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1. 发明申请

US20130176783A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND WRITE-IN METHOD THEREOF 有权
标题翻译：非易失性半导体存储器件及其写入方法
公开(公告)号：US20130176783A1
公开(公告)日：2013-07-11
申请号：US13527251
申请日：2012-06-19
申请人： Makoto SENOO , Hideki ARAKAWA , Riichiro SHIROTA
发明人： Makoto SENOO , Hideki ARAKAWA , Riichiro SHIROTA
IPC分类号： G11C16/10
CPC分类号： G11C16/10 , G11C16/20
摘要： TASK: to minimize variations of the threshold voltage distribution after programming and obtain a high-speed rewriting characteristic. MEANS FOR SOLVING THE PROBLEM: A non-volatile semiconductor memory device includes a non-volatile memory cell array and a control circuit for controlling writing-in to the memory cell array, wherein before or after an erasing process where data of written-in memory cells is erased, the control circuit detects a programming speed when writing-in to the memory cell array, determines a programming start voltage corresponding to the programming speed for every block or every word line, stores the determined programming start voltage in the memory cell array and reads-out the programming start voltage from the memory cell array to write-in predetermined data.
摘要翻译：任务：最小化编程后阈值电压分布的变化，并获得高速重写特性。解决问题的手段：非易失性半导体存储器件包括非易失性存储单元阵列和用于控制对存储单元阵列的写入的控制电路，其中在写入存储器的数据的擦除处理之前或之后单元被擦除时，控制电路在写入存储单元阵列时检测编程速度，确定与每个块或每个字线对应的编程速度的编程开始电压，将所确定的编程开始电压存储在存储单元阵列中并从存储单元阵列读出编程开始电压以写入预定数据。

2. 发明申请

US20090009162A1 EDDY CURRENT FLAW DETECTION PROBE 有权
标题翻译： EDDY电流检测探头
公开(公告)号：US20090009162A1
公开(公告)日：2009-01-08
申请号：US12128316
申请日：2008-05-28
申请人： Akira NISHIMIZU , Hirofumi Ouchi , Yoshio Nonaka , Yosuke Takatori , Akihiro Taki , Makoto Senoo
发明人： Akira NISHIMIZU , Hirofumi Ouchi , Yoshio Nonaka , Yosuke Takatori , Akihiro Taki , Makoto Senoo
IPC分类号： G01N27/90
CPC分类号： G01N27/9033
摘要： Disclosed is an eddy current flaw detection probe that is capable of pressing itself against an inspection target whose curvature varies. A flaw sensor is configured by fastening a plurality of coils to a flexible substrate that faces the surface of the inspection target. A first elastic body is positioned opposite the inspection target for the flaw sensor, is obtained by stacking two or more elastic plates, and has an elastic coefficient that varies in a longitudinal direction. A second elastic body is a porous body positioned between the flexible substrate and the first elastic body. A pressure section is employed to press the first elastic body toward the inspection target.
摘要翻译：本发明公开了一种涡流探伤探针，其能够将其自身压向弯曲变化的检查目标。缺陷传感器通过将多个线圈紧固到面向检查对象表面的柔性基板来构造。第一弹性体与用于缺陷传感器的检查对象物相对设置，通过堆叠两个或更多个弹性板获得，并且具有在纵向方向上变化的弹性系数。第二弹性体是位于柔性基板和第一弹性体之间的多孔体。使用压力部将第一弹性体朝向检查对象物按压。

3. 发明授权

US06957583B2 Ultrasonic array sensor, ultrasonic inspection instrument and ultrasonic inspection method 失效
标题翻译：超声波阵列传感器，超声波检测仪器和超声波检测方法
公开(公告)号：US06957583B2
公开(公告)日：2005-10-25
申请号：US10696564
申请日：2003-10-30
申请人： Masahiro Tooma , Naoyuki Kono , Masahiro Koike , Hirokazu Adachi , Takao Shimura , Makoto Senoo , Tetsuya Matsui
发明人： Masahiro Tooma , Naoyuki Kono , Masahiro Koike , Hirokazu Adachi , Takao Shimura , Makoto Senoo , Tetsuya Matsui
IPC分类号： G01N29/24 , B06B1/06 , G01N29/26 , G01N29/04 , A61B8/02
CPC分类号： B06B1/06 , G01N2291/0289 , G01N2291/044
摘要： An ultrasonic inspection instrument for detecting a crack and performing sizing in the depth direction of the crack. By a transmitter element array and a receiver element array included in a common sensor, focus points between focused acoustic fields are electronically scanned in a range including a location where half the sum of the transmitting angle of ultrasonic waves to an inspection-target material and the receiving angle of diffraction echoes from the inspection-target material is 30 degrees, so that a tip portion of the crack is detected from the received diffraction echoes. Thus, the detectability of the ultrasonic inspection instrument for detecting diffraction waves in a subject to be inspected and performing crack inspection is stabilized and kept high.
摘要翻译：一种超声波检测仪，用于检测裂纹深度方向上的尺寸。通过包含在公共传感器中的发射器元件阵列和接收器元件阵列，在聚焦声场之间的聚焦点在包括超声波的发射角的一半与检查对象材料的位置和来自检查对象材料的衍射回波的接收角为30度，从而从接收的衍射回波检测裂纹的尖端部分。因此，用于检测被检查物体和进行裂纹检查的被检体中的衍射波的超声波检查装置的检测稳定化，保持高。

4. 发明授权

US07593266B2 Semiconductor memory device and method of verifying the same 失效
标题翻译：半导体存储器件及其验证方法
公开(公告)号：US07593266B2
公开(公告)日：2009-09-22
申请号：US11819173
申请日：2007-06-26
申请人： Makoto Senoo , Kazunari Kido , Shunichi Toyama , Yoshihiro Tsukidate
发明人： Makoto Senoo , Kazunari Kido , Shunichi Toyama , Yoshihiro Tsukidate
IPC分类号： G11C11/34
CPC分类号： G11C16/3454 , G11C2216/20
摘要： Example embodiments provide a semiconductor memory device and a method of verifying the same. The semiconductor memory device may include: a memory including a plurality of memory cells; a verifier determining a program state of the memory cell in the memory; and/or an address/program controller controlling the memory and the verifier. Example embodiments include making the memory start a suspend operation during an operation of the memory cell, and/or starting a verify operation when the suspend operation terminates. The address/program controller may start the operation on the memory cell if it is determined that a repeat operation is necessary, and may start the program operation on the next memory cell if it is determined that a repeat operation is unnecessary. The memory operation mode may be one in which a verify operation is not performed before programming.
摘要翻译：示例性实施例提供半导体存储器件及其验证方法。半导体存储器件可以包括：包括多个存储器单元的存储器; 确定存储器中的存储器单元的程序状态的验证器; 和/或控制存储器和验证器的地址/程序控制器。示例实施例包括在存储器单元的操作期间使存储器开始暂停操作，和/或当挂起操作终止时开始验证操作。如果确定需要重复操作，则地址/程序控制器可以在存储器单元上开始操作，并且如果确定不需要重复操作，则可以在下一个存储器单元上开始编程操作。存储器操作模式可以是在编程之前不执行验证操作的模式。

5. 发明授权

US08228058B2 Eddy current flaw detection probe 有权
标题翻译：涡流探伤探头
公开(公告)号：US08228058B2
公开(公告)日：2012-07-24
申请号：US12128316
申请日：2008-05-28
申请人： Akira Nishimizu , Hirofumi Ouchi , Yoshio Nonaka , Yosuke Takatori , Akihiro Taki , Makoto Senoo
发明人： Akira Nishimizu , Hirofumi Ouchi , Yoshio Nonaka , Yosuke Takatori , Akihiro Taki , Makoto Senoo
IPC分类号： G01R33/02 , G01N27/82
CPC分类号： G01N27/9033
摘要： Disclosed is an eddy current flaw detection probe that is capable of pressing itself against an inspection target whose curvature varies. A flaw sensor is configured by fastening a plurality of coils to a flexible substrate that faces the surface of the inspection target. A first elastic body is positioned opposite the inspection target for the flaw sensor, is obtained by stacking two or more elastic plates, and has an elastic coefficient that varies in a longitudinal direction. A second elastic body is a porous body positioned between the flexible substrate and the first elastic body. A pressure section is employed to press the first elastic body toward the inspection target.
摘要翻译：本发明公开了一种涡流探伤探针，其能够将其自身压向弯曲变化的检查目标。缺陷传感器通过将多个线圈紧固到面向检查对象表面的柔性基板来构造。第一弹性体与用于缺陷传感器的检查对象物相对设置，通过堆叠两个或更多个弹性板获得，并且具有在纵向方向上变化的弹性系数。第二弹性体是位于柔性基板和第一弹性体之间的多孔体。使用压力部将第一弹性体朝向检查对象物按压。

6. 发明授权

US09064580B2 Nonvolatile semiconductor memory device and write-in method thereof 有权
标题翻译：非易失性半导体存储器件及其写入方法
公开(公告)号：US09064580B2
公开(公告)日：2015-06-23
申请号：US13527251
申请日：2012-06-19
申请人： Makoto Senoo , Hideki Arakawa , Riichiro Shirota
发明人： Makoto Senoo , Hideki Arakawa , Riichiro Shirota
IPC分类号： G11C16/06 , G11C16/10 , G11C16/20
CPC分类号： G11C16/10 , G11C16/20
摘要： A non-volatile semiconductor memory device includes a non-volatile memory cell array and a control circuit for controlling writing-in to the memory cell array. In the stage before an erasing pulse adding in an erasing process where data of written-in memory cells is erased, the control circuit detects a programming speed when writing-in to the memory cell array, determines a programming start voltage corresponding to the programming speed for every block or every word line, stores the determined programming start voltage in the memory cell array and reads-out the programming start voltage from the memory cell array to write-in predetermined data.
摘要翻译：非挥发性半导体存储器件包括非易失性存储单元阵列和用于控制对存储单元阵列的写入的控制电路。在写入写入存储单元的数据被擦除的擦除处理中的擦除脉冲之前的阶段中，控制电路在写入存储单元阵列时检测编程速度，确定对应于编程速度的编程开始电压对于每个块或每个字线，将所确定的编程开始电压存储在存储单元阵列中，并从存储单元阵列读出编程开始电压以写入预定数据。

7. 发明申请

US20080123428A1 Semiconductor memory device and method of verifying the same 失效
标题翻译：半导体存储器件及其验证方法
公开(公告)号：US20080123428A1
公开(公告)日：2008-05-29
申请号：US11819173
申请日：2007-06-26
申请人： Makoto Senoo , Kazunari Kido , Shunichi Toyama , Yoshihiro Tsukidate
发明人： Makoto Senoo , Kazunari Kido , Shunichi Toyama , Yoshihiro Tsukidate
IPC分类号： G11C7/22
CPC分类号： G11C16/3454 , G11C2216/20
摘要： Example embodiments provide a semiconductor memory device and a method of verifying the same. The semiconductor memory device may include: a memory including a plurality of memory cells; a verifier determining a program state of the memory cell in the memory; and/or an address/program controller controlling the memory and the verifier. Example embodiments include making the memory start a suspend operation during an operation of the memory cell, and/or starting a verify operation when the suspend operation terminates. The address/program controller may start the operation on the memory cell if it is determined that a repeat operation is necessary, and may start the program operation on the next memory cell if it is determined that a repeat operation is unnecessary. The memory operation mode may be one in which a verify operation is not performed before programming.
摘要翻译：示例性实施例提供半导体存储器件及其验证方法。半导体存储器件可以包括：包括多个存储器单元的存储器; 确定存储器中的存储器单元的程序状态的验证器; 和/或控制存储器和验证器的地址/程序控制器。示例实施例包括在存储器单元的操作期间使存储器开始暂停操作，和/或当挂起操作终止时开始验证操作。如果确定需要重复操作，则地址/程序控制器可以在存储器单元上开始操作，并且如果确定不需要重复操作，则可以在下一个存储器单元上开始编程操作。存储器操作模式可以是在编程之前不执行验证操作的模式。

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