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1. 发明申请

US20130288573A1 Polishing Composition and Polishing Method Using The Same 审中-公开
公开(公告)号：US20130288573A1
公开(公告)日：2013-10-31
申请号：US13923477
申请日：2013-06-21
申请人： Mikikazu SHIMIZU , Tomohiko AKATSUKA , Kazuya SUMITA
发明人： Mikikazu SHIMIZU , Tomohiko AKATSUKA , Kazuya SUMITA
IPC分类号： B24B37/04
CPC分类号： B24B37/044 , C09G1/02 , H01L21/3212
摘要： The present invention provides a polishing composition that can be suitably used in polishing of polysilicon, and a polishing method using the polishing composition. The polishing composition contains a nitrogen-containing nonionic surfactant and abrasive grains and has a pH of 9 to 12. The content of the nitrogen-containing nonionic surfactant in the polishing composition is preferably 20 to 500 ppm. The abrasive grains contained in the polishing composition are preferably colloidal silica. The average primary particle diameter of the abrasive grains contained in the polishing composition is preferably 10 to 90 nm. The content of the abrasive grains in the polishing composition is preferably 1.0 to 5.0% by mass.

2. 发明申请

US20090197413A1 Polishing Composition and Polishing Method Using The Same 有权
标题翻译：抛光组合和抛光方法使用它
公开(公告)号：US20090197413A1
公开(公告)日：2009-08-06
申请号：US12362991
申请日：2009-01-30
申请人： Mikikazu SHIMIZU , Tomohiko AKATSUKA , Kazuya SUMITA
发明人： Mikikazu SHIMIZU , Tomohiko AKATSUKA , Kazuya SUMITA
IPC分类号： C09G1/14 , C09G1/02 , H01L21/304
CPC分类号： H01L21/3212 , C09G1/02
摘要： The present invention provides a polishing composition that can be suitably used in polishing of polysilicon, and a polishing method using the polishing composition. The polishing composition contains abrasive grains and an anionic surfactant having a monooxyethylene group or a polyoxyethylene group and has a pH of 9 to 12. If the anionic surfactant contained in the polishing composition has a polyoxyethylene group, the number of repeating oxyethylene units in the polyoxyethylene group is preferably 2 to 8. The anionic surfactant contained in the polishing composition can be an anionic surfactant that has a phosphate group, a carboxy group, or a sulfo group as well as a monooxyethylene group or a polyoxyethylene group. The content of the anionic surfactant in the polishing composition is preferably 20 to 500 ppm.
摘要翻译：本发明提供了可以适用于多晶硅研磨的抛光组合物和使用该抛光组合物的研磨方法。抛光组合物含有磨粒和具有单氧乙烯基或聚氧乙烯基的阴离子表面活性剂，其pH为9〜12。如果研磨用组合物中含有的阴离子表面活性剂具有聚氧乙烯基，则聚氧乙烯基团优选为2〜8。抛光组合物中所含的阴离子表面活性剂可以是具有磷酸基，羧基或磺基以及单氧乙烯基或聚氧乙烯基的阴离子表面活性剂。抛光组合物中阴离子表面活性剂的含量优选为20〜500ppm。

3. 发明申请

US20080125017A1 POLISHING COMPOSITION AND POLISHING METHOD 审中-公开
标题翻译：抛光组合物和抛光方法
公开(公告)号：US20080125017A1
公开(公告)日：2008-05-29
申请号：US11943159
申请日：2007-11-20
申请人： Mikikazu Shimizu , Takehiko Nakajima , Takashi Ito , Ai Hiramitsu
发明人： Mikikazu Shimizu , Takehiko Nakajima , Takashi Ito , Ai Hiramitsu
IPC分类号： B24B1/00 , C09K3/14
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053
摘要： To provide a polishing composition which is capable of selectively polishing a silicon oxide film against a polysilicon film, and a polishing method employing such a polishing composition.The polishing composition of the present invention comprises abrasive grains selected from silica and ceria; an alkali selected from ammonia, an ammonium salt, an alkali metal salt and an alkali metal hydroxide; and an organic modified silicone oil selected from a polyoxyethylene-modified silicone oil, a poly(oxyethyleneoxypropylene)-modified silicone oil, an epoxy/polyether-modified silicone oil and an amino/polyether-modified silicone oil.
摘要翻译：提供能够选择性地对多晶硅膜抛光氧化硅膜的抛光组合物和使用这种抛光组合物的抛光方法。本发明的抛光组合物包含选自二氧化硅和二氧化铈的磨料颗粒; 选自氨，铵盐，碱金属盐和碱金属氢氧化物的碱; 和选自聚氧乙烯改性硅油，聚（氧乙烯氧丙烯）改性硅油，环氧/聚醚改性硅油和氨基/聚醚改性硅油的有机改性硅油。

4. 发明申请

US20070202703A1 Polishing composition and polishing method 审中-公开
标题翻译：抛光组合物和抛光方法
公开(公告)号：US20070202703A1
公开(公告)日：2007-08-30
申请号：US11711234
申请日：2007-02-27
申请人： Mikikazu Shimizu , Takehiko Nakajima
发明人： Mikikazu Shimizu , Takehiko Nakajima
IPC分类号： H01L21/461 , B24D3/02 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1445 , C09K3/1463 , H01L21/3212
摘要： A polishing composition contains silica abrasive grains and an iodine compound. The silica abrasive grains exhibit a negative zeta potential in the polishing composition. The silica abrasive grains have an average primary particle size of 30 nm or smaller, and the polishing composition has a pH of 4 or lower. The polishing composition is suitable for polishing a polysilicon film and a silicon nitride film.
摘要翻译：抛光组合物含有二氧化硅磨粒和碘化合物。二氧化硅磨粒在抛光组合物中表现出负ζ电位。二氧化硅磨粒的平均一次粒径为30nm以下，抛光组合物的pH为4以下。抛光组合物适用于抛光多晶硅膜和氮化硅膜。

5. 发明授权

US08518297B2 Polishing composition and polishing method using the same 有权
标题翻译：抛光组合物和抛光方法使用相同
公开(公告)号：US08518297B2
公开(公告)日：2013-08-27
申请号：US12362991
申请日：2009-01-30
申请人： Mikikazu Shimizu , Tomohiko Akatsuka , Kazuya Sumita
发明人： Mikikazu Shimizu , Tomohiko Akatsuka , Kazuya Sumita
IPC分类号： C09K13/06
CPC分类号： H01L21/3212 , C09G1/02
摘要： The present invention provides a polishing composition that can be suitably used in polishing of polysilicon, and a polishing method using the polishing composition. The polishing composition contains abrasive grains and an anionic surfactant having a monooxyethylene group or a polyoxyethylene group and has a pH of 9 to 12. If the anionic surfactant contained in the polishing composition has a polyoxyethylene group, the number of repeating oxyethylene units in the polyoxyethylene group is preferably 2 to 8. The anionic surfactant contained in the polishing composition can be an anionic surfactant that has a phosphate group, a carboxy group, or a sulfo group as well as a monooxyethylene group or a polyoxyethylene group. The content of the anionic surfactant in the polishing composition is preferably 20 to 500 ppm.
摘要翻译：本发明提供了可以适用于多晶硅研磨的抛光组合物和使用该抛光组合物的研磨方法。抛光组合物含有磨粒和具有单氧乙烯基或聚氧乙烯基的阴离子表面活性剂，其pH为9〜12。如果研磨用组合物中含有的阴离子表面活性剂具有聚氧乙烯基，则聚氧乙烯基团优选为2〜8。抛光组合物中所含的阴离子表面活性剂可以是具有磷酸基，羧基或磺基以及单氧乙烯基或聚氧乙烯基的阴离子表面活性剂。抛光组合物中阴离子表面活性剂的含量优选为20〜500ppm。

6. 发明申请

US20090197414A1 Polishing Composition and Polishing Method Using The Same 审中-公开
标题翻译：抛光组合和抛光方法使用它
公开(公告)号：US20090197414A1
公开(公告)日：2009-08-06
申请号：US12363004
申请日：2009-01-30
申请人： Mikikazu Shimizu , Tomohiko Akatsuka , Kazuya Sumita
发明人： Mikikazu Shimizu , Tomohiko Akatsuka , Kazuya Sumita
IPC分类号： H01L21/304 , C09G1/02
CPC分类号： B24B37/044 , C09G1/02 , H01L21/3212
摘要： The present invention provides a polishing composition that can be suitably used in polishing of polysilicon, and a polishing method using the polishing composition. The polishing composition contains a nitrogen-containing nonionic surfactant and abrasive grains and has a pH of 9 to 12. The content of the nitrogen-containing nonionic surfactant in the polishing composition is preferably 20 to 500 ppm. The abrasive grains contained in the polishing composition are preferably colloidal silica. The average primary particle diameter of the abrasive grains contained in the polishing composition is preferably 10 to 90 nm. The content of the abrasive grains in the polishing composition is preferably 1.0 to 5.0% by mass.
摘要翻译：本发明提供了可以适用于多晶硅研磨的抛光组合物和使用该抛光组合物的研磨方法。抛光组合物含有含氮非离子表面活性剂和磨粒，pH为9〜12。抛光组合物中含氮非离子表面活性剂的含量优选为20〜500ppm。抛光组合物中所含的磨粒优选为胶体二氧化硅。研磨用组合物中所含的磨粒的平均一次粒径优选为10〜90nm。研磨用组合物中的磨粒的含量优选为1.0〜5.0质量％。

7. 发明申请

US20070077764A1 Polishing method, polishing composition and polishing composition kit 审中-公开
标题翻译：抛光方法，抛光组合物和抛光组合试剂盒
公开(公告)号：US20070077764A1
公开(公告)日：2007-04-05
申请号：US11540410
申请日：2006-09-29
申请人： Mikikazu Shimizu
发明人： Mikikazu Shimizu
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/3212 , C09G1/02
摘要： A polishing method for polishing a polysilicon film provided on a silicon substrate having an isolation region is provided. The method includes preliminarily polishing the polysilicon film using a preliminary polishing composition containing abrasive grains, an alkali, a water-soluble polymer, and water till a part of the top surface of the isolation region is exposed; and finally polishing the preliminarily polished polysilicon film using a final polishing composition containing abrasive grains, an alkali, a water-soluble polymer, and water till the whole top surface of the isolation region is exposed. The content of the water-soluble polymer in the preliminary polishing composition is 0.0075-0.05% by mass, and the content of the water-soluble polymer in the final polishing composition is 0.002-0.01% by mass.
摘要翻译：提供了一种用于抛光设置在具有隔离区域的硅衬底上的多晶硅膜的抛光方法。该方法包括使用包含磨粒，碱，水溶性聚合物和水的预抛光组合物预先研磨多晶硅膜，直到暴露出隔离区的顶表面的一部分; 最后使用含有磨粒，碱，水溶性聚合物和水的最终抛光组合物抛光预先抛光的多晶硅膜，直到暴露出隔离区的整个顶表面。预备研磨用组合物中的水溶性聚合物的含量为0.0075〜0.05质量％，最终研磨用组合物中的水溶性聚合物的含量为0.002〜0.01质量％。

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