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1. 发明授权

US06797339B2 Method for forming thin film with a gas cluster ion beam 失效
标题翻译：用气体簇离子束形成薄膜的方法
公开(公告)号：US06797339B2
公开(公告)日：2004-09-28
申请号：US10351555
申请日：2003-01-27
申请人： Makoto Akizuki , Mitsuaki Harada , Atsumasa Doi , Isao Yamada
发明人： Makoto Akizuki , Mitsuaki Harada , Atsumasa Doi , Isao Yamada
IPC分类号： C23C1408
CPC分类号： C23C8/36 , C23C14/48 , H01J2237/0812 , H01L21/02238 , H01L21/31662 , H01L21/32105
摘要： A method of forming a thin film on the surface of a substrate such as silicon, in which a gas cluster (which is a massive atomic or molecular group of a reactive substance taking the gaseous form at room temperature under atmospheric pressure) is formed and then ionized, and the cluster ions are then irradiated onto a substrate surface under an acceleration voltage to cause a reaction. It is possible to form a high quality ultra-thin film having a very smooth interface, without causing any damage to the substrate, even at room temperature.
摘要翻译：在诸如硅的基板的表面上形成薄膜的方法，其中形成气体簇（其是在大气压下在室温下呈气态形式的反应物质的大量原子或分子基团），然后电离，然后在加速电压下将簇离子照射到基板表面上以引起反应。即使在基板表面上也可以形成具有非常光滑的界面的高质量超薄膜，而不会对基板造成任何损坏室内温度。

2. 发明授权

US06797334B2 Method for forming gas cluster and method for forming thin film 有权
标题翻译：形成气体簇的方法和形成薄膜的方法
公开(公告)号：US06797334B2
公开(公告)日：2004-09-28
申请号：US10648393
申请日：2003-08-27
申请人： Makoto Akizuki , Mitsuaki Harada , Satoru Ogasawara , Atsumasa Doi , Isao Yamada , Jiro Matsuo
发明人： Makoto Akizuki , Mitsuaki Harada , Satoru Ogasawara , Atsumasa Doi , Isao Yamada , Jiro Matsuo
IPC分类号： C23C1400
CPC分类号： B01J37/0215 , B01J37/347 , C07F17/00 , C08F4/65912 , C08F4/65916 , C08F10/02 , C23C14/0031 , C23C14/08 , C23C14/088 , C23C16/405 , C23C16/409 , C23C16/4482 , C23C16/513 , H01J2237/0812 , C08F4/6592
摘要： In order to deopsit a high-grade and extra-thin film without causing damage to the substrate at a relatively low temperature, the present invention provides a method for forming a cluster which is a lumpy group of atoms or molecules of a reactive substance at the room temperature under the atmospheric pressure, irradiating electrons onto clusters, irradiating the resulting cluster ions onto a substrate surface by accelerating by an acceleration voltage, and at the same time or alternately, irradiating one or more component gases of the deposit film onto the substrate surface, thereby depositing a thin film on the substrate surface through reaction.
摘要翻译：为了在较低的温度下对高品位和超薄的膜进行脱模而不会对基材造成损害，本发明提供了一种形成簇的方法，该簇是一组反应物质的原子或分子，在大气压下的室温下照射电子到簇上，通过加速电压加速照射所得到的簇离子到衬底表面，同时或者交替地将沉积膜的一种或多种组分气体照射到衬底表面上从而通过反应在衬底表面上沉积薄膜。

3. 发明授权

US06194752B1 Dielectric device, dielectric memory and method of fabricating the same 失效
标题翻译：电介质器件，介质存储器及其制造方法
公开(公告)号：US06194752B1
公开(公告)日：2001-02-27
申请号：US09094592
申请日：1998-06-15
申请人： Satoru Ogasahara , Mitsuaki Harada , Hiroaki Furukawa , Takashi Goto , Tatsuro Gueshi , Yoshiyuki Ishizuka
发明人： Satoru Ogasahara , Mitsuaki Harada , Hiroaki Furukawa , Takashi Goto , Tatsuro Gueshi , Yoshiyuki Ishizuka
IPC分类号： H01L2972
CPC分类号： H01L28/55 , H01L29/78391
摘要： A gate insulating layer and a first lower electrode are formed on a channel region of a silicon substrate, and an interlayer insulating film is formed on the silicon substrate so as to cover the first lower electrode and the gate insulating film. A buffer layer is formed on the interlayer insulating film, and a contact hole is formed in the interlayer insulating film and the buffer layer on the first lower electrode. A connecting layer and a second lower electrode are formed in the contact hole. A ferroelectric thin film and an upper electrode are formed in this order on the buffer layer so as to be brought into contact with the upper surface of the second lower electrode.
摘要翻译：在硅衬底的沟道区上形成栅绝缘层和第一下电极，在硅衬底上形成层间绝缘膜，以覆盖第一下电极和栅极绝缘膜。在层间绝缘膜上形成缓冲层，在层间绝缘膜和第一下电极的缓冲层上形成接触孔。连接层和第二下电极形成在接触孔中。在缓冲层上依次形成铁电薄膜和上电极，以与第二下电极的上表面接触。

4. 发明授权

US5104698A Method for impregnating a fibrous base material with a substantially air-free varnish 失效
标题翻译：一种具有大气无空间变质的纤维基材料的方法
公开(公告)号：US5104698A
公开(公告)日：1992-04-14
申请号：US653902
申请日：1991-02-12
申请人： Shigetoshi Hayashi , Takeyasu Mino , Yasuhiro Yagi , Mitsuaki Harada
发明人： Shigetoshi Hayashi , Takeyasu Mino , Yasuhiro Yagi , Mitsuaki Harada
IPC分类号： B05C3/152 , B05C3/12 , B05C9/10 , B05D1/18 , B05D1/36 , B05D3/10 , B29B15/12 , B29K105/08 , D06M15/07 , D06M15/09 , D06M15/55 , D21H23/42
CPC分类号： D21H23/42 , B05C3/125 , B29B15/125 , D06M15/07 , D06M15/09 , D06M15/55 , B05D3/0486 , B05D3/101 , B05D7/04
摘要： A method and apparatus for impregnating a fibrous base material with a varnish liquid, wherein the so-impregnated base material is substantially air free. A base material is passed under the surface of and through a supply of low-viscosity liquid such as to impregnate the base material with the low-viscosity liquid and displace air from the base material so as to provide a substantially air-free base material. The air-free base material is passed through an entrance for and into a syphon. An inert gas is supplied to the syphon so as to maintain an inert gas atmosphere therein sufficient to maintain the air-free condition of the base material. The air-free base material is then passed through an exit of the syphon and under the surface of and through a supply of varnish liquid sufficiently to displace the low-viscosity liquid from the air-free base material and impregnate the air-free base material with the varnish liquid.

5. 发明授权

US07199049B2 Methods for forming contact hole, for manufacturing circuit board and for manufacturing electro-optical device 失效
标题翻译：用于形成接触孔的方法，用于制造电路板和用于制造电光器件
公开(公告)号：US07199049B2
公开(公告)日：2007-04-03
申请号：US11150290
申请日：2005-06-13
申请人： Mitsuaki Harada , Soichi Moriya
发明人： Mitsuaki Harada , Soichi Moriya
IPC分类号： H01L21/4763
CPC分类号： H01L27/3276 , G02F1/1345 , G02F1/167 , H01L21/76802 , H01L27/283 , H01L27/3274 , H01L51/56 , H01L2924/0002 , H05K1/0289 , H05K3/002 , H05K3/005 , H05K3/4069 , H05K2203/0126 , H05K2203/0221 , H05K2203/0783 , H01L2924/00
摘要： A method for forming a contact hole, a method for manufacturing a circuit board and a method for manufacturing an electro-optical device that increase the reliability of electrical coupling via a conductive part and prevent wire-breaking due to projections when forming a contact hole in an interlayer film by using a needle, and burying a conductive material in the contact hole is provided.
摘要翻译：一种形成接触孔的方法，电路板的制造方法和电光装置的制造方法，其通过导电部分增加电耦合的可靠性，并且防止在形成接触孔时由于突起引起的断线提供通过使用针的中间膜和在接触孔中埋入导电材料。

6. 发明申请

US20060023154A1 Mounting method of flexible printed circuit and manufacturing method of electric optical device 失效
标题翻译：柔性印刷电路的安装方法及电光装置的制造方法
公开(公告)号：US20060023154A1
公开(公告)日：2006-02-02
申请号：US11189048
申请日：2005-07-26
申请人： Mitsuaki Harada , Soichi Moriya , Takeo Kawase , Atsushi Miyazaki
发明人： Mitsuaki Harada , Soichi Moriya , Takeo Kawase , Atsushi Miyazaki
IPC分类号： G02F1/1345
CPC分类号： G02F1/13452 , G02F1/167 , H01L2924/0002 , H05K3/323 , H05K3/361 , H05K2203/1189 , H01L2924/00
摘要： Aspects of the current invention are directed to a method of mounting a flexible printed circuit and a manufacturing method of an electric optical device. Each of the methods form semiconductor elements and first terminal portions for electrically connecting the semiconductor elements and the outside of the board. These terminal portions have are completely or partially covered with an organic film 37 and are pressed into second terminal portion on the flexible printed circuit from the direction above the organic film thereby creating an electrical connection. Optionally, an anisotropic conductive paste or anisotropic conductive film may be provided between the second terminal portion and the organic film.
摘要翻译：本发明的方面涉及一种安装柔性印刷电路的方法和电光学装置的制造方法。每种方法形成半导体元件和用于电连接半导体元件和板的外部的第一端子部分。这些端子部分被完全或部分地覆盖有机膜37，并且从有机膜上方的方向压入柔性印刷电路上的第二端子部分，从而形成电连接。可选地，可以在第二端子部分和有机膜之间设置各向异性导电浆料或各向异性导电膜。

7. 发明申请

US20050181533A1 Method for manufacturing an electro-optical device board, optical device, electro-optical device and electronic equipment 审中-公开
标题翻译：电光装置板，光学装置，电光装置和电子设备的制造方法
公开(公告)号：US20050181533A1
公开(公告)日：2005-08-18
申请号：US11045189
申请日：2005-01-31
申请人： Takeo Kawase , Soichi Moriya , Mitsuaki Harada
发明人： Takeo Kawase , Soichi Moriya , Mitsuaki Harada
IPC分类号： G02F1/167 , G09F9/00 , G09F9/30 , H01L21/00 , H01L21/28 , H01L21/288 , H01L21/3205 , H01L21/336 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/40
CPC分类号： G02F1/167 , G02F1/136286 , H01L27/283
摘要： A method for manufacturing an electro-optical device board including on a substrate a switching element and a coupling wiring coupled to the switching element is provided. The method includes the steps of forming the switching element and first coupling wirings simultaneously by patterning using light irradiation; and forming second coupling wirings by an additive patterning process.
摘要翻译：提供了一种制造电光装置板的方法，该电光装置板包括在基板上，开关元件和耦合到开关元件的耦合布线。该方法包括以下步骤：通过使用光照射进行图案化同时形成开关元件和第一耦合布线; 以及通过添加剂图案化工艺形成第二耦合布线。

8. 发明申请

US20050173701A1 Transistor, circuit board, display and electronic equipment 有权
标题翻译：晶体管，电路板，显示器和电子设备
公开(公告)号：US20050173701A1
公开(公告)日：2005-08-11
申请号：US11049974
申请日：2005-02-04
申请人： Takeo Kawase , Soichi Moriya , Mitsuaki Harada
发明人： Takeo Kawase , Soichi Moriya , Mitsuaki Harada
IPC分类号： H01L21/28 , H01L21/288 , H01L21/336 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/10 , H01L51/30 , H01L51/40 , H01L29/08
CPC分类号： H01L51/0022 , H01L51/0035 , H01L51/0043 , H01L51/0097 , H01L51/052 , H01L51/0541 , H01L51/055 , H01L51/102
摘要： A transistor having at least one of a source electrode and a drain electrode being formed of a porous film is described. The transistor maintains its characteristics even after being subjected to a high temperature and high humidity environment. The transistor may be used in a circuit board, a display and electronic equipment.
摘要翻译：描述了由多孔膜形成的具有源电极和漏电极中的至少一个的晶体管。即使经受高温高湿环境，晶体管也保持其特性。晶体管可以用于电路板，显示器和电子设备中。

9. 发明授权

US06720096B1 Dielectric element 有权
标题翻译：介电元件
公开(公告)号：US06720096B1
公开(公告)日：2004-04-13
申请号：US09711512
申请日：2000-11-14
申请人： Shigeharu Matsushita , Mitsuaki Harada
发明人： Shigeharu Matsushita , Mitsuaki Harada
IPC分类号： B32B900
CPC分类号： H01L28/75 , H01L28/55
摘要： A dielectric element employing an oxide-based dielectric film capable of suppressing oxidation of an electrode or deterioration of film characteristics of the oxide-based dielectric film is obtained. This dielectric element comprises an insulator film including the oxide-based dielectric film and the electrode including a first conductor film containing at least a metal and silicon. The aforementioned metal includes at least one metal selected from a group consisting of Ir, Pt, Ru, Re, Ni, Co and Mo. Thus, the aforementioned first conductor film serves as a barrier film for stopping diffusion of oxygen. In heat treatment for sintering the oxide-based dielectric film, therefore, oxygen is effectively inhibited from diffusing along grain boundaries of the electrode. Consequently, a conductive material located under the electrode can be inhibited from oxidation.
摘要翻译：可以获得使用能够抑制电极氧化的氧化物系电介质膜或氧化物类电介质膜的膜特性劣化的介质元件。该电介质元件包括绝缘膜，该绝缘膜包括基于氧化物的电介质膜，该电极包括至少含有金属和硅的第一导体膜。上述金属包括选自Ir，Pt，Ru，Re，Ni，Co和Mo中的至少一种金属。因此，上述第一导体膜用作阻止氧的扩散的阻挡膜。因此，在用于烧结氧化物类电介质膜的热处理中，有效地抑制氧气沿着电极的晶界扩散。因此，可以抑制位于电极下方的导电材料的氧化。

10. 发明授权

US07999786B2 Electrophoretic display and method of manufacturing the same 有权
标题翻译：电泳显示及其制造方法
公开(公告)号：US07999786B2
公开(公告)日：2011-08-16
申请号：US11030108
申请日：2005-01-07
申请人： Mitsuaki Harada , Takeo Kawase , Soichi Moriya
发明人： Mitsuaki Harada , Takeo Kawase , Soichi Moriya
IPC分类号： G09G3/34
CPC分类号： G09G3/34 , G02F1/167 , G02F2001/1676 , G02F2202/28
摘要： To reduce or prevent metal wirings formed on one substrate and electrodes formed on the other substrate from being shorted. An electrophoretic display in which, a display part including electrophoretic particles electrophoresed by application of an electric field, and an electrophoretic display part including an electrode to apply the electric field to the display part, are bonded to a substrate. The substrate includes a metal wiring including an insulating part disposed at a position that corresponds to at least a part of an edge of the electrode.
摘要翻译：为了减少或防止形成在一个基板上的金属布线和形成在另一个基板上的电极短路。电泳显示器，其中包括通过施加电场电泳的电泳颗粒的显示部分和包括用于将电场施加到显示部分的电极的电泳显示部分结合到基板。基板包括金属布线，其包括设置在与电极的边缘的至少一部分对应的位置处的绝缘部。

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