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1. 发明授权

US08791473B2 Nitride semiconductor light-emitting element, illuminating device, liquid crystal display device, method for producing nitride semiconductor light-emitting element and method for manufacturing illuminating device 有权
标题翻译：氮化物半导体发光元件，照明装置，液晶显示装置，氮化物半导体发光元件的制造方法及照明装置的制造方法
公开(公告)号：US08791473B2
公开(公告)日：2014-07-29
申请号：US13256529
申请日：2009-07-09
申请人： Toshiya Yokogawa , Akira Inoue , Masaki Fujikane , Mitsuaki Oya , Atsushi Yamada , Tadashi Yano
发明人： Toshiya Yokogawa , Akira Inoue , Masaki Fujikane , Mitsuaki Oya , Atsushi Yamada , Tadashi Yano
IPC分类号： H01L33/32
CPC分类号： H01L25/0753 , H01L33/16 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An illuminating device according to the present invention includes at least a first nitride-based semiconductor light-emitting element and a second nitride-based semiconductor light-emitting element, in which: the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each include a semiconductor chip; the semiconductor chip includes a nitride-based semiconductor multilayer structure 45 formed from an AlxInyGazN (x+y+z=1, x≧0, y≧0, z≧0) semiconductor, and the nitride-based semiconductor multilayer structure 20 includes an active layer region 24 having an m-plane as an interface; the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each emit polarized light from the active layer region 24; and, when the polarized light emitted from the first nitride-based semiconductor light-emitting element and the polarized light emitted from the second nitride-based semiconductor light-emitting element have wavelengths λ1 and λ2, respectively, and thicknesses of the semiconductor chips 45 of the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element are given as d1 and d2, respectively, the following relations are satisfied: λ1
摘要翻译：根据本发明的照明装置至少包括第一氮化物基半导体发光元件和第二氮化物基半导体发光元件，其中：第一氮化物基半导体发光元件和第二氮化物半导体发光元件半导体发光元件各自包括半导体芯片; 半导体芯片包括由Al x In y Ga z N（x + y + z = 1，x≥0，y≥0，z≥0）形成的氮化物基半导体多层结构45，氮化物类半导体多层结构20包括具有m面作为界面的有源层区域24; 第一氮化物系半导体发光元件和第二氮化物系半导体发光元件均从有源层区域24发射偏振光; 并且当从第一氮化物基半导体发光元件发射的偏振光和从第二氮化物基半导体发光元件发出的偏振光分别具有波长λ1和λ2时，半导体芯片45的厚度第一氮化物系半导体发光元件和第二氮化物系半导体发光元件分别赋予d1和d2，满足以下关系：λ1<λ2和d1

2. 发明授权

US08729579B2 Nitride-based semiconductor light-emitting element, lighting device, liquid crystal display device, and method for producing lighting device 有权
标题翻译：氮化物系半导体发光元件，照明装置，液晶显示装置及照明装置的制造方法
公开(公告)号：US08729579B2
公开(公告)日：2014-05-20
申请号：US13432022
申请日：2012-03-28
申请人： Toshiya Yokogawa , Akira Inoue , Masaki Fujikane , Mitsuaki Oya , Atsushi Yamada , Tadashi Yano
发明人： Toshiya Yokogawa , Akira Inoue , Masaki Fujikane , Mitsuaki Oya , Atsushi Yamada , Tadashi Yano
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , G02F1/133603 , H01L21/0254 , H01L21/02609 , H01L33/007 , H01L33/18 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An illuminating device includes at least first and second nitride-based semiconductor light-emitting elements each having a semiconductor chip with an active layer region. The active layer region is at an angle of 1° or more with an m plane, and an angle formed by a normal line of a principal surface in the active layer region and a normal line of the m plane is 1° or more and 5° or less. The first and second nitride-based semiconductor light-emitting elements have thicknesses of d1 and d2, respectively, and emit the polarized light having wavelengths λ1 and λ2, respectively, where the inequalities of λ1
摘要翻译：照明装置至少包括第一和第二氮化物基半导体发光元件，每个半导体发光元件具有带有活性层区域的半导体芯片。有源层区域与m面成1°以上的角度，由有源层区域的主面的法线和m面的法线形成的角度为1°以上5 或更少。第一和第二氮化物基半导体发光元件分别具有d1和d2的厚度，并且分别发射波长λ1和λ2的偏振光，其中满足λ1<λ2和d1

3. 发明授权

US08357607B2 Method for fabricating nitride-based semiconductor device having electrode on m-plane 有权
标题翻译：一种在m面上具有电极的氮化物基半导体器件的制造方法
公开(公告)号：US08357607B2
公开(公告)日：2013-01-22
申请号：US12936960
申请日：2010-03-09
申请人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Ryou Kato
发明人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Ryou Kato
IPC分类号： H01L21/3205
CPC分类号： H01L33/40 , H01L33/16 , H01L33/32 , H01L2933/0016 , H01S5/0425 , H01S5/3202 , H01S5/32341
摘要： A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg alloy layer 32 which is formed of Mg and a metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：氮化物系半导体发光器件100包括其主表面是m面12的GaN衬底10，已经形成在GaN基衬底10的m面12上的半导体多层结构20 以及布置在半导体多层结构20上的电极30.电极30包括由Mg和选自Pt，Mo和Pd的金属形成的Mg合金层32。 Mg合金层32与半导体多层结构体20的p型半导体区域的表面接触。

4. 发明申请

US20120319156A1 NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：氮化物半导体元件及其制造方法
公开(公告)号：US20120319156A1
公开(公告)日：2012-12-20
申请号：US13596849
申请日：2012-08-28
申请人： Toshiya YOKOGAWA , Mitsuaki OYA , Atsushi YAMADA , Ryou KATO
发明人： Toshiya YOKOGAWA , Mitsuaki OYA , Atsushi YAMADA , Ryou KATO
IPC分类号： H01L33/30 , H01L33/50
CPC分类号： H01L33/40 , B82Y20/00 , H01L29/045 , H01L33/0075 , H01L33/0079 , H01L33/16 , H01L33/32 , H01L2933/0016 , H01S5/0425 , H01S5/32341
摘要： An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure 20 which has a p-type GaN-based semiconductor region whose surface 12 is inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is arranged on the p-type GaN-based semiconductor region. The electrode 30 includes a Mg alloy layer 32 which is formed from Mg and metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with the surface 12 of the p-type GaN-based semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：示例性的基于氮化物的半导体器件包括：氮化物基半导体多层结构20，其具有p型GaN基半导体区域，其表面12从m面倾斜不小于1°的角度，而不是更多超过5°或主表面具有多个m平面步骤; 以及布置在p型GaN基半导体区域上的电极30。电极30包括由Mg和选自Pt，Mo和Pd的金属形成的Mg合金层32。 Mg合金层32与半导体多层结构体20的p型GaN类半导体区域的表面12接触。

5. 发明授权

US08309984B2 Nitride-based semiconductor device having electrode on m-plane 有权
标题翻译：在m面上具有电极的氮化物半导体器件
公开(公告)号：US08309984B2
公开(公告)日：2012-11-13
申请号：US13167865
申请日：2011-06-24
申请人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Ryou Kato
发明人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Ryou Kato
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/16 , H01L33/32 , H01L2933/0016 , H01S5/0425 , H01S5/3202 , H01S5/32341
摘要： A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg alloy layer 32 which is formed of Mg and a metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：氮化物系半导体发光器件100包括其主表面是m面12的GaN衬底10，已经形成在GaN基衬底10的m面12上的半导体多层结构20 以及布置在半导体多层结构20上的电极30.电极30包括由Mg和选自Pt，Mo和Pd的金属形成的Mg合金层32。 Mg合金层32与半导体多层结构体20的p型半导体区域的表面接触。

6. 发明申请

US20120211725A1 NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：氮化物半导体元件及其制造方法
公开(公告)号：US20120211725A1
公开(公告)日：2012-08-23
申请号：US13503972
申请日：2011-03-15
申请人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Akihiro Isozaki
发明人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Akihiro Isozaki
IPC分类号： H01L33/06 , H01L21/20 , H01L29/15
CPC分类号： H01L21/02579 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L23/53247 , H01L33/0075 , H01L33/16 , H01L33/32 , H01L33/40 , H01L2224/13 , H01L2924/12032 , H01L2933/0016 , H01S5/0425 , H01S5/3202 , H01S5/32341 , H01L2924/00
摘要： A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5°; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x≧0, y≧0, and z≧0) layer 26. The electrode 30 includes a Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：本发明的氮化物系半导体器件包括：氮化物系半导体多层结构体20，其具有p型半导体区域，表面12从m面以不小于1°的角度倾斜1° 超过5°; 以及设置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z≥0）层26形成。电极30包括Mg层32和Ag层34 设置在Mg层32上.Mg层32与半导体多层结构体20的p型半导体区域的表面12接触。

7. 发明授权

US08110851B2 Nitride-based semiconductor device and method for fabricating the same 有权
标题翻译：基于氮化物的半导体器件及其制造方法
公开(公告)号：US08110851B2
公开(公告)日：2012-02-07
申请号：US13191026
申请日：2011-07-26
申请人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
发明人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
IPC分类号： H01L33/00 , H01L33/06
CPC分类号： H01L33/32 , H01L29/2003 , H01L33/0095 , H01L33/16 , H01L33/30 , H01L33/40 , H01L33/44 , H01L2224/14 , H01L2224/16225 , H01L2924/181 , H01L2924/00012
摘要： A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32, which contacts with the surface of a p-type semiconductor region in the semiconductor multilayer structure 20.
摘要翻译：氮化物系半导体发光器件100包括其主表面是m面12的GaN衬底10，已经形成在GaN基衬底10的m面12上的半导体多层结构20 以及布置在半导体多层结构体20上的电极30.电极30包括与半导体多层结构体20中的p型半导体区域的表面接触的Mg层32。

8. 发明申请

US20120002134A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, ILLUMINATING DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING ILLUMINATING DEVICE 有权
标题翻译：氮化物半导体发光元件，照明装置，液晶显示装置，用于制造氮化物半导体发光元件的方法和制造照明装置的方法
公开(公告)号：US20120002134A1
公开(公告)日：2012-01-05
申请号：US13256529
申请日：2009-07-09
申请人： Toshiya Yokogawa , Akira Inoue , Masaki Fujikane , Mitsuaki Oya , Atsushi Yamada , Tadashi Yano
发明人： Toshiya Yokogawa , Akira Inoue , Masaki Fujikane , Mitsuaki Oya , Atsushi Yamada , Tadashi Yano
IPC分类号： G02F1/1335 , H01L33/02
CPC分类号： H01L25/0753 , H01L33/16 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An illuminating device according to the present invention includes at least a first nitride-based semiconductor light-emitting element and a second nitride-based semiconductor light-emitting element, in which: the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each include a semiconductor chip; the semiconductor chip includes a nitride-based semiconductor multilayer structure 45 formed from an AlxInyGazN (x+y+z=1, x≧0, y≧0, z≧0) semiconductor, and the nitride-based semiconductor multilayer structure 20 includes an active layer region 24 having an m-plane as an interface; the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each emit polarized light from the active layer region 24; and, when the polarized light emitted from the first nitride-based semiconductor light-emitting element and the polarized light emitted from the second nitride-based semiconductor light-emitting element have wavelengths λ1 and λ2, respectively, and thicknesses of the semiconductor chips 45 of the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element are given as d1 and d2, respectively, the following relations are satisfied: λ1
摘要翻译：根据本发明的照明装置至少包括第一氮化物基半导体发光元件和第二氮化物基半导体发光元件，其中：第一氮化物基半导体发光元件和第二氮化物半导体发光元件半导体发光元件各自包括半导体芯片; 半导体芯片包括由Al x In y Ga z N（x + y + z = 1，x≥0，y≥0，z≥0）形成的氮化物基半导体多层结构45，氮化物类半导体多层结构20包括具有m面作为界面的有源层区域24; 第一氮化物系半导体发光元件和第二氮化物系半导体发光元件均从有源层区域24发射偏振光; 并且当从第一氮化物基半导体发光元件发射的偏振光和从第二氮化物基半导体发光元件发出的偏振光分别具有波长λ1和λ2时，半导体芯片45的厚度第一氮化物系半导体发光元件和第二氮化物系半导体发光元件分别赋予d1和d2，满足以下关系：λ1<λ2和d1

9. 发明申请

US20110156048A1 NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：基于氮化物的半导体器件及其制造方法
公开(公告)号：US20110156048A1
公开(公告)日：2011-06-30
申请号：US12679347
申请日：2009-06-04
申请人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
发明人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
IPC分类号： H01L29/207 , H01L21/20 , H01L21/283
CPC分类号： H01L33/32 , H01L29/2003 , H01L33/0095 , H01L33/16 , H01L33/30 , H01L33/40 , H01L33/44 , H01L2224/14 , H01L2224/16225 , H01L2924/181 , H01L2924/00012
摘要： A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32, which contacts with the surface of a p-type semiconductor region in the semiconductor multilayer structure 20.
摘要翻译：氮化物系半导体发光器件100包括其主表面是m面12的GaN衬底10，已经形成在GaN基衬底10的m面12上的半导体多层结构20 以及布置在半导体多层结构体20上的电极30.电极30包括与半导体多层结构体20中的p型半导体区域的表面接触的Mg层32。

10. 发明申请

US20110101372A1 NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：氮化物半导体元件及其制造方法
公开(公告)号：US20110101372A1
公开(公告)日：2011-05-05
申请号：US12993305
申请日：2010-03-16
申请人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Akihiro Isozaki
发明人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Akihiro Isozaki
IPC分类号： H01L29/66 , H01L33/02
CPC分类号： H01L33/40 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/16 , H01L33/32 , H01L2933/0016
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and a metal layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体层叠结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的金属层34.Zn层32与p型半导体区域的表面接触半导体多层结构20。

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