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1. 发明申请

US20050170554A1 Multi-layer inductor formed in a semiconductor substrate and having a core of ferromagnetic material 有权
标题翻译：多层电感器形成在半导体衬底中并且具有铁磁材料的芯
公开(公告)号：US20050170554A1
公开(公告)日：2005-08-04
申请号：US10513121
申请日：2003-05-07
申请人： Michelle Griglione , Paul Layman , Mohamed Laradji , J. Thomson , Samir Chaudhry
发明人： Michelle Griglione , Paul Layman , Mohamed Laradji , J. Thomson , Samir Chaudhry
IPC分类号： H01L21/02 , H01L27/08 , H01L29/12 , H01L21/00 , H01L21/16
CPC分类号： B82Y10/00 , H01L27/08 , H01L28/10 , H01L29/127
摘要： A thin-film multilayer high-Q inductor having a ferromagnetic core and spanning at least three metal layers is formed by forming a plurality of parallel first metal runners on the semiconductor substrate. A plurality of first and second vertical conductive vias are formed in electrical connection with each end of the plurality of metal runners. A plurality of third and fourth conductive vias are formed over the plurality of first and second conductive vias and a plurality of second metal runners are formed interconnecting the plurality of third and fourth conductive vias. The first metal runners and second metal runners are oriented such that one end of a first metal runner is connected to an overlying end of a second metal runner by way of the first and third vertical conductive vias. The other end of the second metal runner is connected to the next metal one runner by way of the second and fourth vertical conductive vias., forming a continuously conductive structure having a generally helical shape. An inductor core is formed by first forming a silicon layer between each one of the plurality of first metal runners. A germanium layer is formed thereover and the structure is annealed, causing formation of quantum dots of germanium. A cobalt layer is then formed over the quantum dots and another anneal process drives the cobalt into the quantum dots, where it is captured to form the ferromagnetic core.
摘要翻译：通过在半导体衬底上形成多个平行的第一金属流道，形成具有铁磁芯并跨越至少三个金属层的薄膜多层高Q电感器。多个第一和第二垂直导电通孔形成为与多个金属流道的每个端部电连接。在多个第一和第二导电通孔之上形成多个第三和第四导电通孔，并且形成互连多个第三和第四导电通孔的多个第二金属流道。第一金属流道和第二金属流道被定向成使得第一金属流道的一端通过第一和第三垂直导电通孔连接到第二金属流道的上覆端。第二金属流道的另一端通过第二和第四垂直导电通孔连接到下一个金属一个流道，形成具有大致螺旋形状的连续导电结构。通过首先在多个第一金属流道中的每一个之间形成硅层来形成电感器芯。在其上形成锗层，结构退火，形成锗量子点。然后在量子点上形成钴层，另一个退火工艺将钴驱动到量子点中，在其中被捕获以形成铁磁芯。

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