专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4685120A Electronic trigger switch for maintenance termination unit 失效
标题翻译：电子触发开关用于维护终端单元
公开(公告)号：US4685120A
公开(公告)日：1987-08-04
申请号：US801758
申请日：1985-11-26
申请人： Richard G. Norris , Monty F. Webb , Vinh Q. Le
发明人： Richard G. Norris , Monty F. Webb , Vinh Q. Le
IPC分类号： H03K17/30 , H04M3/30 , H04B3/46
CPC分类号： H04M3/301 , H03K17/305
摘要： A telephone maintenance termination unit utilizes a low voltage, bidirectional trigger switch. The trigger switch provides low voltage, low current triggering in conjunction with a high holding current requirement. The trigger switch may comprise either two silicon controlled rectifiers connected in inverse parallel relationship with their gates connected, a bidirectional diffused PNPN semiconductor device, or an NPN semiconductor device, any one of which is used to trigger a power control TRIAC. In another embodiment, the switching device may be a two-terminal, unitary semiconductor device incorporating the functions of both the TRIAC and the bidirectional trigger switch.
摘要翻译：电话维护终端单元利用低电压双向触发开关。触发开关结合高保持电流要求提供低电压，低电流触发。触发开关可以包括与其连接的反向并联关系连接的两个可控硅整流器，双向扩散PNPN半导体器件或NPN半导体器件，其中任何一个用于触发功率控制TRIAC。在另一个实施例中，开关器件可以是并入TRIAC和双向触发开关两者的功能的双端整体半导体器件。

2. 发明授权

US5479031A Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value 失效
标题翻译：四层过电压保护装置具有与短路点对准的掩埋区域，以提高过冲电压值的精度
公开(公告)号：US5479031A
公开(公告)日：1995-12-26
申请号：US119812
申请日：1993-09-10
申请人： Monty F. Webb , Elmer L. Turner
发明人： Monty F. Webb , Elmer L. Turner
IPC分类号： H01L29/74 , H01L21/822 , H01L23/62 , H01L27/04 , H01L29/747 , H01L29/861 , H01L29/866 , H01L29/87
CPC分类号： H01L29/87 , Y10S257/914
摘要： An overvoltage protection device having multiple shorting dots in the emitter region and multiple buried regions substantially aligned with these shorting dots. The placement, number, and area of these buried regions reduce and more accurately set the overshoot voltage value of the device while maintaining the high surge capacities of the device. Further, doping types and concentrations have been modified from that known in the prior art to reduce overshoot providing a more accurate and sensitive overvoltage protection device than that known previously in the prior art.
摘要翻译：一种过电压保护装置，其在发射极区域具有多个短路点，并且多个掩埋区域与这些短路点基本对齐。这些掩埋区域的布置，数量和面积减小并且更精确地设置器件的过冲电压值，同时保持器件的高浪涌电容。此外，掺杂类型和浓度已经从现有技术中已知的掺杂类型和浓度进行了修改，以减少过冲，提供比现有技术中先前已知的过电压保护器件更精确和灵敏的过电压保护器件。

3. 发明授权

US4827497A Electronic trigger switch for maintenance termination unit 失效
标题翻译：电子触发开关用于维护终端单元
公开(公告)号：US4827497A
公开(公告)日：1989-05-02
申请号：US224201
申请日：1988-07-21
申请人： Richard G. Norris , Monty F. Webb , Vinh Q. Le
发明人： Richard G. Norris , Monty F. Webb , Vinh Q. Le
IPC分类号： H03K17/30 , H04M3/30 , H04B3/46
CPC分类号： H03K17/305 , H04M3/301
摘要： A telephone maintenance termination unit utilizes a low voltage, bidirectional trigger switch for performing diagnostic functions on a telephone line. The trigger switch provides low voltage, low current triggering in conjunction with a high holding current requirement. The trigger switch may comprise either two silicon controlled rectifiers connected in inverse parallel relationship with their gates connected, a bidirectional diffused PNPN semiconductor device, or an NPN semiconductor device, any one of which is used to trigger a power control TRIAC. In another embodiment, the switching device may be a two-terminal, unitary semiconductor device incorporating the functions of both the TRIAC and the bidirectional trigger switch.
摘要翻译：电话维护终端单元利用低电压双向触发开关在电话线上执行诊断功能。触发开关结合高保持电流要求提供低电压，低电流触发。触发开关可以包括与其连接的反向并联关系连接的两个可控硅整流器，双向扩散PNPN半导体器件或NPN半导体器件，其中任何一个用于触发功率控制TRIAC。在另一个实施例中，开关器件可以是并入TRIAC和双向触发开关两者的功能的双端整体半导体器件。

4. 发明授权

US4380114A Method of making a semiconductor switching device 失效
标题翻译：制造半导体开关器件的方法
公开(公告)号：US4380114A
公开(公告)日：1983-04-19
申请号：US236258
申请日：1981-02-20
申请人： Monty F. Webb
发明人： Monty F. Webb
IPC分类号： H01L29/417 , H01L29/747 , H01L21/603 , H01L21/28 , H01L21/302 , H01L21/56
CPC分类号： H01L29/747 , H01L24/36 , H01L24/37 , H01L24/40 , H01L24/41 , H01L29/41716 , H01L2224/32145 , H01L2224/37011 , H01L2224/40095 , H01L2224/40245 , H01L2224/4103 , H01L2924/10253 , H01L2924/12036 , H01L2924/13033 , H01L2924/181
摘要： A triac device includes a first silicon chip having regions of alternate conductivity type disposed in a PN-junction forming relationship which defines a center-fired triac. A second silicon chip having regions defining a diac is bonded to the gate region of the triac chip. A copper layer of about 1 to 5 mils in thickness is bonded to the portions of the top major face of the triac chip that surround the gate region. Cathode, anode and gate connections are provided to the two-chip subassembly which is then encapsulated. The copper layer permits a smaller cathode connection to be made to the top of the triac chip without reducing the current capacity of the device.The triac device is mass-produced by first forming a plurality of triac chips in a two-dimensional array in a large area silicon wafer. The copper layers and diac chips are formed on the wafer prior to its separation into separate diac-triac chip subassemblies.
摘要翻译：三端双向可控硅开关元件装置包括具有交替导电类型区域的第一硅芯片，其以定义中心点火三端双向可控硅开关的PN结形成关系布置。具有限定双向晶闸管的区域的第二硅芯片被接合到三端双向串联芯片的栅极区域。约1至5密耳厚度的铜层结合到围绕栅极区域的三端双向串联芯片的顶部主面的部分。阴极，阳极和栅极连接提供给双芯片子组件，然后封装。铜层允许在三端双向串联芯片的顶部形成更小的阴极连接，而不会降低器件的电流容量。通过首先在大面积硅晶片中以二维阵列形成多个三端双向可控硅开关芯片芯片，大量生产三端双向可控硅开关元件装置。在分离成单独的双向晶闸管芯片组件之前，在晶片上形成铜层和diac芯片。

5. 发明授权

US06980647B1 Primary telephone line protector with failsafe 失效
标题翻译：主要电话线路保护器具有故障安全
公开(公告)号：US06980647B1
公开(公告)日：2005-12-27
申请号：US09481460
申请日：2000-01-11
申请人： Darren J. Daugherty , Dennis M. McCoy , by Carol G. McCoy , Monty F. Webb , Paul A. Langer , Kurt A. Wattelet
发明人： Darren J. Daugherty , Dennis M. McCoy , by Carol G. McCoy , Monty F. Webb , Paul A. Langer , Kurt A. Wattelet
IPC分类号： H04M1/00 , H04M9/00 , H04M9/08 , H04M19/00
CPC分类号： H04M19/00
摘要： Disclosed is a module (10) having pins (16-24) connected to respective conductor tower strips (46, 48, 50, 52). Pairs (46, 50 and 48, 52) of the conductor tower strips are spring biased toward each other to capture therebetween respective PTC current limiting elements (64, 70). A spring member 60 is connected to a ground pin (24) at one end, and to an overvoltage sensitive assembly at the other end, via a soldered heat transfer member (92). The overvoltage sensitive assembly includes overvoltage semiconductor devices (76, 77, 79) soldered thereto. When an overvoltage condition is sensed, the heat generated by the devices melts the solder between the heat transfer member (92) and the spring member (60), whereby lateral arms (90) of the spring member (60) move and engage the conductor tower strips (50, 52). The tip and ring pins (16, 18) of the module (10) are not only shorted together, but are shorted to ground.
摘要翻译：公开了一种具有连接到相应的导体塔条（46,48,50,52）上的引脚（16-24）的模块（10）。导体塔条的对（46,50和48,52）朝向彼此弹簧偏置以在其间捕获相应的PTC限流元件（64,70）。弹簧构件60通过焊接传热构件（92）在一端连接到接地销（24），并在另一端连接到过电压敏感组件。过电压敏感组件包括焊接到其上的过电压半导体器件（76,77,79）。当检测到过电压状态时，由器件产生的热量在传热部件（92）和弹簧部件（60）之间熔化焊料，由此弹簧部件（60）的横向臂（90）移动并接合导体塔条（50,52）。模块（10）的尖端和环形销（16,18）不仅短路在一起，而且与地面短路。

6. 发明授权

US5516705A Method of forming four layer overvoltage protection device 失效
标题翻译：形成四层过电压保护装置的方法
公开(公告)号：US5516705A
公开(公告)日：1996-05-14
申请号：US449813
申请日：1995-05-24
申请人： Monty F. Webb , Elmer L. Turner
发明人： Monty F. Webb , Elmer L. Turner
IPC分类号： H01L29/74 , H01L21/822 , H01L23/62 , H01L27/04 , H01L29/747 , H01L29/861 , H01L29/866 , H01L29/87 , H01L49/00
CPC分类号： H01L29/87 , Y10S257/914
摘要： An overvoltage protection device having multiple shorting dots in the emitter region and multiple buried regions substantially aligned with these shorting dots. The placement, number, and area of these buried regions reduce and more accurately set the overshoot voltage value of the device while maintaining the high surge capacities of the device. Further, doping types and concentrations have been modified from that known in the prior art to reduce overshoot providing a more accurate and sensitive overvoltage protection device than that known previously in the prior art.
摘要翻译：一种过电压保护装置，其在发射极区域具有多个短路点，并且多个掩埋区域与这些短路点基本对齐。这些掩埋区域的布置，数量和面积减小并且更精确地设置器件的过冲电压值，同时保持器件的高浪涌电容。此外，掺杂类型和浓度已经从现有技术中已知的掺杂类型和浓度进行了修改，以减少过冲，提供比现有技术中先前已知的过电压保护器件更精确和灵敏的过电压保护器件。

7. 发明授权

US4914045A Method of fabricating packaged TRIAC and trigger switch 失效
标题翻译：制造包装TRIAC和触发开关的方法
公开(公告)号：US4914045A
公开(公告)日：1990-04-03
申请号：US193193
申请日：1988-05-09
申请人： Monty F. Webb , Vinh Q. Le , Elmer L. Turner, Jr.
发明人： Monty F. Webb , Vinh Q. Le , Elmer L. Turner, Jr.
IPC分类号： H01L23/495 , H01L29/87
CPC分类号： H01L29/87 , H01L23/49562 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L24/45 , H01L24/48 , H01L29/0626 , H01L29/0649 , H01L29/0661 , H01L2924/00014 , H01L2924/01014 , H01L2924/10157 , H01L2924/10158 , H01L2924/12036 , H01L2924/13033 , H01L2924/13034 , H01L2924/14 , Y10S148/126
摘要： A two-terminal, bidirectional semiconductor trigger switch is provided. The trigger switch is a relatively sensitive multilayer semiconductor breakover device that switches on fully when its breakover voltage is reached. The design of the trigger switch allows its breakover voltage point to be readily adjustable during fabrication of the device.The semiconductor trigger switch is particularly suited to provide a low voltage trigger for a TRIAC. The trigger switch is connected in series with the gate of the TRIAC and mounted on the gate lead to provide a unitary, three-terminal device incorporating the TRIAC/trigger switch combination.
摘要翻译：提供双端双向半导体触发开关。触发开关是一种相对敏感的多层半导体断路装置，当达到其转折电压时，它将全部接通。触发开关的设计允许其在制造装置期间能够容易地调节其断开电压点。半导体触发开关特别适用于为TRIAC提供低电压触发。触发开关与TRIAC的栅极串联连接，并安装在栅极引线上，提供了一个结合TRIAC /触发开关组合的整体式三端器件。

8. 发明授权

US4905119A Solid state overvoltage protection circuit 失效
标题翻译：固态过压保护电路
公开(公告)号：US4905119A
公开(公告)日：1990-02-27
申请号：US212195
申请日：1988-06-27
申请人： Monty F. Webb
发明人： Monty F. Webb
IPC分类号： G06F1/30 , H02H9/04 , H04M3/18
CPC分类号： H02H9/04 , H04M3/18
摘要： An overvoltage protection circuit for electronic equipment having tip and ring lines includes a first voltage sensitive switch having first and second teminals. The first terminal of the first switch is connected to the tip line. A second voltage sensitive switch includes first and second terminals. The first terminal of the second switch is connected to the second terminal of the first switch, and the second terminal thereof is connected to the ring line. A third voltage sensitive switch includes first and second terminals. The first terminal of the third switch is connected to the second terminal of the first switch and to the first terminal of the second switch. The second terminal of the third switch is connected to ground potential. The switches are conductive when a respective voltage threshold is exceeded.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式