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1. 发明授权

US08709907B2 Method for manufacturing and reoxidizing a TiN/Ta2O5/TiN capacitor 有权
标题翻译：制造和再氧化TiN / Ta2O5 / TiN电容器的方法
公开(公告)号：US08709907B2
公开(公告)日：2014-04-29
申请号：US13364823
申请日：2012-02-02
申请人： Mickael Gros-Jean
发明人： Mickael Gros-Jean
IPC分类号： H01L21/20 , H01L21/02
CPC分类号： H01L21/02274 , C23C16/405 , C23C16/45542 , H01L21/02183 , H01L21/0228 , H01L21/0234 , H01L21/3105 , H01L28/40
摘要： A method for manufacturing a TiN/Ta2O5/TiN capacitor, including the steps of forming a Ta2O5 layer on a TiN support by a plasma-enhanced atomic layer deposition method, or PEALD; and submitting the obtained structure to an N2O plasma for a duration sufficient to oxidize the Ta2O5 layer without oxidizing the TiN support.
摘要翻译：一种制造TiN / Ta 2 O 5 / TiN电容器的方法，包括以下步骤：通过等离子体增强原子层沉积方法在TiN载体上形成Ta 2 O 5层;或PEALD; 并将获得的结构提供到N 2 O等离子体持续足以氧化Ta 2 O 5层的持续时间，而不氧化TiN载体。

2. 发明授权

US08667654B2 Method for manufacturing a polycrystalline dielectric layer 有权
标题翻译：多晶电介质层的制造方法
公开(公告)号：US08667654B2
公开(公告)日：2014-03-11
申请号：US13338766
申请日：2011-12-28
申请人： Mickael Gros-Jean
发明人： Mickael Gros-Jean
IPC分类号： H01G7/00
CPC分类号： H01L28/40 , C23C16/405 , C23C16/45529 , C23C16/45542 , H01G4/085 , H01G4/1209 , H01G4/33 , H01L21/02189 , H01L21/02274 , H01L21/0228 , Y10T29/42 , Y10T29/43 , Y10T29/435
摘要： A method manufactures a capacitor having polycrystalline dielectric layer between two metallic electrodes. The dielectric layer is formed by a polycrystalline growth of a dielectric metallic oxide on one of the metallic electrodes. At least one polycrystalline growth condition of the dielectric oxide is modified during the formation of the polycrystalline dielectric layer, which results in a variation of the polycrystalline properties of the dielectric oxide within the thickness of said layer.
摘要翻译：一种制造在两个金属电极之间具有多晶介质层的电容器。电介质层由金属电极之一上的介电金属氧化物的多晶生长形成。在形成多晶电介质层期间，电介质氧化物的至少一个多晶生长条件被改变，这导致电介质氧化物在所述层的厚度内的多晶性质的变化。

3. 发明申请

US20120200984A1 METHOD FOR MANUFACTURING A TIN/TA2O5/TIN CAPACITOR 审中-公开
标题翻译：制造TIN / TA2O5 / TIN电容器的方法
公开(公告)号：US20120200984A1
公开(公告)日：2012-08-09
申请号：US13359831
申请日：2012-01-27
申请人： Mickael GROS-JEAN
发明人： Mickael GROS-JEAN
IPC分类号： H01G4/06 , H01G7/00
CPC分类号： H01L21/02274 , C23C16/405 , C23C16/45536 , C23C16/45542 , H01L21/02183 , H01L21/0228 , H01L28/40 , Y10T29/43
摘要： A method for manufacturing a TiN/Ta2O5/TiN capacitor, including the steps of depositing, on a TiN layer, a Ta2O5 layer by a plasma enhanced atomic deposition method (PEALD), within a temperature range from 200 to 250° C., by repeating the successive steps of:depositing a tantalum layer from a precursor at a partial pressure ranging between 0.05 and 10 Pa; andapplying an oxygen plasma at an oxygen pressure ranging between 1 and 2000 Pa.
摘要翻译：一种制造TiN / Ta 2 O 5 / TiN电容器的方法，包括以下步骤：在200〜250℃的温度范围内，通过等离子体增强原子沉积法（PEALD）在TiN层上沉积Ta 2 O 5层，由重复以下连续步骤：在0.05至10Pa的分压下从前体沉积钽层; 以及在1至2000Pa之间的氧气压力下施加氧等离子体。

4. 发明申请

US20120199947A1 METHOD FOR MANUFACTURING AND REOXIDIZING A TIN/TA2O5/TIN CAPACITOR 有权
标题翻译：用于制造和再氧化TIN / TA2O5 / TIN电容器的方法
公开(公告)号：US20120199947A1
公开(公告)日：2012-08-09
申请号：US13364823
申请日：2012-02-02
申请人： Mickael Gros-Jean
发明人： Mickael Gros-Jean
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L21/02274 , C23C16/405 , C23C16/45542 , H01L21/02183 , H01L21/0228 , H01L21/0234 , H01L21/3105 , H01L28/40
摘要： A method for manufacturing a TiN/Ta2O5/TiN capacitor, including the steps of forming a Ta2O5 layer on a TiN support by a plasma-enhanced atomic layer deposition method, or PEALD; and submitting the obtained structure to an N2O plasma for a duration sufficient to oxidize the Ta2O5 layer without oxidizing the TiN support.
摘要翻译：一种制造TiN / Ta 2 O 5 / TiN电容器的方法，包括以下步骤：通过等离子体增强原子层沉积方法在TiN载体上形成Ta 2 O 5层;或PEALD; 并将获得的结构提供到N 2 O等离子体持续足以氧化Ta 2 O 5层的持续时间，而不氧化TiN载体。

5. 发明申请

US20120170170A1 METHOD FOR MANUFACTURING A POLYCRYSTALLINE DIELECTRIC LAYER 有权
标题翻译：制造多晶介质层的方法
公开(公告)号：US20120170170A1
公开(公告)日：2012-07-05
申请号：US13338766
申请日：2011-12-28
申请人： Mickael Gros-Jean
发明人： Mickael Gros-Jean
IPC分类号： H01G4/20 , C23C16/50 , B05D5/12
CPC分类号： H01L28/40 , C23C16/405 , C23C16/45529 , C23C16/45542 , H01G4/085 , H01G4/1209 , H01G4/33 , H01L21/02189 , H01L21/02274 , H01L21/0228 , Y10T29/42 , Y10T29/43 , Y10T29/435
摘要： A method manufactures a capacitor having polycrystalline dielectric layer between two metallic electrodes. The dielectric layer is formed by a polycrystalline growth of a dielectric metallic oxide on one of the metallic electrodes. At least one polycrystalline growth condition of the dielectric oxide is modified during the formation of the polycrystalline dielectric layer, which results in a variation of the polycrystalline properties of the dielectric oxide within the thickness of said layer.
摘要翻译：一种制造在两个金属电极之间具有多晶介质层的电容器。电介质层由金属电极之一上的介电金属氧化物的多晶生长形成。在形成多晶电介质层期间，电介质氧化物的至少一个多晶生长条件被改变，这导致电介质氧化物在所述层的厚度内的多晶性质的变化。

6. 发明申请

US20080023436A1 DEPOSITION BY ADSORPTION UNDER AN ELECTRICAL FIELD 审中-公开
标题翻译：通过电场吸收沉积
公开(公告)号：US20080023436A1
公开(公告)日：2008-01-31
申请号：US11782796
申请日：2007-07-25
申请人： Mickael Gros-Jean , Philippe Bouvet
发明人： Mickael Gros-Jean , Philippe Bouvet
IPC分类号： H01G4/002 , C23C8/06
CPC分类号： C23C16/45542 , C23C16/405 , C23C16/45525 , C23C16/45536
摘要： A method for depositing a material by adsorption onto a substrate, includes a step of exposing the substrate to a precursor molecule in the gaseous phase. These precursor molecules present a non-zero dipole moment. An electrical field is applied during the substrate exposing step to cause a reactive branch of the precursor molecules to adsorb into the surface of the substrate in a manner such that the precursor molecules have essentially a same orientation. Next, the substrate is exposed to reagent molecules in the gaseous phase which react with the adsorbed precursor molecules so that organic branches of the adsorbed precursor molecules other than the reactive organic branch are replaced by elements of the reagent molecules. This process results in the formation of a monoatomic layer.
摘要翻译：用于通过吸附沉积到衬底上的材料的方法包括将衬底暴露于气相中的前体分子的步骤。这些前体分子呈现非零偶极矩。在衬底暴露步骤期间施加电场以使前体分子的反应性分支以使得前体分子具有基本上相同的取向的方式吸附到衬底的表面中。接下来，将基板暴露于与吸附的前体分子反应的气相中的试剂分子，使除了反应性有机分支以外的吸附前体分子的有机分支被试剂分子的元素代替。该过程导致单原子层的形成。

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