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1. 发明授权

US06713831B1 Borderless contact architecture 有权
标题翻译：无边界联络体系
公开(公告)号：US06713831B1
公开(公告)日：2004-03-30
申请号：US10010837
申请日：2001-12-04
申请人： Sharmin Sadoughi , Mira Ben-Tzur , Michal E. Fastow , Saurabh Dutta Chowdhury
发明人： Sharmin Sadoughi , Mira Ben-Tzur , Michal E. Fastow , Saurabh Dutta Chowdhury
IPC分类号： H01L310232
CPC分类号： H01L21/76829 , H01L21/0276 , H01L21/31144 , H01L21/3212 , H01L21/76897 , H01L23/5226 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method and a system are provided for forming a borderless contact structure. In particular, a method is provided which includes using an inorganic anti-reflective coating layer as an etch stop to form a borderless contact structure. In some embodiments, the method may include patterning an interconnect line above an inorganic layer with anti-reflective properties and depositing an upper interlevel dielectric layer above the interconnect line. A trench may then be etched within the upper interlevel dielectric layer such that a borderless contact structure may be formed in contact with said interconnect line. Consequently, a semiconductor topography is provided, in such an embodiment, which includes an inorganic anti-reflective coating layer arranged below an interconnect line and a contact structure arranged upon the interconnect line. In some embodiments, a width of the contact structure may be greater than a width of the interconnect line.
摘要翻译：提供了一种用于形成无边界接触结构的方法和系统。特别地，提供了一种方法，其包括使用无机抗反射涂层作为蚀刻停止物以形成无边界接触结构。在一些实施例中，该方法可以包括以具有抗反射特性的方式对无机层上方的互连线进行图案化，并且在互连线上方沉积上部层间电介质层。然后可以在上层间介质层内蚀刻沟槽，使得可以形成与所述互连线接触的无边界接触结构。因此，在这样的实施例中，提供半导体形貌，其包括布置在互连线下方的无机抗反射涂层和布置在互连线上的接触结构。在一些实施例中，接触结构的宽度可以大于互连线的宽度。

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