabriela Dyrc , Daniel Gamota , Jie Zhang
IPC分类号： H03K17/56
CPC分类号： H01L23/58 , H01L25/16 , H01L27/1292 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A power source (201) and a printed transistor circuit (202) are combined with one another in a stacked and integral configuration. In a preferred though optional configuration this combination can further comprise a substrate (200) of choice. The power source can comprise a technology of choice such as, but not limited, to, a battery or a photovoltaic element. These elements can be combined (104) using a joining technology of choice such as, but not limited to, laminating these elements together or printing one upon the other.
摘要翻译：电源（201）和印刷晶体管电路（202）以堆叠且一体的结构相互组合。在优选的但可选配置中，该组合可进一步包括可选择的基底（200）。电源可以包括诸如但不限于电池或光电元件的选择技术。这些元件可以使用选择的连接技术（104）组合（104），例如但不限于将这些元件层叠在一起或彼此印刷。

5. 发明申请

US20060003475A1 Semiconductor devices shared element(s) apparatus and method 失效
标题翻译：半导体器件共享元件装置和方法
公开(公告)号：US20060003475A1
公开(公告)日：2006-01-05
申请号：US10881389
申请日：2004-06-30
申请人： Hakeem Adewole , Paul Brazis , Daniel Gamota , Jerzy Wielgus , Jie Zhang
发明人： Hakeem Adewole , Paul Brazis , Daniel Gamota , Jerzy Wielgus , Jie Zhang
IPC分类号： H01L21/00
CPC分类号： H01L51/0097 , H01L27/283 , H01L51/0004 , Y02E10/549
摘要： Two or more semiconductor devices (21 and 22) are formed on a substrate (20) and are each comprised of a plurality of printed components (23 and 24). At least one such printed component (25) is shared by both such semiconductor devices.
摘要翻译：两个或多个半导体器件（21和22）形成在衬底（20）上并且各自包括多个印刷部件（23和24）。至少一个这样的印刷部件（25）由这两个半导体器件共用。

6. 发明申请

US20050189968A1 Organic semiconductor inverting circuit 失效
标题翻译：有机半导体反相电路
公开(公告)号：US20050189968A1
公开(公告)日：2005-09-01
申请号：US10788627
申请日：2004-02-27
申请人： Paul Brazis , Hakeem Adewole , Daniel Gamota , Jie Zhang
发明人： Paul Brazis , Hakeem Adewole , Daniel Gamota , Jie Zhang
IPC分类号： G03G15/04 , H03B1/00 , H03K3/00 , H03K19/08
CPC分类号： H03K19/08
摘要： An organic semiconductor inverting circuit includes at least three organic transistors, an output terminal (110, 210, 310, 410), a reference supply voltage input (115, 215, 315, 415), a first positive supply voltage input (120, 220, 320, 420), and a negative supply voltage input (125, 225, 325, 425). One of the three organic transistors is an input transistor having a gate to which is coupled an input terminal (105, 205, 305, 405). The output terminal (110, 210, 310, 410) is coupled to a first electrode of at least one of the at least three organic transistors.
摘要翻译：有机半导体反相电路包括至少三个有机晶体管，输出端（110,210,310,410），参考电源电压输入（115,215,315,415），第一正电源电压输入端（120,220），320,420）和负电源电压输入（125,225,325,425）。三个有机晶体管中的一个是具有与输入端（105,205,305,405）耦合的栅极的输入晶体管。输出端子（110,210,310,410）耦合到至少三个有机晶体管中的至少一个的第一电极。

7. 发明授权

US06870181B2 Organic contact-enhancing layer for organic field effect transistors 失效
标题翻译：有机场效应晶体管的有机接触增强层
公开(公告)号：US06870181B2
公开(公告)日：2005-03-22
申请号：US10187516
申请日：2002-07-02
申请人： Jie Zhang , Paul Brazis , Daniel Gamota , Krishna Kalyanasundaram , Steven Scheifers , Jerzy Wielgus , Abhijit Roy Chowdhuri
发明人： Jie Zhang , Paul Brazis , Daniel Gamota , Krishna Kalyanasundaram , Steven Scheifers , Jerzy Wielgus , Abhijit Roy Chowdhuri
IPC分类号： H01L21/00 , H01L35/24 , H01L51/00 , H01L51/40
CPC分类号： H01L51/0545 , H01L51/0021
摘要： An organic field effect transistor utilizes a bifunctional contact-enhancing agent at various interfaces to improve carrier mobility through the organic semiconductor layer, to improve carrier injection, and to enhance adhesion via a bifunctional mechanism. The contact-enhancing agent can be situated between the gate electrode (2) and the dielectric layer (3) to form a chemical or physical bond between the gate electrode and the dielectric layer. It can also be situated between the dielectric layer and the organic semiconducting layer (4), or between the source and drain electrodes (5, 6) and the organic semiconducting layer.
摘要翻译：有机场效应晶体管在各种界面处利用双功能接触增强剂来改善载流子迁移率通过有机半导体层，改善载流子注入，并通过双功能机制增强粘附力。接触增强剂可以位于栅极（2）和电介质层（3）之间，以在栅电极和电介质层之间形成化学或物理结合。它也可以位于介电层和有机半导体层（4）之间，或位于源极和漏极（5,6）和有机半导体层之间。

8. 发明申请

US20130037770A1 REMOVABLE BARRIER FOR LOCATION ON AN UPPER PORTION OF A WALL 有权
标题翻译：用于位于墙壁上部的可拆卸障碍物
公开(公告)号：US20130037770A1
公开(公告)日：2013-02-14
申请号：US13580345
申请日：2011-02-24
申请人： Emilio Rosati , Paul Brazis
发明人： Emilio Rosati , Paul Brazis
IPC分类号： E04H17/16 , E04H17/20 , E04G21/32
CPC分类号： E04G21/3223 , E04G21/3214 , E04G21/3219 , E04G2005/148 , E04H17/163
摘要： This invention relates to a barrier for fixing to an upper portion of a wall, the barrier comprising fixing means securable to the wall, and a barrier held by the fixing means that locates above the upper portion of the wall, wherein the barrier is removable from the fixing means to allow access to the upper portion of the wall as required. In one aspect, at least a portion of the barrier is moveable relative to a remainder of the barrier and between a first position where it is located above an upper edge of the wall, and a second position where access is then provided to the upper wall edge above which the movable barrier portion was previously positioned.
摘要翻译：本发明涉及一种用于固定到壁的上部的屏障，该屏障包括固定在壁上的固定装置，以及由该固定装置保持的屏障，其位于壁的上部上方，其中该屏障可从所述固定装置根据需要允许进入所述壁的上部。在一个方面，阻挡物的至少一部分相对于阻挡层的其余部分和位于壁的上边缘之上的第一位置和第二位置之间是可移动的，在第二位置，边缘之上，可动挡板部分预先定位在其上方。

9. 发明申请

US20060121182A1 Method to facilitate the printing of electronic components 审中-公开
标题翻译：促进印刷电子元器件的方法
公开(公告)号：US20060121182A1
公开(公告)日：2006-06-08
申请号：US11004080
申请日：2004-12-03
申请人： Krishna Kalyanasundaram , Paul Brazis , Daniel Gamota , Jie Zhang
发明人： Krishna Kalyanasundaram , Paul Brazis , Daniel Gamota , Jie Zhang
IPC分类号： B05D5/12
CPC分类号： H05K3/12 , H05K1/16 , H05K3/0005 , H05K3/1216 , H05K3/1241 , H05K2203/163
摘要： Data regarding printing instructions for an active electronic component are provided (11). These printing instructions will typically comprise instructions regarding the location, geometry, size, orientation, and functional inks used for various component layers as correspond to the electronic component, and are without reference to a specific printing system. This data is then modified (12) as a function of one or more operational proclivities of a particular high throughput additive printing system to provide modified instructions that, when employed to effect the printing of the active electronic component, will improve the resultant yield as compared to the unmodified data.
摘要翻译：提供关于有源电子部件的打印指令的数据（11）。这些打印指令通常将包括关于与电子部件对应的各种部件层使用的位置，几何形状，尺寸，取向和功能油墨的指令，并且不参考特定的打印系统。随后，将该数据作为特定高通量添加剂打印系统的一个或多个操作方式的函数进行修改（12），以提供修改的指令，当被用于实现有源电子部件的打印时，将提高合成产率到未修改的数据。

10. 发明授权

US06905908B2 Method of fabricating organic field effect transistors 失效
公开(公告)号：US06905908B2
公开(公告)日：2005-06-14
申请号：US10329595
申请日：2002-12-26
申请人： Jie Zhang , Daniel Gamota , Min-Xian Zhang , Paul Brazis , Krishna Kalyanasundaram
发明人： Jie Zhang , Daniel Gamota , Min-Xian Zhang , Paul Brazis , Krishna Kalyanasundaram
IPC分类号： H01L51/00 , H01L51/30 , H01L51/40 , H01L5/40
CPC分类号： H01L51/0516 , H01L51/0024 , H01L51/0036 , H01L51/0051 , H01L51/0078 , H01L51/0084
摘要： Organic field effect transistors (OFETs) can be created rapidly and at low cost on organic films by using a multilayer film (202) that has an electrically conducting layer (204, 206) on each side of a dielectric core. The electrically conducting layer is patterned to form gate electrodes (214), and a polymer film (223) is attached onto the gate electrode side of the multilayer dielectric film, using heat and pressure (225) or an adhesive layer (228). A source electrode and a drain electrode (236) are then fashioned on the remaining side of the multilayer dielectric film, and an organic semiconductor (247) is deposited over the source and drain electrodes, so as to fill the gap between the source and drain electrodes and touch a portion of the dielectric film to create an organic field effect transistor.

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