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1. 发明申请

US20140166205A1 PROCESS MONITORING DEVICE FOR USE IN SUBSTRATE PROCESS APPARATUS, PROCESS MONITORING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：用于基板工艺装置的工艺监测装置，工艺监测方法和基板处理装置
公开(公告)号：US20140166205A1
公开(公告)日：2014-06-19
申请号：US14111030
申请日：2012-04-06
申请人： Caizhong Tian , Toshihisa Nozawa , Kazuki Moyama , Takahiro Senda , Kazuyuki Kato , Munetaka Yamagami
发明人： Caizhong Tian , Toshihisa Nozawa , Kazuki Moyama , Takahiro Senda , Kazuyuki Kato , Munetaka Yamagami
IPC分类号： G01B11/24 , H01J37/32
CPC分类号： G01B11/24 , G01B11/02 , G01B11/06 , G01N21/9501 , H01J37/32009 , H01L21/67253 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A process monitoring device 11 includes a light source unit that outputs light; a light detection unit that detects an intensity of light; a first optical path 21 that guides the light outputted from the light source unit to a wafer W and guides reflection light from the wafer W to the light detection unit; a second optical path that has a light propagation characteristic equivalent to that of the first optical path 21 and guides the light outputted from the light source unit to the light detection unit without allowing the light to pass the wafer W; and a controller 17 that corrects intensity information of the light detected by the light detection unit via the first optical path 21 based on intensity information of the light detected by the light detection unit via the second optical path, and analyzes a structure of the wafer W.
摘要翻译：处理监视装置11包括输出光的光源单元; 光检测单元，其检测光的强度; 第一光路21，其将从光源单元输出的光引导到晶片W，并将来自晶片W的反射光引导到光检测单元; 具有与第一光路21的光传播特性相当的光传播特性的第二光路，并将从光源单元输出的光引导到光检测单元，而不允许光通过晶片W; 以及控制器17，其通过第一光路21基于由光检测单元检测出的光的强度信息经由第二光路校正由光检测单元检测到的光的强度信息，并分析晶片W的结构。

2. 发明申请

US20130180660A1 PLASMA TREATMENT DEVICE AND OPTICAL MONITOR DEVICE 有权
标题翻译：等离子体处理装置和光学监测装置
公开(公告)号：US20130180660A1
公开(公告)日：2013-07-18
申请号：US13818720
申请日：2011-08-24
申请人： Toshihisa Nozawa , Takahiro Senda , Shinya Nishimoto , Munetaka Yamagami , Kazuki Moyama
发明人： Toshihisa Nozawa , Takahiro Senda , Shinya Nishimoto , Munetaka Yamagami , Kazuki Moyama
IPC分类号： G01N21/55
CPC分类号： G01N21/55 , H01J37/32192 , H01J37/32972 , H01L21/31116 , H01L22/12 , H01L22/26 , H01L29/6659 , H01L2924/0002 , H01L2924/00
摘要： [Problem] To carry out high accuracy optical monitoring of the surface of a substrate to be treated inside a treatment vessel using non-coherent monitor light having a wide wavelength range, without affecting the uniformity of the electromagnetic radiation from a planar slot antenna.[Solution] The optical monitor device 100 of the present microwave plasma etching device has: a monitor head 102 located in a position more radially inward than the edge of a semiconductor wafer W mounted on a susceptor 12, more radially outward than a coaxial pipe 66, and above a cover plate 72; an optical waveguide 104 for monitoring provided vertically below the monitor head 102, and longitudinally traversing the cooling plate 72, a dielectric plate 54, and a dielectric window 52; and a monitor main body optically connected to the monitor head 102 via an optical fiber 106.
摘要翻译： [问题]使用具有宽波长范围的非相干监视光，在处理容器内进行待处理基板的表面的高精度光学监视，而不影响来自平面缝隙天线的电磁辐射的均匀性。本解决方案本微波等离子体蚀刻装置的光学监测装置100具有：监视器头102，其位于比安装在基座12上的半导体晶片W的边缘更径向向内的位置，比同轴管66更径向向外和盖板72上方; 用于监控的光波导104，其垂直地设置在监视器头102的下方，并纵向穿过冷却板72，电介质板54和电介质窗口52; 以及经由光纤106与监视器头102光学连接的监视器主体。

3. 发明授权

US08974628B2 Plasma treatment device and optical monitor device 有权
标题翻译：等离子体处理装置和光学监测装置
公开(公告)号：US08974628B2
公开(公告)日：2015-03-10
申请号：US13818720
申请日：2011-08-24
申请人： Toshihisa Nozawa , Takahiro Senda , Shinya Nishimoto , Munetaka Yamagami , Kazuki Moyama
发明人： Toshihisa Nozawa , Takahiro Senda , Shinya Nishimoto , Munetaka Yamagami , Kazuki Moyama
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , G01N21/55 , H01J37/32 , H01L21/311 , H01L21/66 , H01L29/66
CPC分类号： G01N21/55 , H01J37/32192 , H01J37/32972 , H01L21/31116 , H01L22/12 , H01L22/26 , H01L29/6659 , H01L2924/0002 , H01L2924/00
摘要： An optical monitor device of the present microwave plasma etching device has: a monitor head located in a position more radially inward than the edge of a semiconductor wafer W mounted on a susceptor, more radially outward than a coaxial pipe, and above a cover plate; an optical waveguide for monitoring provided vertically below the monitor head, and longitudinally traversing the cooling plate, a dielectric plate, and a dielectric window; and a monitor main body optically connected to the monitor head via an optical fiber.
摘要翻译：本微波等离子体蚀刻装置的光学监视装置具有：位于比安装在基座上的半导体晶片W的边缘更径向向内的位置比同轴管更径向向外并位于盖板上方的监视器头; 用于监视的光波导，其垂直设置在监视器头下方，并纵向穿过冷却板，电介质板和电介质窗; 以及经由光纤与监视器头光学连接的监视器主体。

4. 发明申请

US20110046765A1 INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM 审中-公开
标题翻译：信息处理设备，信息处理方法和程序
公开(公告)号：US20110046765A1
公开(公告)日：2011-02-24
申请号：US12809749
申请日：2008-12-17
申请人： Munetaka Yamagami
发明人： Munetaka Yamagami
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , G05B2219/31477 , G05B2219/32187 , G05B2219/45031 , H01L21/67109 , H01L22/20 , H01L2924/0002 , Y02P90/12 , Y02P90/22 , H01L2924/00
摘要： An information processing device includes a target value receiving unit receiving one or more types of target values in a predetermined semiconductor manufacturing process; a parameter acquiring unit acquiring values of parameters during the semiconductor manufacturing process; an execution result acquiring unit acquiring one or more types of execution results indicating results of the semiconductor manufacturing process; an accumulation unit associating the execution results, the target values, and the values of parameters with one another and accumulating the same; a correlation acquiring unit acquiring correlation information indicating correlations among the execution results, the target values, and the values of parameters; an assist information acquiring unit acquiring assist information related to parameters with high correlation with respect to the target values received by the target value receiving unit by using the correlation information; and an output unit outputting the assist information acquired by the assist information acquiring unit.
摘要翻译：信息处理装置包括在预定的半导体制造过程中接收一种或多种类型的目标值的目标值接收单元; 参数获取单元，在半导体制造过程中获取参数值; 执行结果获取单元获取指示半导体制造过程的结果的一种或多种类型的执行结果; 累加单元，将执行结果，目标值和参数值相互关联并累加; 相关获取单元获取指示执行结果，目标值和参数值之间的相关性的相关信息; 辅助信息获取单元通过使用所述相关信息来获取与由所述目标值接收单元接收到的所述目标值具有高相关性的参数相关的辅助信息; 以及输出单元，输出由辅助信息获取单元获取的辅助信息。

5. 发明申请

US20100045684A1 HOST CONTROL DEVICE, SLAVE CONTROL DEVICE, SCREEN OPERATION RIGHT GIVING METHOD, AND STORAGE MEDIUM CONTAINING SCREEN OPERATION RIGHT GIVING PROGRAM 审中-公开
标题翻译：主机控制设备，从属控制设备，屏幕操作正确的方式以及包含屏幕操作的存储媒体正确的生成程序
公开(公告)号：US20100045684A1
公开(公告)日：2010-02-25
申请号：US12515204
申请日：2007-11-15
申请人： Munetaka Yamagami
发明人： Munetaka Yamagami
IPC分类号： G06F13/14
CPC分类号： G05B19/0421 , G05B2219/2231 , G06F3/1454 , G09G5/001 , H01L21/67155
摘要： A host personal computer (PC) 100 is connected to a plurality of slave PC 200 for controlling a plurality of process modules (PM) or a transfer module (TM). The host PC 100 judges whether or not an operation right is given to the slave PC 200 which has requested the operation right in accordance with the screen operation request from the slave PC 200.
摘要翻译：主机个人计算机（PC）100连接到多个从PC 200，用于控制多个处理模块（PM）或传送模块（TM）。主机100判断是否根据来自从PC200的屏幕操作请求请求了操作权的从PC 200给出操作权限。

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