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    • 1. 发明授权
    • Method for removing molding residues in the fabrication of plastic packages for semiconductor devices
    • 用于在半导体器件的塑料封装的制造中去除模制残留物的方法
    • US06468356B1
    • 2002-10-22
    • US09535322
    • 2000-03-27
    • Paolo CremaRoberto TizianiMarkus Guggenmos
    • Paolo CremaRoberto TizianiMarkus Guggenmos
    • B08B704
    • B29C37/02B08B7/0042H01L21/4839
    • A method for removing residues of molding material from metal parts of plastic packages of semiconductor devices includes applying first and second pulsed laser radiations to at least one surface region of a metal part covered with residues of molding material. The first pulsed laser radiation has a first wavelength that is absorbed by residues of molding material having a thickness greater than a prescribed thickness. The intensity and the duration of the first pulsed laser radiation causes the residues to be directly attacked. The second pulsed laser radiation has a second wavelength so that residues of molding material having a thickness less than the prescribed value are at least partially transparent and the metal parts are at least partially absorbent. The intensity and the duration of the second pulsed laser radiation causes the formation of plasma at the point of impact with the metal part.
    • 一种用于从半导体器件的塑料封装的金属部件去除模制材料的残留物的方法包括将第一和第二脉冲激光辐射施加到覆盖有模制材料的残余物的金属部件的至少一个表面区域上。 第一脉冲激光辐射具有被厚度大于规定厚度的成型材料的残留物吸收的第一波长。 第一脉冲激光辐射的强度和持续时间使残留物直接受到攻击。 第二脉冲激光辐射具有第二波长,使得具有小于规定值的厚度的成型材料的残留物至少部分透明,并且金属部件至少部分吸收。 第二脉冲激光辐射的强度和持续时间导致在与金属部件的撞击点处形成等离子体。