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1. 发明申请

US20120261269A1 PROCESS FOR PRODUCTION OF POLYSILICON AND SILICON TETRACHLORIDE 审中-公开
标题翻译：生产聚硅氧烷和硅酮四氯化磷的方法
公开(公告)号：US20120261269A1
公开(公告)日：2012-10-18
申请号：US13518395
申请日：2010-12-22
申请人： Wataru Kagohashi , Matsuhide Horikawa , Kohsuke Kakiuchi
发明人： Wataru Kagohashi , Matsuhide Horikawa , Kohsuke Kakiuchi
IPC分类号： C01B33/023 , C01B33/08 , C25C3/02 , C25C3/06 , C25C3/34
CPC分类号： C01B33/025 , C01B33/033 , C01B33/035 , C01B33/10721
摘要： A process for production of polysilicon and silicon tetrachloride is provided in which a raw material that is supplied stably and is available at low cost can be used, chlorination reaction can be smoothly promoted, impurities generated after chlorination reaction can be controlled, and production efficiency is superior in a polysilicon producing step. The process includes a step of chlorination in which a granulated body consisting of silicon dioxide and carbon-containing material is chlorinated to generate silicon tetrachloride, a step of reduction in which silicon tetrachloride is reduced by a reducing metal to generate polysilicon, and a step of electrolysis in which chloride of the reducing metal by-produced in the reduction step is molten salt-electrolyzed to generate the reducing metal and chlorine gas. In the process, chlorine gas is supplied to the silicon dioxide and the carbon-containing material in the presence of oxygen gas, and these are reacted in the chlorination step, the reducing metal generated in the electrolysis step is reused in the reduction step as a reducing agent of silicon tetrachloride, and the chlorine gas generated in the electrolysis step is reused in the chlorination step.
摘要翻译：提供一种生产多晶硅和四氯化硅的方法，其中可以使用稳定供应并且可以低成本获得的原料，可以平稳地促进氯化反应，可以控制氯化反应后产生的杂质，生产效率为优于多晶硅生产步骤。该方法包括氯化步骤，其中将由二氧化硅和含碳材料组成的造粒体氯化以产生四氯化硅，还原其中四氯化硅由还原性金属还原以产生多晶硅的步骤，以及步骤在还原步骤中副产的还原金属的氯化物进行熔融盐电解以产生还原金属和氯气的电解。在该方法中，在氧气存在下，向二氧化硅和含碳材料供给氯气，并且在氯化工序中使其反应，在还原工序中生成的还原金属在还原工序中再利用四氯化钛的还原剂，并且在电解步骤中产生的氯气在氯化步骤中重复使用。

2. 发明授权

US06352681B1 Method for producing barium titanate powder 失效
标题翻译：钛酸钡粉末的制造方法
公开(公告)号：US06352681B1
公开(公告)日：2002-03-05
申请号：US09446826
申请日：1999-12-29
申请人： Matsuhide Horikawa , Hideki Sakai , Wataru Kagohashi
发明人： Matsuhide Horikawa , Hideki Sakai , Wataru Kagohashi
IPC分类号： C01F1100
CPC分类号： C01G23/006 , C01P2002/34 , C01P2004/32 , C01P2004/52 , C01P2004/62
摘要： A process for production of a barium titanate powder, the process comprises adding an aqueous solution of a titanium compound and an aqueous solution of a barium compound and an alkali metal hydroxide into an alkaline solution under stirring, thereby contacting the aqueous solutions with each other while controlling the molar ratio of the titanium compound to the barium compound to be within the range of 0.8 to 1.2.
摘要翻译：一种制造钛酸钡粉末的方法，该方法包括在搅拌下将钛化合物的水溶液和钡化合物和碱金属氢氧化物的水溶液加入到碱性溶液中，由此使水溶液彼此接触，同时控制钛化合物与钡化合物的摩尔比在0.8〜1.2的范围内。

3. 发明授权

US06284216B1 Barium titanate powder 有权
标题翻译：钛酸钡粉
公开(公告)号：US06284216B1
公开(公告)日：2001-09-04
申请号：US09462659
申请日：2000-01-12
申请人： Hideki Sakai , Matsuhide Horikawa , Wataru Kagohashi
发明人： Hideki Sakai , Matsuhide Horikawa , Wataru Kagohashi
IPC分类号： C01G2300
CPC分类号： H01G4/1227 , C01G23/006 , C01P2004/52 , C01P2004/62 , C01P2006/10 , C01P2006/40
摘要： A barium titanate powder has an average particle size ranging from 0.1-1.0 &mgr;m, a CV value (standard deviation of the particle size/the average particle size) of the particle size distribution being 40% or less, and a zeta-potential ranging from −30 to −60 mV measured by a laser Doppler method using electrophoresis at pH 6.4. The barium titanate powder is presintered at a temperature ranging from 900 to 1200° C. The barium titanate powder has superior dispersion characteristics in slurrying, and is capable of partly inhibiting agglomeration of the barium titanate after sintering. It is therefore suitable as materials for dielectric layers of multilayer ceramic capacitors. In particular, the barium titanate has a sintered density of 95% or more of the theoretical density thereof, and the dielectric constant is 4000 or more.
摘要翻译：钛酸钡粉末的平均粒径为0.1〜1.0μm，粒径分布的CV值（粒径/平均粒径的标准偏差）为40％以下，ζ电位范围为通过激光多普勒法在pH6.4下使用电泳测量-30至-60mV。钛酸钡粉末在900〜1200℃的温度下进行预烧结。钛酸钡粉末在制浆时具有优异的分散特性，能够部分抑制烧结后的钛酸钡的凝集。因此，它适用于多层陶瓷电容器介质层的材料。特别是钛酸钡的烧结密度为理论密度的95％以上，介电常数为4000以上。

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