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1. 发明授权

US11641184B2 Film bulk acoustic resonator 有权
公开(公告)号：US11641184B2
公开(公告)日：2023-05-02
申请号：US17016887
申请日：2020-09-10
申请人： Ningbo Semiconductor International Corporation
发明人： Xiaochuan Wang
IPC分类号： H03H9/17 , H03H3/02 , H03H9/02 , H01L41/277 , H03H9/05
摘要： Film bulk acoustic resonator (FBAR) is provided. An exemplary FBAR includes a substrate; a first insulating material layer on the substrate, the first insulating material layer containing a first cavity; a second insulating material layer on the first insulating material layer, the second insulating material layer containing a second cavity and a third cavity spaced apart from the second cavity, the second cavity and the third cavity both in communication with the first cavity; a resonator sheet covering the second cavity and partially extending over the second insulating material layer; a third insulating material layer over the second insulating material layer and the resonator sheet, the third insulating material layer containing a fourth cavity, the fourth cavity in communication with the third cavity, and the fourth cavity partially overlapping the second cavity; and a capping layer on the third insulating material layer.

2. 发明授权

US11575358B2 Thin-film bulk acoustic resonator and semiconductor apparatus comprising the same 有权
公开(公告)号：US11575358B2
公开(公告)日：2023-02-07
申请号：US15931994
申请日：2020-05-14
申请人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION , NINGBO SEMICONDUCTOR INTERNATIONAL CORPORATION
发明人： Herb He Huang , Clifford Ian Drowley , Jiguang Zhu , Haiting Li
IPC分类号： H03H3/02 , H03H9/10 , H03H9/17 , H03H9/56 , H01L27/20
摘要： A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing method are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and second cavities and continuously separates these two cavities. The plan views of the first and the second cavities have an overlapped region, which is a polygon that does not have any parallel sides. The piezoelectric film of this inventive concept is a continuous film without any through-hole in it, therefore it can offer improved acoustic resonance performance.

3. 发明申请

US20220106186A1 MEMS PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREFOR 有权
公开(公告)号：US20220106186A1
公开(公告)日：2022-04-07
申请号：US17418992
申请日：2019-11-05
申请人： NINGBO SEMICONDUCTOR INTERNATIONAL CORPORATION (SHANGHAI BRANCH)
发明人： Xiaoshan QIN
IPC分类号： B81B7/00 , B81C3/00
摘要： A micro-electro-mechanical system (MEMS) package structure and a method of fabricating the MEMS package structure. The MEMS package structure includes MEMS dies (200) and a device wafer (100), wherein the device wafer (100) is provided with a control unit and an interconnection structure (300); a first bonding face (100a) of the device wafer (100) is provided with first contact pads (410) and an input and output connection member (420); the MEMS dies (200) are arranged side by side on the first bonding face (100a) by a bonding layer (500); the MEMS die (200) has a micro-cavity (210) and a second contact pad (220); the micro-cavity (210) of the MEMS die (200) has a through hole (210a) in communication with the outside; the first contact pad (410) is electrically connected to the corresponding second contact pad (220); and the bonding layer (500) has an opening (510) exposing the input and output connection member (420). According to the MEMS package structure, the size of the package structure can be reduced with respect to an existing integration method; and various MEMS dies can be integrated on the same device wafer, and thus, a function integration capability of the package structure can also be improved.

4. 发明授权

US11296141B2 Image capturing assembly and packaging method thereof, lens module, and electronic device 有权
公开(公告)号：US11296141B2
公开(公告)日：2022-04-05
申请号：US16236840
申请日：2018-12-31
申请人： Ningbo Semiconductor International Corporation
发明人： Da Chen , Mengbin Liu
IPC分类号： H01L27/146 , H01L23/00 , H01L31/18
摘要： The present disclosure provides an image capturing assembly and its packaging method, a lens module and an electronic device. The packaging method includes: providing a photosensitive chip; mounting an optical filter on the photosensitive chip; providing a carrier substrate and temporarily bonding the photosensitive chip and functional components on the carrier substrate; and forming an encapsulation layer on the carrier substrate and at least between the photosensitive chip and the functional components.

5. 发明申请

US20220070338A1 IMAGING MODULE 有权
公开(公告)号：US20220070338A1
公开(公告)日：2022-03-03
申请号：US17415022
申请日：2020-07-01
申请人： Ningbo Semiconductor International Corporation
发明人： Luo GUI
IPC分类号： H04N5/225 , G03B5/02
摘要： An imaging module, including a moved element; a limiting groove, arranged on a surface of the moved element; a piezoelectric element, including a movable end and a fixed end, wherein the movable end is provided with a rotating shaft, the rotating shaft is arranged in the limiting groove, the limiting groove provides a mobile space for the rotating shaft, and the movable end drives the moved element; an elastic limiting piece, one end of which is connected to the movable end of the piezoelectric element and the other end is located in the limiting groove or connected to a portion opposite to an end face of the movable end; a supporting block, configured to support and fix the piezoelectric element; and an external signal connection end, electrically connected to an electrode in the piezoelectric element.

6. 发明申请

US20220069008A1 INTEGRATING STRUCTURE FOR CRYSTAL RESONATOR AND CONTROL CIRCUIT, AND INTEGRATING METHOD THEREFOR 有权
公开(公告)号：US20220069008A1
公开(公告)日：2022-03-03
申请号：US17419579
申请日：2019-11-05
申请人： NINGBO SEMICONDUCTOR INTERNATIONAL CORPORATION (SHANGHAI BRANCH)
发明人： Xiaoshan QIN
IPC分类号： H01L27/20 , H03H3/02 , H03H9/10 , H03H9/19
摘要： A structure and method for integrating a crystal resonator with a control circuit are disclosed. The crystal resonator is integrated with both the control circuit (110) and a semiconductor die (900) on a single device wafer (100) through forming a piezoelectric vibrator (500) on, and bonding the semiconductor die (900) to, a back side of the device wafer (100). This allows an increased degree of integration of the crystal resonator and on-chip modulation of its parameters. Compared with traditional crystal resonators, the disclosed crystal resonator is more compact in size and hence less power-consuming.

7. 发明申请

US20220063988A1 MEMS PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREFOR 有权
公开(公告)号：US20220063988A1
公开(公告)日：2022-03-03
申请号：US17419199
申请日：2019-11-05
申请人： NINGBO SEMICONDUCTOR INTERNATIONAL CORPORATION (SHANGHAI BRANCH)
发明人： Xiaoshan QIN
IPC分类号： B81B7/00 , B81C1/00
摘要： A micro-electro-mechanical system (MEMS) package structure and a method of fabricating the MEMS package structure. The MEMS package structure includes a MEMS die (210,220) and a device wafer (100). A control unit and an interconnection structure (300) are formed in the device wafer (100), and a first contact pad (410) is formed on a first surface (100a) of the device wafer. The MEMS die (210,220) includes a micro-cavity (221), a second contact pad (201) configured to be coupled to an external electrical signal, and a bonding surface (200a,220a). The micro-cavity (221) of the MEMS die (210,220) is provided with a through hole (221a) in communication with the exterior of the die. The MEMS die (210,220) is bonded to the first surface (100a) by a bonding layer (500), in which an opening (510) is formed. The first contact pad (410) is electrically connected to the second contact pad (201), and a rewiring layer (700) is arranged on a second surface (100b) opposing the first surface (100a). The MEMS package structure allows electrical interconnection between the MEMS die and the device wafer with a reduced package size, compared to those produced by existing integration techniques. In addition, a plurality of MEMS dies of the same or different structures and functions are allowed to be integrated on the same device wafer.

8. 发明授权

US11171166B2 Camera assembly and packaging method thereof, lens module, electronic device 有权
公开(公告)号：US11171166B2
公开(公告)日：2021-11-09
申请号：US16234904
申请日：2018-12-28
申请人： Ningbo Semiconductor International Corporation
发明人： Da Chen , Mengbin Liu
IPC分类号： H01L27/146 , H01L31/18 , H01L23/00 , H01L21/48 , H01L21/56 , H01L23/31 , H01L23/538 , H04N5/225 , G03B17/12
摘要： The present disclosure provides a camera assembly and a packaging method thereof, a lens module, and an electronic device. The packaging method of the camera assembly includes: providing a carrier substrate and forming a redistribution layer (RDL) structure on the carrier substrate; providing functional components having solder pads; forming a photosensitive unit, including a photosensitive chip and an optical filter mounted on the photosensitive chip, that the photosensitive chip has solder pads facing the optical filter; temporarily bonding the optical filter of the photosensitive unit with the carrier substrate, and placing the functional components on the RDL structure, that each of the solder pads of the photosensitive chip and the solder pads of the functional components faces the RDL structure and electrically connects with the RDL structure; forming an encapsulation layer covering the carrier substrate, that the encapsulation layer is coplanar with a highest top of the photosensitive chip and the functional components; and removing the carrier substrate.

9. 发明申请

US20210280527A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20210280527A1
公开(公告)日：2021-09-09
申请号：US17330767
申请日：2021-05-26
申请人： Ningbo Semiconductor International Corporation
发明人： Mengbin LIU
IPC分类号： H01L23/544 , B81C99/00 , H01L21/78 , H01L21/67
摘要： A semiconductor device is provided. The semiconductor device includes: a plurality of alignment dies, each including a diced first base substrate and at least one alignment mark on the diced first base substrate; a second base substrate; and a bonding film on the second base substrate. An alignment die of the plurality of alignment dies are attached on the bonding film on an alignment region of the second base substrate for aligning the second base substrate.

10. 发明申请

US20210184643A1 FILM BULK ACOUSTIC RESONATOR AND FABRICATION METHOD THEREOF 有权
公开(公告)号：US20210184643A1
公开(公告)日：2021-06-17
申请号：US17249391
申请日：2021-03-01
申请人： Ningbo Semiconductor International Corporation
发明人： Guohuang YANG
IPC分类号： H03H3/02 , H03H9/05 , H03H9/17
摘要： The present disclosure provides a film bulk acoustic resonator and its fabrication method. The fabrication method includes providing a first substrate, and sequentially forming a first electrode layer, a piezoelectric material layer, and a second electrode layer, on the first substrate; forming a support layer on the second electrode layer and forming a cavity with a top opening in the support layer, where the cavity passes through the support layer; providing a second substrate and bonding the second substrate with the support layer; removing the first substrate; and patterning the first electrode layer, the piezoelectric material layer, and the second electrode layer to form a first electrode, a piezoelectric layer, and a second electrode.

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