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    • 5. 发明授权
    • Stacked structure for memory chips
    • 内存芯片的堆叠结构
    • US06472736B1
    • 2002-10-29
    • US10097822
    • 2002-03-13
    • Nai Hua YehChen Pin Peng
    • Nai Hua YehChen Pin Peng
    • H01L2302
    • H01L25/0657H01L23/3128H01L23/5385H01L24/48H01L2224/05599H01L2224/06136H01L2224/32145H01L2224/32225H01L2224/45099H01L2224/48091H01L2224/48227H01L2224/4824H01L2224/73215H01L2224/73265H01L2224/85399H01L2225/0651H01L2225/06527H01L2225/06572H01L2225/06586H01L2924/00014H01L2924/15311H01L2924/181H01L2924/19107H01L2924/00H01L2924/00012H01L2224/45015H01L2924/207
    • A stacked structure for memory chips includes a substrate, a lower memory chip, an upper memory chip, and an insulation medium. The substrate has an upper surface, a lower surface and a slot penetrating through the substrate from the upper surface to the lower surface. The lower memory chip has a central portion formed with a plurality of bonding pads. The lower memory chip is arranged on the upper surface of the substrate. The plurality of bonding pads is exposed via the slot of the substrate, and the bonding pads are electrically connected to the lower surface of the substrate via a plurality of wires. The upper memory chip has a central portion formed with a plurality of bonding pads. The upper memory chip is arranged on the lower memory chip in a back-to-back manner with respect to the lower memory chip so that the plurality of bonding pads of the upper memory chip faces upwards. The insulation medium has a central portion formed with a slot. The plurality of bonding pads of the upper memory chip is exposed via the slot of the insulation medium. The insulation medium is formed with a plurality of traces electrically connecting to the bonding pads of the upper memory chip and the upper surface of the substrate via a plurality of wires. Accordingly, the length and radian of each wire can be reduced so that a better signal transmission effect and a smaller package volume can be obtained.
    • 用于存储芯片的叠层结构包括基板,下存储芯片,上存储芯片和绝缘介质。 基板具有从上表面到下表面穿过基板的上表面,下表面和狭槽。 下部存储器芯片具有形成有多个接合焊盘的中心部分。 下部存储器芯片布置在基板的上表面上。 多个接合焊盘经由衬底的槽暴露,并且焊盘通过多根电线电连接到衬底的下表面。 上存储芯片具有形成有多个接合焊盘的中心部分。 上部存储器芯片相对于下部存储器芯片以背靠背的方式布置在下部存储器芯片上,使得上部存储器芯片的多个焊盘面朝上。 绝缘介质具有形成有槽的中心部分。 上存储芯片的多个接合焊盘通过绝缘介质的槽露出。 绝缘介质形成有多条迹线,其经由多根电线电连接到上存储芯片的接合焊盘和衬底的上表面。 因此,可以减少每条线的长度和弧度,从而可以获得更好的信号传输效果和更小的封装体积。