专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5208124A Method of making a mask for proximity effect correction in projection lithography 失效
标题翻译：在投影光刻中制作接近效应校正的掩模的方法
公开(公告)号：US5208124A
公开(公告)日：1993-05-04
申请号：US671567
申请日：1991-03-19
申请人： Frederik Sporon-Fiedler , Nader Shamma , Edward Lin
发明人： Frederik Sporon-Fiedler , Nader Shamma , Edward Lin
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027
CPC分类号： G03F7/70441 , G03F1/36
摘要： Reticle data used to form a reticle pattern is modified to substantially compensate for proximity effects resulting from the diffraction of light by opaque portions of the reticle pattern.The reticle pattern is thus modified so that the exposed pattern on the wafer results in a desired pattern, wherein isolated features and features in a dense pattern of features formed on the wafer will be identical and have predictable characteristics.
摘要翻译：用于形成掩模版图案的掩模版数据被修改以基本上补偿由掩模版图案的不透明部分衍射的光所产生的邻近效应。因此修改掩模版图案，使得晶片上的曝光图案产生期望的图案，其中形成在晶片上的特征的致密图案中的隔离特征和特征将是相同的并且具有可预测的特性。

2. 发明申请

US20050057754A1 Measurement of thin film properties using plasmons 审中-公开
标题翻译：使用等离子体激元测量薄膜性能
公开(公告)号：US20050057754A1
公开(公告)日：2005-03-17
申请号：US10888555
申请日：2004-07-08
申请人： David Smith , Behzad Imani , Nader Shamma , Patrick Maxton , Mark Brongersma
发明人： David Smith , Behzad Imani , Nader Shamma , Patrick Maxton , Mark Brongersma
IPC分类号： G01N21/47 , G01N21/55 , G01N21/63 , G01N21/84
CPC分类号： G01N21/4788 , G01N21/553 , G01N21/636 , G01N21/8422
摘要： Properties of thin electrically conductive films are measured using plasmons. The plasmons are excited in the film using a suitable pump beam of electromagnetic radiation. A probe beam of electromagnetic radiation is directed onto the excited film and is diffracted thereby and the diffracted beam is detected. The detected signal indicates film properties such as thickness and surface roughness.
摘要翻译：使用等离子体激元测量薄导电膜的性质。使用合适的电磁辐射束激发等离子体激元在膜中。电磁辐射的探测光束被引导到激发的膜上并被衍射，并且检测衍射光束。检测到的信号表示薄膜性质如厚度和表面粗糙度。

3. 发明授权

US5331370A Method and apparatus for determining a feature-forming variant of a lithographic system 失效
标题翻译：用于确定光刻系统的特征形成变型的方法和装置
公开(公告)号：US5331370A
公开(公告)日：1994-07-19
申请号：US56099
申请日：1993-05-03
申请人： S. Jeffrey Rosner , Nader Shamma , Frederik Sporon-Fiedler
发明人： S. Jeffrey Rosner , Nader Shamma , Frederik Sporon-Fiedler
IPC分类号： G02B27/46 , G03F7/20 , G03F7/207 , H01L21/027 , G03B27/42
CPC分类号： G03F7/70558 , G03F7/70625 , G03F7/70641
摘要： A method of determining a feature-forming variant, such as focus or exposure, for a lithographic system or the like includes Fourier processing that extracts a figure of merit. In a preferred embodiment, the lithographic system fabricates a series of formations of a single pattern. An optical image of each exposure is formed. A Fourier power spectrum is determined for each optical image. An angular power function is extracted from each power spectrum by quantifying optical power along lines originating at various angles from an origin of the power spectrum. With regard to axes of maximum power, the distribution of on-axes and off-axes power is quantified for each angular power function. An optimum for the lithographic system is determined based upon the data extracted from the angular power functions. Preferably, the extraction of an angular power function from the associated Fourier power spectrum is an averaging of the optical power along selected portions of the lines originating from the origin, thereby improving the signal-to-noise ratio.
摘要翻译：确定用于光刻系统等的特征形成变型（例如焦点或曝光）的方法包括提取品质因数的傅里叶处理。在优选实施例中，光刻系统制造单一图案的一系列结构。形成每次曝光的光学图像。为每个光学图像确定傅立叶功率谱。通过沿着源自功率谱的原点的各种角度的线进行量化光功率，从每个功率谱提取角功率函数。关于最大功率的轴，对于每个角功率函数量化轴上和离轴功率的分布。基于从角功率函数提取的数据来确定光刻系统的最佳值。优选地，从相关联的傅里叶功率谱中提取角功率函数是沿着源自原点的线的选定部分的光功率的平均，从而提高信噪比。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式