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1. 发明申请

US20070099431A1 Process for increasing feature density during the manufacture of a semiconductor device 有权
标题翻译：在制造半导体器件期间增加特征密度的方法
公开(公告)号：US20070099431A1
公开(公告)日：2007-05-03
申请号：US11263885
申请日：2005-11-01
申请人： Mingtao Li
发明人： Mingtao Li
IPC分类号： H01L21/302
CPC分类号： H01L21/3086 , H01L21/3081 , H01L21/3088 , Y10S438/947
摘要： A method used during the manufacture of a semiconductor device comprises the formation of a first patterned layer having individual features of a first density. Through the formation and etching of various layers, for example conformal layers and a spun-on layer, a second patterned layer results which comprises individual features of a second density, which is about three times the first density. An in-process semiconductor apparatus formed using the method, and a system comprising the semiconductor apparatus formed according to the method, is also described.
摘要翻译：在制造半导体器件期间使用的方法包括形成具有第一密度的各个特征的第一图案化层。通过形成和蚀刻各种层，例如保形层和旋涂层，形成第二图案层，其包含第二密度的单个特征，其大约是第一密度的三倍。还描述了使用该方法形成的过程中半导体装置，以及包括根据该方法形成的半导体装置的系统。

2. 发明申请

US20130093050A1 Integrated Circuitry, Methods Of Forming Capacitors, And Methods Of Forming Integrated Circuitry Comprising An Array Of Capacitors And Circuitry Peripheral To The Array 有权
标题翻译：集成电路，形成电容器的方法和形成集成电路的方法包括电容器阵列和电路周边阵列
公开(公告)号：US20130093050A1
公开(公告)日：2013-04-18
申请号：US13276125
申请日：2011-10-18
申请人： Brett W. Busch , Mingtao Li , Jennifer Lequn Liu , Kevin R. Shea , Belford T. Coursey , Jonathan T. Doebler
发明人： Brett W. Busch , Mingtao Li , Jennifer Lequn Liu , Kevin R. Shea , Belford T. Coursey , Jonathan T. Doebler
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L28/40 , H01L23/5252 , H01L27/10852 , H01L27/10894 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： A method of forming capacitors includes providing a support material over a substrate. The support material is at least one of semiconductive or conductive. Openings are formed into the support material. The openings include at least one of semiconductive or conductive sidewalls. An insulator is deposited along the semiconductive and/or conductive opening sidewalls. A pair of capacitor electrodes having capacitor dielectric there-between is formed within the respective openings laterally inward of the deposited insulator. One of the pair of capacitor electrodes within the respective openings is laterally adjacent the deposited insulator. Other aspects are disclosed, including integrated circuitry independent of method of manufacture.
摘要翻译：形成电容器的方法包括在衬底上提供支撑材料。支撑材料是半导体或导电中的至少一种。开口形成支撑材料。开口包括半导体或导电侧壁中的至少一个。沿着半导体和/或导电开口侧壁沉积绝缘体。一对电容器电极之间具有电容器电介质形成在相应的开口内横向向内沉积的绝缘体。各个开口内的一对电容器电极之一横向邻近沉积的绝缘体。公开了其它方面，包括独立于制造方法的集成电路。

3. 发明申请

US20050145119A1 Apparatus for fluid pressure imprint lithography 有权
标题翻译：液体压印光刻设备
公开(公告)号：US20050145119A1
公开(公告)日：2005-07-07
申请号：US10926376
申请日：2004-08-25
申请人： Hua Tan , Linshu Kong , Mingtao Li , Stephen Chou
发明人： Hua Tan , Linshu Kong , Mingtao Li , Stephen Chou
IPC分类号： B31F1/07
CPC分类号： G03F7/0002 , B82Y10/00 , Y10S438/945
摘要： Improved apparatus for imprint lithography involves using direct fluid pressure to press a mold into a substrate-supported film. Advantageously the mold and/or substrate are sufficiently flexible to provide wide area contact under the fluid pressure. Fluid pressing can be accomplished by sealing the mold against the film and disposing the resulting assembly in a pressurized chamber. The result of this fluid pressing is enhanced resolution and high uniformity over an enlarged area.
摘要翻译：用于压印光刻的改进的设备涉及使用直接流体压力将模具压入基板支撑的膜中。有利地，模具和/或基底具有足够的柔性以在流体压力下提供广泛的面积接触。流体压制可以通过将模具密封在膜上并将所得的组件设置在加压室中来实现。这种流体压制的结果是在扩大的区域上增强了分辨率和高均匀性。

4. 发明授权

US09076680B2 Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array 有权
标题翻译：集成电路，形成电容器的方法，以及形成集成电路的方法，该集成电路包括阵列阵列的电容器和电路
公开(公告)号：US09076680B2
公开(公告)日：2015-07-07
申请号：US13276125
申请日：2011-10-18
申请人： Brett W. Busch , Mingtao Li , Jennifer Lequn Liu , Kevin R. Shea , Belford T. Coursey , Jonathan T. Doebler
发明人： Brett W. Busch , Mingtao Li , Jennifer Lequn Liu , Kevin R. Shea , Belford T. Coursey , Jonathan T. Doebler
IPC分类号： H01L27/10 , H01L27/108 , H01L49/02
CPC分类号： H01L28/40 , H01L23/5252 , H01L27/10852 , H01L27/10894 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： A method of forming capacitors includes providing a support material over a substrate. The support material is at least one of semiconductive or conductive. Openings are formed into the support material. The openings include at least one of semiconductive or conductive sidewalls. An insulator is deposited along the semiconductive and/or conductive opening sidewalls. A pair of capacitor electrodes having capacitor dielectric there-between is formed within the respective openings laterally inward of the deposited insulator. One of the pair of capacitor electrodes within the respective openings is laterally adjacent the deposited insulator. Other aspects are disclosed, including integrated circuitry independent of method of manufacture.
摘要翻译：形成电容器的方法包括在衬底上提供支撑材料。支撑材料是半导体或导电中的至少一种。开口形成支撑材料。开口包括半导体或导电侧壁中的至少一个。沿着半导体和/或导电开口侧壁沉积绝缘体。一对电容器电极之间具有电容器电介质形成在相应的开口内横向向内沉积的绝缘体。各个开口内的一对电容器电极之一横向邻近沉积的绝缘体。公开了其它方面，包括独立于制造方法的集成电路。

5. 发明授权

US07696101B2 Process for increasing feature density during the manufacture of a semiconductor device 有权
标题翻译：在制造半导体器件期间增加特征密度的方法
公开(公告)号：US07696101B2
公开(公告)日：2010-04-13
申请号：US11263885
申请日：2005-11-01
申请人： Mingtao Li
发明人： Mingtao Li
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/3086 , H01L21/3081 , H01L21/3088 , Y10S438/947
摘要： A method used during the manufacture of a semiconductor device comprises the formation of a first patterned layer having individual features of a first density. Through the formation and etching of various layers, for example conformal layers and a spun-on layer, a second patterned layer results which comprises individual features of a second density, which is about three times the first density. An in-process semiconductor apparatus formed using the method, and a system comprising the semiconductor apparatus formed according to the method, is also described.
摘要翻译：在制造半导体器件期间使用的方法包括形成具有第一密度的各个特征的第一图案化层。通过形成和蚀刻各种层，例如保形层和旋涂层，形成第二图案层，其包含第二密度的单个特征，其大约是第一密度的三倍。还描述了使用该方法形成的过程中半导体装置，以及包括根据该方法形成的半导体装置的系统。

6. 发明授权

US07322287B2 Apparatus for fluid pressure imprint lithography 有权
标题翻译：液体压印光刻设备
公开(公告)号：US07322287B2
公开(公告)日：2008-01-29
申请号：US10926376
申请日：2004-08-25
申请人： Hua Tan , Linshu Kong , Mingtao Li , Stephen Y. Chou
发明人： Hua Tan , Linshu Kong , Mingtao Li , Stephen Y. Chou
IPC分类号： H01L21/302
CPC分类号： G03F7/0002 , B82Y10/00 , Y10S438/945
摘要： Improved apparatus for imprint lithography involves using direct fluid pressure to press a mold into a substrate-supported film. Advantageously the mold and/or substrate are sufficiently flexible to provide wide area contact under the fluid pressure. Fluid pressing can be accomplished by sealing the mold against the film and disposing the resulting assembly in a pressurized chamber. The result of this fluid pressing is enhanced resolution and high uniformity over an enlarged area.
摘要翻译：用于压印光刻的改进的设备涉及使用直接流体压力将模具压入基板支撑的膜中。有利地，模具和/或基底具有足够的柔性以在流体压力下提供广泛的面积接触。流体压制可以通过将模具密封在膜上并将所得的组件设置在加压室中来实现。这种流体压制的结果是在扩大的区域上增强了分辨率和高均匀性。

7. 发明授权

US07935639B2 Process for increasing feature density during the manufacture of a semiconductor device 有权
标题翻译：在制造半导体器件期间增加特征密度的方法
公开(公告)号：US07935639B2
公开(公告)日：2011-05-03
申请号：US12757898
申请日：2010-04-09
申请人： Mingtao Li
发明人： Mingtao Li
IPC分类号： H01L21/461
CPC分类号： H01L21/3086 , H01L21/3081 , H01L21/3088 , Y10S438/947
摘要： Methods used during the manufacture of a semiconductor device, such as one that includes forming a plurality of vertically oriented first support features. Each feature comprises first and second sidewalls and the first support features are formed to have a first pitch. A plurality of first mask spacers are formed, wherein one first mask spacer is formed on each first support feature sidewall, and each first mask spacer comprises an exposed, vertically oriented sidewall. A plurality of vertically oriented second support features are formed, wherein one second support feature is formed on the exposed, vertically oriented sidewall of each first mask spacer, and each second support feature is separated from an adjacent second support feature by a gap. A plurality of second mask features are formed, wherein one second mask feature is formed within each gap. The first and second support features are removed, and the first and second mask spacers are left to provide an etch pattern, wherein the first and second mask features have a second pitch. The first pitch is about three times the second pitch.
摘要翻译：在制造半导体器件期间使用的方法，例如包括形成多个垂直取向的第一支撑特征的方法。每个特征包括第一和第二侧壁，并且第一支撑特征形成为具有第一间距。形成多个第一掩模间隔件，其中在每个第一支撑特征侧壁上形成一个第一掩模间隔件，并且每个第一掩模间隔件包括暴露的垂直取向的侧壁。形成多个垂直定向的第二支撑特征，其中一个第二支撑特征形成在每个第一掩模间隔件的暴露的，垂直取向的侧壁上，并且每个第二支撑特征与相邻的第二支撑特征与间隙分离。形成多个第二掩模特征，其中在每个间隙内形成一个第二掩模特征。去除第一和第二支撑特征，并且留下第一和第二掩模间隔物以提供蚀刻图案，其中第一和第二掩模特征具有第二间距。第一个音高是第二音高的三倍。

8. 发明申请

US20100203740A1 Process for Increasing Feature Density During the Manufacture of a Semiconductor Device 有权
标题翻译：在制造半导体器件期间增加特征密度的方法
公开(公告)号：US20100203740A1
公开(公告)日：2010-08-12
申请号：US12757898
申请日：2010-04-09
申请人： Mingtao Li
发明人： Mingtao Li
IPC分类号： H01L21/306
CPC分类号： H01L21/3086 , H01L21/3081 , H01L21/3088 , Y10S438/947
摘要： Methods used during the manufacture of a semiconductor device, such as one that includes forming a plurality of vertically oriented first support features. Each feature comprises first and second sidewalls and the first support features are formed to have a first pitch. A plurality of first mask spacers are formed, wherein one first mask spacer is formed on each first support feature sidewall, and each first mask spacer comprises an exposed, vertically oriented sidewall. A plurality of vertically oriented second support features are formed, wherein one second support feature is formed on the exposed, vertically oriented sidewall of each first mask spacer, and each second support feature is separated from an adjacent second support feature by a gap. A plurality of second mask features are formed, wherein one second mask feature is formed within each gap. The first and second support features are removed, and the first and second mask spacers are left to provide an etch pattern, wherein the first and second mask features have a second pitch. The first pitch is about three times the second pitch.
摘要翻译：在制造半导体器件期间使用的方法，例如包括形成多个垂直取向的第一支撑特征的方法。每个特征包括第一和第二侧壁，并且第一支撑特征形成为具有第一间距。形成多个第一掩模间隔件，其中在每个第一支撑特征侧壁上形成一个第一掩模间隔件，并且每个第一掩模间隔件包括暴露的垂直取向的侧壁。形成多个垂直定向的第二支撑特征，其中一个第二支撑特征形成在每个第一掩模间隔件的暴露的垂直取向的侧壁上，并且每个第二支撑特征与相邻的第二支撑特征与间隙分离。形成多个第二掩模特征，其中在每个间隙内形成一个第二掩模特征。去除第一和第二支撑特征，并且留下第一和第二掩模间隔物以提供蚀刻图案，其中第一和第二掩模特征具有第二间距。第一个音高是第二音高的三倍。

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