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    • 2. 发明申请
    • METHOD FOR EVALUATING SRAM MEMORY CELL AND COMPUTER READABLE RECORDING MEDIUM WHICH RECORDS EVALUATION PROGRAM OF SRAM MEMORY CELL
    • 用于评估SRAM存储单元的方法和计算机可读记录介质,其记录SRAM存储器单元的评估程序
    • US20100115352A1
    • 2010-05-06
    • US12594048
    • 2008-03-10
    • Kazuyuki NAKAMURA
    • Kazuyuki NAKAMURA
    • G11C29/08G06F11/26
    • G11C29/50G11C11/41G11C2029/5002
    • A method for evaluating an SRAM memory cell in which the time required for designing the SRAM memory cell can be shortened by evaluating static noise margin in a shortened time. A recording medium which records an evaluation program is also provided. The coordinate conversion which rotates the coordinate axis by 45 degrees is applied to the input/output characteristic data of a first inverter of the SRAM memory cell, and the first proximity curve function is specified by fitting the input/output characteristic data of the first inverter to the proximity curve. The coordinate conversion which rotates the coordinate axis by 45 degrees is applied to the input/output characteristic data of a second inverter of the SRAM memory cell, and the second proximity curve function is specified by fitting the input/output characteristic data of the second inverter to the proximity curve. A third proximity curve function which is a function generated by mirror-inverting the second proximity curve function with respect to the Y axis is specified, and a static noise margin is specified based on an extremal value of a difference curve function which is the difference between the first proximity curve function and the third proximity curve function.
    • 一种用于评估SRAM存储单元的方法,其中可以通过在缩短的时间内评估静态噪声容限来缩短设计SRAM存储单元所需的时间。 还提供了记录评估程序的记录介质。 将坐标轴旋转45度的坐标转换施加到SRAM存储单元的第一反相器的输入/输出特性数据,并且通过拟合第一反相器的输入/输出特性数据来指定第一接近曲线函数 到接近曲线。 将坐标轴旋转45度的坐标转换施加到SRAM存储单元的第二反相器的输入/输出特性数据,并且通过拟合第二反相器的输入/输出特性数据来指定第二接近曲线函数 到接近曲线。 指定作为通过相对于Y轴反转第二接近曲线函数而产生的函数的第三接近曲线函数,并且基于差分曲线函数的极值来指定静态噪声容限,该差分曲线函数是 第一接近曲线函数和第三接近曲线函数。
    • 3. 发明申请
    • ELECTRONIC CIRCUIT DEVICE
    • 电子电路设备
    • US20100020625A1
    • 2010-01-28
    • US12526576
    • 2008-01-29
    • Hiroyuki MorimotoKazuyuki Nakamura
    • Hiroyuki MorimotoKazuyuki Nakamura
    • G11C7/00G11C8/00G11C5/14
    • G05F1/56
    • To provide an electronic circuit device that can change a characteristic after package sealing and that achieves a reduction in miscellaneous tasks during characteristic setting.The electronic circuit device includes: a burst detecting circuit 7 for detecting, from an input and output terminal 4, a prescribed write activation burst having a length that is larger than or equal to a prescribed time; a signal-pattern detecting circuit 9 for putting a serial interface 8 into an input-enable state in which setting data can be input, when the write activation burst is detected; and a volatile memory 10 and a nonvolatile memory 11 for storing, in the input-enable state, a setting-data signal input from the input and output terminal 4. An operation state of a functional circuit 6 is set in accordance with the setting data written in the volatile memory 10 or the nonvolatile memory 11.
    • 提供能够改变包装密封后的特性的电子电路装置,并且在特征设定期间实现杂项任务的减少。 电子电路装置包括:突发检测电路7,用于从输入和输出端子4检测具有大于或等于规定时间的长度的规定的写入激活脉冲串; 当检测到写入激活脉冲串时,将串行接口8置于能够输入设定数据的输入使能状态的信号图案检测电路9; 以及易失性存储器10和非易失性存储器11,用于在输入使能状态下存储从输入和输出端子4输入的设定数据信号。功能电路6的操作状态根据设定数据 写入易失性存储器10或非易失性存储器11中。
    • 5. 发明授权
    • CMIS semiconductor nonvolatile storage circuit
    • CMIS半导体非易失性存储电路
    • US07151706B2
    • 2006-12-19
    • US11153113
    • 2005-06-15
    • Kazuyuki Nakamura
    • Kazuyuki Nakamura
    • G11C8/00
    • G11C14/00G11C16/0466
    • A nonvolatile semiconductor memory circuit includes a selection line, a first bit line, a second bit line, a first MIS transistor having a first gate coupled to the selection line, a first drain coupled to the first bit line via a first node, and a first source coupled to a predetermined potential, a second MIS transistor having a second gate coupled to the selection line, a second drain coupled to the second bit line via a second node, and a second source coupled to the predetermined potential, and a latch circuit coupled to the first node and the second node to store data responsive to a signal difference between the first node and the second node, wherein the selection line is operative to supply a write potential that creates a lingering change in a threshold voltage of one of the first MIS transistor and the second MIS transistor.
    • 非易失性半导体存储器电路包括选择线,第一位线,第二位线,具有耦合到选择线的第一栅极的第一MIS晶体管,经由第一节点耦合到第一位线的第一漏极,以及 耦合到预定电位的第一源极,具有耦合到选择线的第二栅极的第二MIS晶体管,经由第二节点耦合到第二位线的第二漏极和耦合到预定电位的第二源极,以及锁存电路 耦合到所述第一节点和所述第二节点以响应于所述第一节点和所述第二节点之间的信号差存储数据,其中所述选择线可操作以提供写入电位,所述写入电位在所述第一节点和所述第二节点之一的阈值电压中产生延迟变化 第一MIS晶体管和第二MIS晶体管。
    • 8. 发明授权
    • Bi-directional interface circuit of reduced signal alteration
    • 减少信号变化的双向接口电路
    • US5917364A
    • 1999-06-29
    • US997664
    • 1997-12-23
    • Kazuyuki Nakamura
    • Kazuyuki Nakamura
    • H04L25/49H03K19/00H03K19/003H03K19/0175
    • H03K19/0008H03K19/00346
    • To provide a bi-directional interface circuit which can reduce the simultaneous switching noise and the power consumption even at transitions of the signal direction, a bi-directional interface circuit of the invention comprises: an encoder (10) for generating an output bit sequence in synchronous with a clock cycle of the bus lines, said output bit sequence being obtained by coding an original signal and a redundant bit so that signal alteration rate of the output bit sequence to a preceding bit sequence thereof is less than a half; a decoder (20) for decoding the input bit sequence into an original bit sequence; and bypass lines (3) for bypassing the input bit sequence to the encoder for enabling the encoder to refer to the input bit sequence as the preceding bit sequence when the LSI chip begins to transfer the original signal. By providing a first encoder for generating an intermediate bit sequence having less than half logic `1` bits, and a second encoder for switching bit logic when corresponding bit of the intermediate bit sequence is logic `1`, the signal delay of the bypassed input bit sequence can be reduced and I/O clock frequency is not restricted.
    • 为了提供双向接口电路,即使在信号方向的转变时也能够降低同时的开关噪声和功耗,本发明的双向接口电路包括:编码器(10),用于产生输出位序列 与总线的时钟周期同步,所述输出比特序列是通过对原始信号和冗余比特进行编码而获得的,使得输出比特序列的信号改变率与其前一比特序列小于一半; 解码器(20),用于将输入比特序列解码为原始比特序列; 以及用于将输入比特序列旁路到编码器的旁路线路(3),以便当LSI芯片开始传送原始信号时,使编码器能够将输入比特序列参考为前一比特序列。 通过提供用于产生具有小于一半逻辑'1'比特的中间比特序列的第一编码器和用于在中间比特序列的对应比特为逻辑'1'时切换比特逻辑的第二编码器,旁路输入的信号延迟 可以减少位序列,并且I / O时钟频率不受限制。