专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070105374A1 Method for making a metal oxide semiconductor device 失效
标题翻译：制造金属氧化物半导体器件的方法
公开(公告)号：US20070105374A1
公开(公告)日：2007-05-10
申请号：US11270931
申请日：2005-11-10
申请人： Ming-Kwei Lee , Jung-Jie Huang , Yu-Hsiang Hung
发明人： Ming-Kwei Lee , Jung-Jie Huang , Yu-Hsiang Hung
IPC分类号： H01L21/44
CPC分类号： H01L21/02186 , H01L21/02271 , H01L21/02337 , H01L21/02362 , H01L21/28185 , H01L21/28194 , H01L21/3003 , H01L21/31604 , H01L21/31608 , H01L29/517
摘要： A method for making a MOS device includes: forming an insulator layer on a semiconductor substrate, the insulator layer including a titanium dioxide film that has a surface with hydroxyl groups formed thereon; and forming an aluminum cap film on the surface of the titanium dioxide film, and conducting annealing operation of the aluminum cap film at an annealing temperature sufficient to permit formation of active hydrogen atoms through reaction of the aluminum cap film and the hydroxyl groups, thereby enabling hydrogen passivation of oxide traps in the titanium dioxide film through diffusion of the active hydrogen atoms into the titanium dioxide film.
摘要翻译：制造MOS器件的方法包括：在半导体衬底上形成绝缘体层，所述绝缘体层包括其上形成有羟基的表面的二氧化钛膜; 并在二氧化钛膜的表面上形成铝盖膜，并且在退火温度下进行铝盖膜的退火操作，该退火温度足以通过铝盖膜和羟基的反应形成活性氢原子，从而使能通过将活性氢原子扩散到二氧化钛膜中，二氧化钛膜中的氧化物阱的氢钝化。

2. 发明授权

US06461952B2 Method for growing barium titanate thin film 有权
标题翻译：生长钛酸钡薄膜的方法
公开(公告)号：US06461952B2
公开(公告)日：2002-10-08
申请号：US09733457
申请日：2000-12-08
申请人： Ming-Kwei Lee , Hsin-Chih Liao
发明人： Ming-Kwei Lee , Hsin-Chih Liao
IPC分类号： H01L213205
CPC分类号： H01L21/02282 , H01L21/02197 , H01L21/31691
摘要： A method for preparing a barium fluorotitanate (BaTiF6) powder and depositing a barium titanate (BaTiO3) thin film on a silicon wafer is disclosed. The method includes steps of a) producing a barium fluorotitanate powder by mixing a hexafluorotitanic acid solution and a barium nitrate solution at a low temperature, b) dissolving the barium fluorotitanate powder into water and mixing with a boric acid solution, and c) immersing a silicon wafer into the mixture at a low temperature to grow a barium titanate thin film on the silicon wafer.
摘要翻译：公开了一种制备氟钛酸钡（BaTiF6）粉末并在硅晶片上沉积钛酸钡（BaTiO 3）薄膜的方法。该方法包括以下步骤：a）通过在低温下混合六氟钛酸溶液和硝酸钡溶液来生产氟钛酸钡粉末，b）将氟钛酸钡粉末溶解在水中并与硼酸溶液混合，以及c）硅晶片在低温下混入混合物中以在硅晶片上生长钛酸钡薄膜。

3. 发明授权

US06455344B1 Method of fabricating a planar porous silicon metal-semicoductor-metal photodetector 有权
标题翻译：制造平面多孔硅金属半导体 - 金属光电探测器的方法
公开(公告)号：US06455344B1
公开(公告)日：2002-09-24
申请号：US09302120
申请日：1999-04-29
申请人： Ming-Kwei Lee
发明人： Ming-Kwei Lee
IPC分类号： H01L2100
CPC分类号： H01L31/1804 , H01L31/1085 , Y02E10/547 , Y02P70/521
摘要： A high gain and low leakage current porous silicon metal-semiconductor-metal planar photodetector was fabricated through rapid thermal oxidation (RTO) and rapid thermal annealing (RTA). A high responsivity of 2.15 A/W can be obtained under a 0.85 mW 675 nm laser diode illumination. The gain is 400%. It shows high potential as a device applied in optoelectronics and optoelectronic integrated circuits.
摘要翻译：通过快速热氧化（RTO）和快速热退火（RTA）制造了高增益和低漏电流多孔硅金属 - 半导体 - 金属平面光电探测器。在0.85 mW 675 nm激光二极管照明下，可以获得2.15 A / W的高响应度。收益是400％。作为在光电子和光电子集成电路中应用的器件具有很高的潜力。

4. 发明授权

US6090726A Pretreatment method of a silicon wafer using nitric acid 失效
标题翻译：使用硝酸的硅片的预处理方法
公开(公告)号：US6090726A
公开(公告)日：2000-07-18
申请号：US93072
申请日：1998-06-08
申请人： Ming-Kwei Lee
发明人： Ming-Kwei Lee
IPC分类号： H01L21/316 , H01L21/02 , B05D3/10
CPC分类号： H01L21/316 , Y10S438/905
摘要： LPD (Liquid Phase Oxide Deposition) technology is a newly developed approach to deposit SiO.sub.2 on silicon wafers. LPD-SO.sub.2 film was deposited by immersing the wafer in hydrofluosilicic acid (H.sub.2 SiF.sub.6) solution supersaturated with silica gel at low temperature (about 40.degree. C.). LPD-SiO.sub.2, also the deformation of wafers is avoided so the method can be applied to the fabrication of integrated circuits. Moreover, this method has high potential to replace the CVD-SiO.sub.2. However, it is very hard to deposit LPD-SiO.sub.2 on very clean silicon wafer (e.g., without any oxide) because of no nucleation seed. In this study, the LPD-SiO.sub.2 was deposited on silicon wafer with a plasma-enhanced chemical vapor deposition oxide, a thermal oxide, an atmospheric pressure chemical vapor deposition oxide, and a nitric acid pretreatment oxide. The nitric acid pretreatment enhances the LPD-SiO.sub.2 growth rate and reduce the stress in the LPD-SiO.sub.2 film. In addition, it has a smaller dielectric constant and it can reduce the parasitic capacitance in integrated circuits.
摘要翻译： LPD（液相氧化物沉积）技术是一种新开发的在硅晶片上沉积SiO 2的方法。将晶片浸入硅胶在低温（约40℃）过饱和的氢氟硅酸（H2SiF6）溶液中沉积LPD-SO2膜。 LPD-SiO2，也避免了晶片的变形，因此该方法可以应用于集成电路的制造。此外，该方法具有取代CVD-SiO 2的高潜力。然而，由于没有成核种子，很难将LPD-SiO 2沉积在非常干净的硅晶片上（例如，没有任何氧化物）。在这项研究中，LPD-SiO2用等离子体增强化学气相沉积氧化物，热氧化物，大气压化学气相沉积氧化物和硝酸预处理氧化物沉积在硅晶片上。硝酸预处理提高了LPD-SiO2的生长速率，降低了LPD-SiO2膜的应力。此外，它具有较小的介电常数，并且可以降低集成电路中的寄生电容。

5. 发明授权

US5705047A Method for manufacturing porous blue light emitting diode 失效
标题翻译：多孔蓝色发光二极管的制造方法
公开(公告)号：US5705047A
公开(公告)日：1998-01-06
申请号：US631271
申请日：1996-04-12
申请人： Ming-Kwei Lee
发明人： Ming-Kwei Lee
IPC分类号： H01L33/34 , H01L33/00 , C25D11/02
CPC分类号： H01L33/346 , Y10S438/96
摘要： A method for manufacturing a porous blue light emitting diode comprising the steps of preparing a silicon substrate having a back surface, applying a conducting layer on the back surface, annealing the substrate coated with the conducting layer in an inert gas atmosphere, applying an anti-corrosion layer on the conducting layer, immersing the anti-corrosion layer-applied substrate in a hydrofluoric acid aqueous solution with a concentration of about 5% by volume, applying a voltage to the resulting layers for eroding the anti-corrosion layer-applied substrate to form a porous layer having Si wires on a top surface of the substrate, and oxidizing the porous layer for making sizes of the Si wires small enough for emitting light having a peak occuring at a wavelength shorter than about 520 nm. This method offers a simple and feasible way to fabricate a porous blue light emitting diode.
摘要翻译：一种制造多孔蓝色发光二极管的方法，包括以下步骤：制备具有背面的硅衬底，在背面上施加导电层，在惰性气体气氛中退火涂覆有导电层的衬底，将导电层上的腐蚀层浸渍在具有约5体积％的浓度的氢氟酸水溶液中，将所施加的防腐蚀层的基板浸渍在所得到的层中，以将防腐蚀层施加的基板侵蚀到在衬底的顶表面上形成具有Si线的多孔层，并且氧化多孔层以使Si线的尺寸足够小以发射出现在波长短于约520nm的峰的光。该方法提供了制造多孔蓝色发光二极管的简单且可行的方法。

6. 发明授权

US5665423A Method for manufacturing a photodetector for sensing light having a wavelength within a wide range 失效
标题翻译：一种光检测器的制造方法，用于感测波长在宽范围内的光
公开(公告)号：US5665423A
公开(公告)日：1997-09-09
申请号：US386960
申请日：1995-02-10
申请人： Ming-Kwei Lee
发明人： Ming-Kwei Lee
IPC分类号： H01L31/028 , B05D5/12 , H01L31/18
CPC分类号： H01L31/028 , Y02E10/547 , Y10S438/96
摘要： The present invention is related to a method for manufacturing a photodetector which comprises the steps of: (a) preparing a substrate having a back surface; (b) applying a first conducting layer on the back surface; (c) annealing the substrate coated with the first conducting layer in an inert gas atmosphere; (d) applying a anti-corrosion layer on the first conducting layer; (e) immersing the anti-corrosion layer-applied substrate in a hydrofluoric acid aqueous solution with a concentration of 5%.about.10%; (f) eroding the anti-corrosion layer-applied substrate under a current density of about 12.5.about.25 mA/cm.sup.2 for about 5.about.40 minutes to obtain a porous layer therereon; and (g) applying a thin film layer of a second conducting layer to an upper surface of the porous layer to obtain the photodetector. The present photodetector has a wider frequency band and a higher sensitivity than conventional ones and the present manufacturing method is simple and economical.
摘要翻译：本发明涉及一种用于制造光电探测器的方法，该方法包括以下步骤：（a）制备具有背面的衬底; （b）在所述背面施加第一导电层; （c）在惰性气体气氛中退火涂有第一导电层的基材; （d）在第一导电层上施加防腐蚀层; （e）将防腐蚀层施加的基材浸渍在浓度为5％的浓度的10％的氢氟酸水溶液中; （f）在约25分钟/分钟的电流密度下，在约25℃/分钟的电流密度下腐蚀所述防腐蚀层的衬底，约40分钟，以获得多孔层; 和（g）将第二导电层的薄膜层施加到多孔层的上表面以获得光电检测器。本发明的光电检测器具有比常规的更宽的频带和更高的灵敏度，并且本发明的制造方法简单且经济。

7. 发明授权

US07771688B2 Method for preparing titanium dioxide particles co-doped with nitrogen and fluorine 失效
标题翻译：制备与氮和氟共掺杂的二氧化钛颗粒的方法
公开(公告)号：US07771688B2
公开(公告)日：2010-08-10
申请号：US11858101
申请日：2007-09-19
申请人： Ming-Kwei Lee , Tsung-Hsiang Shih
发明人： Ming-Kwei Lee , Tsung-Hsiang Shih
IPC分类号： C01B21/00
CPC分类号： C01G23/047 , C01P2002/52 , C01P2002/72 , C01P2004/03 , C01P2006/80
摘要： A method for preparing titanium dioxide particles co-doped with nitrogen and fluorine includes the steps of: mixing boric acid with ammonium fluorotitanate in an aqueous medium to form ammonium oxotrifluorotitanate; liquid-phase depositing the ammonium oxotrifluorotitanate on a silicon-containing substrate; and thermo-treating the ammonium oxotrifluorotitanate on the silicon-containing substrate at a temperature ranging from 300 to 1000° C.
摘要翻译：一种制备与氮和氟共掺杂的二氧化钛颗粒的方法包括以下步骤：将硼酸与氟钛酸铵混合在水性介质中以形成三氟化钛酸铵; 在含硅基材上液相沉积氧化三氟硼酸铵; 并在300〜1000℃的温度范围内，在含硅基板上热处理氧化三氟硼酸铵。

8. 发明申请

US20070099003A1 Titanate-containing material and method for making the same 审中-公开
标题翻译：含钛酸盐的材料及其制造方法
公开(公告)号：US20070099003A1
公开(公告)日：2007-05-03
申请号：US11389599
申请日：2006-03-24
申请人： Ming-Kwei Lee , Chung-Min Shih , Tsung-Hsiang Shih
发明人： Ming-Kwei Lee , Chung-Min Shih , Tsung-Hsiang Shih
IPC分类号： B05D1/40 , B05D3/02 , B05D1/18 , B32B13/04 , B32B19/00
CPC分类号： B01J35/004 , B01J37/0215 , B01J37/031 , C03C17/256 , C03C2217/212 , C03C2218/113
摘要： A titanate-containing material includes: a silicon-containing layer; and a crystalline layer of ammonium oxotrifluorotitanate formed on the silicon-containing layer. A method for making a titanate-containing material includes: immersing a silicon-containing substrate into an aqueous solution containing hexafluorotitanate radicals; and reacting the hexafluorotitanate radicals with water so as to form a crystalline layer of an oxotrifluorotitanate compound on the silicon-containing substrate.
摘要翻译：含钛酸盐的材料包括：含硅层; 以及形成在含硅层上的氧化三氟钛酸铵的结晶层。制备含钛酸盐材料的方法包括：将含硅基材浸入含有六氟钛酸酯基团的水溶液中; 并使六氟钛酸酯基团与水反应，以在含硅衬底上形成氧三氟钛酸盐化合物的结晶层。

9. 发明授权

US6103546A Method to improve the short circuit current of the porous silicon photodetector 失效
标题翻译：改善多孔硅光电探测器短路电流的方法
公开(公告)号：US6103546A
公开(公告)日：2000-08-15
申请号：US41679
申请日：1998-03-13
申请人： Ming-Kwei Lee
发明人： Ming-Kwei Lee
IPC分类号： H01L31/028 , H01L31/18
CPC分类号： H01L31/1864 , H01L31/0284 , Y02E10/50 , Y02P70/521
摘要： The rapid thermal oxidation (RTO) and rapid thermal annealing(RTA) were used to improve the photo-current and photoresponsivity of porous silicon photodetector. In addition, we remove the surface oxide of the porous silicon under the metal grid using the same mask, and enhance the photo-current of porous silicon photodetector at zero bias voltage. This invention removes the limitation of application of the porous silicon photodetector.
摘要翻译：使用快速热氧化（RTO）和快速热退火（RTA）来改善多孔硅光电探测器的光电流和光响应性。此外，我们使用相同的掩模去除金属网格下的多孔硅的表面氧化物，并且在零偏压下增强多孔硅光电探测器的光电流。本发明消除了多孔硅光电探测器的应用限制。

10. 发明授权

US5776793A Method of fabricating opto-electronic device 失效
标题翻译：制造光电器件的方法
公开(公告)号：US5776793A
公开(公告)日：1998-07-07
申请号：US672107
申请日：1996-06-27
申请人： Ming-Kwei Lee , Min-Yen Yeh
发明人： Ming-Kwei Lee , Min-Yen Yeh
IPC分类号： H01L33/00 , H01L33/28 , H01S5/327 , H01L21/00
CPC分类号： H01L33/285 , H01L33/0087 , H01S2304/04 , H01S5/327
摘要： A method of fabricating opto-electronic device includes steps of introducing a first reacting gas flow, a second reacting gas flow and (a) dopant(s) into a reactor to form epilayer(s) on a substrate wherein the ratio of the first reacting gas and the second reacting gas is different in each reacting stages. By providing suitable epilayer growth conditions which need neither expensive equipment nor highly technical steps, high quality doped ZnSe can be obtained and fabricating pure blue light light-emitting diode becomes possible.
摘要翻译：一种制造光电器件的方法包括将第一反应气流，第二反应气流和（a）掺杂剂引入反应器以在衬底上形成外延层的步骤，其中第一反应气流气体和第二反应气体在每个反应阶段是不同的。通过提供合适的外延生长条件，既不需要昂贵的设备也不需要高技术性的步骤，可以获得高质量的掺杂ZnSe，并且可以制造纯蓝光发光二极管。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式