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1. 发明授权

US10435588B2 Polishing composition 有权
公开(公告)号：US10435588B2
公开(公告)日：2019-10-08
申请号：US15769889
申请日：2016-10-20
申请人： NITTA HAAS INCORPORATED
发明人： Noriaki Sugita , Mika Tazuru , Takayuki Matsushita , Shuhei Matsuda
IPC分类号： C09G1/02 , C09G1/16 , B24B37/00 , C08F216/06 , H01L21/02 , C09K3/14 , H01L21/321
摘要： A polishing composition that can suppress surface defects and reduce haze is provided. A polishing composition includes: abrasives; at least one water-soluble polymer selected from vinyl alcohol-based resins having a 1,2-diol structural unit; and an alkali compound, where an average particle size of particles in the polishing composition measured by dynamic light scattering is not more than 55 nm. Preferably, the polishing composition further includes a non-ionic surfactant. Preferably, the polishing composition further includes a polyalcohol.

2. 发明授权

US10344187B2 Polishing composition and polishing method using the same 有权
公开(公告)号：US10344187B2
公开(公告)日：2019-07-09
申请号：US14561188
申请日：2014-12-04
申请人： NITTA HAAS INCORPORATED , SUMCO CORPORATION
发明人： Masashi Teramoto , Shinichi Ogata , Ryuichi Tanimoto
IPC分类号： C09G1/04 , H01L21/02 , C09G1/02 , H01L21/306
摘要： Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 μm/min can be achieved.

3. 发明授权

US10344184B2 Polishing composition 有权
公开(公告)号：US10344184B2
公开(公告)日：2019-07-09
申请号：US15129835
申请日：2015-03-30
申请人： NITTA HAAS INCORPORATED
发明人： Masashi Teramoto , Tatsuya Nakauchi , Noriaki Sugita , Shinichi Haba , Akiko Miyamoto
IPC分类号： C09G1/02 , H01L21/02 , C09K3/14
摘要： Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the proportion of the hydroxyethyl cellulose adsorbed to the abrasive grains is 30% or more and 90% or less.

4. 发明申请

US20180312725A1 POLISHING COMPOSITION 审中-公开
公开(公告)号：US20180312725A1
公开(公告)日：2018-11-01
申请号：US15769934
申请日：2016-10-21
申请人： NITTA HAAS INCORPORATED
发明人： Noriaki SUGITA , Shuhei MATSUDA , Takayuki MATSUSHITA , Mika TAZURU
IPC分类号： C09G1/02 , H01L21/306
CPC分类号： C09G1/02 , B24B37/00 , B24B37/044 , H01L21/02024 , H01L21/304 , H01L21/30625
摘要： A polishing composition capable of suppressing surface defects and reducing haze is provided. The polishing composition includes: abrasives; at least one water-soluble polymer selected from vinyl alcohol-based resins having a 1,2-diol structural unit; a polyalcohol; and an alkali compound. Preferably, the polishing composition further includes a non-ionic surfactant.

5. 发明申请

US20180305580A1 POLISHING COMPOSITION 审中-公开
公开(公告)号：US20180305580A1
公开(公告)日：2018-10-25
申请号：US15769889
申请日：2016-10-20
申请人： NITTA HAAS INCORPORATED
发明人： Noriaki SUGITA , Mika TAZURU , Takayuki MATSUSHITA , Shuhei MATSUDA
IPC分类号： C09G1/02 , C09G1/16
摘要： A polishing composition that can suppress surface defects and reduce haze is provided. A polishing composition includes: abrasives; at least one water-soluble polymer selected from vinyl alcohol-based resins having a 1,2-diol structural unit; and an alkali compound, where an average particle size of particles in the polishing composition measured by dynamic light scattering is not more than 55 nm. Preferably, the polishing composition further includes a non-ionic surfactant. Preferably, the polishing composition further includes a polyalcohol.

6. 发明授权

US09633831B2 Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same 有权
公开(公告)号：US09633831B2
公开(公告)日：2017-04-25
申请号：US13975890
申请日：2013-08-26
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc. , Nitta Haas Incorporated
发明人： Allen S. Bulick , Hideaki Nishizawa , Kazuki Moriyama , Koichi Yoshida , Shunji Ezawa , Selvanathan Arumugam
IPC分类号： C09G1/02 , H01L21/02 , C09K3/14
CPC分类号： H01L21/02019 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/02013 , H01L21/02035 , H01L21/0242
摘要： A method of polishing a sapphire substrate is provided, comprising: providing a substrate having an exposed sapphire surface; providing a chemical mechanical polishing slurry, wherein the chemical mechanical polishing slurry comprises, as initial components: colloidal silica abrasive, wherein the colloidal silica abrasive has a negative surface charge; and, wherein the colloidal silica abrasive exhibits a multimodal particle size distribution with a first particle size maximum between 2 and 25 nm; and, a second particle size maximum between 75 and 200 nm; optionally, a biocide; optionally, a nonionic defoaming agent; and, optionally, a pH adjuster. A chemical mechanical polishing composition for polishing an exposed sapphire surface is also provided.

7. 发明申请

US20150299517A1 POLISHING COMPOSITION 有权
标题翻译：抛光组合物
公开(公告)号：US20150299517A1
公开(公告)日：2015-10-22
申请号：US14440688
申请日：2013-11-19
申请人： NITTA HAAS INCORPORATED
发明人： Takayuki MATSUSHITA
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , C09K3/1409 , C23F1/30 , H01L21/02024
摘要： A polishing composition of the present invention contains: a polyvinyl alcohol resin having a 1,2-diol structure in its side chain, the polyvinyl alcohol resin being a copolymer of a monomer represented by Formula (1) below and a vinyl ester monomer; an organic acid; and abrasive grains whose surfaces are chemically modified so as to have a minus zeta potential on the surfaces in a solution with a pH of 2.0 or more and to have no isoelectric point: (where R1 to R6 each independently denote a hydrogen atom or an organic group, X denotes a single bond or a linking group, and R7 and R8 each independently denote a hydrogen atom or R9—CO— (where R9 denotes an alkyl group)).
摘要翻译：本发明的研磨用组合物含有：侧链具有1,2-二醇结构的聚乙烯醇树脂，聚乙烯醇树脂为下述式（1）表示的单体与乙烯基酯单体的共聚物，有机酸; 表面被化学改性以在pH为2.0以上的溶液中的表面具有负ζ电位且不具有等电点的磨粒：（其中R 1至R 6各自独立地表示氢原子或有机物基团，X表示单键或连接基团，并且R 7和R 8各自独立地表示氢原子或R 9 -CO-（其中R 9表示烷基））。

8. 发明申请

US20150083962A1 POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME 审中-公开
标题翻译：抛光组合物和使用该抛光组合物的抛光方法
公开(公告)号：US20150083962A1
公开(公告)日：2015-03-26
申请号：US14561188
申请日：2014-12-04
申请人： NITTA HAAS INCORPORATED , SUMCO CORPORATION
发明人： Masashi TERAMOTO , Shinichi OGATA , Ryuichi TANIMOTO
IPC分类号： C09G1/04
CPC分类号： C09G1/04 , C09G1/02 , H01L21/02024 , H01L21/30604
摘要： Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 μm/min can be achieved.
摘要翻译：本发明提供一种抛光组合物，其不包含研磨剂，并且用于研磨硅晶片，所述抛光组合物包括pH缓冲剂，抛光促进剂，水溶性聚合物和嵌段型化合物。通过使用研磨用组合物研磨硅晶片，可以得到大于0.1μm/分钟的研磨速度。

9. 发明授权

US11791164B2 Polishing composition and polishing method 有权
公开(公告)号：US11791164B2
公开(公告)日：2023-10-17
申请号：US15129838
申请日：2015-03-30
申请人： NITTA HAAS INCORPORATED
发明人： Takayuki Matsushita , Tomoki Yamasaki
IPC分类号： H01L21/321 , C09G1/02 , H01L21/02 , H01L21/3105
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/02024 , H01L21/31053
摘要： The present invention relates to a polishing composition including water and silica, wherein the silica has a BET specific surface area of 30 m2/g or more and an NMR specific surface area of 10 m2/g or more, and a polishing method using the polishing composition. The polishing composition of the present invention adopts silica having the BET specific surface area falling within the above-described range, and additionally having the NMR specific surface area falling within a specific range, and consequently attains a high polishing rate, and can maintain the polishing rate even when used for a long time.

10. 发明授权

US10249486B2 Method for polishing semiconductor substrate 有权
公开(公告)号：US10249486B2
公开(公告)日：2019-04-02
申请号：US15129842
申请日：2015-03-30
申请人： NITTA HAAS INCORPORATED
发明人： Masashi Teramoto , Tatsuya Nakauchi , Noriaki Sugita , Shinichi Haba , Akiko Miyamoto
IPC分类号： H01L21/02
摘要： Proposed is a method for polishing a semiconductor substrate including an intermediate polishing step of polishing in such a way that the number of surface defects having heights of less than 3 nm is 45% or more of the total number of the surface defects on the surface of a semiconductor substrate, and a final polishing step of finish-polishing the semiconductor substrate after the intermediate polishing step.

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