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    • 1. 发明授权
    • Reticle-focus detector, and charged-particle-beam microlithography apparatus and methods comprising same
    • 光栅聚焦检测器和带电粒子束微光刻设备及其方法
    • US06768124B2
    • 2004-07-27
    • US09828300
    • 2001-04-06
    • Kazuaki SuzukiMikio Ushijima
    • Kazuaki SuzukiMikio Ushijima
    • G03F900
    • G03F7/70775B82Y10/00B82Y40/00G03F9/7026H01J37/304H01J37/3174H01J2237/31794
    • Due to its lack of appreciable thickness, the reticle used in charged-particle-beam (CPB) microlithography is prone to bending and flexing, causing instability in reticle axial height position relative to the projection-lens system, with consequent errors in image focus, rotation and magnification. Apparatus and methods are disclosed for monitoring changes in axial height position of the reticle, to facilitate making compensatory changes. Representative apparatus include a device for detecting the axial height position of the reticle. The device produces one or more beams of light (IR to visible) to strike the reticle at an oblique angle of incidence, detects light reflected from the reticle surface, and detects lateral shifts of the reflected light as received by a height detector. Hence, reticle focus is detected easily and in real time. Multiple detection beams can be used, thereby allowing detection of both axial height position and inclination of the reticle with high accuracy. Reticle-position data can be used to regulate one or more parameters of exposure and/or axial position of the reticle or wafer.
    • 由于其缺乏可观的厚度,用于带电粒子束(CPB)微光刻的掩模版易于弯曲和弯曲,导致相对于投影透镜系统的标线轴高度位置不稳定,导致图像聚焦的误差, 旋转和放大。 公开了用于监测标线的轴向高度位置变化的装置和方法,以便于进行补偿性变化。 代表性装置包括用于检测掩模版的轴向高度位置的装置。 该装置产生一个或多个光束(IR到可见)以倾斜的入射角撞击光罩,检测从标线片表面反射的光,并且检测由高度检测器接收的反射光的横向偏移。 因此,准确地检测到掩模版焦点。 可以使用多个检测光束,从而能够高精度地检测光罩的轴向高度位置和倾斜度。 标线片位置数据可用于调节掩模版或晶片的曝光和/或轴向位置的一个或多个参数。