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1. 发明申请

US20130279264A1 NONVOLATILE MEMORY DEVICE, SYSTEM AND PROGRAMMING METHOD WITH DYNAMIC VERIFICATION MODE SELECTION 有权
公开(公告)号：US20130279264A1
公开(公告)日：2013-10-24
申请号：US13919010
申请日：2013-06-17
申请人： Moo Sung KIM
发明人： Moo Sung KIM
IPC分类号： G11C16/10
CPC分类号： G11C16/10 , G11C16/0483 , G11C16/3454 , G11C16/3459
摘要： Nonvolatile memory devices, memory systems and related methods of operating nonvolatile memory devices are presented. During a programming operation, the nonvolatile memory device is capable of using bit line forcing, and is also capable of selecting a verification mode for use during a verification operation from a group of verification modes on the basis of an evaluated programming condition.

2. 发明授权

US08503231B2 Multi-level cell flash memory device and read method 有权
标题翻译：多级单元闪存设备和读取方式
公开(公告)号：US08503231B2
公开(公告)日：2013-08-06
申请号：US12623509
申请日：2009-11-23
申请人： Moo-sung Kim , Pan-suk Kwak
发明人： Moo-sung Kim , Pan-suk Kwak
IPC分类号： G11C11/34
CPC分类号： G11C16/0483 , G11C16/26
摘要： A method of reading data of a multi-level cell (MLC) flash memory device is disclosed. The method includes reading a least significant bit (LSB) and a most significant bit (MSB) of the data programmed to a plurality of memory cells. Reading each of the LSB and MSB includes; reading a MSB flag indicating whether or not the MSB for memory cells in a page of memory cells has been programmed, performing a first read with respect to a plurality of first bit lines, setting a target voltage in view of the read value of the MSB flag, applying the target voltage to a plurality of second bit lines, and performing a second read with respect to the plurality of second bit lines.
摘要翻译：公开了一种读取多级单元（MLC）闪速存储器件的数据的方法。该方法包括读取编程到多个存储器单元的数据的最低有效位（LSB）和最高有效位（MSB）。读取每个LSB和MSB包括; 读取指示存储器单元页中的存储器单元的MSB是否已被编程的MSB标志，对多个第一位线执行第一次读取，根据MSB的读取值设置目标电压标志，将目标电压施加到多个第二位线，并且对于多个第二位线执行第二读取。

3. 发明授权

US08471049B2 Precursors for depositing group 4 metal-containing films 有权
标题翻译：用于沉积第4组含金属膜的前体
公开(公告)号：US08471049B2
公开(公告)日：2013-06-25
申请号：US12629416
申请日：2009-12-02
申请人： Xinjian Lei , Daniel P. Spence , Moo-Sung Kim , Iain Buchanan , Laura M. Matz , Sergei Vladimirovich Ivanov
发明人： Xinjian Lei , Daniel P. Spence , Moo-Sung Kim , Iain Buchanan , Laura M. Matz , Sergei Vladimirovich Ivanov
IPC分类号： C07F7/28 , C23C16/00
CPC分类号： C23C16/455 , C07F7/003 , C23C16/18 , C23C16/40
摘要： Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I: wherein M comprises a metal chosen from Ti, Zr, and Hf; R and R1 are each independently selected from an alkyl group comprising from 1 to 10 carbon atoms; R2 is an alkyl group comprising from 1 to 10 carbon atoms; R3 is chosen from hydrogen or an alkyl group comprising from 1 to 3 carbon atoms; R4 is an alkyl group comprising from 1 to 6 carbon atoms and wherein R2 and R4 are different alkyl groups. Also described herein are methods for making Group 4 metal-containing precursors and methods for depositing films using the Group 4 metal-containing precursors.
摘要翻译：本文描述的是含有第4族金属的前体，包含第4族金属的前体的组合物，以及用于在基材上制造含适形金属的膜的沉积工艺。一方面，含4族金属的前体由下式I表示：其中M包括选自Ti，Zr和Hf的金属; R和R 1各自独立地选自包含1至10个碳原子的烷基; R 2是包含1至10个碳原子的烷基; R3选自氢或包含1至3个碳原子的烷基; R4是包含1至6个碳原子的烷基，其中R2和R4是不同的烷基。本文还描述了制备含有第4族金属的前体的方法以及使用含有第4族金属的前体沉积膜的方法。

4. 发明授权

US08441856B2 Method of providing an operating voltage in a memory device and a memory controller for the memory device 有权
公开(公告)号：US08441856B2
公开(公告)日：2013-05-14
申请号：US13289282
申请日：2011-11-04
申请人： Moo Sung Kim , Wook Ghee Hahn
发明人： Moo Sung Kim , Wook Ghee Hahn
IPC分类号： G11C16/04
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/0483 , G11C16/10
摘要： A method of providing an operating voltage in a memory device includes applying a read voltage to a selected word line while applying a first pass voltage to at least one unselected word line among word lines adjacent to the selected word line; and while applying a second pass voltage to the remaining unselected word lines (other than the at least one unselected word line to which the first pass voltage is applied). The level of the first pass voltage is higher than the level of the second pass voltage. The level of the first pass voltage may be set based on the level of the read voltage.

5. 发明申请

US20110281940A1 METHOD OF PREPARATION AN INCLUSION-COMPLEX COMPRISING HYDROPHOBIC PHYSIOLOGICAL ACTIVATION MATERIAL INCLUDING WITH CYCLODEXTRIN AND ITS USE 有权
标题翻译：制备含有环糊精生物活性物质的包含复合物的方法，包括环糊精及其用途
公开(公告)号：US20110281940A1
公开(公告)日：2011-11-17
申请号：US12674853
申请日：2008-09-03
申请人： Moo-Sung Kim , Sang-Rin Lee , Yong-Dae Park
发明人： Moo-Sung Kim , Sang-Rin Lee , Yong-Dae Park
IPC分类号： A61K8/73 , A61Q19/08
CPC分类号： C08B37/0015 , A61K8/35 , A61K8/738 , A61Q19/08
摘要： Disclosed herein are a method for preparation of an inclusion-complex including a physiologically active hydrophobic substance in cjclodextrin and a derivative thereof, and use of the inclusion-complex prepared by the same. More particularly, the present invention provides a method for preparing an inclusion-complex, which includes agitating cjclodextrin and a derivative thereof in an agitator at high speed, spraying a physiologically active hydrophobic substance dissolved in alcohol onto the agitator, and drying and crushing the mixture obtained from the preceding step and, in addition, use of the prepared inclusion-complex. The present inventive method has merits of reduced inclusion time and increased inclusion rate. The prepared inclusion-complex has excellent cell and collagen proliferation effects compared to physiologically active hydrophobic substances which were not inclusion processed, thereby being used in production of a cosmetic composition with improved anti-wrinkle and anti-ageing effects.
摘要翻译：本文公开了一种包含复合物的包合物，其包括生物活性疏水性物质及其衍生物，以及由其制备的包合络合物的用途。更具体地说，本发明提供一种制备包合物的方法，其包括在搅拌器中高速搅拌环糊精及其衍生物，将溶解在醇中的生理活性疏水物质喷雾到搅拌器上，并干燥并粉碎混合物由上述步骤获得，另外使用制备的包合物。本发明的方法具有减少夹杂时间和增加包合率的优点。与未包含加工的生理活性疏水性物质相比，制备的包合络合物具有优异的细胞和胶原增殖效果，从而用于生产具有改善的抗皱和抗衰老作用的化妆品组合物。

6. 发明授权

US07983079B2 Nonvolatile semiconductor memory device and programming method thereof 有权
标题翻译：非易失性半导体存储器件及其编程方法
公开(公告)号：US07983079B2
公开(公告)日：2011-07-19
申请号：US12216591
申请日：2008-07-08
申请人： Moo-Sung Kim
发明人： Moo-Sung Kim
IPC分类号： G11C16/04
CPC分类号： G11C16/3454 , G11C11/5628 , G11C2211/5621
摘要： Provided is a program method of a multi-bit flash memory device. The program method includes correspondingly programming multi-bit data into selected memory cells through pluralities of programming loops. In each programming loop, an increment of a programming voltage applied to the selected memory cells is variable in accordance with a result of program-verification to each of data states with the multi-bit data and the program-verification for the data state corresponding to program-pass is skipped if the result of the program-verification to the data state is passed.
摘要翻译：提供了一种多位闪存器件的编程方法。程序方法包括通过多个编程循环相应地将多位数据编程到所选存储单元中。在每个编程环路中，施加到所选择的存储器单元的编程电压的增量根据对多数据数据的每个数据状态的程序验证的结果以及对应于数据状态的数据状态的程序验证而变化如果通过对数据状态的程序验证的结果，则跳过程序通过。

7. 发明授权

US07889592B2 Non-volatile memory device and a method of programming the same 有权
标题翻译：非易失性存储器件及其编程方法
公开(公告)号：US07889592B2
公开(公告)日：2011-02-15
申请号：US12219359
申请日：2008-07-21
申请人： Moo-Sung Kim
发明人： Moo-Sung Kim
IPC分类号： G11C8/00
CPC分类号： G11C16/24 , G11C16/3454
摘要： Provided are a non-volatile memory device and a method of programming the same. The method includes: performing a program operation; performing a program verify read operation; and performing a pass/fail determine operation simultaneously with one of a verify recovery operation and a bit line setup operation, after the performing of the program verify read operation.
摘要翻译：提供了一种非易失性存储器件及其编程方法。该方法包括：执行程序操作; 执行程序验证读操作; 以及在执行程序验证读取操作之后，与验证恢复操作和位线设置操作中的一个同时执行通过/失败确定操作。

8. 发明申请

US20110027960A1 Methods of Forming Strontium Titanate Films 有权
标题翻译：形成钛酸锶薄膜的方法
公开(公告)号：US20110027960A1
公开(公告)日：2011-02-03
申请号：US12793611
申请日：2010-06-03
申请人： Laura M. Matz , Xiangxin Rui , Xinjian Lei , Sunil Shanker , Moo-Sung Kim , Nobi Fuchigami , Iain Buchanan , Anh Duong , Sandra Malhotra , Imran Hashim
发明人： Laura M. Matz , Xiangxin Rui , Xinjian Lei , Sunil Shanker , Moo-Sung Kim , Nobi Fuchigami , Iain Buchanan , Anh Duong , Sandra Malhotra , Imran Hashim
IPC分类号： H01L21/285 , H01L21/02
CPC分类号： C23C16/45531 , C23C16/409 , H01L21/02197 , H01L21/0228 , H01L21/02356 , H01L21/3142 , H01L21/31691 , H01L28/56
摘要： Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.
摘要翻译：本发明的实施方案包括使用原子层沉积（ALD）形成钛酸锶（SrTiO 3）膜的方法。更具体地说，该方法包括使用ALD形成多个氧化钛（TiO 2）单元膜并使用ALD形成多个氧化锶（SrO）单元膜。 TiO 2和SrO单元膜的组合厚度小于约5埃。然后将TiO 2和SrO单元膜退火以形成钛酸锶层。

9. 发明授权

US07821836B2 Flash memory device and method in which trim information is stored in memory cell array 有权
标题翻译：闪存设备和其中修剪信息存储在存储单元阵列中的方法
公开(公告)号：US07821836B2
公开(公告)日：2010-10-26
申请号：US12166364
申请日：2008-07-02
申请人： Moo-Sung Kim , Young-Ho Lim
发明人： Moo-Sung Kim , Young-Ho Lim
IPC分类号： G11C16/06 , G11C16/04
CPC分类号： G11C16/10 , G11C16/20 , G11C16/32
摘要： A flash memory device which includes a memory cell array which stores data and trim information, and control logic which controls programming, erasing, and reading modes of the memory cell array. The control logic is operative to receive the trim information from the memory cell array in a power-up mode, and to optimize operational time periods of the programming, erasing, and reading modes in accordance with the trim information.
摘要翻译：包括存储数据和修剪信息的存储单元阵列的闪速存储器件，以及控制存储单元阵列的编程，擦除和读取模式的控制逻辑。控制逻辑可操作以在上电模式下从存储器单元阵列接收修剪信息，并且根据修剪信息优化编程，擦除和读取模式的操作时间段。

10. 发明申请

US20090244967A1 FLASH MEMORY DEVICE HAVING DUMMY CELLS AND METHOD OF OPERATING THE SAME 有权
标题翻译：具有DUMMY电池的闪存存储器件及其操作方法
公开(公告)号：US20090244967A1
公开(公告)日：2009-10-01
申请号：US12407393
申请日：2009-03-19
申请人： Moo-Sung KIM , Young-Ho LIM
发明人： Moo-Sung KIM , Young-Ho LIM
IPC分类号： G11C16/06
CPC分类号： G11C16/0483 , G11C11/5642 , G11C16/3454 , G11C16/3459 , G11C2211/5621 , G11C2211/5634
摘要： Disclosed is a flash memory device having multiple strings, where each string includes first memory cells and second memory cells. One second memory cell of the second memory cells in each string is set to a programmed state, and remaining second memory cells are set to an erased state.
摘要翻译：公开了一种具有多个串的闪速存储器件，其中每个串包括第一存储器单元和第二存储器单元。每个串中的第二存储单元的一秒存储单元被设置为编程状态，剩余的第二存储单元被设置为擦除状态。

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