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1. 发明申请

US20130040105A1 DEVICE AND METHOD FOR MECHANICALLY TEXTURING A SILICON WAFER INTENDED TO COMPRISE A PHOTOVOLTAIC CELL, AND RESULTING SILICON WAFER 有权
标题翻译：用于机械地刻印包含光伏电池和结晶硅膜的硅波的装置和方法
公开(公告)号：US20130040105A1
公开(公告)日：2013-02-14
申请号：US13643746
申请日：2011-04-27
申请人： Jean-Paul Garandet , Jacky Bancillon , Luc Federzoni , Marc Pirot
发明人： Jean-Paul Garandet , Jacky Bancillon , Luc Federzoni , Marc Pirot
IPC分类号： B26D3/06 , H01L31/0236
CPC分类号： H01L21/67092 , H01L31/02363 , Y02E10/50 , Y10S977/902 , Y10T83/0304 , Y10T428/24355
摘要： A solution for texturing silicon wafers configured to constitute photovoltaic (PV) cells. Silicon wafers can be produced, the surface of which include uniformly engraved patterns having a depth of between 5 and 50 μm.
摘要翻译：用于构造成构成光伏（PV）电池的硅晶片纹理化解决方案。可以生产硅晶片，其表面包括深度在5和50μm之间的均匀雕刻图案。

2. 发明申请

US20060275936A1 Method for production of a semiconductor device with auto-aligned metallisations 失效
标题翻译：用于生产具有自动对准金属化的半导体器件的方法
公开(公告)号：US20060275936A1
公开(公告)日：2006-12-07
申请号：US10555072
申请日：2004-04-27
申请人： Pierre-Jean Ribeyron , Marc Pirot
发明人： Pierre-Jean Ribeyron , Marc Pirot
IPC分类号： H01L21/00
CPC分类号： H01L31/022433 , Y02E10/50
摘要： This invention relates to a process for making a semiconductor device comprising the following steps: a doped region with a first type of conductivity is made on a first principal face of a semiconductor substrate and at least one window is made, a first metallisation area is deposited on the doped region, a dielectric layer is deposited on at least the window and the first metallisation area, at least a first opening is etched in the dielectric layer at the window to accommodate a doped region with a second type of conductivity while arranging an undoped portion of the semiconductor substrate laterally between the doped regions, the substrate is doped to create the doped region with the second type of conductivity, a second metallisation area is deposited. Application particularly for solar cells in thin layer.
摘要翻译：本发明涉及一种制造半导体器件的方法，包括以下步骤：在半导体衬底的第一主面上形成具有第一类型导电性的掺杂区域，并且至少形成一个窗口，沉积第一金属化区域在掺杂区域上，在至少窗口和第一金属化区域上沉积介电层，在窗口处的电介质层中至少蚀刻第一开口以容纳具有第二类型导电性的掺杂区域，同时布置未掺杂的部分半导体衬底横向于掺杂区域之间，衬底被掺杂以产生具有第二类型导电性的掺杂区域，沉积第二金属化区域。特别适用于薄层太阳能电池。

3. 发明授权

US08974216B2 Device and method for mechanically texturing a silicon wafer intended to comprise a photovoltaic cell, and resulting silicon wafer 有权
标题翻译：用于机械纹理化旨在包括光伏电池和所得硅晶片的硅晶片的装置和方法
公开(公告)号：US08974216B2
公开(公告)日：2015-03-10
申请号：US13643746
申请日：2011-04-27
申请人： Jean-Paul Garandet , Jacky Bancillon , Luc Federzoni , Marc Pirot
发明人： Jean-Paul Garandet , Jacky Bancillon , Luc Federzoni , Marc Pirot
IPC分类号： B26D3/06 , B29C59/02 , H01L21/67 , H01L31/0236
CPC分类号： H01L21/67092 , H01L31/02363 , Y02E10/50 , Y10S977/902 , Y10T83/0304 , Y10T428/24355
摘要： A solution for texturing silicon wafers configured to constitute photovoltaic (PV) cells. Silicon wafers can be produced, the surface of which include uniformly engraved patterns having a depth of between 5 and 50 μm.
摘要翻译：用于构造成构成光伏（PV）电池的硅晶片纹理化解决方案。可以生产硅晶片，其表面包括深度在5和50μm之间的均匀雕刻图案。

4. 发明授权

US07364938B2 Method for production of a semiconductor device with auto-aligned metallisations 失效
标题翻译：用于生产具有自动对准金属化的半导体器件的方法
公开(公告)号：US07364938B2
公开(公告)日：2008-04-29
申请号：US10555072
申请日：2004-04-27
申请人： Pierre-Jean Ribeyron , Marc Pirot
发明人： Pierre-Jean Ribeyron , Marc Pirot
IPC分类号： H01L21/00
CPC分类号： H01L31/022433 , Y02E10/50
摘要： This invention relates to a process for making a semiconductor device comprising the following steps: a doped region with a first type of conductivity is made on a first principal face of a semiconductor substrate and at least one window is made, a first metallisation area is deposited on the doped region, a dielectric layer is deposited on at least the window and the first metallisation area, at least a first opening is etched in the dielectric layer at the window to accommodate a doped region with a second type of conductivity while arranging an undoped portion of the semiconductor substrate laterally between the doped regions, the substrate is doped to create the doped region with the second type of conductivity, a second metallisation area is deposited. Application particularly for solar cells in thin layer.
摘要翻译：本发明涉及一种制造半导体器件的方法，包括以下步骤：在半导体衬底的第一主面上形成具有第一类型导电性的掺杂区域，并且至少形成一个窗口，沉积第一金属化区域在掺杂区域上，在至少窗口和第一金属化区域上沉积介电层，在窗口处的电介质层中至少蚀刻第一开口以容纳具有第二类型导电性的掺杂区域，同时布置未掺杂的部分半导体衬底横向于掺杂区域之间，衬底被掺杂以产生具有第二类型导电性的掺杂区域，沉积第二金属化区域。特别适用于薄层太阳能电池。

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