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1. 发明申请

US20120261269A1 PROCESS FOR PRODUCTION OF POLYSILICON AND SILICON TETRACHLORIDE 审中-公开
标题翻译：生产聚硅氧烷和硅酮四氯化磷的方法
公开(公告)号：US20120261269A1
公开(公告)日：2012-10-18
申请号：US13518395
申请日：2010-12-22
申请人： Wataru Kagohashi , Matsuhide Horikawa , Kohsuke Kakiuchi
发明人： Wataru Kagohashi , Matsuhide Horikawa , Kohsuke Kakiuchi
IPC分类号： C01B33/023 , C01B33/08 , C25C3/02 , C25C3/06 , C25C3/34
CPC分类号： C01B33/025 , C01B33/033 , C01B33/035 , C01B33/10721
摘要： A process for production of polysilicon and silicon tetrachloride is provided in which a raw material that is supplied stably and is available at low cost can be used, chlorination reaction can be smoothly promoted, impurities generated after chlorination reaction can be controlled, and production efficiency is superior in a polysilicon producing step. The process includes a step of chlorination in which a granulated body consisting of silicon dioxide and carbon-containing material is chlorinated to generate silicon tetrachloride, a step of reduction in which silicon tetrachloride is reduced by a reducing metal to generate polysilicon, and a step of electrolysis in which chloride of the reducing metal by-produced in the reduction step is molten salt-electrolyzed to generate the reducing metal and chlorine gas. In the process, chlorine gas is supplied to the silicon dioxide and the carbon-containing material in the presence of oxygen gas, and these are reacted in the chlorination step, the reducing metal generated in the electrolysis step is reused in the reduction step as a reducing agent of silicon tetrachloride, and the chlorine gas generated in the electrolysis step is reused in the chlorination step.
摘要翻译：提供一种生产多晶硅和四氯化硅的方法，其中可以使用稳定供应并且可以低成本获得的原料，可以平稳地促进氯化反应，可以控制氯化反应后产生的杂质，生产效率为优于多晶硅生产步骤。该方法包括氯化步骤，其中将由二氧化硅和含碳材料组成的造粒体氯化以产生四氯化硅，还原其中四氯化硅由还原性金属还原以产生多晶硅的步骤，以及步骤在还原步骤中副产的还原金属的氯化物进行熔融盐电解以产生还原金属和氯气的电解。在该方法中，在氧气存在下，向二氧化硅和含碳材料供给氯气，并且在氯化工序中使其反应，在还原工序中生成的还原金属在还原工序中再利用四氯化钛的还原剂，并且在电解步骤中产生的氯气在氯化步骤中重复使用。

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