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    • 2. 发明授权
    • Transistor-level timing analysis using embedded simulation
    • 使用嵌入式仿真的晶体管级定时分析
    • US07647220B2
    • 2010-01-12
    • US10042512
    • 2001-10-18
    • Pawan KulshreshthaRobert J. PalermoMohammad MortazaviCyrus BamjiHakan Yalcin
    • Pawan KulshreshthaRobert J. PalermoMohammad MortazaviCyrus BamjiHakan Yalcin
    • G06F17/50
    • G06F17/5022
    • A high accuracy method for transistor-level static timing analysis is disclosed. Accurate static timing verification requires that individual gate and interconnect delays be accurately calculated. At the sub-micron level, calculating gate and interconnect delays using delay models can result in reduced accuracy. Instead, the proposed method calculates delays through numerical integration using an embedded circuit simulator. It takes into account short circuit current and carefully chooses the set of conditions that results in a tight upper bound of the worst case delay for each gate. Similar repeating transistor configurations of gates in the circuit are automatically identified and a novel interpolation based caching scheme quickly computes gate delays from the delays of similar gates. A tight object code level integration with a commercial high speed transistor-level circuit simulator allows efficient invocation of the simulation.
    • 公开了一种用于晶体管级静态时序分析的高精度方法。 精确的静态定时验证要求精确计算各个门和互连延迟。 在亚微米级,使用延迟模型计算门和互连延迟可能导致精度降低。 相反,所提出的方法通过使用嵌入式电路模拟器的数值积分来计算延迟。 考虑到短路电流,并仔细选择导致每个门极差延迟严格上限的一组条件。 自动识别电路中相似的重复晶体管配置,并且一种新颖的基于插值的缓存方案可以从相似门的延迟中快速计算门延迟。 与商用高速晶体管级电路仿真器紧密的目标代码级集成可以有效地调用仿真。