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1. 发明申请

US20060019174A1 Photo mask and method of correcting the transmissivity of a photo mask 失效
公开(公告)号：US20060019174A1
公开(公告)日：2006-01-26
申请号：US11045045
申请日：2005-01-31
申请人： Won-suk Ahn , Moon-gyu Sung , Seong-woon Choi , Sung-yong Cho , Jeong-yun Lee
发明人： Won-suk Ahn , Moon-gyu Sung , Seong-woon Choi , Sung-yong Cho , Jeong-yun Lee
IPC分类号： C23C14/32 , G06K9/00 , C23C14/00 , G03F1/00
CPC分类号： G03F7/70433 , G03F1/60 , G03F1/72 , G03F7/70625
摘要： A photo mask for use in forming a pattern, such as a photoresist pattern, is corrected to compensate for discrepancies in the transmissivity of the photo mask which results in the pattern having a distribution of critical dimensions that is too great or which deviates too much from the target critical dimension of the pattern. The photo mask includes a transparent substrate, a light-shielding layer pattern defining transmission sites on the transparent substrate, and at least some of which sites have a relatively low transmissivity. The method of correcting the photo mask includes doping a front surface of the transparent substrate of the photo mask with ions. A predetermined number of the sites can be doped to narrow the distribution of the critical dimensions of the pattern formed using the photo mask, or all of the transmission sites of the photo mask can be doped to make the average of the critical dimensions of the pattern closer to the target critical dimension of the pattern.

2. 发明授权

US07521156B2 Photo mask and method of correcting the transmissivity of a photo mask 失效
标题翻译：照相掩模和校正透光率的方法
公开(公告)号：US07521156B2
公开(公告)日：2009-04-21
申请号：US11045045
申请日：2005-01-31
申请人： Won-suk Ahn , Moon-gyu Sung , Seong-woon Choi , Sung-yong Cho , Jeong-yun Lee
发明人： Won-suk Ahn , Moon-gyu Sung , Seong-woon Choi , Sung-yong Cho , Jeong-yun Lee
IPC分类号： G03F9/00 , G03F7/20
CPC分类号： G03F7/70433 , G03F1/60 , G03F1/72 , G03F7/70625
摘要： A photo mask for use in forming a pattern, such as a photoresist pattern, is corrected to compensate for discrepancies in the transmissivity of the photo mask which results in the pattern having a distribution of critical dimensions that is too great or which deviates too much from the target critical dimension of the pattern. The photo mask includes a transparent substrate, a light-shielding layer pattern defining transmission sites on the transparent substrate, and at least some of which sites have a relatively low transmissivity. The method of correcting the photo mask includes doping a front surface of the transparent substrate of the photo mask with ions. A predetermined number of the sites can be doped to narrow the distribution of the critical dimensions of the pattern formed using the photo mask, or all of the transmission sites of the photo mask can be doped to make the average of the critical dimensions of the pattern closer to the target critical dimension of the pattern.
摘要翻译：校正用于形成图案（例如光致抗蚀剂图案）的光掩模，以补偿光掩模的透射率的差异，这导致图案的临界尺寸分布太大或偏离太多模式的目标关键维度。光掩模包括透明基板，限定透明基板上的透射部位的遮光层图案，并且其中至少一些位置的透射率相对较低。修正光掩模的方法包括用离子掺杂光掩模的透明基片的前表面。可以掺杂预定数量的部位以缩小使用光掩模形成的图案的临界尺寸的分布，或者可以掺杂光掩模的所有透射部位以使得图案的临界尺寸的平均值更接近模式的目标关键维度。

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