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1. 发明申请

US20070267760A1 Semiconductor apparatus 有权
标题翻译：半导体装置
公开(公告)号：US20070267760A1
公开(公告)日：2007-11-22
申请号：US11798736
申请日：2007-05-16
申请人： Nobuyuki Katsuki , Hirofumi Nikaido , Michihiro Kobayashi , Yasuhiro Kawakatsu
发明人： Nobuyuki Katsuki , Hirofumi Nikaido , Michihiro Kobayashi , Yasuhiro Kawakatsu
IPC分类号： G11C19/08
CPC分类号： G11C11/412 , H01L27/1104
摘要： A semiconductor apparatus includes an internal layer where a first power supply line to provide a first power supply to transistors in a layout cell and an internal cell line to connect transistors in the layout cell are placed, an input/output line connected with an input/output terminal of the layout cell is placed, and a shield line which is placed between the internal layer and the input/output line so as to cover the internal layer and the first power supply line.
摘要翻译：一种半导体装置，包括内部层，其中设置有用于向布局单元中的晶体管提供第一电源的第一电源线和用于连接布局单元中的晶体管的内部单元线路，与输入/ 放置布局单元的输出端子，以及屏蔽线，其被布置在内层和输入/输出线之间以覆盖内层和第一电源线。

2. 发明授权

US5145869A Phenylsulfonylalkanoic acid compounds and pharmaceuticals thereof 失效
标题翻译：苯磺酰链烷酸化合物及其药物
公开(公告)号：US5145869A
公开(公告)日：1992-09-08
申请号：US683247
申请日：1991-04-11
申请人： Makio Kitazawa , Masuo Akahane , Yasushi Nakano , Atsushi Tsubaki , Kazuaki Sato , Masaaki Ban , Michihiro Kobayashi
发明人： Makio Kitazawa , Masuo Akahane , Yasushi Nakano , Atsushi Tsubaki , Kazuaki Sato , Masaaki Ban , Michihiro Kobayashi
IPC分类号： C07C317/44 , C07C323/60
CPC分类号： C07C317/44 , C07C323/60
摘要： The present invention provides a novel class of phenylsulfonylalkanoic acid compounds such as a structure corresponding to the formula: ##STR1## or a pharmaceutically acceptable salt thereof. A present invention phenylsulfonylalkanoic acid compound is useful for prevention or treatment of irritable bowel syndrome, biliary dyskinesia and acute pancreatitis.
摘要翻译：本发明提供了一类新的苯基磺酰基链烷酸化合物，例如对应于下式的结构：或其药学上可接受的盐。本发明苯磺酰基链烷酸化合物可用于预防或治疗肠易激综合征，胆道运动障碍和急性胰腺炎。

3. 发明授权

US3940422A Aromatic carboxylic amide derivatives 失效
标题翻译：芳香族羧酰胺衍生物
公开(公告)号：US3940422A
公开(公告)日：1976-02-24
申请号：US434252
申请日：1974-01-17
申请人： Kozaburo Harita , Yukiyoshi Ajisawa , Kinji Iizuka , Yukihiko Kinoshita , Tetsuhide Kamijo , Michihiro Kobayashi
发明人： Kozaburo Harita , Yukiyoshi Ajisawa , Kinji Iizuka , Yukihiko Kinoshita , Tetsuhide Kamijo , Michihiro Kobayashi
IPC分类号： C07C233/33 , A61K31/195 , A61P37/08 , C07C67/00 , C07C231/00 , C07C231/02 , C07C231/12 , C07C233/12 , C07C233/55 , C07C235/38 , C07D317/60 , C07D317/50
CPC分类号： A61K31/195 , C07C233/12
摘要： Novel aromatic carboxylic amides of the general formula: ##EQU1## wherein each of R.sub.1 and R.sub.2 is a hydrogen atom or an alkyl group having 1-4 carbon atoms, R.sub.3 and R.sub.4 are hydrogen atoms or together form another chemical bond, each X is a hydroxyl group, a halogen atom, an alkyl group having 1-4 carbon atoms and an alkoxy group containing 1-4 carbon atoms, and n is an integer of 1-3, with the proviso that when two Xs are alkyl or alkoxy groups, they may be connected together to form a ring, as well as pharmaceutically acceptable salts thereof.These compounds possess a strong antiallergenic action and are thus useful for treatment of asthma, hay fever, anticaria and atopic dermatitis.The above aromatic carboxylic amides can be prepared by reacting a reactive functional derivative of the general formula: ##EQU2## wherein R.sub.1, R.sub.2, R.sub.3, R.sub.4, X and n have the same meanings given above, with an aminobenzoic acid of the formula:And, if desired, converting the resulting amide into the corresponding salts.
摘要翻译：新型芳族羧酸酰胺，其通式为：R3R4 || CCC- || PARALLEL R1R2O其中R1和R2各自为氢原子或具有1-4个碳原子的烷基，R3和R4为氢原子或一起形成另一种化学物质键，每个X是羟基，卤素原子，具有1-4个碳原子的烷基和含有1-4个碳原子的烷氧基，n是1-3的整数，条件是当两个X 它们可以连接在一起形成环，以及其药学上可接受的盐。

4. 发明授权

US07719042B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07719042B2
公开(公告)日：2010-05-18
申请号：US11812192
申请日：2007-06-15
申请人： Yasuhiro Kawakatsu , Hitoshi Abiko , Hirofumi Nikaido , Nobuyuki Katsuki , Michihiro Kobayashi
发明人： Yasuhiro Kawakatsu , Hitoshi Abiko , Hirofumi Nikaido , Nobuyuki Katsuki , Michihiro Kobayashi
IPC分类号： H01L27/108
CPC分类号： H01L27/1104 , H01L27/11
摘要： A lower electrode projects outward from a common end face of an upper electrode and a capacitor film. A protective film, which is made of a different material from the capacitor film, is deposited on top of a part of the lower electrode outside the end face. The protective film also extends to the position at a certain distance inward from the end face, so that it is placed between the capacitor film and the lower electrode. The capacitor film thereby has a stepped surface near the end face due to the presence of the protective film, which suppresses the progress of damage during etching of the upper electrode and the capacitor film. Further, the protective film prevents the occurrence of damage in the lower electrode.
摘要翻译：下电极从上电极和电容器膜的公共端面向外突出。由与电容器膜不同的材料制成的保护膜沉积在端面外部的一部分下部电极的顶部。保护膜也从端面向内延伸到一定距离的位置，使其保持在电容器膜和下电极之间。由于存在保护膜，因此电容器膜具有靠近端面的台阶表面，这抑制了上电极和电容器膜的蚀刻期间的损坏进展。此外，保护膜防止在下电极中发生损坏。

5. 发明申请

US20080001197A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20080001197A1
公开(公告)日：2008-01-03
申请号：US11812192
申请日：2007-06-15
申请人： Yasuhiro Kawakatsu , Hitoshi Abiko , Hirofumi Nikaido , Nobuyuki Katsuki , Michihiro Kobayashi
发明人： Yasuhiro Kawakatsu , Hitoshi Abiko , Hirofumi Nikaido , Nobuyuki Katsuki , Michihiro Kobayashi
IPC分类号： H01L27/11 , H01L21/8244
CPC分类号： H01L27/1104 , H01L27/11
摘要： A lower electrode projects outward from a common end face of an upper electrode and a capacitor film. A protective film, which is made of a different material from the capacitor film, is deposited on top of a part of the lower electrode outside the end face. The protective film also extends to the position at a certain distance inward from the end face, so that it is placed between the capacitor film and the lower electrode. The capacitor film thereby has a stepped surface near the end face due to the presence of the protective film, which suppresses the progress of damage during etching of the upper electrode and the capacitor film. Further, the protective film prevents the occurrence of damage in the lower electrode.
摘要翻译：下电极从上电极和电容器膜的公共端面向外突出。由与电容器膜不同的材料制成的保护膜沉积在端面外部的一部分下部电极的顶部。保护膜也从端面向内延伸到一定距离的位置，使其保持在电容器膜和下电极之间。由于存在保护膜，因此电容器膜具有靠近端面的台阶表面，这抑制了上电极和电容器膜的蚀刻期间的损坏进展。此外，保护膜防止在下电极中发生损坏。

6. 发明授权

US4070484A Antiallergic composition containing aromatic carboxylic amide derivatives and method of using the same 失效
标题翻译：含有芳香族羧酸酰胺衍生物的抗过敏组合物及其使用方法
公开(公告)号：US4070484A
公开(公告)日：1978-01-24
申请号：US752885
申请日：1976-12-21
申请人： Kozaburo Harita , Yukiyoshi Ajisawa , Kinji Iizuka , Yukihiko Kinoshita , Tetsuhide Kamijo , Michihiro Kobayashi
发明人： Kozaburo Harita , Yukiyoshi Ajisawa , Kinji Iizuka , Yukihiko Kinoshita , Tetsuhide Kamijo , Michihiro Kobayashi
IPC分类号： A61K31/195 , C07C233/12 , A61K31/335 , A61K31/36
CPC分类号： A61K31/195 , C07C233/12
摘要： Aromatic carboxylic amides of the general formula: ##STR1## wherein each of R.sub.1 and R.sub.2 is a hydrogen atom or an alkyl group having 1-4 carbon atoms, R.sub.3 and R.sub.4 are hydrogen atoms or together form another chemical bond, each X is a hydroxyl group, a halogen atom, an alkyl group having 1-4 carbon atoms and an alkoxyl group containing 1-4 carbon atoms, and may be the same or different, and n is an integer of 1-3, provided that when two Xs are alkyl or alkoxyl groups, the alkyl groups thereof may be connected together into an alkylene group, and the pharmaceutically acceptable salts thereof, possess a strong antiallergic action and are thus useful for treatment of asthma, hay fever, urticaria and atopic dermatitis.
摘要翻译：芳香族羧酸酰胺，其通式如下：其中R1和R2各自为氢原子或具有1-4个碳原子的烷基，R3和R4为氢原子或一起形成另一个化学键，每个X为羟基基团，卤素原子，具有1-4个碳原子的烷基和含有1-4个碳原子的烷氧基，并且可以相同或不同，并且n是1-3的整数，条件是当两个X是烷基或烷氧基，其烷基可以一起连接成亚烷基，其药学上可接受的盐具有强的抗过敏作用，因此可用于治疗哮喘，花粉症，荨麻疹和特应性皮炎。

7. 发明授权

US4026896A Aromatic amidocarboxylic acids and pharmaceutical compositions thereof 失效
标题翻译：芳族酰胺羧酸及其药物组合物
公开(公告)号：US4026896A
公开(公告)日：1977-05-31
申请号：US568423
申请日：1975-04-16
申请人： Kozaburo Harita , Yukiyoshi Ajisawa , Kinji Iizuka , Michio Toda , Yukihiko Kinoshita , Tetsuhide Kamijo , Michihiro Kobayashi
发明人： Kozaburo Harita , Yukiyoshi Ajisawa , Kinji Iizuka , Michio Toda , Yukihiko Kinoshita , Tetsuhide Kamijo , Michihiro Kobayashi
IPC分类号： C07D317/60 , C07C103/84
CPC分类号： C07D317/60
摘要： New aromatic amidocarboxylic acid derivatives of the general formula: ##STR1## wherein R.sub.1 and R.sub.2 each represent a hydrogen atom or an alkyl gp with 1-4 carbon atoms; R.sub.3 and R.sub.4 each represent a hydrogen atom or may be combined together to form an additional chemical bond; X represents a hydroxyl group, a halogen atom, a straight or branched chain saturated or unsaturated alkyl group with 1-4 carbon atoms, a straight or branched chain saturated or unsaturated alkoxy group with 1-4 carbon atoms, an acyloxy group with 1-4 carbon atoms, or a cycloalkyl group with up to 6 carbon atoms; n is zero or an integer of 1-3 with the proviso that when n is 2 or 3, X's may be the same or different and that when two X's are commonly the alkyl or alkoxy group, both X's may be combined together to form a ring; and Y represents a straight or branched chain alkylene group or a straight or branched chain oxyalkylene group connected to the benzene nucleus through an oxygen atom, as well as physiologically acceptable salts thereof.The new compounds possess a strong antiallergic effect and are thus useful for the treatment of asthma, hay fever, urticaria and atopic dermatitis.The above-mentioned aromatic amidocarboxylic acid and a salt thereof are prepared, for example, by reacting a reactive functional derivative of the general formula: ##STR2## wherein R.sub.1, R.sub.2, R.sub.3, R.sub.4, X and n have the same meanings as given above, with an aminophenylalkylcarboxylic acid derivative or an aminophenoxyalkylcarboxylic acid dervative of the general formula: ##STR3## wherein Y has the same meaning as given above, and if desired, converting the resulting amidocarboxylic acid into a corresponding salt thereof or vice versa.
摘要翻译：新的芳族酰胺基羧酸衍生物，其通式如下：其中R 1和R 2各自表示氢原子或具有1-4个碳原子的烷基; R 3和R 4各自表示氢原子，或者可以组合在一起形成附加的化学键; X表示羟基，卤素原子，具有1-4个碳原子的直链或支链饱和或不饱和烷基，具有1-4个碳原子的直链或支链饱和或不饱和烷氧基，具有1- 4个碳原子或具有至多6个碳原子的环烷基; n为0或1-3的整数，条件是当n为2或3时，X可以相同或不同，并且当两个X通常为烷基或烷氧基时，两个X可以组合在一起形成环; Y表示通过氧原子与苯环连接的直链或支链亚烷基或直链或支链氧化烯基，以及其生理上可接受的盐。

8. 发明申请

US20080224196A1 SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS FOR THE SAME 审中-公开
标题翻译：半导体器件及其制造工艺
公开(公告)号：US20080224196A1
公开(公告)日：2008-09-18
申请号：US12040315
申请日：2008-02-29
申请人： Tomohiko HIGASHINO , Nobuyuki KATSUKI , Yasuhiro KAWAKATSU , Michihiro KOBAYASHI
发明人： Tomohiko HIGASHINO , Nobuyuki KATSUKI , Yasuhiro KAWAKATSU , Michihiro KOBAYASHI
IPC分类号： H01L27/11 , H01L21/70
CPC分类号： G11C11/4125
摘要： A semiconductor device includes a first inverter, a second inverter, and an inner wiring connecting the inverters, in which the inner wiring forms a capacitor element, and the capacitor element includes an interlayer insulation film having an aperture on a semiconductor substrate, a lower electrode covering a bottom wall and a side wall of the aperture, the bottom wall being the semiconductor substrate and the side wall being a part of the interlayer insulation film, a capacitor insulation film arranged on the lower electrode and a part of the interlayer insulation film, the capacitor insulation film covering corners of the capacitor insulation film, the corners being situated at opposite side of the semiconductor substrate, and an upper electrode on the capacitor insulation film, the upper electrode covering the aperture.
摘要翻译：半导体器件包括第一反相器，第二反相器和连接反相器的内部布线，其中内部布线形成电容器元件，并且电容器元件包括在半导体衬底上具有孔的层间绝缘膜，下部电极覆盖孔的底壁和侧壁，底壁是半导体衬底，侧壁是层间绝缘膜的一部分，布置在下电极上的电容器绝缘膜和层间绝缘膜的一部分，电容器绝缘膜覆盖电容器绝缘膜的拐角，拐角位于半导体衬底的相对侧，电容器绝缘膜上的上电极，覆盖孔的上电极。

9. 发明授权

US07923843B2 Semiconductor device with a contact plug connected to multiple interconnects formed within 失效
标题翻译：具有接触插头的半导体器件连接到内部形成的多个互连
公开(公告)号：US07923843B2
公开(公告)日：2011-04-12
申请号：US11806231
申请日：2007-05-30
申请人： Michihiro Kobayashi , Hirofumi Nikaido , Nobuyuki Katsuki , Yasuhiro Kawakatsu
发明人： Michihiro Kobayashi , Hirofumi Nikaido , Nobuyuki Katsuki , Yasuhiro Kawakatsu
IPC分类号： H01L23/48
CPC分类号： H01L23/522 , H01L21/76816 , H01L21/76895 , H01L23/5226 , H01L27/11 , H01L2924/0002 , H01L2924/00
摘要： Two interconnect layers are electrically connected while reducing the number of manufacturing steps. A contact plug 9c which is formed into a beaded shape in a layer underlying two interconnects 11C and 11D and which also electrically connects the two interconnects 11C and 11D is included. The two interconnects 11C and 11D are separated to each other and are formed in a same layer. The contact plug 9c is simultaneously formed with a contact plug 9b to be connected to an interconnect 4b and a contact plug 9a to be connected to a source/drain region 6.
摘要翻译：两个互连层电连接，同时减少制造步骤的数量。包括在两个互连11C和11D下面的层中形成为串珠形状并且还电连接两个互连11C和11D的接触插塞9c。两个互连11C和11D彼此分离并形成在相同的层中。接触插头9c同时形成有接触插头9b以连接到互连件4b和接触插头9a以连接到源极/漏极区域6。

10. 发明授权

US07593252B2 Semiconductor apparatus having shield line provided between internal layer and input/output line in layout cell 有权
标题翻译：具有屏蔽线的半导体装置设置在布线单元的内层和输入/输出线之间
公开(公告)号：US07593252B2
公开(公告)日：2009-09-22
申请号：US11798736
申请日：2007-05-16
申请人： Nobuyuki Katsuki , Hirofumi Nikaido , Michihiro Kobayashi , Yasuhiro Kawakatsu
发明人： Nobuyuki Katsuki , Hirofumi Nikaido , Michihiro Kobayashi , Yasuhiro Kawakatsu
IPC分类号： G11C11/00
CPC分类号： G11C11/412 , H01L27/1104
摘要： A semiconductor apparatus includes an internal layer where a first power supply line to provide a first power supply to transistors in a layout cell and an internal cell line to connect transistors in the layout cell are placed, an input/output line connected with an input/output terminal of the layout cell is placed, and a shield line which is placed between the internal layer and the input/output line so as to cover the internal layer and the first power supply line.
摘要翻译：一种半导体装置，包括内部层，其中设置有用于向布局单元中的晶体管提供第一电源的第一电源线和用于连接布局单元中的晶体管的内部单元线路，与输入/ 放置布局单元的输出端子，以及屏蔽线，其被布置在内层和输入/输出线之间以覆盖内层和第一电源线。

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