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1. 发明授权

US4107472A Semiconductor channel switch 失效
标题翻译：半导体通道开关
公开(公告)号：US4107472A
公开(公告)日：1978-08-15
申请号：US707352
申请日：1976-07-21
申请人： Mitsuru Kawanami , Shinzi Okuhara , Takuzi Mukaemachi
发明人： Mitsuru Kawanami , Shinzi Okuhara , Takuzi Mukaemachi
IPC分类号： H03K17/735 , H04Q3/52 , H04Q3/50
CPC分类号： H04Q3/521 , H03K17/735
摘要： A plurality of PNPN switches, each permitting current flow in either, i.e., positive or negative, direction, are arranged at the cross points between the rows and the columns of the speech paths so as to form a matrix. The gate trigger terminal of each PNPN switch is connected with a gating current circuit having a high impedance, which circuit is adapted to control ON and OFF operations of the switch. A plurality of means are provided to selectively turn the gate current circuits on and off so that gate current is supplied continuously for the gate terminal of any desired PNPN switch at least for the time during which the corresponding cross point of the matrix is to be electrically bridged.
摘要翻译：多个PNPN开关，每个允许电流在任一方向，即正或负方向流动，布置在语音路径的行和列之间的交叉点处，以形成矩阵。每个PNPN开关的门极触发端子与具有高阻抗的选通电流电路连接，该电路适于控制开关的导通和截止操作。提供了多个装置以选择性地打开和关闭栅极电流电路，使得至少在矩阵的对应交叉点电气地连续地为任何期望的PNPN开关的栅极端子提供栅极电流桥接

2. 发明授权

US4125787A Semiconductor switch circuit 失效
标题翻译：半导体开关电路
公开(公告)号：US4125787A
公开(公告)日：1978-11-14
申请号：US790938
申请日：1977-04-26
申请人： Ichiro Ohhinata , Shinzi Okuhara , Mitsuru Kawanami , Michio Tokunaga
发明人： Ichiro Ohhinata , Shinzi Okuhara , Mitsuru Kawanami , Michio Tokunaga
IPC分类号： H02M1/06 , H02M1/08 , H03K17/60 , H03K17/615 , H03K17/73 , H03K17/72
CPC分类号： H03K17/615 , H03K17/60 , H03K17/73
摘要： A semiconductor switch circuit comprises a PNPN switch with a PNPN semiconductor four-layered structure equivalently including first and second transistors and a gate terminal, a load current dividing circuit including at least one transistor, a variable impedance bypass circuit including at least one transistor, and a capacitive element. The base and the collector of the transistor included in the load current dividing circuit are connected to the cathode and the anode of the PNPN switch, respectively. The collector and the emitter of the transistor included in the variable impedance bypass circuit are connected to the P-type base of the second transistor of the PNPN switch and to the emitter of the transistor of the load-current-dividing circuit, respectively. The base of the transistor of the variable impedance bypass circuit is connected to the anode of the PNPN switch through the capacitive element and is controlled for gate turn-off operation. The PNPN switch having self-holding ability is combined with a transistor which does not have self-holding ability but current-amplifying ability to divide the load current into a current flowing through the PNPN switch and a collector current of the transistor. No large load current is imposed on the PNPN switch but most of the load current is passed through the transistors thereby to facilitate gate turn-off operation. Further, the PNPN switch is protected against the rate effect by use of the variable impedance bypass circuit. Thus both large and small load currents can be controlled with a small self-holding current.
摘要翻译：半导体开关电路包括具有PNPN半导体四层结构的PNPN开关，其等效地包括第一和第二晶体管和栅极端子，负载电流分配电路包括至少一个晶体管，包括至少一个晶体管的可变阻抗旁路电路和电容元件。包括在负载分流电路中的晶体管的基极和集电极分别连接到PNPN开关的阴极和阳极。包含在可变阻抗旁路电路中的晶体管的集电极和发射极分别连接到PNPN开关的第二晶体管的P型基极和负载分流电路的晶体管的发射极。可变阻抗旁路电路的晶体管的基极通过电容元件连接到PNPN开关的阳极，并被控制用于栅极关断操作。具有自保持能力的PNPN开关与不具有自持能力但是将负载电流分流成流过PNPN开关的电流和晶体管的集电极电流的电流放大能力的晶体管组合。对PNPN开关没有施加大的负载电流，但是大部分负载电流通过晶体管，从而便于关闭关断操作。此外，PNPN开关通过使用可变阻抗旁路电路来防止速率效应。因此，可以用小的自保持电流来控制大小负载电流。

3. 发明授权

US4071779A Semiconductor switch 失效
标题翻译：半导体开关
公开(公告)号：US4071779A
公开(公告)日：1978-01-31
申请号：US715156
申请日：1976-08-17
申请人： Mitsuru Kawanami , Ichiro Ohhinata , Shinzi Okuhara
发明人： Mitsuru Kawanami , Ichiro Ohhinata , Shinzi Okuhara
IPC分类号： H02M1/08 , H03K17/0812 , H03K17/16 , H03K17/73 , H03K17/02 , H03K17/60
CPC分类号： H03K17/08124 , H03K17/73
摘要： A semiconductor switch of a PNPN structure comprises a PNPN switch of an equivalently four-layered structure including a P-type anode, N-type cathode, N-type gate and P-type gate, a first NPN transistor, a second PNP transistor, a level shifting circuit, and an impedance element, wherein the impedance element is connected between the collector and emitter of the first transistor, the first transistor has its collector and emitter connected to the P-type gate and N-type cathode respectively, and the second transistor has its emitter and base connected to the P-type anode and N-type gate, respectively, and has its collector connected to the base of the first transistor through the level shifting circuit. In this arrangement, the first transistor is driven by the current flowing through a PN junction at the end on the side of the anode of the PNPN switch and the level shifting circuit, so that the semiconductor switch has a great dv/dt withstanding power, operates with high sensitivity, has a high breakdown voltage in both directions and facilitates the setting of circuit constants.
摘要翻译： PNPN结构的半导体开关包括具有P型阳极，N型阴极，N型栅极和P型栅极的等效四层结构的PNPN开关，第一NPN晶体管，第二PNP晶体管，电平移动电路和阻抗元件，其中阻抗元件连接在第一晶体管的集电极和发射极之间，第一晶体管的集电极和发射极分别连接到P型栅极和N型阴极，第二晶体管的发射极和基极分别连接到P型阳极和N型栅极，并且其集电极通过电平移位电路连接到第一晶体管的基极。在这种布置中，第一晶体管由流过PNPN开关和电平移动电路的阳极侧端部的PN结的电流驱动，使得半导体开关具有很好的dv / dt承受功率，以高灵敏度工作，在两个方向上具有高击穿电压，并有助于设置电路常数。

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