专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5150142A Device for replenishing fixing solution employed in automatic processor 失效
标题翻译：用于补充自动处理器中使用的定影液的装置
公开(公告)号：US5150142A
公开(公告)日：1992-09-22
申请号：US586454
申请日：1990-09-21
申请人： Yoshihiro Masuda , Akira Murata , Hitoshi Togawa , Nobuaki Miura
发明人： Yoshihiro Masuda , Akira Murata , Hitoshi Togawa , Nobuaki Miura
IPC分类号： B01F3/08 , G03C5/395 , G03D3/06
CPC分类号： G03C5/3958 , G03D3/065
摘要： In a fixer replenishing device employed in an automatic processor, a hardening agent is diluted with water and then mixed with a fixing agent. Since the hardening agent is not directly mixed with the fixing agent, no crystals are deposited.
摘要翻译：在自动处理器中使用的定影剂补充装置中，用水稀释固化剂，然后与固定剂混合。由于硬化剂不与固定剂直接混合，因此不沉积晶体。

2. 发明授权

US4005468A Semiconductor photoelectric device with plural tin oxide heterojunctions and common electrical connection 失效
标题翻译：具有多个锡氧化物异质结和通用电气连接的半导体光电器件
公开(公告)号：US4005468A
公开(公告)日：1977-01-25
申请号：US347427
申请日：1973-04-03
申请人： Shigeru Tanimura , Nobuaki Miura , Mikizo Miyamoto
发明人： Shigeru Tanimura , Nobuaki Miura , Mikizo Miyamoto
IPC分类号： H01L27/146 , H01L31/00 , H01L29/90 , H01L27/14 , H01L31/12 , H01L33/00
CPC分类号： H01L27/14643 , H01L31/00 , Y10S148/02 , Y10S148/051 , Y10S148/106 , Y10S148/12
摘要： A semiconductor photoelectric device of improved photoelectric and rectifying characteristics is provided by first forming a film of electrically insulating material such as silicon dioxide of a substantial thickness on a main surface of a semiconductor substrate so as to have a plurality of portions of said main surface exposed through a corresponding plurality of square or rectangle openings laid out at right angles, said openings being defined by said insulating material film, depositing a tin oxide film on the open areas of the semiconductor substrate, removing a portion of said tin oxide film just overlying the said insulating film for separating the respective barrier regions formed between the tin oxide film and the substrate, and providing a metal layer on said insulating film for connecting the end portion of the tin oxide film of the adjacent barrier regions. The resultant photoelectric device, even if a total light receiving area is increased, shows an improved photoelectric characteristic at low and high illumination.
摘要翻译：通过首先在半导体衬底的主表面上形成诸如二氧化硅等电绝缘材料的膜，从而使得所述主表面的多个部分露出，从而提供改进的光电和整流特性的半导体光电装置通过相应的多个正方形或矩形开口以直角布置，所述开口由所述绝缘材料膜限定，在半导体衬底的开放区域上沉积氧化锡膜，将一部分氧化锡膜刚好覆盖所述绝缘膜用于分离形成在氧化锡膜和衬底之间的各个阻挡区域，并且在所述绝缘膜上提供用于连接相邻阻挡区域的氧化锡膜的端部的金属层。所得到的光电器件即使总光接收面积增加，在低照度和高照度下显示出改进的光电特性。

3. 发明授权

US3952323A Semiconductor photoelectric device 失效
标题翻译：半导体光电器件
公开(公告)号：US3952323A
公开(公告)日：1976-04-20
申请号：US388148
申请日：1973-08-14
申请人： Shigeru Tanimura , Nobuaki Miura , Mikizo Miyamoto
发明人： Shigeru Tanimura , Nobuaki Miura , Mikizo Miyamoto
IPC分类号： H01L31/10 , H01L31/00 , H01L31/113 , H01L29/48 , H01L29/56
CPC分类号： H01L31/1133 , H01L31/00
摘要： A semiconductor photoelectric device of improved photoelectric and rectifying characteristics is provided by first forming a film or silicon dioxide on a main surface, having a crystallographic orientation of (100), of a semiconductor substrate of N-type silicon, the film being formed to a thickness less than 25A., for example, and then further depositing thereon a tin oxide film. It was found that adoption of the abovementioned (100) orientation reduces the reverse saturation current and thus the dark current of the device, with the result that the open voltage of the device is accordingly increased. It was also found that proper choice of specific resistivity of the substrate improves linearity of the photoelectric characteristic.
摘要翻译：通过首先在N型硅的半导体衬底的具有（100）的晶体取向的主表面上形成膜或二氧化硅来提供改进的光电和整流特性的半导体光电装置，该膜形成为例如，厚度小于25A，然后进一步在其上沉积氧化锡膜。已经发现采用上述（100）取向减少了反向饱和电流并因此降低了器件的暗电流，从而相应地增加了器件的开路电压。还发现基板的电阻率的适当选择提高了光电特性的线性。

4. 发明授权

US4016589A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4016589A
公开(公告)日：1977-04-05
申请号：US455008
申请日：1974-03-26
申请人： Shigeru Tanimura , Nobuaki Miura , Osamu Asano
发明人： Shigeru Tanimura , Nobuaki Miura , Osamu Asano
IPC分类号： H01L27/00 , H01L27/144 , H01L29/94 , H01L31/00 , H01L31/06 , H01L27/14 , H01L29/48 , H01L29/56
CPC分类号： H01L31/00 , H01L27/00 , H01L27/1443 , H01L29/94 , H01L31/06 , Y02E10/50
摘要： A semiconductor composite having a rectifying characteristic is provided by first forming an insulating film of a semiconductor compound such as SiO.sub.2 on a semiconductor substrate of N-type Si to a uniform thickness of 27A to 500A, for example, and then further depositing thereon a tin oxide film. The intermediate insulating film between the SnO.sub.2 film and the semiconductor substrate decreases the reverse leakage current, raises the reverse breakdown voltage and makes uniform the reverse breakdown voltage. The semiconductor composite of the present invention, as subjected to a predetermined value of light energy, shows an excellent switching characteristic with respect to a voltage applied to the composite in a reverse direction. Also the semiconductor composite of the present invention, as supplied with a certain value of reverse bias voltage or with no bias, shows an excellent switching characteristic with respect to light energy applied to the composite.
摘要翻译：具有整流特性的半导体复合体通过首先在N型Si的半导体衬底上形成诸如SiO 2的半导体化合物的绝缘膜至例如27A至500A的均匀厚度，然后在其上沉积锡氧化膜。 SnO 2膜和半导体衬底之间的中间绝缘膜减小了反向漏电流，提高了反向击穿电压并使反向击穿电压均匀。本发明的半导体复合体经历预定的光能值后，相对于向反方向施加到复合体上的电压显示出优异的切换特性。此外，本发明的半导体复合材料，当提供有一定反向偏置电压值或无偏压时，表现出相对于施加到复合材料上的光能的优异的开关特性。

5. 发明授权

US06745533B2 Building and construction method therefor 失效
标题翻译：建筑施工方法
公开(公告)号：US06745533B2
公开(公告)日：2004-06-08
申请号：US10202139
申请日：2002-07-24
申请人： Toshio Yamashita , Yoshimasa Tsuchiya , Kazuyuki Nakamura , Kiyoshi Nakamura , Kenji Sekiguchi , Hiroshi Murakami , Nobuaki Miura , Isao Kojima , Sadao Suzuki , Yasuyoshi Shimazaki , Yoichiro Takeuchi , Fumio Fujita
发明人： Toshio Yamashita , Yoshimasa Tsuchiya , Kazuyuki Nakamura , Kiyoshi Nakamura , Kenji Sekiguchi , Hiroshi Murakami , Nobuaki Miura , Isao Kojima , Sadao Suzuki , Yasuyoshi Shimazaki , Yoichiro Takeuchi , Fumio Fujita
IPC分类号： G21C1518
CPC分类号： G21C13/00 , E04B1/16 , Y02E30/40
摘要： The present invention is provided for considerably shortening the construction time of a building that is applied to nuclear power plants. When constructing the building, megablocks having a height that extends to a plurality of floors are produced, and together with combining those megablocks, concrete is poured inside them to form a wall member composed of a megawall structure of steel plate reinforced concrete construction. Alternatively, in addition to the wall megablocks, floor megablocks for forming the floor member of the building are used, and together with combining those megablocks, concrete is poured inside or above them to form a structural member (wall member and floor member) composed of a megawall structure of steel plate reinforced concrete construction.
摘要翻译：提供本发明大大缩短了应用于核电站的建筑物的施工时间。制造建筑物时，产生高度延伸到多层的大块，并结合这些大块砖，将混凝土浇注在其中，形成由钢板钢筋混凝土结构的兆瓦结构构成的壁构件。或者，除了墙壁大块之外，还使用了用于形成建筑物的地板构件的地板大块，并且将这些大块结合在一起，混凝土被浇注在其内部或上方，以形成由以下构成的结构构件（壁构件和地板构件）钢板混凝土结构的兆瓦结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式