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1. 发明申请

US20090068402A1 Foamed Sheet for Reflector, Reflector, and Method for Producing Foamed Sheet for Reflector 审中-公开
标题翻译：用于反射器的反光板，反射器和生产发泡片的方法的发泡片
公开(公告)号：US20090068402A1
公开(公告)日：2009-03-12
申请号：US11918735
申请日：2006-04-14
申请人： Kenichi Yoshida , Masahiro Shindo , Kazutoshi Hitomi , Hiroyuki Tarumoto
发明人： Kenichi Yoshida , Masahiro Shindo , Kazutoshi Hitomi , Hiroyuki Tarumoto
IPC分类号： B32B5/18 , B29D7/01 , G02F1/1335 , B32B27/32 , C08J9/04
CPC分类号： B32B27/065 , B29C44/22 , B29D11/00605 , B32B5/18 , B32B27/20 , B32B27/32 , B32B2266/025 , B32B2307/538 , B32B2311/16 , B32B2323/10 , G02B5/0221 , G02B5/0226 , G02B5/0247 , G02B5/0268 , G02B5/0284 , G02B5/09 , Y10T428/24355
摘要： The present invention provides a foamed sheet for a reflector which can be transformed to a reflector having a desired shape by thermoforming.A foamed sheet A for a reflector of the present invention is characterized by being a foamed sheet for a reflector including a polypropylene-based resin foamed sheet 1 which has an average cell diameter of from 50 to 650 μm and at least one surface which is an uneven surface 12 formed by cells 11 located in the vicinity of the surface, and a polypropylene-based resin non-foamed sheet 3 integrally laminated on the polypropylene-based resin foamed sheet 1 in conformity with the uneven surface 12 and having an uneven surface 31, wherein the foamed sheet A for a reflector contains an inorganic filler in an amount of from 50 to 200 g/m2, the whole or part of the inorganic filler is contained in the polypropylene-based resin foamed sheet 1, a refractive index of an inorganic filler 2 differs by 1.0 or more from a refractive index of the polypropylene-based resin, and the foamed sheet A for a reflector has an overall thickness of from 0.2 to 2.0 mm and a light reflectance of 97% or more.
摘要翻译：本发明提供了一种用于反射器的发泡片材，其可以通过热成型转变成具有所需形状的反射器。本发明的反射器用发泡片材A的特征在于，包括平均泡孔直径为50〜650μm的聚丙烯类树脂发泡片材1和反射器用发泡片材A的至少一面，由位于表面附近的电池11形成的不平坦表面12以及聚丙烯系树脂发泡片3一体地层合在聚丙烯类树脂发泡片1上，与不平坦表面12一致并具有不平坦表面31 其特征在于，所述反射板用发泡片材A含有50〜200g / m 2的无机填料，所述聚丙烯类树脂发泡片材1中含有全部或部分无机填料，折射率为无机填料2与聚丙烯类树脂的折射率相差1.0以上，反射体用发泡片A的总厚度为0.2〜2.0mm，光反射率为97％以上。

2. 发明授权

US6137120A Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US6137120A
公开(公告)日：2000-10-24
申请号：US918010
申请日：1997-08-27
申请人： Masahiro Shindo , Daisuke Kosaka , Tetsuo Hikawa , Akira Takata , Yukihiro Ukai , Takashi Sawada , Toshifumi Asakawa
发明人： Masahiro Shindo , Daisuke Kosaka , Tetsuo Hikawa , Akira Takata , Yukihiro Ukai , Takashi Sawada , Toshifumi Asakawa
IPC分类号： B81B3/00 , C23C16/48 , C23C16/511 , C23C16/56 , G01L9/00 , G01P15/08 , H01H59/00 , H01J37/32 , H01L27/12 , H01L31/0376 , H01L31/078 , H01L31/18 , H02N1/00 , H01L29/04 , H01L31/036
CPC分类号： H01J37/32678 , B81C1/0038 , C23C16/48 , C23C16/486 , C23C16/511 , C23C16/56 , G01L9/0042 , G01P15/0802 , H01L27/12 , H01L27/1203 , H01L31/03762 , H01L31/0693 , H01L31/0725 , H01L31/073 , H01L31/078 , H01L31/1804 , H01L31/1828 , H01L31/186 , H02N1/002 , B81B2203/0109 , B81B2203/0118 , B81B2203/0127 , B81C2201/0109 , G02F2001/136281 , H01H59/0009 , Y02E10/543 , Y02E10/544 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.
摘要翻译：为了容易且精确地制造包括由单晶材料制成且具有复杂结构的构件的微加工机构，（100）面向上的单晶Si衬底（1102）的最上层（1104）从多个规定方向对Ne原子电流进行照射，使得最上层（1104）的晶体取向被转换为（111）面向上方向的取向。采用掩模构件（106）作为屏蔽构件，从其底面各向异性地蚀刻衬底（1102），从而形成V形槽（1112）。此时，最上层（1104）用作蚀刻停止器。因此，可以容易地制造具有均匀厚度的单晶隔膜的微加工机。具有复合构件的微机械，例如由单晶材料制成的图可以容易地通过无接合制造。

3. 发明授权

US6106734A Micromachine manufacture using gas beam crystallization 失效
标题翻译：微机械制造采用气束结晶
公开(公告)号：US6106734A
公开(公告)日：2000-08-22
申请号：US917267
申请日：1997-08-25
申请人： Masahiro Shindo , Daisuke Kosaka , Tetsuo Hikawa , Akira Takata , Yukihiro Ukai , Takashi Sawada , Toshifumi Asakawa
发明人： Masahiro Shindo , Daisuke Kosaka , Tetsuo Hikawa , Akira Takata , Yukihiro Ukai , Takashi Sawada , Toshifumi Asakawa
IPC分类号： B81B3/00 , C23C16/48 , C23C16/511 , C23C16/56 , G01L9/00 , G01P15/08 , H01H59/00 , H01J37/32 , H01L27/12 , H01L31/0376 , H01L31/078 , H01L31/18 , H02N1/00 , H01L21/302
CPC分类号： H01J37/32678 , B81C1/0038 , C23C16/48 , C23C16/486 , C23C16/511 , C23C16/56 , G01L9/0042 , G01P15/0802 , H01L27/12 , H01L27/1203 , H01L31/03762 , H01L31/0693 , H01L31/0725 , H01L31/073 , H01L31/078 , H01L31/1804 , H01L31/1828 , H01L31/186 , H02N1/002 , B81B2203/0109 , B81B2203/0118 , B81B2203/0127 , B81C2201/0109 , G02F2001/136281 , H01H59/0009 , Y02E10/543 , Y02E10/544 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diaphragm which is made of a single-crystalline material can be easily manufactured through no junction.
摘要翻译：为了容易且精确地制造包括由单晶材料制成且具有复杂结构的构件的微加工机构，（100）面向上的单晶Si衬底（1102）的最上层（1104）从多个规定方向对Ne原子电流进行照射，使得最上层（1104）的晶体取向被转换为（111）面向上方向的取向。采用掩模构件（106）作为屏蔽构件，从其底面各向异性地蚀刻衬底（1102），从而形成V形槽（1112）。此时，最上层（1104）用作蚀刻停止器。因此，可以容易地制造具有均匀厚度的单晶隔膜的微加工机。具有由单晶材料制成的诸如隔膜的复杂构件的微加工机可以容易地通过无接合制造。

4. 发明授权

US6032611A Apparatus for forming single-crystalline thin film by beam irradiator and beam reflecting device 失效
标题翻译：用于通过光束照射器和光束反射装置形成单晶薄膜的装置
公开(公告)号：US6032611A
公开(公告)日：2000-03-07
申请号：US820600
申请日：1997-03-19
申请人： Toshifumi Asakawa , Masahiro Shindo , Toshikazu Yoshimizu , Sumiyoshi Ueyama
发明人： Toshifumi Asakawa , Masahiro Shindo , Toshikazu Yoshimizu , Sumiyoshi Ueyama
IPC分类号： C23C16/48 , C23C16/511 , C23C16/56 , C30B23/02 , C30B25/10 , H01L21/20 , H01L21/205 , C23C16/00
CPC分类号： H01L21/02546 , C23C16/48 , C23C16/486 , C23C16/511 , C23C16/56 , C30B23/02 , C30B25/105 , C30B29/06 , H01L21/02381 , H01L21/0242 , H01L21/0245 , H01L21/02532 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L21/02689 , Y10S117/905 , Y10T117/10 , Y10T117/1008
摘要： In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reaction gas inlet pipe (13) is sprayed onto an SiO.sub.2 substrate (11) by an action of the Ne atom current, so that an amorphous Si thin film is grown on the substrate (11) by a plasma CVD reaction. At the same time, a part of the Ne atom current having high directivity is directly incident upon the substrate (11), while another part thereof is incident upon the substrate (11) after its course is bent by a reflector (12). The reflector (12) is so set that all directions of the parts of the Ne atom current which are incident upon the substrate (11) are perpendicular to densest planes of single-crystalline Si. Therefore, the as-grown amorphous Si is sequentially converted to a single-crystalline Si thin film having crystal axes which are so regulated that the densest planes are oriented perpendicularly to the respective directions of incidence, by an action of the law of Bravais. Thus, a single-crystalline thin film is formed on a polycrystalline substrate.
摘要翻译：为了使用等离子体CVD在多晶衬底上形成单晶薄膜，由ECR离子发生器（2）形成向下的主要为中性的Ne原子电流。从反应气体导入管（13）供给的反应气体（例如硅烷气体）通过Ne原子电流的作用被喷射到SiO2基板（11）上，使得在基板上生长非晶Si薄膜 11）通过等离子体CVD反应。同时，具有高方向性的Ne原子电流的一部分直接入射到衬底（11）上，而另一部分在其反射器（12）弯曲之后入射到衬底（11）上。反射器（12）被设定为入射到基板（11）上的Ne原子电流部分的所有方向垂直于单晶Si的最密的平面。因此，通过布拉维斯定律的作用，将生长的非晶Si顺序地转变为具有如此规定的晶轴的单晶Si薄膜，使得最密的平面垂直于相应的入射方向取向。因此，在多晶基板上形成单晶薄膜。

5. 发明授权

US5814150A Method of and apparatus for forming single-crystalline thin film, beam irradiator, beam irradiating method and beam reflecting device 失效
标题翻译：用于形成单晶薄膜，光束照射器，光束照射方法和光束反射装置的方法和装置
公开(公告)号：US5814150A
公开(公告)日：1998-09-29
申请号：US598115
申请日：1996-02-07
申请人： Toshifumi Asakawa , Masahiro Shindo , Toshikazu Yoshimizu , Sumiyoshi Ueyama
发明人： Toshifumi Asakawa , Masahiro Shindo , Toshikazu Yoshimizu , Sumiyoshi Ueyama
IPC分类号： C23C16/48 , C23C16/511 , C23C16/56 , C30B23/02 , C30B25/10 , H01L21/20 , H01L21/205 , C30B1/02
CPC分类号： H01L21/02546 , C23C16/48 , C23C16/486 , C23C16/511 , C23C16/56 , C30B23/02 , C30B25/105 , C30B29/06 , H01L21/02381 , H01L21/0242 , H01L21/0245 , H01L21/02532 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L21/02689 , Y10S117/905 , Y10T117/10 , Y10T117/1008
摘要： In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reaction gas inlet pipe (13) is sprayed onto an SiO.sub.2 substrate (11) by an action of the Ne atom current, so that an amorphous Si thin film is grown on the substrate (11) by a plasma CVD reaction. At the same time, a part of the Ne atom current having high directivity is directly incident upon the substrate (11), while another part thereof is incident upon the substrate (11) after its course is bent by a reflector (12). The reflector (12) is so set that all directions of the parts of the Ne atom current which are incident upon the substrate (11) are perpendicular to densest planes of single-crystalline Si. Therefore, the as-grown amorphous Si is sequentially converted to a single-crystalline Si thin film having crystal axes which are so regulated that the densest planes are oriented perpendicularly to the respective directions of incidence, by an action of the law of Bravais. Thus, a single-crystalline thin film is formed on a polycrystalline substrate.
摘要翻译：为了使用等离子体CVD在多晶衬底上形成单晶薄膜，由ECR离子发生器（2）形成向下的主要为中性的Ne原子电流。从反应气体导入管（13）供给的反应气体（例如硅烷气体）通过Ne原子电流的作用被喷射到SiO2基板（11）上，使得在基板上生长非晶Si薄膜 11）通过等离子体CVD反应。同时，具有高方向性的Ne原子电流的一部分直接入射到衬底（11）上，而另一部分在其反射器（12）弯曲之后入射到衬底（11）上。反射器（12）被设定为入射到基板（11）上的Ne原子电流部分的所有方向垂直于单晶Si的最密的平面。因此，通过布拉维斯定律的作用，将生长的非晶Si顺序地转变为具有如此规定的晶轴的单晶Si薄膜，使得最密的平面垂直于相应的入射方向取向。因此，在多晶基板上形成单晶薄膜。

6. 发明授权

US4922432A Knowledge based method and apparatus for designing integrated circuits using functional specifications 失效
标题翻译：使用功能规格设计集成电路的基于知识的方法和设备
公开(公告)号：US4922432A
公开(公告)日：1990-05-01
申请号：US143821
申请日：1988-01-13
申请人： Hideaki Kobayashi , Masahiro Shindo
发明人： Hideaki Kobayashi , Masahiro Shindo
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F17/5045
摘要： The present invention provides a computer-aided design system and method for designing an application specific integrated circuit which enables a user to define functional architecture independent specifications for the integrated circuit and which translates the functional architecture independent specifications into the detailed information needed for directly producing the integrated circuit. The functional architecture independent specifications of the desired integrated circuit can be defined at the functional architecture independent level in a flowchart format. From the flowchart, the system and method uses artificial intelligence and expert systems technology to generate a system controller, to select the necessary integrated circuit hardware cells needed to achieve the functional specifications, and to generate data and control paths for operation of the integrated circuit. This list of hardware cells and their interconnection requirements is set forth in a netlist. From the netlist it is possible using known manual techniques or existing VLSI CAD layout systems to generate the detailed chip level topological information (mask data) required to produce the particular application specific integrated circuit.
摘要翻译：本发明提供了一种用于设计专用集成电路的计算机辅助设计系统和方法，其使得用户能够定义用于集成电路的独立于功能架构的功能架构，并且将功能架构独立的规范转换成直接产生所需的详细信息集成电路。可以在功能架构独立级别以流程图形式定义所需集成电路的独立功能的规范。从流程图中，系统和方法使用人工智能和专家系统技术来生成系统控制器，选择实现功能规范所需的集成电路硬件单元，并生成用于集成电路运行的数据和控制路径。硬件单元列表及其互连要求列在网表中。从网表可以使用已知的手动技术或现有的VLSI CAD布局系统来生成产生特定专用集成电路所需的详细的芯片级拓扑信息（掩模数据）。

7. 发明授权

US07386576B2 Data file storage device with automatic filename creation function, data file storage program and data file storage method 有权
标题翻译：具有自动文件名创建功能的数据文件存储设备，数据文件存储程序和数据文件存储方法
公开(公告)号：US07386576B2
公开(公告)日：2008-06-10
申请号：US10745026
申请日：2003-12-23
申请人： Akira Watanabe , Masahiro Shindo
发明人： Akira Watanabe , Masahiro Shindo
IPC分类号： G06F17/30
CPC分类号： H04N1/32112 , H04N1/21 , H04N2201/3214 , H04N2201/3215 , H04N2201/3226 , H04N2201/3247 , H04N2201/3277 , Y10S707/99952
摘要： A portable device includes a data file storage device, a camera section with an image pickup function and a schedule management section that manages a user's schedule. The data file storage device includes a picture file storage region for storing picture files and a schedule storage region for storing schedule data. When storing a picture file of a picture picked up by the camera section in the picture file storage region, schedule data that matches the file creation date and time of the picture file is searched among the entire schedule data stored in advance in the schedule storage region. When there is schedule data that matches the file creation date and time, schedule character data that represents the content of the schedule is obtained and a filename and/or a folder name is created based on the schedule character data obtained, or the schedule character data is embedded in EXIF data and stored.
摘要翻译：便携式设备包括数据文件存储设备，具有图像拾取功能的相机部分和管理用户的日程表的日程管理部分。数据文件存储装置包括用于存储图像文件的图像文件存储区域和用于存储时间表数据的时间表存储区域。当将图像文件存储区域中由照相机部分拾取的图像的图像文件存储在图像文件存储区域中时，将预先存储在调度存储区域中的整个调度数据中搜索与图像文件的文件创建日期和时间相匹配的调度数据。当存在与文件创建日期和时间相匹配的日程表数据时，获取表示日程表内容的日程表字符数据，并根据获得的日程表字符数据或日程表字符数据创建文件名和/或文件夹名称嵌入EXIF数据并存储。

8. 发明授权

US06538890B2 Heat sink element and high-frequency electronic circuit substrate using such 失效
公开(公告)号：US06538890B2
公开(公告)日：2003-03-25
申请号：US10006676
申请日：2001-12-10
申请人： Choichirou Kodaka , Masahiro Shindo , Tadashi Ito
发明人： Choichirou Kodaka , Masahiro Shindo , Tadashi Ito
IPC分类号： H05K720
CPC分类号： H05K7/20 , H05K1/0203 , H05K1/0237 , H05K2201/1003 , H05K2201/10265 , H05K2201/10492
摘要： A heat sink element in the form of a coil with a high thermal conductivity is formed. One end of the heat sink element is directly connected to a circuit element connection conductor under a high potential in a high-frequency circuit mounted on an electronic circuit substrate, and the other end thereof is directly secured to a metal case having the electronic circuit substrate contained therein. As a result, the heat sink element serves as a heat channel transferring the heat generated due to the temperature increase in the circuit element connection conductor to the metal case by means of thermal conductivity.

9. 发明授权

US06225668B1 Semiconductor device having a single crystal gate electrode and insulation 失效
标题翻译：具有单晶栅电极和绝缘的半导体器件
公开(公告)号：US06225668B1
公开(公告)日：2001-05-01
申请号：US08917268
申请日：1997-08-25
申请人： Masahiro Shindo , Daisuke Kosaka , Tetsuo Hikawa , Akira Takata , Yukihiro Ukai , Takashi Sawada , Toshifumi Asakawa
发明人： Masahiro Shindo , Daisuke Kosaka , Tetsuo Hikawa , Akira Takata , Yukihiro Ukai , Takashi Sawada , Toshifumi Asakawa
IPC分类号： H01L2336
CPC分类号： H01J37/32678 , B81B2203/0109 , B81B2203/0118 , B81B2203/0127 , B81C1/0038 , B81C2201/0109 , C23C16/48 , C23C16/486 , C23C16/511 , C23C16/56 , G01L9/0042 , G01P15/0802 , G02F2001/136281 , H01H59/0009 , H01L27/12 , H01L27/1203 , H01L31/03762 , H01L31/0693 , H01L31/0725 , H01L31/073 , H01L31/078 , H01L31/1804 , H01L31/1828 , H01L31/186 , H02N1/002 , Y02E10/543 , Y02E10/544 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.
摘要翻译：为了容易且精确地制造包括由单晶材料制成且具有复杂结构的构件的微加工机构，（100）面向上的单晶Si衬底（1102）的最上层（1104）从多个规定方向对Ne原子电流进行照射，使得最上层（1104）的晶体取向被转换为（111）面向上方向的取向。采用掩模构件（106）作为屏蔽构件，从其底面各向异性地蚀刻衬底（1102），从而形成V形槽（1112）。此时，最上层（1104）用作蚀刻停止器。因此，可以容易地制造具有均匀厚度的单晶隔膜的微加工机。具有复合构件的微机械，例如由单晶材料制成的图可以容易地通过无接合制造。

10. 发明授权

US5776253A Apparatus for forming single-crystalline thin film by beam irradiator and beam reflecting device 失效
标题翻译：用于通过光束照射器和光束反射装置形成单晶薄膜的装置
公开(公告)号：US5776253A
公开(公告)日：1998-07-07
申请号：US820599
申请日：1997-03-19
申请人： Toshifumi Asakawa , Masahiro Shindo , Toshikazu Yoshimizu , Sumiyoshi Ueyama
发明人： Toshifumi Asakawa , Masahiro Shindo , Toshikazu Yoshimizu , Sumiyoshi Ueyama
IPC分类号： C23C16/48 , C23C16/511 , C23C16/56 , C30B23/02 , C30B25/10 , H01L21/20 , H01L21/205 , C23C16/00
CPC分类号： H01L21/02546 , C23C16/48 , C23C16/486 , C23C16/511 , C23C16/56 , C30B23/02 , C30B25/105 , C30B29/06 , H01L21/02381 , H01L21/0242 , H01L21/0245 , H01L21/02532 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L21/02689 , Y10S117/905 , Y10T117/10 , Y10T117/1008
摘要： In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reaction gas inlet pipe (13) is sprayed onto an SiO.sub.2 substrate (11) by an action of the Ne atom current, so that an amorphous Si thin film is grown on the substrate (11) by a plasma CVD reaction. At the same time, a part of the Ne atom current having high directivity is directly incident upon the substrate (11), while another part thereof is incident upon the substrate (11) after its course is bent by a reflector (12). The reflector (12) is so set that all directions of the parts of the Ne atom current which are incident upon the substrate (11) are perpendicular to densest planes of single-crystalline Si. Therefore, the as-grown amorphous Si is sequentially converted to a single-crystalline Si thin film having crystal axes which are so regulated that the densest planes are oriented perpendicularly to the respective directions of incidence, by an action of the law of Bravais. Thus, a single-crystalline thin film is formed on a polycrystalline substrate. (FIG. 13)
摘要翻译：为了使用等离子体CVD在多晶衬底上形成单晶薄膜，由ECR离子发生器（2）形成向下的主要为中性的Ne原子电流。从反应气体导入管（13）供给的反应气体（例如硅烷气体）通过Ne原子电流的作用被喷射到SiO2基板（11）上，使得在基板上生长非晶Si薄膜 11）通过等离子体CVD反应。同时，具有高方向性的Ne原子电流的一部分直接入射到衬底（11）上，而另一部分在其反射器（12）弯曲之后入射到衬底（11）上。反射器（12）被设定为入射到基板（11）上的Ne原子电流部分的所有方向垂直于单晶Si的最密的平面。因此，通过布拉维斯定律的作用，将生长的非晶Si顺序地转变为具有如此规定的晶轴的单晶Si薄膜，使得最密的平面垂直于相应的入射方向取向。因此，在多晶基板上形成单晶薄膜。（图13）

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