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    • 1. 发明授权
    • Image capturing device
    • 图像捕捉设备
    • US07355640B2
    • 2008-04-08
    • US10648772
    • 2003-08-25
    • Tatsuya TakahashiTohru WatanabeOsamu Tabata
    • Tatsuya TakahashiTohru WatanabeOsamu Tabata
    • H04N9/64
    • H04N5/361H04N5/3655H04N5/3722
    • An image capturing device having a function of clamping an image signal. When the image capturing device is activated, a synchronous signal generating section begins creation of a horizontal synchronous signal, and a counter begins counting a pulse of the horizontal synchronous signal. When the counted value reaches a predetermined value, the clamping capability control section changes the level of a clamp mode signal to an H level. During a period from the start of power supply to the image capturing device to the raising of the level of a clamp mode signal to an H level, a clamp pulse generating section sets a longer width for a clamp pulse than in a normal operation so that a switch element of a clamping circuit remains in an on state in a longer period, whereby a smaller time constant for clamping is set. After elapse of a predetermined period, the switch element is controlled so as to remain in an ON state in a normal period, which is relatively short, whereby a larger time constant for clamping is set. With this arrangement, noise which would be caused with a small clamping time constant is suppressed.
    • 具有夹持图像信号的功能的图像捕获装置。 当图像拍摄装置被激活时,同步信号产生部分开始创建水平同步信号,并且计数器开始计数水平同步信号的脉冲。 当计数值达到预定值时,钳位能力控制部分将钳位模式信号的电平改变为H电平。 在从供电开始到图像捕获装置到将钳位模式信号的电平提高到H电平的期间中,钳位脉冲发生部分将钳位脉冲的宽度设置为比正常操作更长的宽度,使得 钳位电路的开关元件在较长时间内保持导通状态,由此设定较小的钳位时间常数。 在经过预定时间后,开关元件被控制成在相对较短的正常时段内保持在ON状态,由此设定较大的夹紧时间常数。 通过这种布置,可以抑制以小的夹紧时间常数引起的噪声。
    • 9. 发明授权
    • Automatic transmission network restoring system
    • 自动传输网络恢复系统
    • US5875172A
    • 1999-02-23
    • US656096
    • 1996-05-31
    • Osamu Tabata
    • Osamu Tabata
    • H04B10/27H04B10/032H04B10/077H04B10/291H04J3/08H04L12/24H04L12/28H04L12/707H04M3/00H04Q11/04H04J3/14
    • H04J3/085H04J2203/006
    • When a system is designed, a spare path corresponding to a working path set between ADMs is preliminarily determined, and spare path terminating point data is held together with working path terminating point data in a path terminating point control data memory 381. Line checking parts 41a and 41b, when detecting generation of A transmission line trouble in the working path, retrieve spare path terminating point data with reference to path terminating point control data 381 in a path terminating point controller 38, and send out the spare path terminating point data together with working path terminating point data to the path switching part 372. The path switching part 372 instructs an STS path switch 42 to switch the working path terminating point from the prevailing path terminating point over to the spare path terminating point, thus realizing bypassing of the working path via the spare path. After restoration of the trouble path, path switching to the initial state is made.
    • 当设计系统时,预先确定与ADM之间设定的工作路径相对应的备用路径,并且将备用路径终点数据与工作路径终点数据一起保存在路径终点控制数据存储器381中。线路检查部分41a 和41b,当检测到工作路径中的A传输线路故障的产生时,参考路径终点控制器38中的路径终点控制数据381检索备用路径终点数据,并且将备用路径终点数据连同 路径切换部372指示STS路径切换器42将工作路径终止点从占用路径终止点切换到备用路径终止点,从而实现绕过工作路径终止点 路径通过备用路径。 恢复故障路径后,进入路径切换到初始状态。
    • 10. 发明授权
    • Semiconductor pressure sensor
    • 半导体压力传感器
    • US5163329A
    • 1992-11-17
    • US635953
    • 1990-12-28
    • Keiichi ShimaokaOsamu TabataSusumu Sugiyama
    • Keiichi ShimaokaOsamu TabataSusumu Sugiyama
    • G01L9/00
    • G01L9/0055G01L9/0042
    • A semiconductor pressure sensor having a diaphragm formed over the surface of a semiconductor substrate by thin film forming technique is provided. The sensor comprises: a sacrificial film including a vanishable portion covering a pressure receiving region on the major surface of the semiconductor substrate and a diaphragm support portion covering the periphery of the pressure receiving region, the vanishable portion having an isotropic etching property along the pressure receiving region and the diaphragm support portion having an etching-resistant property; an insulation diaphragm film having an etching-resistant property formed on the major surface of the semiconductor substrate over the sacrificial film; at least one etching solution inlet port formed through the insulation diaphragm film to reach the vanishable portion of the sacrificial film; a reference pressure chamber formed by etching and removing at least the vanishable portion of the sacrificial film with an etching solution poured through the inlet port; and at least one strain gauge formed on the insulation diaphragm film in place at the pressure receiving region. The peripheral region of the movable diaphragm can be formed into a flat configuration without any stepped structure. Thus, the semiconductor pressure snesor has an improved characteristics.
    • 提供一种半导体压力传感器,其具有通过薄膜形成技术形成在半导体衬底的表面上的隔膜。 传感器包括:牺牲膜,其包括覆盖半导体基板的主表面上的受压区域的可消除部分和覆盖受压区域的周边的隔膜支撑部分,该可消除部分沿着压力接收具有各向同性蚀刻性质 区域和隔膜支撑部分具有耐蚀性; 在所述牺牲膜上形成在所述半导体衬底的主表面上的具有耐腐蚀性的绝缘膜膜; 至少一个蚀刻溶液入口通过绝缘膜膜形成以到达牺牲膜的可消除部分; 通过蚀刻并去除牺牲膜的可消除部分而形成的参考压力室,其中所述蚀刻溶液通过所述入口浇注; 以及在压力接收区域上形成在绝缘膜片上的至少一个应变仪。 可移动隔膜的周边区域可以形成为没有任何阶梯结构的平坦构造。 因此,半导体压力调节器具有改进的特性。