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1. 发明授权

US09593709B2 Anchoring device for a transmission cable 有权
标题翻译：传输电缆锚固装置
公开(公告)号：US09593709B2
公开(公告)日：2017-03-14
申请号：US13254554
申请日：2009-03-04
申请人： Marie-Pierre Joly
发明人： Pascal Michel Joly
IPC分类号： F16C1/10 , F16C1/26
CPC分类号： F16C1/102 , F16C1/262 , Y10T74/2045
摘要： An anchoring device for anchoring a sheath of a transmission cable to a bracket may include a sleeve coaxially connectable to the sheath of the cable, the sleeve having a plurality of tangs extending longitudinally and arranged in a circular configuration, the tangs each having a transversal surface defining a wall of a circumferential groove, the groove being able to receive a bracket and to secure the sheath of the cable from longitudinal movements relative to the bracket, the anchoring device may include a ring longitudinally movable relative to the sleeve between first and second longitudinal positions, and wherein the ring is able to force the tangs to move inward upon movement of the ring from the first to the second longitudinal position such that the diameter of the wall of the circumferential groove is decreased.
摘要翻译：用于将传动电缆的护套固定到支架的锚固装置可以包括同轴地连接到电缆的护套的套筒，套筒具有纵向延伸并且以圆形构造布置的多个柄脚，每个脚都具有横向表面限定圆周凹槽的壁，所述凹槽能够容纳支架并且将所述电缆的护套固定在相对于所述托架的纵向运动中，所述锚定装置可以包括相对于所述套筒在第一和第二纵向并且其中当所述环从所述第一纵向位置移动到所述第二纵向位置时，所述环能够迫使所述柄脚向内移动，使得所述周向槽的壁的直径减小。

2. 发明申请

US20130344532A1 Method For Observing A Sample 有权
标题翻译：观察样品的方法
公开(公告)号：US20130344532A1
公开(公告)日：2013-12-26
申请号：US14000813
申请日：2012-02-16
申请人： Mathieu Dupoy , Pierre Joly , Frédéric Mallard , Pierre Marcoux , Raphaël Mathey , Armelle Novelli-Rousseau
发明人： Mathieu Dupoy , Pierre Joly , Frédéric Mallard , Pierre Marcoux , Raphaël Mathey , Armelle Novelli-Rousseau
IPC分类号： C12Q1/04
CPC分类号： C12Q1/04 , G01N21/6486 , G01N21/65 , G01N2021/035
摘要： A method for observing a sample is provided. The method includes the steps of: a) providing a volume (G, V) of a substantially transparent medium having a first refractive index (nint) and having a first surface (S1) that is convex, rounded, or faceted, and a second substantially planar surface (S2), the first surface separating the volume from a surrounding medium (MA) having a second refractive index (next) that is lower than the first index, the sample to be observed being contained inside the volume or being deposited on the first surface; b) observing the sample through the second substantially planar surface; and c) determining the presence of a substance or an object in the sample by detection during step b), a ring of light that correlates with the volume.
摘要翻译：提供了一种用于观察样品的方法。该方法包括以下步骤：a）提供具有第一折射率（nint）并且具有凸起，圆形或小面的第一表面（S1）的基本上透明的介质的体积（G，V），以及第二基本平坦的表面（S2），第一表面将体积与具有低于第一指数的第二折射率（next）的周围介质（MA）分开，待观察的样品被容纳在体积内或沉积在第一面; b）通过第二基本平坦的表面观察样品; 以及c）通过在步骤b）期间通过检测与体积相关的光环来确定样品中物质或物体的存在。

3. 发明授权

US08246184B2 Production of cavities that can be filled with a fluid material in an optical microtechnological component 有权
标题翻译：生产可以在光学微技术部件中填充流体材料的空腔
公开(公告)号：US08246184B2
公开(公告)日：2012-08-21
申请号：US12162841
申请日：2007-02-06
申请人： Jean-Charles Souriau , Nicolas Sillon , Jean-Pierre Joly
发明人： Jean-Charles Souriau , Nicolas Sillon , Jean-Pierre Joly
IPC分类号： G02B27/00
CPC分类号： G02B5/23 , G02B5/201 , G02C7/101 , G02C2202/18
摘要： A novel method makes it possible to form cavities intended to contain a liquid with determined optical properties within a film for optical use. The walls (38) of the cavities (40) are formed by plasma etching of a layer of transparent or light absorbent material (30, 34) transferred onto a microtechnological substrate, the walls (38) having a structured profile in order to limit the parasitic phenomena of light diffusion and diffraction.
摘要翻译：一种新颖的方法使得可以形成旨在含有在用于光学用途的膜内具有确定的光学性质的液体的空腔。空腔（40）的壁（38）通过等离子体蚀刻形成，其中转移到微技术基板上的透明或光吸收材料层（30,34），壁（38）具有结构化轮廓以限制光扩散和衍射的寄生现象。

4. 发明授权

US08048766B2 Integrated circuit on high performance chip 有权
标题翻译：集成电路在高性能芯片上
公开(公告)号：US08048766B2
公开(公告)日：2011-11-01
申请号：US10561299
申请日：2004-06-23
申请人： Jean-Pierre Joly , Laurent Ulmer , Guy Parat
发明人： Jean-Pierre Joly , Laurent Ulmer , Guy Parat
IPC分类号： H01L21/30 , H01L21/46 , H01L29/06 , H01L27/08 , H01L21/02
CPC分类号： B81C1/00253 , H01L21/2007 , H01L21/8221 , H01L25/16 , H01L25/50 , H01L27/0688 , H01L28/10 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a die containing an integrated circuit, including active components and passive components, includes producing a first substrate containing at least one active component of active components and a second substrate containing critical components of the passive components, such as perovskites or MEMS, and bonding the two substrates by a layer transfer. The method provides an improved monolithic integration of devices such as MEMS with transistors.
摘要翻译：制造包含有源元件和无源元件的集成电路的管芯的方法包括制备含有至少一种活性组分的活性组分的第一衬底和含有诸如钙钛矿或MEMS的无源组分的关键组分的第二衬底，并通过层转移结合两个衬底。该方法提供了诸如MEMS与晶体管的器件的改进的单片集成。

5. 发明授权

US07763915B2 Three-dimensional integrated C-MOS circuit and method for producing same 有权
标题翻译：三维集成C-MOS电路及其制造方法
公开(公告)号：US07763915B2
公开(公告)日：2010-07-27
申请号：US11654660
申请日：2007-01-18
申请人： Jean-Pierre Joly , Olivier Faynot , Laurent Clavelier
发明人： Jean-Pierre Joly , Olivier Faynot , Laurent Clavelier
IPC分类号： H01L29/80
CPC分类号： H01L27/0688 , H01L21/8221
摘要： The three-dimensional integrated CMOS circuit is formed in a hybrid substrate. n-MOS type transistors are formed, at a bottom level, in a first semi-conducting layer of silicon having a (100) orientation, which layer may be tension strained. p-MOS transistors are formed, at a top level, in a preferably monocrystalline and compression strained second semi-conducting layer of germanium having a (110) orientation. The second semi-conducting layer is transferred onto a first block in which the n-MOS transistors were previously formed, and the p-MOS transistors are then formed.
摘要翻译：三维集成CMOS电路形成在混合基板中。在具有（100）取向的第一半导体硅层中，在底层形成n-MOS型晶体管，该层可以是张力应变的。在顶级，在具有（110）取向的锗的优选单晶和压缩应变的第二半导电层中形成p-MOS晶体管。第二半导电层被转移到其中预先形成n-MOS晶体管的第一块，然后形成p-MOS晶体管。

6. 发明申请

US20090138441A1 Additional Content Information 审中-公开
标题翻译：附加内容信息
公开(公告)号：US20090138441A1
公开(公告)日：2009-05-28
申请号：US11992568
申请日：2006-11-08
申请人： Andrew Valentine , David Poupon , Franck Bachet , Pierre Joly , Laurent Chauvier , Guillaume De Saint Marc
发明人： Andrew Valentine , David Poupon , Franck Bachet , Pierre Joly , Laurent Chauvier , Guillaume De Saint Marc
IPC分类号： G06F17/30
CPC分类号： H04N7/17318 , G06F16/951 , H04N21/254 , H04N21/4722 , H04N21/4828
摘要： A method for identifying additional content information to a content consumer, is disclosed. The additional content information relates to a content item selected for consumption by the content consumer. The method comprises: receiving data published by a content provider (203,205), wherein said data describes content information (207) available from said content provider; indexing said data thereby producing indexed data; storing said indexed data in a database (217); receiving a search request from a content consumer, said search request requesting said additional content information; searching said database (217) for data describing said additional content information; and identifying said additional content information by returning data identified during said searching to said content consumer.
摘要翻译：公开了一种用于向内容消费者识别附加内容信息的方法。附加内容信息涉及内容消费者选择消费的内容项。该方法包括：接收由内容提供商（203,205）发布的数据，其中所述数据描述可从所述内容提供商获得的内容信息（207）; 索引所述数据，从而产生索引数据; 将所述索引数据存储在数据库（217）中; 从内容消费者接收搜索请求，所述搜索请求请求所述附加内容信息; 搜索所述数据库（217）用于描述所述附加内容信息的数据; 以及通过将在所述搜索期间识别的数据返回给所述内容消费者来识别所述附加内容信

7. 发明授权

US07153747B2 Method for making a transistor on a SiGe/SOI substrate 有权
标题翻译：在SiGe / SOI衬底上制造晶体管的方法
公开(公告)号：US07153747B2
公开(公告)日：2006-12-26
申请号：US10484056
申请日：2002-07-16
申请人： Jean-Pierre Joly
发明人： Jean-Pierre Joly
IPC分类号： H01L21/336
CPC分类号： H01L29/78684 , H01L21/28255 , H01L29/42384 , H01L29/4908 , H01L29/66621 , H01L29/66772 , H01L29/78618 , H01L29/78636
摘要： A process for producing a MOS-type transistor includes providing a substrate comprising a thin layer of silicon (26), integral with an insulating support (14), and covered with a superficial layer (28) of a semi-conductor material, local etching of the superficial layer to expose the silicon layer in at least one channel region, formation of an insulated gate (50) above the silicon layer in the channel region, and formation of a source and a drain on either side of the channel region, the source and drain extending in the layer of silicon and in the superficial layer.
摘要翻译：一种制造MOS型晶体管的方法，包括提供包括与绝缘支撑件（14）成一体并且被半导体材料的表面层（28）覆盖的薄的薄层（26）的基板，局部蚀刻的表面层以在至少一个沟道区域中露出硅层，在沟道区域中的硅层之上形成绝缘栅极（50），以及在沟道区域的任一侧上形成源极和漏极，源极和漏极在硅层和表面层中延伸。

8. 发明申请

US20060252229A1 Integrated circuit on high performance chip 有权
标题翻译：集成电路在高性能芯片上
公开(公告)号：US20060252229A1
公开(公告)日：2006-11-09
申请号：US10561299
申请日：2004-06-23
申请人： Jean-Pierre Joly , Laurent Ulmer , Guy Parat
发明人： Jean-Pierre Joly , Laurent Ulmer , Guy Parat
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46
CPC分类号： B81C1/00253 , H01L21/2007 , H01L21/8221 , H01L25/16 , H01L25/50 , H01L27/0688 , H01L28/10 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a die containing an integrated circuit, including active components and passive components, includes producing a first substrate containing at least one active component of active components and a second substrate containing critical components of the passive components, such as perovskites or MEMS, and bonding the two substrates by a layer transfer. The method provides an improved monolithic integration of devices such as MEMS with transistors.
摘要翻译：制造包含有源元件和无源元件的集成电路的管芯的方法包括制备含有至少一种活性组分的活性组分的第一衬底和含有诸如钙钛矿或MEMS的无源组分的关键组分的第二衬底，并通过层转移结合两个衬底。该方法提供了诸如MEMS与晶体管的器件的改进的单片集成。

9. 发明授权

US5177350A Image intensifier tube with optimized electrical insulation 失效
标题翻译：具有优化电气绝缘的图像增强器管
公开(公告)号：US5177350A
公开(公告)日：1993-01-05
申请号：US741564
申请日：1991-08-07
申请人： Yves Beauvais , Pierre Joly , Jean-Marie Deon , Maurice Verat
发明人： Yves Beauvais , Pierre Joly , Jean-Marie Deon , Maurice Verat
IPC分类号： H01J29/86 , H01J31/50
CPC分类号： H01J31/501 , H01J29/86
摘要： An apparatus for electrically insulating viewing windows in an image intensifier tube is disclosed. The mechanical parts which are located close to the window are electrically insulated with the metal parts being held at a high voltage and electrically insulated on the outside of the image intensifier by an insulating screen. The insulating screen includes electrically conductive layer 36 and an insulating layer 37 which separates the metal parts 20, 26 from the conductive layer. The conductive layer also forms an equipotential layer which is opposite the metal parts and thereby "freezes" the distribution of the electrical lines of force in the insulating screen 35.
摘要翻译：公开了一种用于图像增强管中的电气绝缘观察窗的装置。位于靠近窗户的机械部件是电绝缘的，金属部件被保持在高电压并且通过绝缘屏蔽在图像增强器的外部电绝缘。绝缘屏幕包括导电层36和将金属部件20,26与导电层分离的绝缘层37。导电层还形成与金属部件相对的等电位层，从而“绝缘”绝缘屏幕35中的电力线的分布。

10. 发明授权

US10161423B2 Fluid power distribution and control system 有权
公开(公告)号：US10161423B2
公开(公告)日：2018-12-25
申请号：US12374454
申请日：2007-07-19
申请人： William Hugh Salvin Rampen , Niall James Caldwell , Uwe Bernhard Pascall Stein , Pierre Joly , Michael Richard Fielding
发明人： William Hugh Salvin Rampen , Niall James Caldwell , Uwe Bernhard Pascall Stein , Pierre Joly , Michael Richard Fielding
IPC分类号： F15B11/17 , F15B11/044 , F15B11/16
摘要： A fluid power system comprises a pump with multiple independently variable outlets (11, 12, 13, 14), each of which is capable of delivering fluid in individually controllable volume units and a plurality of hydraulic loads (15, 16, 18, 20). A system of switching valves is configured to create fluid connections between the pump outlets and the loads. A control system commands both the pump and the switching valves, so as to create valve state combinations to satisfy load conditions as demanded by an operator. The number of pump outlets (11, 12, 13, 14) connected to one or more of the loads (15, 16, 18, 20) is changeable to satisfy the flow required of the load due to the operator demand, each pump outlet being commanded to produce a flow depending on the status of other outlets connected a load to which the outlet is connected and the operator demand for that load.

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