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    • 1. 发明授权
    • Method for forming micro-patterns by development
    • 通过开发形成微观图案的方法
    • US4690887A
    • 1987-09-01
    • US800100
    • 1985-11-22
    • Mitsutoshi FukudaMakoto FukutomiOsamu KogureKazunori Miyoshi
    • Mitsutoshi FukudaMakoto FukutomiOsamu KogureKazunori Miyoshi
    • G03F7/26G03F7/016G03F7/038G03F7/32G03C5/00
    • G03F7/038G03F7/325
    • Disclosed is a method for forming micro-patterns on base plates such as for semiconductor integrated circuits, particularly by development, wherein a radiation sensitive negative resist film is formed on the base plate and irradiated according to pattern designs, and the non-irradiated portions of the film is dissolved by a liquid developer comprising a mixture of a good solvent selected from the group of alkyl esters of acetic acid, having an alkyl group containing 1 to 5 carbon atoms, and a poor solvent selected from the group consisting of alicyclic compounds and alkyl ethers of ethyleneglycol having an alkyl group containing 1 to 5 carbon atoms. The method can minimize swelling of irradiated portions of the resist film and can accelerate dissolution of non-irradiated portions of the resist film, so that desired micro-patterns with excellent edge shape quality can be obtained.
    • 公开了一种在半导体集成电路,特别是用于半导体集成电路的基板上形成微图形的方法,其中在基板上形成辐射敏感的负型抗蚀剂膜并根据图案设计照射,并且未照射部分 该膜由液体显影剂溶解,该液体显影剂包括选自乙酸的烷基酯,具有1至5个碳原子的烷基的良溶剂和选自脂环族化合物和 具有1〜5个碳原子的烷基的乙二醇的烷基醚。 该方法可以使抗蚀剂膜的照射部分的溶胀最小化,并且可以加速抗蚀剂膜的未照射部分的溶解,从而可以获得具有优异的边缘形状质量的期望的微图案。